IPU60R1K5CE [ISC]
isc N-Channel MOSFET Transistor;
| 型号： | IPU60R1K5CE |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc N-Channel MOSFET Transistor |
| 文件： | 总2页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
isc N-Channel MOSFET Transistor
IPU60R1K5CE
·FEATURES
·With TO-251(IPAK) packaging
·High speed switching
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·DC-DC converters
·Motor control
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGSS
ID
PARAMETER
VALUE
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation
3.2
A
IDM
8.0
A
PD
49
W
℃
℃
Tj
Operating Junction Temperature
Storage Temperature
-40~150
-40~150
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
℃/W
℃/W
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
2.57
62
1
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
IPU60R1K5CE
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
BVDSS
VGS(th)
RDS(on)
IGSS
PARAMETER
CONDITIONS
MIN
600
2.5
TYP
1.26
0.9
MAX
UNIT
V
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
Gate Threshold Voltage
VDS=VGS; ID=0.09mA
VGS= 10V; ID=1.1A
VGS= ±20V;VDS= 0V
3.5
1.5
V
Drain-Source On-Resistance
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
Ω
±0.1
μA
μA
V
VDS= 600V; VGS= 0V;Tj=25℃
VDS= 600V; VGS= 0V;Tj=150℃
1
100
IDSS
VSDF
ISD=1.4A, VGS =0V
2
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
相关型号：
©2020 ICPDF网 联系我们和版权申明