IRF640 [ISC]
isc N-Channel MOSFET Transistor; ISC N沟道MOSFET晶体管
| 型号： | IRF640 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc N-Channel MOSFET Transistor |
| 文件： | 总2页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
IRF640
DESCRIPTION
·Drain Current –ID= 18A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.18Ω(Max)
·Fast Switching Speed
·Low Drive Requirement
APPLICATIONS
·Designed for low voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGS
ID
VALUE
200
UNIT
V
ARAMETER
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
±20
18
V
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
A
Ptot
125
W
Tj
150
℃
℃
Tstg
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
1.0
UNIT
℃/W
℃/W
Rth j-c
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Rth j-a
62.5
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
IRF640
SYMBOL
V(BR)DSS
VGS(
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
CONDITIONS
MIN
200
2
MAX
UNIT
V
VGS= 0; ID= 0.25mA
VDS= VGS; ID= 0.25mA
4
V
)
th
Drain-Source On-stage Resistance VGS=10V; ID= 10A
0.18
±100
200
Ω
RDS(
)
on
IGSS
Gate Source Leakage Current
Zero Gate Voltage Drain Current
Diode Forward Voltage
VGS= ±20V;VDS= 0
nA
uA
V
IDSS
VDS= 200V; VGS= 0
IF= 18A; VGS=0
VSD
2.0
isc Website：www.iscsemi.cn
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