IRFB4229 [ISC]

N-Channel MOSFET Transistor;
IRFB4229
型号: IRFB4229
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

N-Channel MOSFET Transistor

文件: 总2页 (文件大小:338K)
中文:  中文翻译
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INCHANGE Semiconductor  
isc N-Channel MOSFET Transistor  
IRFB4110IIRFB4110  
·FEATURES  
·Static drain-source on-resistance:  
RDS(on) ≤4.5m  
·Enhancement mode  
·Fast Switching Speed  
·100% avalanche tested  
·Minimum Lot-to-Lot variations for robust device  
performance and reliable operation  
·DESCRITION  
·reliable device for use in a wide variety of applications  
·ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VDSS  
VGS  
ID  
PARAMETER  
VALUE  
100  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
180  
V
Drain Current-Continuous  
Drain Current-Single Pulsed  
Total Dissipation @TC=25℃  
Max. Operating Junction Temperature  
Storage Temperature  
A
IDM  
670  
A
PD  
370  
W
175  
Tj  
-55~175  
Tstg  
·THERMAL CHARACTERISTICS  
SYMBOL  
Rth(ch-c)  
Rth(ch-a)  
PARAMETER  
MAX  
UNIT  
Channel-to-case thermal resistance  
/W  
/W  
0.402  
62  
Channel-to-ambient thermal resistance  
1
isc websitewww.iscsemi.cn  
isc & iscsemi is registered trademark  
INCHANGE Semiconductor  
isc N-Channel MOSFET Transistor  
IRFB4110IIRFB4110  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
BVDSS  
VGS(th)  
RDS(on)  
IGSS  
PARAMETER  
CONDITIONS  
MIN  
100  
2.0  
TYP  
MAX  
UNIT  
V
Drain-Source Breakdown Voltage VGS=0V; ID =250μA  
Gate Threshold Voltage  
VDS=VGS; ID =250μA  
VGS=10V; ID=75A  
VGS=±20V  
4.0  
4.5  
±0.1  
20  
V
Drain-Source On-Resistance  
Gate-Source Leakage Current  
Drain-Source Leakage Current  
Diode forward voltage  
mΩ  
μA  
μA  
V
IDSS  
VDS=100V; VGS= 0V  
IS=75A, VGS = 0V  
VSD  
1.3  
2
isc websitewww.iscsemi.cn  
isc & iscsemi is registered trademark  

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