概述
数据手册MJ11017 概述
isc Silicon PNP Darlington Power Transistor ISC的硅PNP达林顿功率晶体管
MJ11017 数据手册
通过下载MJ11017数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
MJ11017
DESCRIPTION
·High DC Current Gain-
: hFE = 400(Min)@ IC= -10A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -150V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -10A
= -3.4V(Max)@ IC= -15A
·Complement to Type MJ11018
APPLICATIONS
·Designed for general purpose amplifiers ,low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
-150
-150
-5
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
-15
A
ICM
-30
A
IB
-0.5
A
Collector Power Dissipation
@TC=25℃
PC
175
W
℃
℃
Junction Temperature
175
Tj
Storage Temperature Range
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
0.86
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
MJ11017
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(sat)-1
VCE(sat)-2
VBE(sat)
VBE(on)
ICEV
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC= -100mA, IB= 0
-150
IC= -10A ,IB= -0.1A
IC= -15A ,IB= -0.15A
IC= -15A ,IB= -0.15A
-2.0
-3.4
-3.8
-2.8
V
V
V
IC= -10A ; VCE= -5V
V
VCEV=150V;VBE(off)=1.5V
-0.5
-5.0
mA
mA
mA
VCEV=150V;VBE =1.5V;TC=150℃
(off)
ICEO
Collector Cutoff Current
VCE= -75V, IB=0
-1
-2
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -10A ; VCE= -5V
IC= -15A ; VCE= -5V
IE= 0 ; VCB= -10V,f= 0.1MHz
400
100
15000
hFE-2
DC Current Gain
Output Capacitance
600
pF
COB
Switching times
Delay Time
75
0.5
2.7
2.5
ns
td
tr
Rise Time
Storage Time
Fall Time
μs
μs
μs
IC= -10A , VCC= -100V;
IB1= -0.1A; VBE(off)= -5V;
Duty Cycle≤1.0%
ts
tf
isc Website：www.iscsemi.cn
MJ11017 相关器件
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