概述
数据手册MJE3055T 概述
isc Silicon NPN Power Transistor ISC的硅NPN功率晶体管
MJE3055T 数据手册
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PDF下载INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJE3055T
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min)
·High DC Current Gain-
: hFE= 20-100@IC= 4A
·Complement to Type MJE2955T
APPLICATIONS
·Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
70
60
V
5
10
V
Collector Current-Continuous
Base Current-Continuous
A
IB
6
A
Collector Power Dissipation
@ TC=25℃
PC
75
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.67
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJE3055T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= 200mA; IB=0
-60
V
IC= 4A; IB= 0.4A
IC= 10A; IB= 3.3A
IC= 4A ; VCE= 4V
1.1
8.0
1.8
V
VCE
VCE
(sat)-1
(sat)-2
V
V
VBE
(on)
VCE=70V;VEB( )=-1.5V
1.0
5.0
off
ICEX
mA
mA
mA
mA
V
CE=70V;VEB( )=-1.5V;TC= 150℃
off
ICEO
ICBO
IEBO
hFE-1
hFE-2
fT
Collector Cutoff Current
VCE= 30V; IB= 0
0.7
V
CB= 70V; IE= 0
VCB= 70V; IE= 0; TC= 150℃
1.0
10
Collector Cutoff Current
Emitter Cutoff Current
VEB= 5V; IC= 0
5.0
DC Current Gain
IC= 4A ; VCE= 4V
20
5
100
DC Current Gain
IC= 10A ; VCE= 4V
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V; f= 500kHz
2.0
MHz
2
isc Website：www.iscsemi.cn
MJE3055T 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| MJE3055T-TA3-T | UTC | HIGH VOLTAGE TRANSISTOR | 获取价格 |
|
| MJE3055T-TM3-T | UTC | HIGH VOLTAGE TRANSISTOR | 获取价格 |
|
| MJE3055T-TN3-R | UTC | HIGH VOLTAGE TRANSISTOR | 获取价格 |
|
| MJE3055T-TN3-T | UTC | HIGH VOLTAGE TRANSISTOR | 获取价格 |
|
| MJE3055T16 | MOTOROLA | 10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB | 获取价格 |
|
| MJE3055T16A | MOTOROLA | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | 获取价格 |
|
| MJE3055TAF | MOTOROLA | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin | 获取价格 |
|
| MJE3055TAJ | ONSEMI | TRANSISTOR 10 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power | 获取价格 |
|
| MJE3055TAN | ONSEMI | 10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN | 获取价格 |
|
| MJE3055TAS | ONSEMI | TRANSISTOR 10 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power | 获取价格 |
|
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