MJE3055T-TN3-T [UTC]

HIGH VOLTAGE TRANSISTOR; 高压晶体管


型号：	MJE3055T-TN3-T
厂家：	Unisonic Technologies
描述：	HIGH VOLTAGE TRANSISTOR 高压晶体管晶体晶体管高压
文件：	总2页 (文件大小：43K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

MJE3055T

NPN SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

ꢀ

DESCRIPTION

TO- 251

The UTC MJE3055T is designed for general purpose of amplifier

and switching applications.

TO-252

TO-220

*Pb-free plating product number:MJE3055TL

ꢀ ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

MJE3055T-TA3-T

MJE3055T-TM3-T

MJE3055T-TN3-R

MJE3055T-TN3-T

MJE3055TL-TA3-T

MJE3055TL-TM3-T

MJE3055TL-TN3-R

MJE3055TL-TN3-T

TO-220

TO-251

TO-252

Tube

Tape Reel

Tube

MJE3055TL-TA3-T

(1)Packing Type

(2)Package Type

(3)Lead Plating

(1) R: Tape Reel, T: Tube

(2) TA3: TO-220, TM3: TO-251, TN3: TO-252

(3) L: Lead Free Plating, Blank: Pb/Sn

www.unisonic.com.tw

1 of 2

QW-R203-011,B

MJE3055T

NPN SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATINGS (T

(Operating temperature range applies unless otherwise specified)

PARAMETER SYMBOL

c=25℃)

RATINGS

UNIT

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

Collector-Emitter Voltage

Emitter-Base Voltage

TO-220

Total Power Dissipation

P_D

TO-251/TO-252

Collector Current

Base Current

I_C

I_B

Junction Temperature

Storage Temperature

T_J

150

℃

T_STG

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

BV_CEOI_C=200mA

BV_CBOI_C=10mA

BV_EBOI_E=10mA

I_CBO

I_CEO

I_CEX

I_EBO

V_CB=70V

700

µA

Collector Cut-off Current

V_CE=30V

V_CE=70V, V_EB(OFF)=1.5V

Emitter Cut-off Current

V_EB=5V

V_CE(SAT)1I_C=4A, I_B=0.4A

V_CE(SAT)2I_C=10A, I_B=3.3A

V_BE(ON)V_CE=4V, I_C=4A

1.1

Collector-Emitter Saturation Voltage

Base-Emitter on Voltage

DC Current Gain

1.8

h_FE1

h_FE2

f_T

I_C=4A, V_CE=4V

I_C=4A, V_CE=10V

100

Current Gain Bandwidth Product

V_CE=10V, I_C=0.5A, f=1MHz

MHZ

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

2 of 2

QW-R203-011,B

www.unisonic.com.tw

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