MJH13091 [ISC]

isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管


型号：	MJH13091
厂家：	INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：	isc Silicon NPN Power Transistors ISC的硅NPN功率晶体管晶体晶体管
文件：	总2页 (文件大小：117K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

MJH13090/13091

DESCRIPTION

· Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 400V(Min)—MJH13090

= 450V(Min)—MJH13091

·High Switching Speed

APPLICATIONS

·Designed for high-voltage ,high-speed, power switching in

inductive circuits where fall time is critical. They are partic-

ularly suited for line operated switch-mode applications.

Typical applications:

·Switching regulators

·Inverters

·Solenoid and relay drivers

·Motor controls

·Deflection circuits

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

650

750

400

450

UNIT

MJH13090

MJH13091

MJH13090

MJH13091

Collector-Emitter

V_CEV

Voltage

Collector-Emitter

Voltage

V_CEO(SUS)

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_BM

P_C

T_J

Collector Power Dissipation

125

150

-65~150

℃

@T_C=25℃

Junction Temperature

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

MJH13090/13091

ELECTRICAL CHARACTERISTICS

T_C=25℃ unless otherwise specified

SYMBOL

V_CEO(SUS)

V_CE

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

MJH13090

MJH13091

400

Collector-Emitter

Sustaining Voltage

I_C=100mA ; I_B=0

450

I_C= 10A; I_B= 2A

I_C= 10A; I_B= 2A;T_C=100℃

1.0

Collector-Emitter Saturation Voltage

(sat)-

2.0

Collector-Emitter Saturation Voltage I_C= 15A; I_B= 3A

3.0

V_CE

V_BE

(sat)-

I_C= 10A; I_B= 2A

1.5

Base-Emitter Saturation Voltage

(sat)

I_C= 10A; I_B= 2A;T_C=100℃

_CEV=650V;V_BE_(off)=1.5V

V_CEV=650V;V_BE=1.5V;T_C=100℃

0.5

2.5

MJH13090

MJH13091

MJH13090

MJH13091

(off)

Collector

Cutoff Current

I_CEV

V_CEV=750V;V_BE_(off)=1.5V

0.5

2.5

_CEV=750V;V_BE=1.5V;T_C=100℃

(off)

V_CE= 650V; R_BE= 50Ω,T_C= 100℃

3.0

1.0

Collector

Cutoff Current

I_CER

V_CE= 750V; R_BE= 50Ω,T_C= 100℃

V_EB= 6V; I_C=0

I_EBO

h_FE

Emitter Cutoff Current

DC Current Gain

I_C= 10A ; V_CE= 3V

C_OB

Output Capacitance

350

I_E= 0; V_CB= 10V; f_test=1.0kHz

Switching times;Resistive Load

Delay Time

Rise Time

Storage Time

Fall Time

500

2500

500

t_d

t_r

130

550

100

I_C= 10A , V_CC= 250V;

I_B1= 1.25A;t_p= 30μs; V_BE_(off)= 5V

Duty Cycle≤2.0%

t_s

t_f

isc Website：www.iscsemi.cn

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