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PMD10K60 [ISC]

isc Silicon NPN Darlingtion Power Transistor; ISC的硅NPN Darlingtion功率晶体管
PMD10K60
型号： PMD10K60
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon NPN Darlingtion Power Transistor
ISC的硅NPN Darlingtion功率晶体管

晶体 晶体管 局域网
文件： 总2页 (文件大小：65K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlingtion Power Transistor  
PMD10K60  
DESCRIPTION  
·High DC current gain  
·Collector-Emitter Sustaining Voltage-  
V
CEO(SUS)= 60V(Min)  
·Complement to type PMD11K60  
APPLICATIONS  
·Designed for general purpose amplifier and low frequency  
switching applications  
ABSOLUTE MAXIMUM RATINGS(TC=25℃)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
60  
UNIT  
V
60  
V
5.0  
V
Collector Current -Continuous  
Collector Current-Peak  
Base Current  
12  
A
ICP  
20  
A
IB  
0.2  
A
PC  
Collector Power Dissipation@TC=25℃  
Junction Temperature  
150  
150  
-65~200  
W
℃
℃
Tj  
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
ThermalResistance, Junction to Case  
1.17  
℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlingtion Power Transistor  
PMD10K60  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Collector Cutoff current  
CONDITIONS  
MIN  
MAX  
UNIT  
V
VCEO(SUS)  
IC= 100mA ; IB= 0  
60  
IC= 6A; IB= 24mA  
IC= 6A; IB= 24mA  
IC= 6A; VCE= 3V  
2.0  
2.8  
2.8  
V
VCE  
(sat)  
(sat)  
V
VBE  
V
VBE  
(on)  
VCE= 60V; RBE= 1KΩ  
VCE= 60V; RBE= 1KΩ, TC=150℃  
1.0  
5.0  
ICER  
mA  
mA  
IEBO  
hFE  
fT  
Emitter Cut-off current  
VEB= 5V; IC= 0  
2.0  
DC Current Gain  
IC= 6A; VCE= 3V  
1000  
4
20000  
Current-Gain—Bandwidth Product  
Output Capacitance  
IC= 5A; VCE= 3V, f= 1kHz  
IE= 0; VCB= 10V; ftest= 1.0MHz  
MHz  
pF  
COB  
300  
2
isc Website：www.iscsemi.cn  

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