4N32-1SM [ISOCOM]

Darlington Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT, PLASTIC PACKAGE-6;
4N32-1SM
型号: 4N32-1SM
厂家: ISOCOM COMPONENTS    ISOCOM COMPONENTS
描述:

Darlington Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT, PLASTIC PACKAGE-6

输出元件 光电
文件: 总3页 (文件大小:38K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
4N32X3,-2,-1  
4N32-3,-2,-1  
LOW INPUT CURRENT  
PHOTODARLINGTON OPTICALLY  
COUPLED ISOLATORS  
Dimensions in mm  
2.54  
APPROVALS  
l
UL recognised, File No. E91231  
6.4  
6.2  
1
2
6
5
'X' SPECIFICATION APPROVALS  
l
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VDE 0884 in 2 available lead form : -  
- STD  
3
4
1.54  
- G form  
VDE 0884 in SMD approval pending  
EN60950 approved by SETI,  
reg. no. 157786-18  
8.8  
8.4  
7.8  
7.4  
4.3  
4.1  
0.5  
DESCRIPTION  
The 4N32-3,-2,-1 series of optically coupled  
isolators consist of an infrared light emitting  
diode and NPN silicon photodarlington in a  
space efficient dual in line plastic package.  
0.3  
9.6  
8.4  
0.5  
3.3  
ABSOLUTE MAXIMUM RATINGS  
(25°C unless otherwise specified)  
FEATURES  
l
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
Low input current 0.25mA I  
Storage Temperature  
Operating Temperature  
Lead Soldering Temperature  
-55°C to + 150°C  
-55°C to + 100°C  
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(1/16 inch (1.6mm) from case for 10 secs) 260°C  
High CurrentTransfer Ratio F(200% min)  
High Isolation Voltage (5.3kVRMS ,7.5kVPK  
High BVCEO (55V min)  
)
INPUT DIODE  
All electrical parameters 100% tested  
Custom electrical selections available  
Forward Current  
Reverse Voltage  
Power Dissipation  
80mA  
10V  
105mW  
APPLICATIONS  
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Computer terminals  
Industrial systems controllers  
Measuring instruments  
Signal transmission between systems of  
different potentials and impedances  
OUTPUT TRANSISTOR  
Collector-emitter Voltage BVCEO  
Emitter-collector Voltage BVECO  
Power Dissipation  
55V  
6V  
150mW  
OPTIONSM  
SURFACEMOUNT  
OPTION G  
POWER DISSIPATION  
5.08  
max.  
Total Power Dissipation  
250mW  
(derate linearly 3.3mW/°C above 25°C)  
1.2  
0.6  
0.26  
10.16  
1.4  
0.9  
10.2  
9.5  
ISOCOM INC  
ISOCOM COMPONENTS LTD  
720 E., Park Boulevard, Suite 104,  
Plano, TX 75074 USA  
Tel: (972) 423-5521  
Unit 25B, Park View Road West,  
Park View Industrial Estate, Brenda Road  
Hartlepool, Cleveland, TS25 1YD  
Fax: (972) 422-4549  
Tel: (01429) 863609 Fax :(01429) 863581  
30/7/97  
DB91023-AAS/A3  
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
Reverse Voltage (VR)  
Reverse Current (IR)  
1.2  
1.4  
10  
V
V
µA  
IF = 20mA  
IR = 10µA  
VR = 10V  
10  
Output  
Collector-emitter Breakdown (BVCEO  
)
55  
55  
V
V
I = 1mA (note 2)  
Collector-base Breakdown (BVCBO  
Emitter-collector Breakdown (BVECO  
Collector-emitter Dark Current (ICEO  
)
ICC = 100µA  
)
6
V
IE = 100µA  
VCE = 10V  
)
100 nA  
Coupled Current Transfer Ratio (CTR) (Note 2)  
4N32-3  
200  
400  
800  
%
%
%
0.25mA IF , 1.0V VCE  
0.5mA IF , 1.0V VCE  
1.0mA IF , 1.0V VCE  
.
4N32-2  
400  
800  
%
%
0.5mA IF , 1.0V VCE  
1.0mA IF , 1.0V VCE  
.
4N32-1  
800  
%
1.0mA IF , 1.0V VCE  
.
Collector-emitter Saturation Voltage -3  
1.0  
1.0  
1.0  
V
V
V
VRMS  
VPK  
0.25mA IF , 0.5mA IC  
0.5mA IF , 2mA IC  
1.0mA IF , 8mA IC  
(note 1)  
(note 1)  
VIO = 500V (note 1)  
VCE = 2V ,  
-2  
-1  
Input to Output Isolation Voltage VISO  
5300  
7500  
Input-output Isolation Resistance RISO 5x1010  
Output Rise Time tr  
Output Fall Time tf  
60  
53  
300 µs  
250 µs  
IC = 10mA, RL= 100Ω  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
DB91023-AAS/A3  
30/7/97  
Collector Power Dissipation vs. Ambient Temperature  
Collector Current vs.  
Collector-emitter Voltage  
200  
10  
IF = 1.0mA  
150  
8
6
4
TA = 25°C  
IF = 0.5mA  
100  
50  
0
2
0
IF = 0.25mA  
-30  
0
25  
50  
75  
100 125  
0
1
2
3
4
5
Ambient temperature TA ( °C )  
Collector-emitter voltage VCE ( V )  
Forward Current vs. Ambient Temperature  
Relative Current Transfer Ratio  
vs. Ambient Temperature  
100  
80  
1.5  
IF = 1mA  
VCE = 1V  
60  
40  
1.0  
0.5  
0
20  
0
-30  
0
25  
50  
75  
100 125  
-30  
0
25  
50  
75  
100  
Ambient temperature TA ( °C )  
Ambient temperature TA ( °C )  
Current Transfer Ratio vs. Forward Current  
1200  
Collector-emitter Saturation  
Voltage vs. Ambient Temperature  
1.2  
1.0  
1000  
IF = 1mA  
IC = 8mA  
800  
600  
400  
0.8  
0.6  
0.4  
V
= 1V  
TACE= 25 °C  
0.2  
0
200  
0
-30  
0
25  
50  
75  
100  
0.1  
0.2  
0.5  
1
2
5
Forward current IF (mA)  
Ambient temperature TA ( °C )  
DB91023-AAS/A3  
30/7/97  

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