CNY30SM [ISOCOM]

SCR Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, SURFACE MOUNT PACKAGE-6;


型号：	CNY30SM
厂家：	ISOCOM COMPONENTS
描述：	SCR Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, SURFACE MOUNT PACKAGE-6 输出元件光电
文件：	总4页 (文件大小：69K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CNY30X, CNY34X

CNY30, CNY34

PHOTON COUPLED ISOLATOR Ga As

LIGHT ACTIVATED SCR

Dimensions in mm

APPROVALS

2.54

UL recognised, File No. E91231

7.0

6.0

'X' SPECIFICATION APPROVALS

VDE 0884 in 2 available lead forms : -

- STD

- G form

7.62

max.

8.3 max.

5.1

DESCRIPTION

max.

0.5

min.

The CNY30, CNY34 are optically coupled

isolators consisting of infrared light emitting

diode and a light activated silicon controlled

rectifier in a standard 6pin dual in line plastic

package.

3.9

3.1

15°

Max

0.25

0.48

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

FEATURES

Storage Temperature

Operating Temperature

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

-55°C to + 150°C

-55°C to + 100°C

Options :-

10mm lead spread - add G after part no.

Surface mount - add SM after part no.

Tape&reel - add SMT&R after part no.

High Isolation Voltage (5.3kV_RMS,7.5kV_PK

High Surge Anode Current (5.0 A)

)

INPUT DIODE

High Blocking Voltage (200V*¹, 400V*¹)

Low Turn on Current (5mA typical)

All electrical parameters 100% tested

Custom electrical selections available

Forward Current

60mA

Forward Current (Peak)

(1µs pulse, 300pps)

Reverse Voltage

Power Dissipation

100mW

APPLICATIONS

DETECTOR

10A, T²L compatible, Solid State Relay

25W Logic Indicator Lamp Driver

400V Symmetrical transistor coupler

Peak Forward Voltage

CNY30

200V*¹

400V*¹

CNY34

Peak Reverse Gate Voltage

RMS On-state Current

Peak On-state Current

(100µs, 1% duty cycle)

Surge Current (10ms)

Power Dissipation

300mA

OPTION G

8.3 max

OPTION SM

SURFACEMOUNT

10A

300mW

1.2

0.6

1.4

0.9

0.26

*1 IMPORTANT : A resistor must be connected

between gate and cathode (pins 4 & 6) to prevent false

firing (R_GK< 56kΩ)

10.2

9.5

10.16

ISOCOM INC

1024 S.GreenvilleAve,Suite240,

Allen, TX75002 USA

Tel:(214)495-0755 Fax:(214)495-0901

e-mail info@isocom.com

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: (01429) 863609 Fax :(01429) 863581

http://www.isocom.com

13/11/97

DB91039-AAS/A3

ELECTRICAL CHARACTERISTICS ( T_A= 25°C Unless otherwise noted )

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V_F)

Reverse Voltage (V_R)

1.2

1.5

I_F= 10mA

I_R= 10µA

Output

(note 2)

Peak Off-state Voltage (V_DM

CNY30

)

200

400

R =10kΩ, I_D= 50µA,

T_A^G=^K100°C

CNY34

R =10kΩ,I_D=150µA,

T_A^G=^K100°C

Peak Reverse Voltage (V_RM

CNY30

)

200

400

R =10kΩ, I_D= 50µA,

T_A^G=^K100°C

CNY34

R =10kΩ,I_D=150µA,

T_A^G=^K100°C

On-state Voltage (V_TM

)

1.1

1.3

I_TM= 300mA

Off-state Current (I_DM

CNY30

)

µA

R_GK=10kΩ, I_F= 0,

V_DM=200V, T_A=100°C

CNY34

150 µA

R_GK=10kΩ, I_F= 0,

V_DM=400V, T_A=100°C

Reverse Current (I_R)

CNY30

µA

R_GK=10kΩ, I_F= 0,

V_DM=200V, T_A=100°C

CNY34

150 µA

R_GK=10kΩ, I_F= 0,

V_DM=400V, T_A=100°C

Coupled Input Current to Trigger ( I_FT) (note 2)

V_AK=50V, R_GK=10kΩ

V_AK=100V, R_GK=27kΩ

Coupled dv/dt, Input to Output (dv/dt) 500

Input to Output Isolation Voltage V_ISO5300

7500

V/µs

See note 1

V^RMS

Ω^PK

Input-output Isolation Resistance R

10¹¹

V = 500V (note 1)

Input-output Capacitance

C^If^SO

V^IO= 0, f =1MHz

Note 1

Note 2

Measured with input leads shorted together and output leads shorted together.

Special Selections are available on request. Please consult the factory.

5/12/00

DB91039-AAS/A3

Input Current to Trigger vs.

Anode to Cathode Voltage

Input Current to Trigger vs.

Ambient Temperature

100

Normalized to

V_AK= 50V

=10kΩ

T_A^GK= 25 °C

R_GK=300Ω

1kΩ

R_GK=300Ω

1kΩ

10kΩ

27kΩ

1.0

10kΩ

27kΩ

56kΩ

1.0

0.4

56kΩ

Normalized to V_AK= 50V,

0.2

0.1

0.2

0.1

R_GK=10kΩ, T_A= 25 °C

50 100 200

-60 -40 -20

20 40 60 80 100 120

Anode to cathode voltage V_AK( V )

Ambient temperature T_A( °C )

Input Current to Trigger Distribution

vs. Ambient Temperature

Input Current to Trigger vs.

Pulse Width

100

Normalized to

V_AK= 50V

=10kΩ

T_A^GK= 25 °C

Normalized to

R_GK=300Ω

= 50V

R^AK=10kΩ

T_A^GK= 25 °C

1kΩ

90th percentile

10th percentile

10kΩ

27kΩ

56kΩ

0.4

0.2

0.1

-40 -20

20 40 60 80 100

4 6 10 20 40 60 100 200 400 1000

Ambient temperature T_A( °C )

Pulse width ( µs )

Input Characteristics I_Fvs. V_F

Turn on Time vs. Input Current

100

V_AK= 50V

10kΩ R_GK=1kΩ

t = t_d+ t_r

t_r^o=ⁿ1µs

25°C

100°C

-55°C

56kΩ

0.4

0.2

0.1

0 10 20 30 40 50 60 70 80 90 100

Input current I_F(mA)

0.5

1.5

2.5

Forward voltage V_F( V )

5/12/00

DB91039-AAS/A3

Holding Current vs. Ambient

Temperature

Maximum Transient Thermal Impedence

10000

1000

1. Lead temperature measured at the

widest portion of the SCR anode lead.

2. Ambient temperature measured at

a point 1/2" from the device.

Normalized to

V_AK= 50V

=10kΩ

T_A^GK= 25 °C

400

200

4000

2000

R_GK=300Ω

1kΩ

Junction to ambient

100

1000

400

200

100

10kΩ

27kΩ

56kΩ

-60 -40 -20

20 40 60 80 100 120

0.001 0.01

0.1

1 2 4 10

100

Ambient temperature T_A( °C )

Time (seconds)

Off State Forward Current vs.

Ambient Temperature

On State Current vs. Maximum

Allowable Temperature

10000

4000

2000

1000

100

1. Ambient temp. half-sine wave avg

2. Ambient temp. DC current

3. Anode lead temp. half-sine wave avg

4. Anode lead temp. DC current

Normalized to

= 50V

T_A^AK= 25 °C

400

200

100

V_AK= 400V

V_AK= 200V

V_AK= 50V

1. 2.

0.4

0.8

100

0.2

0.6

1.0

Ambient temperature T_A( °C )

On state current ( Α )

On State Characteristics

dV/dt vs. Ambient temperature

1000

400

R_GK=300Ω

0.4

0.2

0.1

100

1kΩ

10kΩ

27kΩ

0.04

0.02

0.01

0.4

Increases to forward

breakover voltage

56kΩ

0.1

100

Ambient temperature T_A( °C )

On state voltage V_T( V )

5/12/00

DB91039-AAS/A3

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