H11D4SM [ISOCOM]

Transistor Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT, PLASTIC PACKAGE-6;


型号：	H11D4SM
厂家：	ISOCOM COMPONENTS
描述：	Transistor Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT, PLASTIC PACKAGE-6 输出元件光电
文件：	总3页 (文件大小：50K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

H11D1X, H11D2X, H11D3X, H11D4X

H11D1, H11D2, H11D3, H11D4

HIGH VOLTAGE OPTICALLY

COUPLED ISOLATOR

PHOTOTRANSISTOR OUTPUT

Dimensions in

'X'SPECIFICATIONAPPROVALS

2.54

VDE0884in3availableleadforms:-

-STD

-Gform

7.0

6.0

-SMDapprovedtoCECC00802

1.2

7.62

6.62

DESCRIPTION

7.62

0.26

4.0

3.0

The H11D series of optically coupled isolators

consist of infrared light emitting diode and

NPN silicon photo transistor in a standard 6 pin

dual in line plastic package.

13°

Max

0.5

3.0

3.35

0.5

FEATURES

Options :-

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

10mm lead spread - add G after part no.

Surface mount - add SM after part no.

Tape&reel - add SMT&R after part no.

High Isolation Voltage (5.3kV ,7.5kV

High BV_CER( 300V - H11D^R1^M,^SH11D2^P)^K

( 200V - H11D3, H11D4 )

Storage Temperature

Operating Temperature

Lead Soldering Temperature

-55°C to + 150°C

-55°C to + 100°C

)

(1/16 inch (1.6mm) from case for 10 secs) 260°C

All electrical parameters 100% tested

Custom electrical selections available

INPUT DIODE

APPLICATIONS

Forward Current

Reverse Voltage

Power Dissipation

60mA

100mW

DC motor controllers

Industrial systems controllers

Measuring instruments

Signal transmission between systems of

different potentials and impedances

OUTPUT TRANSISTOR

Collector-emitter Voltage BV_CER(R_BE= 1MΩ )

H11D1, H11D2

H11D3, H11D4

300V

200V

Collector-base Voltage BV_CBO

H11D1, H11D2

H11D3, H11D4

Emitter-collector Voltage BV_ECO

300V

200V

OPTION G

7.62

OPTION SM

SURFACE MOUNT

Power Dissipation

300mW

POWER DISSIPATION

0.6

0.1

1.25

0.75

0.26

Total Power Dissipation

(derate linearly 2.67mW/°C above 25°C)

260mW

10.46

9.86

10.16

ISOCOM INC

1024 S.GreenvilleAve,Suite240,

Allen, TX75002 USA

ISOCOMCOMPONENTSLTD

Unit25B, ParkViewRoadWest,

Park View Industrial Estate, Brenda Road

Tel:(214)495-0755 Fax:(214)495-0901

e-mail info@isocom.com

Hartlepool,TS251YDEnglandTel:(01429)863609

Fax:(01429)863581 e-mail sales@isocom.co.uk

http://www.isocom.com

7/12/00

DB91077m-AAS/A1

ELECTRICAL CHARACTERISTICS ( T_A= 25°C Unless otherwise noted )

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V_F)

Reverse Voltage (V_R)

Reverse Current (I_R)

1.2

1.5

µA

I_F= 10mA

I_R= 10µA

V_R= 6V

Output

Collector-emitter Breakdown (BV_CER

H11D1, H11D2

)

300

200

I = 1mA, R_BE= 1MΩ

H11D3, H11D4

(^Cnote 2 )

Collector-base Breakdown (BV_CBO

H11D1, H11D2

)

300

200

I_C= 100µA

I_E= 100µA

H11D3, H11D4

Emitter-collector Breakdown (BV_ECO

Collector-emitter Dark Current (I_CER

H11D1, H11D2

)

100 nA

250 µA

V_CE= 200V,R_BE=1MΩ

V = 200V,R_BE=1MΩ,

T_A^C=^E100°C

H11D3, H11D4

100 nA

250 µA

V_CE= 100V,R_BE=1MΩ

V = 100V,R_BE=1MΩ,

T_A^C=^E100°C

Coupled Current Transfer Ratio (CTR)

Collector-emitter Saturation VoltageV_CE(SAT)

10mA I_F, 10V V_CE,

R_BE= 1MΩ

10mA I_F, 0.5mA I_C,

0.4

R_BE= 1MΩ

Input to Output Isolation Voltage V_ISO5300

7500

V_RMS

V_PK

Ω

µs

See note 1

V_IO= 500V (note 1)

V_CC= 10V, I_C= 2mA,

R_L= 100Ω , fig 1

Input-output Isolation Resistance R_ISO5x10¹⁰

Turn-on Time

Turn-off Time

ton

toff

Note 1

Note 2

Measured with input leads shorted together and output leads shorted together.

Special Selections are available on request. Please consult the factory.

V_CC

Input

t_on

t_off

R_L= 100Ω

t_f

t_r

Output

10%

90%

FIG 1

DB91077m-AAS/A1

7/12/00

Collector Power Dissipation vs. Ambient Temperature

Relative Current Transfer Ratio vs.

Forward Current ( normalised to 10mA I_F)

400

300

200

1.0

0.1

100

V_CE= 10V

T_A^BE= 25°C

= 1MΩ

0.01

-30

100 125

Forward current I_F(mA)

Ambient temperature T_A( °C )

Forward Current vs. Ambient Temperature

Relative Current Transfer Ratio

vs. Ambient Temperature

2.4

2.2

Normalised to V_CE= 10V ,

I_F= 10mA , R_BE= 1MΩ ,

T_A= 25°C

2.0

1.8

I_F= 20mA

I_F= 10mA

I_F= 5mA

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-30

100 125

-30

100

Ambient temperature T_A( °C )

Collector-base Current vs.

Ambient Temperature

Forward Voltage vs. Forward Current

800

700

600

500

1.4

1.3

V_CB= 10V

I_F= 50mA

T_A= -55°C

T_A= +25°C

1.2

1.1

400

300

200

V_CB= 10V V_CB= 10V

V = 200V

I_F^CB= 10mA I_F= 10mA I_F= 5mA

1.0

T_A= +100°C

0.9

0.8

100

0.1 0.2 0.5

5 10 20

-30

100

Forward current I_F(mA)

Ambient temperature T_A( °C )

DB91077m-AAS/A1

7/12/00

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