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H11G2-SM [ISOCOM]

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H11G2-SM
型号： H11G2-SM
厂家： ISOCOM COMPONENTS    ISOCOM COMPONENTS
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H11G1, H11G2, H11G3  
H11G1X  
HIGH VOLTAGE DARLINGTON  
OUTPUT OPTICALLY COUPLED  
ISOLATOR  
APPROVALS  
Dimensions in mm  
2.54  
z
ULrecognised,FileNo.E91231  
Package Code " JJ "  
1
6
7.0  
6.0  
'X'SPECIFICATIONAPPROVALS  
z
H11G1XVDE0884in3availableleadform:-  
2
3
5
4
-STD  
-Gform  
1.2  
-SMDapprovedtoCECC00802  
7.62  
6.62  
7.62  
4.0  
3.0  
DESCRIPTION  
13°  
Max  
The H11G_ series are optically coupled isolators  
consisting of an infrared light emitting diode and a  
high voltage NPN silicon photo darlington which  
has an integral base-emitter resistor to optimise  
switching speed and elevated temperature  
characteristics in a standard 6pin dual in line plastic  
package.  
0.5  
3.0  
0.26  
3.35  
0.5  
ABSOLUTEMAXIMUMRATINGS  
(25°Cunlessotherwisespecified)  
Storage Temperature  
OperatingTemperature  
Lead SolderingTemperature  
-40°Cto+125°C  
-25°Cto+100°C  
FEATURES  
z
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
HighIsolationVoltage(5.3kVRMS,7.5kVPK)  
HighCurrentTransferRatio(1000%min)  
HighBVCEO (H11G1-100Vmin.)  
Low collector dark current :-  
(1/16inch(1.6mm)fromcasefor10secs) 260°C  
INPUTDIODE  
z
z
z
z
ForwardCurrent  
ReverseVoltage  
Power Dissipation  
50mA  
6V  
70mW  
100nAmax.at80VVCE  
z
Lowinputcurrent1mAIF  
OUTPUTTRANSISTOR  
APPLICATIONS  
z
z
z
z
Modems  
Copiers,facsimiles  
Numericalcontrolmachines  
Signal transmission between systems of  
different potentials and impedances  
Collector-emitterVoltageBVCEO  
H11G3,H11G2,H11G1  
Collector-baseVoltageBVCBO  
H11G3,H11G2,H11G1  
Emitter-baseVoltageBVEBO  
CollectorCurrent  
55,80,100V  
55,80,100V  
6V  
150mA  
300mW  
OPTION G  
OPTION SM  
SURFACE MOUNT  
7.62  
Power Dissipation  
POWERDISSIPATION  
0.6  
0.1  
1.25  
0.75  
0.26  
Total Power Dissipation  
350mW  
10.46  
9.86  
10.16  
ISOCOMCOMPONENTS2004LTD  
Unit25B, ParkViewRoadWest,  
Park View Industrial Estate, Brenda Road  
Hartlepool,TS251UDEngland  
Tel:(01429)863609 Fax:(01429)863581 e-mail  
sales@isocom.co.ukhttp://www.isocom.com  
17/7/08  
DB92008  
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
1.2  
1.5  
10  
V
IF = 10mA  
ReverseCurrent(IR)  
μA  
VR =4V  
Output  
Collector-emitter Breakdown (BVCEO )  
H11G1  
H11G2  
H11G3  
100  
80  
55  
V
V
V
I = 1mA  
IC = 1mA  
ICC = 1mA  
Collector-base Breakdown (BVCBO  
)
H11G1  
H11G2  
H11G3  
100  
80  
55  
6
V
V
V
V
I = 100μA  
IC = 100μA  
IC = 100μA  
IEC = 0.1mA  
Emitter-base Breakdown (BVEBO  
)
Collector-emitter Dark Current (ICEO  
)
H11G1  
H11G2  
H11G3  
100 nA  
100 nA  
100 nA  
VCE = 80V  
VCE = 60V  
VCE = 30V  
Coupled Collector Output Current ( IC )  
H11G1,H11G2  
H11G1,H11G2  
H11G3  
100  
5
2
mA  
mA  
mA  
10mAIF,1.2VVCE  
1mAIF,5VVCE  
1mAIF,5VVCE  
Collector-emitterSaturationVoltageVCE(SAT)  
H11G1,H11G2  
H11G1,H11G2  
H11G3  
1.0  
1.2  
1.2  
V
V
V
1mAI ,1mAIC  
16mAFI ,50mAI  
20mAIF,50mAICC  
See notFe 1  
Input to Output Isolation Voltage VISO 5300  
VRMS  
VPK  
Ω
7500  
See note 1  
Input-output Isolation Resistance RISO 5x1010 1011  
V =500V(note1)  
Input-output Capacitance  
Cf  
0.6  
pF  
VI=O 0,f=1MHz  
Response time (Rise), tr  
Responsetime(Fall), tf  
100  
20  
μs  
μs  
IC=20mA,VCE =2V,  
RL =100Ω  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
FIGURE 1  
VCC  
Input  
ton  
toff  
tf  
IF = 10mA  
100Ω  
tr  
Output  
Input  
Output  
10%  
90%  
10%  
90%  
DB92008m-AAS/A5  
17/7/08  
Collector Power Dissipation vs. Ambient Temperature  
Normalized Output Current vs.  
Collector-emitter Voltage  
250  
100  
10  
50mA  
10mA  
200  
150  
100  
50  
1.0  
0.1  
IF = 1mA  
Normalized to  
IF = 1mA  
(300μs pulse),  
VCE = 5V  
0
0.01  
0
1
2
3
4
5
6
-30  
0
25  
50  
75  
100 125  
Collector-emitter voltage VCE ( V )  
Ambient temperature TA ( °C )  
Forward Current vs. Ambient Temperature  
Normalized Output Current vs.  
Ambient Temperature  
80  
70  
60  
50  
100  
10  
50mA  
10mA  
40  
30  
1.0  
0.1  
IF = 1mA  
Normalized to  
I = 1mA  
20  
(3F 00μs pulse),  
V
= 5V  
10  
0
TACE= 25 °C  
0.01  
-30  
0
25  
50  
75  
100 125  
-50  
-25  
0
25  
50 75 100  
Ambient temperature TA ( °C )  
Ambient temperature TA ( °C )  
Collector Dark Current vs.  
Ambient Temperature  
Normalized Output Current vs.  
Input Current  
100k  
10k  
100  
VCE = 80V  
10  
1k  
50V  
VCE  
1.0  
100  
Normalized to  
I = 1mA  
(3F 00μs pulse),  
0.1  
10  
1
VCE = 10V  
V
= 5V  
TACE= 25 °C  
0.01  
0.1  
1.0  
10 100  
-30  
0
25  
50  
75  
100  
Input current IF (mA)  
Ambient temperature TA ( °C )  
DB92008m-AAS/A5  
17/7/08  

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