ILQ1X [ISOCOM]
Optoelectronic Device,;
| 型号： | ILQ1X |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | Optoelectronic Device, |
| 文件： | 总5页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IL1, IL2, IL5, IL74
ILD1, ILD2, ILD5, ILD74
ILQ1, ILQ2, ILQ5, ILQ74
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
IL1
IL2
IL5
IL74
Dimensions in mm
2.54
l
ULrecognised,FileNo.E91231
IL* Package 'FF' (marked I_ _ _ FF)
ILD*/ILQ*Package'GG'(markedI___GG)
1
2
3
6
5
4
7.0
6.0
'X'SPECIFICATIONAPPROVALS
Add 'X' after part number
1.2
3.0
l
VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
7.62
6.62
7.62
4.0
3.0
13°
Max
0.5
l
BSI approved - Certificate No. 8001
DESCRIPTION
ILD1
ILD2
ILD5
ILD74
0.26
3.35
0.5
2.54
The IL*, ILD*, ILQ* series of optically coupled
isolators consist of infrared light emitting diodes
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
1
2
3
4
8
7
6
5
7.0
6.0
FEATURES
l
Options :-
1.2
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
Three package types
HighCurrentTransferRatio(50%min)
HighIsolationVoltage(5.3kVRMS,7.5kVPK)
HighBVCEO (70Vmin)
10.16
9.16
7.62
4.0
3.0
l
l
l
l
13°
Max
0.5
3.0
0.26
3.35
0.5
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5
ILQ1
ILQ2
ILQ5
ILQ74
1
2
3
4
16
15
14
13
APPLICATIONS
l
l
l
l
Computerterminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
2.54
5
6
7
8
12
11
7.0
6.0
10
9
OPTION G
OPTION SM
SURFACEMOUNT
7.62
1.2
20.32
19.32
7.62
4.0
3.0
13°
Max
0.6
0.1
0.5
1.25
0.75
0.26
10.46
9.86
0.26
10.16
3.0
3.35
0.5
ISOCOM INC
1024 S.GreenvilleAve,Suite240,
Allen, TX75002 USA
Tel:(214)495-0755 Fax:(214)495-0901
e-mail info@isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
http://www.isocom.com
1/4/03
DB91088m-AAS/A6
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
OperatingTemperature
Lead Soldering Temperature
-40°Cto+125°C
-25°Cto+100°C
(1/16inch(1.6mm)fromcasefor10secs) 260°C
INPUTDIODE
ForwardCurrent
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUTTRANSISTOR
Collector-emitterVoltageBVCEO
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5
70V
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74
Emitter-collectorVoltageBVECO
Power Dissipation
50V
6V
150mW
POWERDISSIPATION
Total Power Dissipation
170mW
(deratelinearly2.67mW/°Cabove25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
IF =50mA
Input
ForwardVoltage(VF)
Reverse Current (IR)
1.2
1.65
10
V
µA
VR =4V
Output
Collector-emitterBreakdown(BVCEO
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5
)
70
V
IC = 1mA , ( Note 2 )
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74
50
6
V
V
nA
IC = 1mA , ( Note 2 )
IE =100µA
VCE =10V
Emitter-collectorBreakdown(BVECO
Collector-emitterDarkCurrent(ICEO
)
)
50
Coupled CurrentTransferRatio(CTR)(Note2)
IL1,ILD1,ILQ1
20
100
50
300
500
400
%
%
%
10mAIF,10VVCE
10mAI ,10VV
IL2,ILD2,ILQ2
IL5,ILD5,ILQ5
10mAIFF,10VVCE
CE
IL74,ILD74,ILQ74
12.5
%
16mAIF,5VVCE
Saturated Current Transfer Ratio
IL1,ILD1,ILQ1
IL2,ILD2,ILQ2
IL5,ILD5,ILQ5
IL74,ILD74,ILQ74
Collector-emitterSaturation Voltage,VCE(SAT)
Input to Output Isolation Voltage VISO
Input to Output Isolation Voltage VISO
Input-output Isolation Resistance RISO
Output Rise Time tr
75
170
100
%
%
%
%
V
10mAIF,0.4VVCE
10mAIF,0.4VVCE
10mAIF,0.4VVCE
16mAIF,0.5VVCE
16mAIF,2mAIC
12.5
0.4
5300
7500
5x1010
VRMS See note 1
VPK See note 1
Ω
µs
µs
VIO=500V(note1)
IF =10mA
VCC=5V,RL =75Ω
2
2
Output Fall Time
tf
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB91088m-AAS/A6
1/4/03
Collector Power Dissipation vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Ambient Temperature
200
1.5
1.0
IF = 10mA
VCE = 0.4V
150
100
0.5
0
50
0
-30
0
25
50
75
100
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Forward Current
Forward Current vs. Ambient Temperature
60
50
2.8
2.4
40
30
2.0
1.6
1.2
0.8
20
10
0
V
= 0.4V
TACE= 25°C
0.4
0
-30
0
25
50
75
100 125
1
2
5
10
20
50
Forward current IF (mA)
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.5
1.0
IF = 10mA
VCE = 10V
1.0
0.8
0.6
0.4
0.5
0
V
= 10V
TACE= 25°C
0.2
0
1
2
5
10
20
50
-30
0
25
50
75
100
Forward current IF (mA)
Ambient temperature TA ( °C )
DB91088m-AAS/A6
1/4/03
Fig.1 Forword Current
vs. Ambient Temperatute
Fig.2 Collector Power Dissiption
vs. Ambient Temperature
60
50
40
30
20
10
0
200
150
100
50
0
-25
-25
0
25
50
75 100 125
0
25
50
75 100 125
Ambient temperature Ta (oC)
Ambient temperature Ta (oC)
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
Fig.4 Forward Current vs. Forward
Voltage
6
500
Ta= 25OC
Ta= 75oC
50oC
25oC
0oC
5
4
3
2
1
0
200
100
-25oC
50
20
10
5
2
1
0
5
10
15
0
0.5 1.0 1.5 2.0 2.5 3.0
Forward voltage VF(V)
Forward current IF(mA)
Fig.5 Current Transfer Ratio vs.
Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
200
30
Ta= 25oC
Pc(MAX.)
VCE= 5V
Ta= 25oC
IF= 30mA
180
160
140
120
100
80
25
20
15
10
5
20mA
10mA
60
5mA
40
20
0
0
1
2
5
10
20
50
0
1
2
3
4
5
6
7
8
9
Forward current IF(mA)
Collector-emitter voltage VCE (V)
01/04/03
DB91088m-AAS/A6
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
150
0.16
IF = 5mA
IF= 20mA
Ic= 1mA
0.14
VCE= 5V
0.12
0.10
0.08
0.06
0.04
0.02
0
100
50
0
-30
0
25
50
75
100
-25
0
25
50
75
100
Ambient temperature Ta (oC)
Ambient temperature Ta (oC)
Fig.9 Collector Dark Current vs.
Fig.10 Response Time vs. Load
Resistance
Ambient Temperature
-5
10
500
VCE= 2V
Ic= 2mA
VCE= 20V
-6
200
Ta= 25oC
100
10
-7
50
tr
10
20
10
5
tf
-8
10
td
-9
10
ts
1
2
1
-10
10
0.5
-11
10
0.2
0.05
-25
0
25
50
75
100
0.1 0.2 0.5
2
5
10
Ambient temperature Ta (oC)
Load resistance RL(k
)
Fig.11 Frequency Response
Test Circuit for Response Time
Input
Vcc
V
CE = 5V
Output
RL
Ic= 2mA
10%
90%
RD
Output
Input
Ta= 25oC
0
-5
ts
td
tr
tf
Test Circuit for Frequency Response
-10
RL= 10k
1k
100
Vcc
-15
-20
RL
RD
Output
0.5 1
2
5 10 20
100
500 1000
Frequency f (kHz)
01/04/03
DB91088m-AAS/A6
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