IS202X-G [ISOCOM]
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-6;
| 型号： | IS202X-G |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-6 输出元件 光电 |
| 文件： | 总3页 (文件大小：840K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IS201, IS202, IS203, IS204,
ISD201, ISD202, ISD203, ISD204,
ISQ201, ISQ202, ISQ203, ISQ204
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
Dimensions in mm
IS201
IS202
IS203
IS204
2.54
l
UL recognised, File No. E91231
1
2
3
6
5
4
7.0
6.0
'X'SPECIFICATIONAPPROVALS
l
l
VDE 0884 in 3 available lead form : -
- STD
- G form
-SMDapprovedtoCECC00802
1.2
3.0
7.62
6.62
7.62
IS20*CertifiedtoEN60950bythe
following Test Bodies :-
4.0
3.0
Nemko-CertificateNo.P01102464
Fimko-CertificateNo.FI18166
Semko-ReferenceNo.0202037/01-22
Demko-CertificateNo.311158-01
13°
Max
0.5
ISD201
ISD202
ISD203
ISD204
0.26
3.35
0.5
2.54
l
BSIapproved-CertificateNo. 8001
DESCRIPTION
TheIS20*,ISD20*,ISQ20*series of optically
coupled isolators consist of infrared light
emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
1
2
3
4
8
7
6
5
7.0
6.0
1.2
10.16
9.16
FEATURES
7.62
l
Options :-
4.0
3.0
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kVRMS ,7.5kVPK
High BVCEO (70V min)
All electrical parameter 100% tested
Custom electrical selections available
13°
Max
0.5
3.0
l
l
l
l
)
0.26
3.35
0.5
ISQ201
ISQ202
ISQ203
ISQ204
1
2
3
4
16
15
14
13
APPLICATIONS
2.54
l
l
l
Computer terminals
Industrial systems controllers
Signal transmission between systems of
different potentials and impedances
5
6
7
8
12
11
7.0
6.0
10
9
OPTION G
OPTION SM
SURFACEMOUNT
7.62
1.2
20.32
19.32
7.62
4.0
3.0
0.6
0.1
13°
Max
1.25
0.75
0.5
0.26
10.46
9.86
10.16
0.26
3.0
3.35
0.5
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
12/3/03
DB91021m-AAS/A4
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
OperatingTemperature
Lead Soldering Temperature
-40°Cto+125°C
-25°Cto+100°C
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
70V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.2
1.65
10
V
IF = 50mA
Reverse Current (IR)
µA
V
VR =4V
Output
Collector-emitter Breakdown (BV
)
70
6
IC = 1mA
( NoteCE2O )
Emitter-collector Breakdown (BVECO
)
V
IE = 100µA
Collector-emitter Dark Current (ICEO
)
50
nA
VCE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
IS201, ISD201, ISQ201
75
10
125
30
225
50
%
%
%
%
%
%
%
%
10mA IF , 10V VCE
1mA IF , 10V VCE
10mA IF , 10V VCE
1mA IF , 10V VCE
10mA IF , 10V VCE
1mA I , 10V VCE
10mAFIF , 10V VCE
1mA IF , 10V VCE
IS201, ISD201, ISQ201
IS202, ISD202, ISQ202
IS202, ISD202, ISQ202
IS203, ISD203, ISQ203
IS203, ISD203, ISQ203
IS204, ISD204, ISQ204
IS204, ISD204, ISQ204
250
450
400
200
100
Collector-emitter Saturation Voltage VCE(SAT)
0.2
0.4
V
10mA IF , 2mA IC
See note 1
See note 1
VIO = 500V (note 1)
IF = 10mA
VCE = 5V, RL = 75Ω
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance RISO 5x1010
VRMS
VPK
Ω
µs
µs
Output Turn on Time
Output Turn off Time
tON
tOFF
3.0
2.5
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
12/3/03
DB91021m-AAS/A4
Relative Current Transfer Ratio
vs. Ambient Temperature
Collector Power Dissipation vs. Ambient Temperature
200
1.5
1.0
IF = 10mA
VCE = 10V
150
100
0.5
0
50
0
-30
0
25
50
75
100
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Ambient Temperature
60
50
1.5
1.0
IF = 1mA
VCE = 10V
40
30
20
10
0
0.5
0
-30
0
25
50
75
100 125
-30
0
25
50
75
100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
0.28
0.24
1.4
I = 10mA
IFC = 2mA
1.2
1.0
0.8
0.20
0.16
0.12
0.08
0.6
0.4
0.2
0
V
= 10V
TACE= 25°C
0.04
0
-30
0
25
50
75
100
1
2
5
10
20
50
Ambient temperature TA ( °C )
Forward current IF (mA)
DB91021m-AAS/A4
12/3/03
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