IS205 [ISOCOM]

NON-BASE LEAD OPTICALLY COUPLED ISOLATOR; 非基本LEAD光耦合隔离器


型号：	IS205
厂家：	ISOCOM COMPONENTS
描述：	NON-BASE LEAD OPTICALLY COUPLED ISOLATOR 非基本LEAD光耦合隔离器
文件：	总3页 (文件大小：72K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IS205X, IS206X

IS205, IS206

NON-BASE LEAD

OPTICALLY COUPLED ISOLATOR

PHOTOTRANSISTOR OUTPUT

APPROVALS

Dimensions in mm

2.54

ULrecognised,FileNo.E91231

Package Code " GG "

7.0

6.0

'X'SPECIFICATIONAPPROVALS

1.2

VDE 0884 in 3 available lead form :-

- STD

- G form

-SMDapprovedtoCECC00802

7.62

6.62

7.62

4.0

3.0

13°

Max

0.5

3.0

DESCRIPTION

0.26

TheIS205,IS206series of optically coupled

isolators consist of an infrared light emitting

diode and a NPN silicon photo transistor in a

standard 6 pin dual in line plastic package with

the base pin unconnected.

3.35

0.5

ABSOLUTEMAXIMUMRATINGS

(25°Cunlessotherwisespecified)

FEATURES

Options :-

Storage Temperature

OperatingTemperature

Lead SolderingTemperature

-55°Cto+150°C

-55°Cto+100°C

10mm lead spread - add G after part no.

Surface mount - add SM after part no.

Tape&reel - add SMT&R after part no.

HighCurrentTransferRatio(50%min)

HighIsolationVoltage(5.3kV_RMS,7.5kV_PK)

Base pin unconnected for improved

noise immunity in high EMI

(1/16inch(1.6mm)fromcasefor10secs) 260°C

INPUTDIODE

ForwardCurrent

ReverseVoltage

Power Dissipation

60mA

105mW

environment

APPLICATIONS

DCmotorcontrollers

Industrial systems controllers

Signal transmission between systems of

different potentials and impedances

OUTPUTTRANSISTOR

Collector-emitterVoltageBV_CEO

Emitter-collectorVoltageBV_ECO

CollectorCurrent

30V

50mA

160mW

OPTION G

OPTION SM

SURFACEMOUNT

Power Dissipation

7.62

POWERDISSIPATION

Total Power Dissipation

(deratelinearly2.67mW/°Cabove25°C)

200mW

0.6

0.1

0.26

10.16

1.25

0.75

10.46

9.86

ISOCOMCOMPONENTS2004 LTD

Unit25B, ParkViewRoadWest,

ParkView Industrial Estate, Brenda Road

Hartlepool,Cleveland,TS251UD

Tel:(01429)863609 Fax:(01429)863581

17/7/08

DB92011

ELECTRICAL CHARACTERISTICS ( T_A= 25°C Unless otherwise noted )

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

ForwardVoltage(V_F)

1.2

1.5

I_F=10mA

ReverseCurrent(I_R)

μA

V_R=6V

Output

Collector-emitterBreakdown(BV_CEO

)

I_C=1mA

( Note 2 )

Emitter-collectorBreakdown(BV_ECO

Collector-emitterDarkCurrent(I_CEO

)

I_E=100μA

V_CE=10V

Coupled CurrentTransferRatio(CTR)(Note2)

IS205

IS206

100

10mAI_F,10VV_CE

Collector-emitterSaturationVoltageV_CE(SAT)

Input to Output Isolation Voltage V_ISO

0.4

10mAI_F,0.5mAI_C

5300

7500

V_RMS

V_PK

See note 1

Input-output Isolation Resistance R_ISO5x10¹⁰

V_IO=500V(note1)

Output Rise Time tr

μs

V_CC=5V,

I_F=10mA,R_L=75Ω

OutputFallTime

Note 1

Note 2

Measured with input leads shorted together and output leads shorted together.

Special Selections are available on request. Please consult the factory.

DB92011m-AAS/A2

17/7/08

Collector Power Dissipation vs. Ambient Temperature

Collector Current vs. Collector-emitter Voltage

200

T_A= 25°C

150

100

I_F= 5mA

-30

100 125

Collector-emitter voltage V_CE( V )

Ambient temperature T_A( °C )

Collector-emitter Saturation

Voltage vs. Ambient Temperature

Forward Current vs. Ambient Temperature

0.14

0.12

I = 10mA

I_C^F= 0.5mA

0.10

0.08

0.06

0.04

0.02

-30

100

-30

100 125

Ambient temperature T_A( °C )

Relative Current Transfer Ratio

vs. Ambient Temperature

Relative Current Transfer Ratio

vs. Forward Current

1.4

1.5

1.0

I_F= 10mA

1.2

_CE= 10V

1.0

0.8

0.6

0.4

0.5

= 10V

T_A^CE= 25°C

0.2

-30

100

Ambient temperature T_A( °C )

Forward current I_F(mA)

DB92011m-AAS/A2

17/7/08

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