IS610SM [ISOCOM]

FET Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT, PLASTIC PACKAGE-6;
IS610SM
型号: IS610SM
厂家: ISOCOM COMPONENTS    ISOCOM COMPONENTS
描述:

FET Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT, PLASTIC PACKAGE-6

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IS610X, IS611X  
IS610, IS611  
PHOTON COUPLED BILATERAL  
ANALOG FET  
APPROVALS  
Dimensions in mm  
2.54  
l
UL recognised, File No. E91231  
'X' SPECIFICATION APPROVALS  
1
2
6
5
7.0  
6.0  
l
VDE 0884 in 2 available lead forms : -  
- STD  
- G form  
DESCRIPTION  
3
4
7.62  
max.  
The IS610, IS611 are optically coupled isolators  
consisting of infrared light emitting diode and a  
symmetrical bilateral silicon photodetector. The  
detector is electrically isolated from the input and  
performs like an ideal isolated FET designed for  
distortion-free control of low level ac and dc  
analog signals.The IS610, IS611 are mounted in a  
standard 6pin dual in line plastic package.  
8.3 max.  
5.1  
max.  
0.5  
min.  
3.9  
3.1  
15°  
Max  
0.25  
0.48  
APPLICATIONS (cont.)  
As an Analog Signal Switch  
FEATURES  
l
Isolated sample and hold circuit  
Multiplexed, optically isolated A/D conversion  
l
Options :-  
l
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
ABSOLUTE MAXIMUM RATINGS  
(25°C unless otherwise specified)  
As a remote variable resistor  
l
l
l
l
100to 300MΩ  
99.9% Linearity  
15 pF Shunt Capacitance  
100GI/O Isolation Resistance  
Storage Temperature  
Operating Temperature  
Lead Soldering Temperature  
-55°C to + 150°C  
-55°C to + 100°C  
(1/16 inch (1.6mm) from case for 10 secs) 260°C  
As an Analog Signal Switch  
l
l
l
l
Extremely low Offset Voltage  
60V pk-pk Signal Capability  
No Charge Injection or Latchup  
ton, toff 15µs  
INPUT DIODE  
Forward Current  
Reverse Voltage  
Power Dissipation  
60mA  
6V  
100mW  
APPLICATIONS  
As a remote variable resistor  
l
l
l
Isolated variable attenuator  
Automatic gain control  
Active filter fine tuning / band switching  
OUTPUT TRANSISTOR  
Breakdown Voltage  
Detector Current (continuous)  
Power Dissipation  
±30V  
±100mA  
300mW  
OPTION G  
8.3 max  
OPTION SM  
SURFACEMOUNT  
1.2  
0.6  
1.4  
0.9  
POWER DISSIPATION  
0.26  
10.2  
9.5  
Total Power Dissipation  
350mW  
10.16  
ISOCOMCOMPONENTSLTD  
Unit25B, ParkViewRoadWest,  
Park View Industrial Estate, Brenda Road  
Hartlepool,TS251YDEnglandTel:(01429)863609  
Fax:(01429)863581 e-mail sales@isocom.co.uk  
http://www.isocom.com  
19/4/99  
DB91069AAS/A2  
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
Reverse Voltage (VR)  
Reverse Current (IR)  
1.1  
1.75  
10  
V
V
µA  
IF = 16mA  
IR = 10µA  
VR = 5V  
5
Output  
(either  
polarity)  
Breakdown Voltage - V( BR )46 (Note 2)  
Off-state Dark Current - I46  
30  
V
I46 = 10µA,IF = 0  
50  
50  
nA  
V = 15V, IF = 0,  
TA46= 25°C  
µA  
V = 15V, I = 0,  
TA46= 100°C F  
Off-state Resistance - r46  
Capacitance - C46  
300  
ΜΩ  
pF  
V46 = 15V, I = 0  
V46 = 0, IF =F0,  
f = 1 MHz  
15  
Coupled On-state Resistance - r46 (Note 2)  
IS611  
170  
200  
IF = 16mA, I46 = 100µA  
IF = 16mA, I46 = 100µA  
IS610  
On-state Resistance - r64 (Note 2)  
IS611  
IS610  
170  
200  
IF = 16mA, I64 = 100µA  
IF = 16mA, I64 = 100µA  
Input to Output Isolation Voltage VISO 5300  
7500  
V
See note 1  
See note 1  
VIO = 500V (note 1)  
VIO= 0, f =1MHz  
VRMS  
PK  
pF  
Input-output Isolation Resistance R  
1011  
Input-output Capacitance  
CIfSO  
2
Turn-on Time  
Turn-off Time  
Resistance, non-linearity and asymmetry  
ton  
toff  
25  
25  
0.1  
µs  
µs  
%
IF= 16mA, V46 = 5V,  
RL = 50Ω  
IF= 16mA, f = 1kHz  
I46= 25µA RMS  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
19/4/99  
DB91069-AAS/A2  
On-state Resistance vs. Ambient Temperature  
Forward Current vs. Ambient Temperature  
3
2
80  
70  
60  
50  
Normalized to  
IF = 16mA  
I46 = 25µA  
TA = 25 °C  
median  
device  
40  
30  
1
0.8  
observed  
range  
20  
0.6  
0.4  
10  
0
-50 -25  
0
25  
50  
75 100  
-30  
0
25  
50  
75  
100 125  
Ambient temperature TA ( °C )  
Ambient temperature TA ( °C )  
Region of Linear Resistance  
Normalized Off-state current vs.  
Ambient Temperature  
100  
10000  
1000  
100  
100  
40  
20  
maximum  
RMS voltage  
40  
20  
10  
10  
4
maximum  
RMS current  
4
Normalized to  
V46 = 15V  
IF = 0  
10  
2
0
2
0
TA = 25 °C  
1.0  
100  
1000  
10k  
100k  
0
25  
50  
75  
100  
Ambient temperature TA ( °C )  
On-state resistance r (on) (Ω)  
Resistive non-linearity vs.  
D.C. Bias  
Input Current vs. Input Voltage  
100  
5
4
40  
20  
10  
-25°C  
TA = 75°C  
3
2
4
2
1
25°C  
I = 10µA RMS  
r46(on) = 200Ω  
1
0
0.4  
0.2  
0.1  
0
50 100 150 200 250 300 350  
D.C. bias voltage V46 (mV)  
DB91069-AAS/A2  
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6  
Forward voltage VF (V)  
19/4/99  

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