ISP321-4GBSM [ISOCOM]
Transistor Output Optocoupler, 4-Element, 5300V Isolation, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC PACKAGE-16;
| 型号： | ISP321-4GBSM |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | Transistor Output Optocoupler, 4-Element, 5300V Isolation, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC PACKAGE-16 输出元件 光电 |
| 文件： | 总3页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISP321-1X, ISP321-2X, ISP321-4X
ISP321-1, ISP321-2, ISP321-4
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
ISP321-1X
ISP321-1
Dimensions in mm
2.54
z
ULrecognised,FileNo.E91231
Package code " EE "
'X'SPECIFICATIONAPPROVALS
1
2
4
3
7.0
6.0
z
VDE0884in3availableleadform:-
-STD
-Gform
1.2
-SMDapprovedtoCECC00802
5.08
4.08
7.62
z
CertifiedtoEN60950by :-
Nemko-CertificateNo.P01102465
4.0
3.0
13°
Max
0.5
DESCRIPTION
3.0
0.26
3.35
The ISP321-1 , ISP321-2 , ISP321-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
0.5
ISP321-2X
ISP321-2
2.54
1
8
7
6
5
2
3
7.0
6.0
FEATURES
z
Options :-
4
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio ( 50% min)
High Isolation Voltage (5.3kVRMS ,7.5kVPK
High BVCEO ( 80Vmin )
1.2
3.0
10.16
9.16
7.62
4.0
3.0
z
z
z
z
z
)
13°
Max
0.5
All electrical parameters 100% tested
Custom electrical selections available
0.26
3.35
0.5
APPLICATIONS
1
2
3
4
16
15
14
z
z
z
z
Computer terminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
ISP321-4X
ISP321-4
13
2.54
5
6
12
11
7.0
6.0
10
9
7
8
OPTION G
OPTION SM
SURFACE MOUNT
7.62
1.2
20.32
19.32
7.62
4.0
3.0
0.6
0.1
1.25
0.75
13°
Max
0.5
0.26
10.46
9.86
0.26
3.35
10.16
3.0
0.5
ISOCOMCOMPONENTS2004LTD
Unit25B, ParkViewRoadWest,
ParkView Industrial Estate, Brenda Road
Hartlepool,TS251UDEngland
Tel:(01429)863609 Fax:(01429)863581 e-mail
sales@isocom.co.ukhttp://www.isocom.com
17/7/08
DB91075
ABSOLUTEMAXIMUMRATINGS
(25°Cunlessotherwisespecified)
Storage Temperature
OperatingTemperature
Lead SolderingTemperature
-55°Cto+125°C
-30°Cto+100°C
(1/16inch(1.6mm)fromcasefor10secs) 260°C
INPUTDIODE
ForwardCurrent
ReverseVoltage
Power Dissipation
50mA
6V
70mW
OUTPUTTRANSISTOR
Collector-emitterVoltageBVCEO
Emitter-collectorVoltageBVECO
CollectorCurrent
80V
6V
50mA
150mW
Power Dissipation
POWERDISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.0
1.15 1.3
10
V
IF = 10mA
ReverseCurrent(IR)
μA
V
VR =4V
Output
Collector-emitter Breakdown (BV
)
80
6
IC = 0.5mA
( NoCteEO2 )
Emitter-collector Breakdown (BVECO
Collector-emitterDarkCurrent(ICEO
)
V
IE = 100μA
VCE =20V
)
100 nA
Coupled Current Transfer Ratio (CTR) (Note 2)
ISP321-1, ISP321-2, ISP321-4
50
600
600
600
%
%
%
%
V
V
VRMS
VPK
5mA IF , 5V VCE
CTR selection available
GB
BL
GB
100
200
30
1mA IF , 0.4V VCE
8mA IF , 2.4mA IC
1mA IF , 0.2mA IC
See note 1
Collector-emitter Saturation VoltageVCE (SAT)
GB
Input to Output Isolation Voltage VISO 5300
7500
0.4
0.4
Input-output Isolation Resistance RISO 5x1010
Ω
VIO = 500V (note 1)
Response Time (Rise, tr)
ResponseTime(Fall,tf)
4
3
μs
μs
VCE =2V,
IC =2mA,RL =100Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
17/7/08
DB91075
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Low
Collector-emitter Voltage
200
TA = 25°C
25
20
15
50
150
100
40
30
20
10
5
10
50
0
5
0
IF = 2mA
0
0.2
0.4
0.6
0.8
1.0
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Forward Current vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
60
50
50
TA = 25°C
50
40
30
20
30
20
40
30
15
10
20
10
0
10
0
IF = 5mA
-30
0
25
50
75
100 125
0
2
4
6
8
10
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Current Transfer Ratio vs. Forward Current
320
0.28
0.24
280
240
I = 5mA
IFC = 1mA
0.20
0.16
200
160
0.12
0.08
120
80
V
= 5V
TACE= 25°C
0.04
0
40
0
1
2
5
10
20
50
-30
0
25
50
75
100
Forward current IF (mA)
Ambient temperature TA ( °C )
DB91075
17/7/08
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