ISP815X3G [ISOCOM]

Darlington Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-4;


型号：	ISP815X3G
厂家：	ISOCOM COMPONENTS
描述：	Darlington Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-4 输出元件光电
文件：	总3页 (文件大小：102K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ISP815X,ISP825X,ISP845X3,2,1

ISP815,ISP825,ISP845-3,-2,-1

LOW INPUT CURRENT

PHOTODARLINGTON OPTICALLY

COUPLED ISOLATORS

APPROVALS

2.54

ISP815X3,2,1

ISP815-3,2,1

Dimensions in mm

ULrecognised,FileNo.E91231

'X'SPECIFICATIONAPPROVALS

7.0

6.0

VDE 0884 in 3 available lead form : -

- STD

-Gform

1.2

-SMDapprovedtoCECC00802

CertifiedtoEN60950bythefollowing

Test Bodies :-

7.62

5.08

4.08

4.0

3.0

Nemko-CertificateNo.P01102465

Fimko-CertificateNo.FI18162

Semko-ReferenceNo.0202041/01-25

Demko-CertificateNo.311161-01

BSI approved - Certificate No. 8001

13°

0.5

Max

3.0

0.26

3.35

0.5

ISP825X3,2,1

ISP825-3,2,1

DESCRIPTION

TheISP815-3,-2,-1,ISP825-3,-2,-1,ISP845-3,-2,-1

series of optically coupled isolators consist of

infrared light emitting diodes and NPN silicon

photodarlingtons in space efficient dual in line

plastic packages.

2.54

7.0

6.0

FEATURES

1.2

Options :-

10.16

9.16

7.62

10mm lead spread - add G after part no.

Surface mount - add SM after part no.

Tape&reel - add SMT&R after part no.

Low input current 0.25mA I

4.0

3.0

0.5

High CurrentTransfer Ratio ^F(200% min)

13°

Max

3.0

HighIsolationVoltage(5.3kV_RMS

High BV_CEO(70V min)

)

0.26

3.35

0.5

All electrical parameters 100% tested

Custom electrical selections available

ISP845X3,2,1

ISP845-3,2,1

APPLICATIONS

Computer terminals

Industrial systems controllers

Measuring instruments

Signal transmission between systems of

different potentials and impedances

2.54

7.0

6.0

OPTION G

7.62

OPTION SM

SURFACE MOUNT

1.2

20.32

19.32

7.62

4.0

3.0

0.6

0.1

13°

Max

1.25

0.75

0.26

0.5

10.46

9.86

10.16

0.26

3.35

3.0

0.5

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: (01429) 863609 Fax :(01429) 863581

31/3/03

DB92442m-AAS/A6

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

Storage Temperature

OperatingTemperature

-55°C to + 125°C

-30°Cto+100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current

Reverse Voltage

Power Dissipation

50mA

70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV_CEO

Emitter-collector Voltage BV_ECO

Power Dissipation

70V

150mW

POWER DISSIPATION

Total Power Dissipation

200mW

(derate linearly 2.67mW/°C above 25°C)

ELECTRICAL CHARACTERISTICS ( T_A= 25°C Unless otherwise noted )

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V_F)

1.2

1.4

I_F= 20mA

Reverse Current (I_R)

µA

V_R=4V

Output

Collector-emitter Breakdown (BV_CEO

( Note 2 )

)

I_C= 1mA

Emitter-collector Breakdown (BV_ECO

)

I_E= 100µA

Collector-emitter Dark Current (I_CEO

)

100 nA

V_CE= 20V

Coupled Current Transfer Ratio (CTR) (Note 2)

ISP815-3, ISP825-3, ISP845-3

200

400

800

0.25mA I_F, 1.0V V_CE

0.5mA I_F, 1.0V V_CE

1.0mA I_F, 1.0V V_CE

ISP815-2, ISP825-2, ISP845-2

ISP815-1, ISP825-1, ISP845-1

400

800

0.5mA I_F, 1.0V V_CE

1.0mA I_F, 1.0V V_CE

800

1.0mA I_F, 1.0V V_CE

Collector-emitterSaturationVoltage -3

1.0

V_RMS

Ω

0.25mAI_F,0.5mAI_C

0.5mAI_F,2mAI_C

1.0mAI_F,8mAI_C

See note 1

V_IO=500V(note1)

V_CE=2V,

-2

-1

Input to Output Isolation Voltage V_ISO

Input-output Isolation Resistance R_ISO5x10¹⁰

Output Rise Time tr

5300

300 µs

250 µs

Output Fall Time

I_C=10mA,R_L=100Ω

Note 1

Note 2

Measured with input leads shorted together and output leads shorted together.

Special Selections are available on request. Please consult the factory.

31/3/03

DB92442m-AAS/A6

Collector Power Dissipation vs. Ambient Temperature

Collector Current vs.

Collector-emitter Voltage

200

I_F= 1.0mA

150

100

T_A= 25°C

I_F= 0.5mA

I_F= 0.25mA

-30

100 125

Ambient temperature T_A( °C )

Collector-emitter voltage V_CE( V )

Forward Current vs. Ambient Temperature

Relative Current Transfer Ratio

vs. Ambient Temperature

1.5

I_F= 1mA

V_CE= 1V

1.0

0.5

-30

100 125

-30

100

Ambient temperature T_A( °C )

Current Transfer Ratio vs. Forward Current

1200

Collector-emitter Saturation

Voltage vs. Ambient Temperature

1.2

1.0

1000

I = 1mA

I^F_C= 8mA

800

600

400

0.8

0.6

0.4

= 1V

T_A^CE= 25 °C

0.2

200

-30

100

0.1

0.2

0.5

Forward current I_F(mA)

Ambient temperature T_A( °C )

DB92442m-AAS/A6

31/3/03

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