MCS2X [ISOCOM]

SCR Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6;
MCS2X
型号: MCS2X
厂家: ISOCOM COMPONENTS    ISOCOM COMPONENTS
描述:

SCR Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6

输出元件 光电
文件: 总4页 (文件大小:70K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MCS2400X  
MCS2400,MCS2  
PHOTON COUPLED ISOLATOR Ga As  
INFRARED EMITTING DIODE &  
LIGHT ACTIVATED SCR  
Dimensions in mm  
APPROVALS  
2.54  
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UL recognised, File No. E91231  
1
2
6
7.0  
6.0  
'X' SPECIFICATION APPROVALS  
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5
4
VDE 0884 in 2 available lead forms : -  
- STD  
- G form  
3
7.62  
max.  
8.3 max.  
5.1  
DESCRIPTION  
max.  
0.5  
min.  
The MCS2, MCS2400 are optically coupled  
isolators consisting of infrared light emitting  
diode and a light activated silicon controlled  
rectifier in a standard 6pin dual in line plastic  
package.  
3.9  
3.1  
15°  
Max  
0.25  
0.48  
ABSOLUTE MAXIMUM RATINGS  
(25°C unless otherwise specified)  
FEATURES  
Storage Temperature  
Operating Temperature  
Lead Soldering Temperature  
(1/16 inch (1.6mm) from case for 10 secs) 260°C  
-55°C to + 150°C  
-55°C to + 100°C  
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Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
High Isolation Voltage (5.3kVRMS ,7.5kVPK  
High Surge Anode Current (5.0 A)  
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INPUT DIODE  
High Blocking Voltage (200V*1, 400V*1)  
Low Turn on Current (5mA typical)  
All electrical parameters 100% tested  
Custom electrical selections available  
Forward Current  
60mA  
Forward Current (Peak)  
(1µs pulse, 300pps)  
Reverse Voltage  
3A  
6V  
Power Dissipation  
100mW  
APPLICATIONS  
DETECTOR  
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10A, T2L compatible, Solid State Relay  
25W Logic Indicator Lamp Driver  
400V Symmetrical transistor coupler  
Peak Forward Voltage  
MCS2  
200V*1  
400V*1  
6V  
MCS2400  
Peak Reverse Gate Voltage  
RMS On-state Current  
Peak On-state Current  
(100µs, 1% duty cycle)  
Surge Current (10ms)  
Power Dissipation  
300mA  
OPTION G  
8.3 max  
OPTION SM  
SURFACEMOUNT  
10A  
5A  
300mW  
1.2  
0.6  
1.4  
0.9  
0.26  
*1 IMPORTANT : A resistor must be connected  
between gate and cathode (pins 4 & 6) to prevent false  
firing (RGK < 56k)  
10.2  
9.5  
10.16  
ISOCOM INC  
1024 S.GreenvilleAve,Suite240,  
Allen, TX75002 USA  
Tel:(214)495-0755 Fax:(214)495-0901  
e-mail info@isocom.com  
ISOCOM COMPONENTS LTD  
Unit 25B, Park View Road West,  
Park View Industrial Estate, Brenda Road  
Hartlepool, Cleveland, TS25 1YD  
Tel: (01429) 863609 Fax :(01429) 863581  
http://www.isocom.com  
13/11/97  
DB92283-AAS/A3  
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
Reverse Voltage (VR)  
1.2  
1.5  
V
V
IF = 20mA  
IR = 10µA  
3
Output  
(note 2)  
Peak Off-state Voltage (VDM  
MCS2  
)
200  
400  
V
V
R =10kΩ,ID=150µA,  
TAG=K 100°C  
MCS2400  
R =10kΩ,ID=150µA,  
TAG=K 100°C  
Peak Reverse Voltage (VRM  
MCS2  
)
200  
400  
V
V
ID=150µA,TA=100°C  
ID=150µA,TA=100°C  
MCS2400  
On-state Voltage (VTM  
Off-state Current (IDM  
MCS2  
)
)
1.1  
1.3  
V
ITM = 100mA  
2
µA  
RGK=27kΩ, IF= 0,  
VDM = 200V  
MCS2400  
2
µA  
RGK=27kΩ, IF= 0,  
VDM = 400V  
Reverse Current (IR )  
MCS2  
2
2
µA  
µA  
IF= 0, VDM = 200V  
IF= 0, VDM = 400V  
RGK=27kΩ, VFX=50V  
VAK=100V, RGK=27kΩ  
MCS2400  
Holding Current (IH)  
10  
500 µA  
Coupled Input Current to Trigger ( IFT ) (note 2) 0.5  
Turn on Time ( ton )  
14  
mA  
50  
µs  
RGK=10kΩ, IF=30mΑ,  
VAK=50V, RL=200Ω  
Coupled dv/dt, Input to Output (dv/dt) 500  
Input to Output Isolation Voltage VISO 5300  
7500  
V/µs  
V
See note 1  
See note 1  
VRMS  
PK  
pF  
Input-output Isolation Resistance R  
1011  
V = 500V (note 1)  
Input-output Capacitance  
CIfSO  
2
VIO= 0, f =1MHz  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
13/11/97  
DB92283-AAS/A3  
Input Current to Trigger vs.  
Anode to Cathode Voltage  
Input Current to Trigger vs.  
Ambient Temperature  
100  
12  
10  
Normalized to  
VAK = 50V  
=10kΩ  
TAGK= 25 °C  
RGK =300Ω  
40  
20  
10  
R
1kΩ  
RGK =300Ω  
1kΩ  
4
2
4
2
10kΩ  
27kΩ  
1.0  
10kΩ  
27kΩ  
56kΩ  
1.0  
0.4  
0.4  
56kΩ  
Normalized to VAK = 50V,  
0.2  
0.1  
0.2  
0.1  
RGK =10kΩ, TA = 25 °C  
1
5
10  
50 100 200  
-60 -40 -20  
0
20 40 60 80 100 120  
Anode to cathode voltage VAK ( V )  
Ambient temperature TA ( °C )  
Input Current to Trigger Distribution  
vs. Ambient Temperature  
Input Current to Trigger vs.  
Pulse Width  
100  
10  
Normalized to  
VAK = 50V  
=10kΩ  
TAGK= 25 °C  
Normalized to  
RGK =300Ω  
V
= 50V  
40  
20  
RAK =10kΩ  
R
4
2
TAGK= 25 °C  
1kΩ  
10  
4
90th percentile  
10th percentile  
10kΩ  
27kΩ  
1
2
1
56kΩ  
0.4  
0.4  
0.2  
0.2  
0.1  
0.1  
-40 -20  
0
20 40 60 80 100  
1
2
4 6 10 20 40 60 100 200 400 1000  
Ambient temperature TA ( °C )  
Pulse width ( µs )  
Input Characteristics IF vs. VF  
Turn on Time vs. Input Current  
24  
22  
100  
VAK = 50V  
10kRGK=1kΩ  
t = td + tr  
40  
20  
tr o=n 1µs  
20  
18  
25°C  
10  
100°C  
-55°C  
16  
14  
4
2
1
12  
10  
8
6
4
56kΩ  
0.4  
0.2  
0.1  
2
0
0 10 20 30 40 50 60 70 80 90 100  
Input current IF (mA)  
0
0.5  
1
1.5  
2
2.5  
3
Forward voltage VF ( V )  
13/11/97  
DB92283-AAS/A3  
Holding Current vs. Ambient  
Temperature  
Maximum Transient Thermal Impedence  
10000  
1000  
1. Lead temperature measured at the  
widest portion of the SCR anode lead.  
2. Ambient temperature measured at  
a point 1/2" from the device.  
Normalized to  
VAK = 50V  
=10kΩ  
TAGK= 25 °C  
400  
200  
4000  
2000  
RGK =300Ω  
1kΩ  
R
Junction to ambient  
100  
1000  
40  
400  
200  
100  
10kΩ  
27kΩ  
20  
10  
4
40  
20  
10  
56kΩ  
2
1
-60 -40 -20  
0
20 40 60 80 100 120  
0.001 0.01  
0.1  
1 2 4 10  
100  
Ambient temperature TA ( °C )  
Time (seconds)  
Off State Forward Current vs.  
Ambient Temperature  
On State Current vs. Maximum  
Allowable Temperature  
10000  
4000  
2000  
1000  
100  
90  
1. Ambient temp. half-sine wave avg  
2. Ambient temp. DC current  
3. Anode lead temp. half-sine wave avg  
4. Anode lead temp. DC current  
Normalized to  
V
= 50V  
TAAK= 25 °C  
80  
70  
400  
200  
100  
60  
50  
VAK = 400V  
VAK = 200V  
40  
30  
20  
VAK = 50V  
40  
20  
10  
4
2
1
10  
0
1. 2.  
0.4  
3.  
4.  
0.8  
0
25  
50  
75  
100  
0
0.2  
0.6  
1.0  
Ambient temperature TA ( °C )  
On state current ( Α )  
On State Characteristics  
dV/dt vs. Ambient temperature  
2
1000  
400  
RGK =300Ω  
1
0.4  
0.2  
0.1  
100  
40  
1kΩ  
10kΩ  
27kΩ  
10  
4
0.04  
0.02  
0.01  
1
0.4  
Increases to forward  
breakover voltage  
56kΩ  
0.1  
25  
50  
75  
100  
0
1
2
3
4
Ambient temperature TA ( °C )  
On state voltage VT ( V )  
13/11/97  
DB92283-AAS/A3  

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