MCT6-SM [ISOCOM]

Transistor Output Optocoupler, 2-Element, 5300V Isolation, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC PACKAGE-8;


型号：	MCT6-SM
厂家：	ISOCOM COMPONENTS
描述：	Transistor Output Optocoupler, 2-Element, 5300V Isolation, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC PACKAGE-8
文件：	总3页 (文件大小：68K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCT6, MCT61, MCT62, MCT66

MCT6X, MCT61X, MCT62X, MCT66X

HIGH DENSITY

PHOTOTRANSISTOR OPTICALLY

COUPLED ISOLATORS

APPROVALS

Dimensions in mm

2.54

ULrecognised,FileNo.E91231

Package Code " FF "

7.0

6.0

'X'SPECIFICATIONAPPROVALS

1.2

3.0

VDE0884in3availableleadform:-

10.16

9.16

7.62

-STD

4.0

3.0

-Gform

-SMDapprovedtoCECC00802

13°

Max

0.5

DESCRIPTION

0.26

3.35

0.5

TheMCT6,MCT61,MCT62&MCT66series of

optically coupled isolators consist of infrared

light emitting diodes and NPN silicon photo

transistors in space efficient dual in line plastic

packages mounted two channels per unit.

ABSOLUTEMAXIMUMRATINGS

(25°Cunlessotherwisespecified)

Storage Temperature

OperatingTemperature

Lead SolderingTemperature

-40°Cto+125°C

-25°Cto+100°C

FEATURES

Options :-

10mm lead spread - add G after part no.

Surface mount - add SM after part no.

Tape&reel - add SMT&R after part no.

(1/16inch(1.6mm)fromcasefor10secs) 260°C

INPUTDIODE

HighIsolationVoltage(5.3kV_RMS

)

ForwardCurrent

ReverseVoltage

Power Dissipation

50mA

70mW

APPLICATIONS

Computerterminals

Industrial systems controllers

Measuring instruments

OUTPUTTRANSISTOR

Collector-emitterVoltageBV_CEO

Emitter-collectorVoltageBV_ECO

CollectorCurrent

30V

50mA

150mW

Signal transmission between systems of

different potentials and impedances

Power Dissipation

OPTION G

OPTION SM

SURFACEMOUNT

POWERDISSIPATION

7.62

Total Power Dissipation

170mW

(deratelinearly2.67mW/°Cabove25°C)

0.6

0.1

1.25

0.75

0.26

10.46

9.86

10.16

ISOCOMCOMPONENTS2004LTD

Unit25B, ParkViewRoadWest,

Park View Industrial Estate, Brenda Road

Hartlepool,Cleveland,TS251UD

Tel:(01429)863609 Fax:(01429)863581

17/7/08

DB92012

ELECTRICAL CHARACTERISTICS ( T_A= 25°C Unless otherwise noted )

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

ForwardVoltage(V_F)

1.5

I_F=20mA

ReverseCurrent(I_R)

μA

V_R=3V

Output

Collector-emitterBreakdown(BV_CEO

)

I_C= 1mA (note 2)

I_E=100μA

V_CE=10V

Emitter-collectorBreakdown(BV_ECO

)

Collector-emitterDarkCurrent(I_CEO

)

100 nA

Coupled CurrentTransferRatio(CTR)(Note2)

MCT6

MCT61

MCT62

100

10mAI_F,10VV_CE

5mAI_F,5VV_CE

5mA I_F, 5V V_CE

MCT66

10mAI_F,10VV_CE

Collector-emitterSaturationVoltageV_CESAT

MCT6,61,62

0.4

V_RMS

16mAI_F,2mAI_C

40mAI_F,2mAI_C

See note 1

MCT66

Input to Output Isolation Voltage V_ISO

5300

Input-output Isolation Resistance R_ISO5x10¹⁰

V_IO=500V(note1)

Output Rise Time, tr

OutputFallTime, tf

μs

I_C=2mA,V_CE=2V,

R_L=100Ω(Fig.1)

Note 1

Note 2

Measured with input leads shorted together and output leads shorted together.

Special Selections are available on request. Please consult the factory.

FIG. 1

INPUT

t_off

t_on

t_r

t_f

OUTPUT

10%

90%

10%

90%

DB92012m-AAS/A4

17/7/08

Collector Power Dissipation vs. Ambient Temperature

Collector Current vs. Collector-emitter Voltage

200

T_A= 25°C

150

100

I_F= 5mA

-30

100 125

Collector-emitter voltage V_CE( V )

Ambient temperature T_A( °C )

Forward Current vs. Ambient Temperature

Relative Current Transfer Ratio

vs. Forward Current

1.4

1.2

1.0

0.8

0.6

0.4

= 10V

T_A^CE= 25°C

0.2

-30

100 125

Forward current I_F(mA)

Ambient temperature T_A( °C )

Collector-emitter Saturation

Voltage vs. Ambient Temperature

Relative Current Transfer Ratio

vs. Ambient Temperature

0.28

1.5

1.0

0.24

0.20

I_F= 10mA

I = 16mA

I^F_C= 2mA

_CE= 10V

0.16

0.12

0.08

0.5

0.04

-30

100

-30

100

Ambient temperature T_A( °C )

DB92012m-AAS/A4

17/7/08

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