MOC8105SM [ISOCOM]

Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, SURFACE MOUNT PACKAGE-6;
MOC8105SM
型号: MOC8105SM
厂家: ISOCOM COMPONENTS    ISOCOM COMPONENTS
描述:

Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, SURFACE MOUNT PACKAGE-6

输出元件 光电
文件: 总3页 (文件大小:45K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MOC8101X,MOC8102X,MOC8103X,MOC8104X,MOC8105X  
MOC8101, MOC8102, MOC8103,MOC8104,MOC8105  
NON-BASE LEAD  
OPTICALLY COUPLED ISOLATOR  
PHOTOTRANSISTOR OUTPUT  
APPROVALS  
Dimensions in mm  
2.54  
l
UL recognised, File No. E91231  
'X' SPECIFICATION APPROVALS  
1
2
3
6
5
4
7.0  
6.0  
l
VDE 0884 in 3 available lead forms : -  
- STD  
- G form  
1.2  
3.0  
- SMD approved to CECC 00802  
Certified to EN60950 by the following  
Test Bodies :-  
l
7.62  
6.62  
7.62  
4.0  
3.0  
Nemko - Certificate No. P96101299  
Fimko - Registration No. 190469-01..22  
Semko - Reference No. 9620076 01  
Demko - Reference No. 305567  
13°  
Max  
0.5  
0.26  
3.35  
0.5  
DESCRIPTION  
TheMOC8101,MOC8102,MOC8103,MOC8104,  
MOC8105 series of optically coupled isolators  
consist of infrared light emitting diode and NPN  
silicon photo transistor in a standard 6 pin dual  
in line plastic package with the base pin  
unconnected.  
ABSOLUTE MAXIMUM RATINGS  
(25°C unless otherwise specified)  
Storage Temperature  
Operating Temperature  
-55°C to + 150°C  
-55°C to + 100°C  
Lead Soldering Temperature  
(1/16 inch (1.6mm) from case for 10 secs) 260°C  
FEATURES  
l
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
High Isolation Voltage (5.3kVRMS ,7.5kV  
INPUT DIODE  
Forward Current  
Reverse Voltage  
Power Dissipation  
60mA  
6V  
105mW  
l
l
)
Base pin unconnected for improved noPiKse  
immunity in high EMI environment  
APPLICATIONS  
l
l
l
DC motor controllers  
Industrial systems controllers  
Signal transmission between systems of  
different potentials and impedances  
OUTPUT TRANSISTOR  
Collector-emitter Voltage BVCEO  
Emitter-collector Voltage BVECO  
Power Dissipation  
30V  
6V  
160mW  
OPTION G  
OPTION SM  
SURFACEMOUNT  
7.62  
POWER DISSIPATION  
Total Power Dissipation  
(derate linearly 2.67mW/°C above 25°C)  
200mW  
0.6  
0.1  
1.25  
0.75  
0.26  
10.46  
9.86  
10.16  
ISOCOM INC  
1024 S.GreenvilleAve,Suite240,  
Allen, TX75002 USA  
Tel:(214)495-0755 Fax:(214)495-0901  
e-mail info@isocom.com  
ISOCOM COMPONENTS LTD  
Unit 25B, Park View Road West,  
Park View Industrial Estate, Brenda Road  
Hartlepool, Cleveland, TS25 1YD  
Tel: (01429) 863609 Fax :(01429) 863581  
http://www.isocom.com  
11/12/00  
DB92193m-AAS/A2  
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
ReverseVoltage(VR)  
Reverse Current (IR)  
1.0  
6
1.15 1.5  
10  
V
V
µA  
IF = 10mA  
IR =10µA  
VR =6V  
Output  
Collector-emitter Breakdown (BV  
)
30  
6
V
IC = 1mA  
( NoteCE2O )  
Emitter-collector Breakdown (BVECO  
Collector-emitter Dark Current (ICEO  
)
)
V
nA  
IE = 100µA  
VCE = 10V  
50  
Coupled Output Collector Current ( IC ) ( Note 3 )  
MOC8101  
MOC8102  
MOC8103  
5.0  
7.3  
10.8  
8.0  
11.7 mA  
17.3 mA  
mA  
10mA IF , 10V VCE  
10mA I , 10V VCE  
10mA IFF , 10V V  
CE  
MOC8104  
MOC8105  
Collector-emitterSaturationVoltageVCE(SAT)  
16  
6.5  
25.6 mA  
13.3 mA  
10mAIF,10VVCE  
10mAIF,10VVCE  
5mA IF , 0.5mAIC  
0.15 0.4  
V
Input to Output Isolation Voltage VISO  
5300  
7500  
VRMS  
VPK  
µs  
µs  
See note 1  
See note 1  
VIO=500V(note1)  
VCC =10V,  
IC =2mA, RL =100Ω  
Input-output Isolation Resistance RISO 5x1010  
Turn-onTimeton  
Turn-offTimetoff  
7.5  
5.7  
3.2  
4.7  
20  
20  
Output Rise Time tr  
µs  
µs  
Output Fall Time  
tf  
Note 1  
Note 2  
Note 3  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
Production testing - limits verified with pulse test  
11/12/00  
DB92193m-AAS/A2  
Collector Power Dissipation vs. Ambient Temperature  
Collector Current vs. Collector-emitter Voltage  
200  
TA = 25°C  
50  
50  
150  
100  
40  
30  
30  
20  
15  
20  
10  
50  
0
10  
IF = 5mA  
0
0
2
4
6
8
10  
-30  
0
25  
50  
75  
100 125  
Collector-emitter voltage VCE ( V )  
Ambient temperature TA ( °C )  
Forward Current vs. Ambient Temperature  
Current Transfer Ratio vs. Forward Current  
320  
280  
240  
80  
70  
V
= 10V  
TACE= 25°C  
60  
MOC8104  
200  
160  
50  
40  
MOC8103  
MOC8102  
30  
20  
120  
80  
40  
0
10  
0
MOC8101  
1
2
5
10  
20  
50  
-30  
0
25  
50  
75  
100 125  
Ambient temperature TA ( °C )  
Forward current IF (mA)  
Collector-emitter Saturation  
Voltage vs. Ambient Temperature  
Relative Current Transfer Ratio  
vs. Ambient Temperature  
0.28  
0.24  
1.5  
1.0  
IF = 10mA  
VCE = 10V  
I = 5mA  
ICF = 0.5mA  
0.20  
0.16  
0.12  
0.08  
0.5  
0
0.04  
0
-30  
0
25  
50  
75  
100  
-30  
0
25  
50  
75  
100  
Ambient temperature TA ( °C )  
Ambient temperature TA ( °C )  
11/12/00  
DB92193m-AAS/A2  

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