IS25WP256D-FHLA3 [ISSI]

SERIAL FLASH MEMORY WITH 166/133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE;
IS25WP256D-FHLA3
型号: IS25WP256D-FHLA3
厂家: INTEGRATED SILICON SOLUTION, INC    INTEGRATED SILICON SOLUTION, INC
描述:

SERIAL FLASH MEMORY WITH 166/133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE

文件: 总174页 (文件大小:2368K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IS25LP256D IS25WP256D  
256Mb  
SERIAL FLASH MEMORY WITH 166/133MHZ MULTI I/O SPI &  
QUAD I/O QPI DTR INTERFACE  
DATA SHEET  
IS25LP256D  
IS25WP256D  
256Mb  
SERIAL FLASH MEMORY WITH 166MHZ MULTI I/O SPI &  
QUAD I/O QPI DTR INTERFACE  
FEATURES  
Industry Standard Serial Interface  
Low Power with Wide Temp. Ranges  
- Single Voltage Supply  
- IS25LP256D: 256Mbit/32Mbyte  
- IS25WP256D: 256Mbit/32Mbyte  
- 3 or 4 Byte Addressing Mode  
- Supports Standard SPI, Fast, Dual, Dual  
I/O, Quad, Quad I/O, SPI DTR, Dual I/O  
DTR, Quad I/O DTR, and QPI  
- Software & Hardware Reset  
- Supports Serial Flash Discoverable  
Parameters (SFDP)  
IS25LP: 2.30V to 3.60V  
IS25WP: 1.65V to 1.95V  
- 7.5 mA Active Read Current  
- 10 µA Standby Current  
- 1 µA Deep Power Down  
- Temp Grades:  
Extended: -40°C to +105°C  
Auto Grade (A3): -40°C to +125°C  
Advanced Security Protection  
High Performance Serial Flash (SPI)  
- Software and Hardware Write Protection  
- Advanced Sector/Block Protection  
- Top/Bottom Block Protection  
- Power Supply Lock Protection  
- 4x256 Byte Dedicated Security Area  
with OTP User-lockable Bits  
- 80MHz Normal Read  
- Up to166Mhz Fast Read:  
-166MHz at Vcc=2.7V to 3.6V (1)  
-133MHz at Vcc=2.3V to 3.6V  
-133MHz at Vcc=1.65V to 1.95V (2)  
- Up to 80MHz DTR (Dual Transfer Rate)  
- Equivalent Throughput of 664 Mb/s  
- Selectable Dummy Cycles  
- 128 bit Unique ID for Each Device  
(Call Factory)  
Industry Standard Pin-out & Packages  
- Configurable Drive Strength  
- Supports SPI Modes 0 and 3  
- More than 100,000 Erase/Program Cycles  
- More than 20-year Data Retention  
- M =16-pin SOIC 300mil  
- L = 8-contact WSON 8x6mm  
- J = 8-contact WSON 8x6mm (3)  
- G = 24-ball TFBGA (4x6 ball array)  
- H = 24-ball TFBGA (5x5 ball array)  
- KGD (Call Factory)  
Flexible & Efficient Memory Architecture  
- Chip Erase with Uniform Sector/Block  
Erase (4/32/64 Kbyte)  
- Program 1 to 256 Byte per Page  
- Program/Erase Suspend & Resume  
Note:  
1. 166MHz at Mode 0 , and 133MHz at Mode 3  
2. 104MHz with 3-byte address (24-bit address) fast read  
operation  
3. Exposed Pad Size = 3.4mmx4.3mm instead of  
4.7mmx4.7mm  
Efficient Read and Program modes  
- Low Instruction Overhead Operations  
- Continuous Read 8/16/32/64 Byte  
Burst Wrap  
- Selectable Burst Length  
- QPI for Reduced Instruction Overhead  
- AutoBoot Operation  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
2
04/15/2019  
 
IS25LP256D  
IS25WP256D  
GENERAL DESCRIPTION  
The IS25LP256D and IS25WP256D Serial Flash memory offers a versatile storage solution with high flexibility  
and performance in a simplified pin count package. ISSI’s “Industry Standard Serial Interface” Flash is for systems  
that require limited space, a low pin count, and low power consumption. The device is accessed through a 4-wire  
SPI Interface consisting of a Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable  
(CE#) pins, which can also be configured to serve as multi-I/O (see pin descriptions).  
The device supports Dual and Quad I/O as well as standard, Dual Output, and Quad Output SPI. Clock frequencies  
of up to 166MHz allow for equivalent clock rates of up to 664MHz (166MHz x 4) which equates to 83Mbytes/s of  
data throughput. The IS25xP series of Flash adds support for DTR (Double Transfer Rate) commands that transfer  
addresses and read data on both edges of the clock. These transfer rates can outperform 16-bit Parallel Flash  
memories allowing for efficient memory access to support XIP (execute in place) operation.  
Initial state of the memory array is erased (all bits are set to 1) when shipped from the factory.  
QPI (Quad Peripheral Interface) supports 2-cycle instruction further reducing instruction times. Pages can be  
erased in groups of 4Kbyte sectors, 32Kbyte blocks, 64Kbyte blocks, and/or the entire chip. The uniform sector  
and block architecture allows for a high degree of flexibility so that the device can be utilized for a broad variety of  
applications requiring solid data retention.  
GLOSSARY  
Standard SPI  
In this operation, a 4-wire SPI Interface is utilized, consisting of Serial Data Input (SI), Serial Data Output (SO),  
Serial Clock (SCK), and Chip Enable (CE#) pins. Instructions are sent via the SI pin to encode instructions,  
addresses, or input data to the device on the rising edge of SCK. The SO pin is used to read data or to check the  
status of the device. This device supports SPI bus operation modes (0,0) and (1,1).  
Mutil I/O SPI  
Multi-I/O operation utilizes an enhanced SPI protocol to allow the device to function with Dual Output, Dual Input  
and Output, Quad Output, and Quad Input and Output capability. Executing these instructions through SPI mode  
will achieve double or quadruple the transfer bandwidth for READ and PROGRAM operations.  
Quad I/O QPI  
The device enables QPI protocol by issuing an “Enter QPI mode (35h)” command. The QPI mode uses four IO  
pins for input and output to decrease SPI instruction overhead and increase output bandwidth. SI and SO pins  
become bidirectional IO0 and IO1, and WP# and HOLD# pins become IO2 and IO3 respectively during QPI mode.  
Issuing an “Exit QPI (F5h) command will cause the device to exit QPI mode. Power Reset or Hardware/Software  
Reset can also return the device into the standard SPI mode.  
DTR  
In addition to SPI and QPI features, the device also supports Fast READ DTR operation. Fast READ DTR operation  
allows high data throughput while running at lower clock frequencies. Fast READ DTR operation uses both rising  
and falling edges of the clock for address inputs, and data outputs, resulting in reducing input and output cycles  
by half.  
Programmable drive strength and Selectable burst setting.  
The device offers programmable output drive strength and selectable burst (wrap) length features to increase the  
efficiency and performance of READ operation. The driver strength and burst setting features are controlled by  
setting the Read Registers. A total of six different drive strengths and four different burst sizes (8/16/32/64 Byte)  
are available for selection.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
3
04/15/2019  
 
IS25LP256D  
IS25WP256D  
TABLE OF CONTENTS  
FEATURES...........................................................................................................................................................2  
GENERAL DESCRIPTION ...................................................................................................................................3  
TABLE OF CONTENTS........................................................................................................................................4  
1. PIN CONFIGURATION..................................................................................................................................7  
2. PIN DESCRIPTIONS.....................................................................................................................................9  
3. BLOCK DIAGRAM.......................................................................................................................................11  
4. SPI MODES DESCRIPTION .......................................................................................................................12  
5. SYSTEM CONFIGURATION.......................................................................................................................14  
5.1 BLOCK/SECTOR ADDRESSES ...........................................................................................................14  
6. REGISTERS ................................................................................................................................................15  
6.1 STATUS REGISTER .............................................................................................................................15  
6.2 FUNCTION REGISTER.........................................................................................................................19  
6.3 READ REGISTER AND EXTENDED REGISTER.................................................................................20  
6.3.1 READ REGISTER .........................................................................................................................20  
6.3.2 EXTENDED READ REGISTER.....................................................................................................23  
6.4 AUTOBOOT REGISTER .......................................................................................................................25  
6.5 BANK ADDRESS REGISTER ...............................................................................................................26  
6.6 ADVANCED SECTOR/BLOCK PROTECTION (ASP) RELATED REGISTER.....................................27  
6.6.1 ADVANCED SECTOR/BLOCK PROTECTION REGISTER (ASPR)............................................27  
6.6.2 PASSWORD REGISTER ..............................................................................................................28  
6.6.3 PPB LOCK REGISTER .................................................................................................................28  
6.6.4 PPB REGISTER ............................................................................................................................29  
6.6.5 DYB REGISTER............................................................................................................................29  
7. PROTECTION MODE..................................................................................................................................30  
7.1 HARDWARE WRITE PROTECTION.....................................................................................................30  
7.2 SOFTWARE WRITE PROTECTION .....................................................................................................30  
7.2.1 BLOCK PROTECTION BITS.........................................................................................................30  
7.2.2 ADVANCED SECTOR/BLOCK PROTECTION (ASP) ..................................................................31  
8. DEVICE OPERATION .................................................................................................................................38  
8.1 COMMAND OVERVIEW .......................................................................................................................38  
8.2 COMMAND SET SUMMARY ................................................................................................................39  
8.3 NORMAL READ OPERATION (NORD, 03h or 4NORD, 13h)..............................................................48  
8.4 FAST READ OPERATION (FRD, 0Bh or 4FRD, 0Ch)..........................................................................51  
8.5 HOLD OPERATION...............................................................................................................................55  
8.6 FAST READ DUAL I/O OPERATION (FRDIO, BBh or 4FRDIO, BCh).................................................56  
8.7 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh or 4FRDO, 3Ch)..........................................60  
8.8 FAST READ QUAD OUTPUT OPERATION (FRQO, 6Bh or 4FRQO 6Ch) .........................................63  
8.9 FAST READ QUAD I/O OPERATION (FRQIO, EBh or 4FRQIO, ECh)................................................66  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
4
04/15/2019  
 
IS25LP256D  
IS25WP256D  
8.10 PAGE PROGRAM OPERATION (PP, 02h or 4PP, 12h).....................................................................73  
8.11 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h or 4PPQ, 34h/3Eh).........................76  
8.12 ERASE OPERATION ..........................................................................................................................77  
8.13 SECTOR ERASE OPERATION (SER, D7h/20h or 4SER, 21h).........................................................78  
8.14 BLOCK ERASE OPERATION (BER32K:52h or 4BER32K:5Ch, BER64K:D8h or 4BER64K:DCh)...80  
8.15 CHIP ERASE OPERATION (CER, C7h/60h)......................................................................................83  
8.16 WRITE ENABLE OPERATION (WREN, 06h) .....................................................................................84  
8.17 WRITE DISABLE OPERATION (WRDI, 04h)......................................................................................85  
8.18 READ STATUS REGISTER OPERATION (RDSR, 05h) ....................................................................86  
8.19 WRITE STATUS REGISTER OPERATION (WRSR, 01h)..................................................................87  
8.20 READ FUNCTION REGISTER OPERATION (RDFR, 48h)................................................................88  
8.21 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h)..............................................................89  
8.22 ENTER QUAD PERIPHERAL INTERFACE (QPI) MODE OPERATION (QPIEN, 35h; QPIDI, F5h).90  
8.23 PROGRAM/ERASE SUSPEND & RESUME.......................................................................................91  
8.24 ENTER DEEP POWER DOWN (DP, B9h)..........................................................................................94  
8.25 RELEASE DEEP POWER DOWN (RDPD, ABh)................................................................................95  
8.26 SET READ PARAMETERS OPERATION (SRPNV: 65h, SRPV: C0h/63h) .......................................96  
8.27 SET EXTENDED READ PARAMETERS OPERATION (SERPNV: 85h, SERPV: 83h) .....................98  
8.28 READ READ PARAMETERS OPERATION (RDRP, 61h)..................................................................99  
8.29 READ EXTENDED READ PARAMETERS OPERATION (RDERP, 81h).........................................100  
8.30 CLEAR EXTENDED READ REGISTER OPERATION (CLERP, 82h)..............................................101  
8.31 READ PRODUCT IDENTIFICATION (RDID, ABh) ...........................................................................102  
8.32 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh; RDJDIDQ, AFh)  
...................................................................................................................................................................104  
8.33 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h).......................105  
8.34 READ UNIQUE ID NUMBER (RDUID, 4Bh) .....................................................................................106  
8.35 READ SFDP OPERATION (RDSFDP, 5Ah) .....................................................................................107  
8.36 NO OPERATION (NOP, 00h)............................................................................................................107  
8.37 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)) AND HARDWARE  
RESET .......................................................................................................................................................108  
8.38 SECURITY INFORMATION ROW.....................................................................................................109  
8.39 INFORMATION ROW ERASE OPERATION (IRER, 64h) ................................................................110  
8.40 INFORMATION ROW PROGRAM OPERATION (IRP, 62h) ............................................................111  
8.41 INFORMATION ROW READ OPERATION (IRRD, 68h) ..................................................................112  
8.42 FAST READ DTR MODE OPERATION (FRDTR, 0Dh or 4FRDTR, 0Eh)........................................113  
8.43 FAST READ DUAL IO DTR MODE OPERATION (FRDDTR, BDh or 4FRDDTR, BEh) ..................118  
8.44 FAST READ QUAD I/O DTR MODE OPERATION IN SPI MODE (FRQDTR, EDh or 4FRQDTR,  
EEh) ...........................................................................................................................................................122  
8.45 SECTOR LOCK/UNLOCK FUNCTIONS...........................................................................................130  
8.46 AUTOBOOT.......................................................................................................................................133  
8.47 READ BANK ADDRESS REGISTER OPERATION (RDBR: 16h/C8h) ............................................137  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
5
04/15/2019  
IS25LP256D  
IS25WP256D  
8.48 WRITE BANK ADDRESS REGISTER OPERATION (WRBRNV: 18h, WRBRV: 17h/C5h) .............138  
8.49 ENTER 4-BYTE ADDRESS MODE OPERATION (EN4B, B7h) .......................................................139  
8.50 EXIT 4-BYTE ADDRESS MODE OPERATION (EX4B, 29h)............................................................140  
8.51 READ DYB OPERATION (RDDYB, FAh or 4RDDYB, E0h) .............................................................141  
8.52 WRITE DYB OPERATION (WRDYB, FBh or 4WRDYB, E1h)..........................................................143  
8.53 READ PPB OPERATION (RDPPB, FCh or 4RDPPB, E2h) .............................................................145  
8.54 PROGRAM PPB OPERATION (PGPPB, FDh or 4PGPPB, E3h).....................................................146  
8.55 ERASE PPB OPERATION (ERPPB, E4h) ........................................................................................148  
8.56 READ ASP OPERATION (RDASP, 2Bh) ..........................................................................................149  
8.57 PROGRAM ASP OPERATION (PGASP, 2Fh)..................................................................................150  
8.58 READ PPB LOCK BIT OPERATION (RDPLB, A7h).........................................................................151  
8.59 WRITE PPB LOCK BIT OPERATION (WRPLB, A6h).......................................................................152  
8.60 SET FREEZE BIT OPERATION (SFRZ, 91h)...................................................................................153  
8.61 READ PASSWORD OPERATION (RDPWD, E7h)...........................................................................154  
8.62 PROGRAM PASSWORD OPERATION (PGPWD, E8h) ..................................................................155  
8.63 UNLOCK PASSWORD OPERATION (UNPWD, E9h)......................................................................156  
8.64 GANG SECTOR/BLOCK LOCK OPERATION (GBLK, 7Eh) ............................................................157  
8.65 GANG SECTOR/BLOCK UNLOCK OPERATION (GBUN, 98h).......................................................158  
9. ELECTRICAL CHARACTERISTICS..........................................................................................................159  
9.1 ABSOLUTE MAXIMUM RATINGS (1) ..................................................................................................159  
9.2 OPERATING RANGE..........................................................................................................................159  
9.3 DC CHARACTERISTICS.....................................................................................................................160  
9.4 AC MEASUREMENT CONDITIONS ...................................................................................................161  
9.5 PIN CAPACITANCE ............................................................................................................................161  
9.6 AC CHARACTERISTIC .......................................................................................................................162  
9.7 SERIAL INPUT/OUTPUT TIMING.......................................................................................................164  
9.8 POWER-UP AND POWER-DOWN .....................................................................................................166  
9.9 PROGRAM/ERASE PERFORMANCE................................................................................................167  
9.10 RELIABILITY CHARACTERISTICS ..................................................................................................167  
10.  
PACKAGE TYPE INFORMATION........................................................................................................168  
10.1 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) PACKAGE 8x6mm (L)..............168  
10.2 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) PACKAGE 8x6mm (J)..............169  
10.3 16-LEAD PLASTIC SMALL OUTLINE PACKAGE (300 MILS BODY WIDTH) (M)...........................170  
10.4 24-BALL THIN PROFILE FINE PITCH BGA 6x8mm 4x6 BALL ARRAY (G)....................................171  
10.5 24-BALL THIN PROFILE FINE PITCH BGA 6x8mm 5x5 BALL ARRAY (H) ....................................172  
ORDERING INFORMATION Valid Part Numbers.............................................................................173  
11.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
6
04/15/2019  
IS25LP256D  
IS25WP256D  
1. PIN CONFIGURATION  
HOLD# (IO3)(1,2)  
HOLD# or RESET# (IO3)  
SCK  
16  
15  
14  
13  
12  
11  
10  
9
1
2
3
4
5
6
7
8
Vcc  
(3)  
SI (IO0)  
NC  
RESET#/NC  
Vcc  
8
CE#  
1
NC  
NC  
NC  
HOLD# or  
RESET# (IO3)(1)  
SO (IO1)  
2
7
6
5
NC  
NC  
SCK  
NC  
WP# (IO2)  
GND  
3
CE#  
GND  
WP# (IO2)  
4
SI (IO0)  
SO (IO1)  
8-contact WSON 8x6mm  
16-pin SOIC 300mil  
Top View, Balls Facing Down  
Top View, Balls Facing Down  
A1  
A2  
A3  
A4  
(3)  
A2  
A3  
A4  
A5  
NC  
NC  
NC  
RESET#(NC)  
(3)  
NC  
NC RESET#/(NC)  
NC  
B1  
B2  
B3  
B4  
B1  
B2  
B3  
B4  
B5  
NC  
SCK  
GND  
VCC  
NC  
SCK  
GND  
VCC  
NC  
C1  
C2  
C3  
C4  
C1  
C2  
C3  
C4  
C5  
NC  
CE#  
NC  
WP#(IO2)  
NC  
CE#  
NC  
WP#(IO2)  
NC  
D1  
D2  
D3  
D4  
HOLD# or (1,2)  
RESET# (IO3)  
D1  
D2  
D3  
D4  
D5  
NC  
SO(IO1)  
SI(IO0)  
(1,2)  
HOLD# or  
RESET# (IO3)  
NC  
SO(IO1)  
SI(IO0)  
NC  
E1  
E2  
E3  
E4  
E1  
E2  
E3  
E4  
E5  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
NC  
F1  
F2  
F3  
F4  
NC  
NC  
NC  
NC  
24-ball TFBGA, 4x6 Ball Array (Package:G)  
24-ball TFBGA, 5x5 Ball Array (Package:H)  
Notes:  
1. The pin can be configured as Hold# or Reset# by setting P7 bit of the Read Register. Pin default is Hold#.  
2. Dedicated RESET# pin is available in devices with a dedicated part number, in these devices Pin 1 (16-pin  
SOIC) or ball D4 (24-ball TFBGA) are set to Hold# regardless of P7 setting of the Read Register.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
7
04/15/2019  
IS25LP256D  
IS25WP256D  
3. For compatibility, the pin can be disabled on dedicated part numbers by setting Bit0 (Dedicated RESET#  
Disable) of the Function Register to “1” (default is “0” from factory on dedicated part numbers). An internal  
pull-up resistor exists and the pin may be left floating if not used.  
16-pin SOIC / 24-ball TFBGA  
Pin1 / Ball D4  
Device with HOLD#/RESET#  
Device with dedicated RESET#  
Hold#(IO3) or RESET#(IO3) by P7 bit setting  
Hold#(IO3) only regardless of P7 bit setting  
Pin3 / Ball A4  
NC  
J
RESET#  
R or P  
Part Number Option  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
8
04/15/2019  
IS25LP256D  
IS25WP256D  
2. PIN DESCRIPTIONS  
For the device with Hold#/RESET#  
SYMBOL  
TYPE  
DESCRIPTION  
Chip Enable: The Chip Enable (CE#) pin enables and disables the devices  
operation. When CE# is high the device is deselected and output pins are in a high  
impedance state. When deselected the devices non-critical internal circuitry power  
down to allow minimal levels of power consumption while in a standby state.  
When CE# is pulled low the device will be selected and brought out of standby mode.  
The device is considered active and instructions can be written to, data read, and  
written to the device. After power-up, CE# must transition from high to low before a  
new instruction will be accepted.  
CE#  
INPUT  
Keeping CE# in a high state deselects the device and switches it into its low power  
state. Data will not be accepted when CE# is high.  
Serial Data Input, Serial Output, and IOs (SI, SO, IO0, and IO1):  
This device supports standard SPI, Dual SPI, and Quad SPI operation. Standard SPI  
instructions use the unidirectional SI (Serial Input) pin to write instructions,  
addresses, or data to the device on the rising edge of the Serial Clock (SCK).  
Standard SPI also uses the unidirectional SO (Serial Output) to read data or status  
from the device on the falling edge of the serial clock (SCK).  
SI (IO0),  
SO (IO1)  
INPUT/  
OUTPUT  
In Dual and Quad SPI mode, SI and SO become bidirectional IO pins to write  
instructions, addresses or data to the device on the rising edge of the Serial Clock  
(SCK) and read data or status from the device on the falling edge of SCK. Quad SPI  
instructions use the WP# and HOLD# pins as IO2 and IO3 respectively.  
Write Protect/Serial Data IO (IO2): The WP# pin protects the Status Register from  
being written in conjunction with the SRWD bit. When the SRWD is set to “1” and the  
WP# is pulled low, the Status Register bits (SRWD, QE, BP3, BP2, BP1, BP0) are  
write-protected and vice-versa for WP# high. When the SRWD is set to “0”, the Status  
Register is not write-protected regardless of WP# state.  
INPUT/  
OUTPUT  
WP# (IO2)  
When the QE bit is set to “1”, the WP# pin (Write Protect) function is not available  
since this pin is used for IO2.  
HOLD# or RESET#/Serial Data IO (IO3): When the QE bit of Status Register is set  
to “1”, HOLD# pin or RESET# is not available since it becomes IO3. When QE=0 the  
pin acts as HOLD# or RESET# and either one can be selected by the P7 bit setting  
in Read Register. HOLD# will be selected if P7=0 (Default) and RESET# will be  
selected if P7=1.  
The HOLD# pin allows the device to be paused while it is selected. It pauses serial  
communication by the master device without resetting the serial sequence. The  
HOLD# pin is active low. When HOLD# is in a low state and CE# is low, the SO pin  
will be at high impedance. Device operation can resume when HOLD# pin is brought  
to a high state.  
HOLD# or  
RESET# (IO3)  
INPUT/  
OUTPUT  
RESET# pin is a hardware RESET signal. When RESET# is driven HIGH, the memory  
is in the normal operating mode. When RESET# is driven LOW, the memory enters  
reset mode and output is High-Z. If RESET# is driven LOW while an internal WRITE,  
PROGRAM, or ERASE operation is in progress, data may be lost.  
Serial Data Clock: Synchronized Clock for input and output timing operations.  
Power: Device Core Power Supply  
SCK  
Vcc  
INPUT  
POWER  
GROUND  
Unused  
Ground: Connect to ground when referenced to Vcc  
GND  
NC  
NC: Pins labeled “NC” stand for “No Connect” and should be left uncommitted.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
9
04/15/2019  
IS25LP256D  
IS25WP256D  
For the device with dedicated RESET#  
SYMBOL  
TYPE  
DESCRIPTION  
CE#  
INPUT  
Same as the description in previous page  
SI (IO0),  
SO (IO1)  
INPUT/  
OUTPUT  
Same as the description in previous page  
Same as the description in previous page  
INPUT/  
OUTPUT  
WP# (IO2)  
HOLD#/Serial Data IO (IO3): When the QE bit of Status Register is set to “1”, HOLD#  
pin is not available since it becomes IO3. When QE=0 the pin acts as HOLD#  
regardless of the P7 bit of Read Register.  
INPUT/  
OUTPUT  
The HOLD# pin allows the device to be paused while it is selected. It pauses serial  
communication by the master device without resetting the serial sequence. The  
HOLD# pin is active low. When HOLD# is in a low state and CE# is low, the SO pin  
will be at high impedance. Device operation can resume when HOLD# pin is brought  
to a high state.  
HOLD# (IO3)  
RESET#: This pin is available only for dedicated parts (Call Factory for 24-ball  
TFBGA 6x8mm packages).  
The RESET# pin is a hardware RESET signal. When RESET# is driven HIGH, the  
memory is in the normal operating mode. When RESET# is driven LOW, the memory  
enters reset mode and output is High-Z. If RESET# is driven LOW while an internal  
WRITE, PROGRAM, or ERASE operation is in progress, data may be lost.  
RESET#  
INPUT  
SCK  
Vcc  
INPUT  
POWER  
GROUND  
Unused  
Same as the description in previous page  
Same as the description in previous page  
Same as the description in previous page  
Same as the description in previous page  
GND  
NC  
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3. BLOCK DIAGRAM  
Control Logic  
High Voltage Generator  
Status  
Register  
I/O Buffers and  
Data Latches  
256 Bytes  
Page Buffer  
CE#  
SCK  
WP#  
(IO2)  
Y-Decoder  
SI  
(IO0)  
SO  
(IO1)  
HOLD# or RESET#(1)  
(IO3)  
Memory Array  
Address Latch &  
Counter  
Notes:  
1. According to the P7 bit setting in Read Register, either HOLD# (P7=0) or RESET# (P7=1) pin can be selected.  
2. SI and SO pins become bidirectional IO0 and IO1 respectively during Dual I/O mode and SI, SO, WP#, and  
HOLD#/RESET# pins become bidirectional IO0, IO1, IO2, and IO3 respectively during Quad I/O or QPI mode.  
3. In case of 16-pin SOIC and 24-ball TFBGA packages, dedicated RESET# function is supported without sharing with  
HOLD# pin for the dedicated parts. See the Ordering Information for the dedicated RESET# pin  
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4. SPI MODES DESCRIPTION  
Multiple IS25LP256D devices or multiple IS25WP256D devices can be connected on the SPI serial bus and  
controlled by a SPI Master, i.e. microcontroller, as shown in Figure 4.1. The devices support either of two SPI  
modes:  
Mode 0 (0, 0)  
Mode 3 (1, 1)  
The difference between these two modes is the clock polarity. When the SPI master is in stand-by mode, the serial  
clock remains at “0” (SCK = 0) for Mode 0 and the clock remains at “1” (SCK = 1) for Mode 3. Please refer to Figure  
4.2 and Figure 4.3 for SPI and QPI mode. In both modes, the input data is latched on the rising edge of Serial Clock  
(SCK), and the output data is available from the falling edge of SCK.  
Figure 4.1 Connection Diagram among SPI Master and SPI Slaves (Memory Devices)  
SDO  
SDI  
SPI interface with  
(0,0) or (1,1)  
SCK  
SCK SO SI  
SCK SO SI  
SCK SO SI  
SPI Master  
(i.e. Microcontroller)  
SPI  
SPI  
SPI  
Memory  
Device  
Memory  
Device  
Memory  
Device  
CS3  
CS2  
CS1  
CE#  
CE#  
CE#  
HOLD#  
or RESET#  
HOLD#  
WP#  
or RESET#  
WP#  
WP#  
HOLD#  
or RESET#  
Notes:  
1. According to the P7 bit setting in Read Register, either HOLD# (P7=0) or RESET# (P7=1) pin can be selected.  
2. SI and SO pins become bidirectional IO0 and IO1 respectively during Dual I/O mode and SI, SO, WP#, and  
HOLD#/RESET# pins become bidirectional IO0, IO1, IO2, and IO3 respectively during Quad I/O or QPI mode.  
3. In case of 16-pin SOIC and 24-ball TFBGA packages, dedicated RESET# function is supported without sharing with  
HOLD# pin for the dedicated parts. See the Ordering Information for the dedicated RESET# pin  
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Figure 4.2 SPI Mode Support  
SCK  
Mode 0 (0,0)  
SCK  
Mode 3 (1,1)  
MSB  
SI  
SO  
MSB  
Figure 4.3 QPI Mode Support  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
3-byte Address  
Mode Bits  
Data 1  
Data 2  
Data 3  
...  
...  
...  
...  
IO0  
IO1  
4
5
6
7
4
C4  
C5  
C6  
C0  
C1  
C2  
0
1
2
3
4
0
1
2
3
0
1
2
3
4
0
1
2
3
4
0
1
2
3
20  
21  
16  
17  
18  
19  
12  
13  
14  
15  
8
9
5
5
5
5
IO2  
IO3  
6
6
6
6
22  
10  
11  
71  
71  
231  
71  
71  
C71 C3  
Note1: MSB (Most Significant Bit)  
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5. SYSTEM CONFIGURATION  
The memory array is divided into uniform 4 Kbyte sectors or uniform 32/64 Kbyte blocks (a block consists of  
eight/sixteen adjacent sectors respectively).  
Table 5.1 illustrates the memory map of the device. The Status Register controls how the memory is protected.  
5.1 BLOCK/SECTOR ADDRESSES  
Table 5.1 Block/Sector Addresses  
Memory  
Density  
Block No.  
(64Kbyte)  
Block No.  
(32Kbyte)  
Sector Size  
(Kbyte)  
Sector No.  
Address Range  
Sector 0  
4
:
000000h - 000FFFh  
Block 0  
Block 1  
Block 2  
Block 3  
Block 4  
:
:
Block 0  
Block 1  
:
:
:
Sector 15  
4
4
:
00F000h - 00FFFFh  
Sector 16  
010000h - 010FFFh  
:
:
:
:
:
Sector 31  
4
4
:
01F000h - 01FFFFh  
Sector 32  
020000h - 020FFFh  
:
:
Block 2  
:
:
:
:
Block 5  
:
Sector 47  
4
02F000h - 02FFFFh  
:
:
:
Sector 4064  
4
:
FE0000h FE0FFFh  
Block 508  
:
:
Block 254  
:
:
:
Block 509  
Block 510  
Sector 4079  
4
4
:
FEF000h FEFFFFh  
Sector 4080  
FF0000h FF0FFFh  
:
:
Block 255  
:
:
:
:
Block 511  
:
Sector 4095  
4
FFF000h FFFFFFh  
:
:
:
Sector 8160  
4
:
1FE0000h 1FE0FFFh  
Block 1020  
:
:
Block 510  
:
:
:
Block 1021  
Block 1022  
Block 1023  
Sector 8175  
4
4
:
1FEF000h 1FEFFFFh  
Sector 8176  
1FF0000h 1FF0FFFh  
:
:
Block 511  
:
:
:
Sector 8191  
4
1FFF000h 1FFFFFFh  
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6. REGISTERS  
The device has various sets of Registers: Status, Function, Read, Extended Read and Autoboot.  
When the register is read continuously, the same data is output repeatedly until CE# goes HIGH.  
6.1 STATUS REGISTER  
Status Register Format and Status Register Bit Definitions are described in Tables 6.1 & 6.2.  
Table 6.1 Status Register Format  
Bit 7  
SRWD  
0
Bit 6  
QE  
0
Bit 5  
BP3  
0
Bit 4  
BP2  
0
Bit 3  
BP1  
0
Bit 2  
BP0  
0
Bit 1  
WEL  
0
Bit 0  
WIP  
0
Default  
Table 6.2 Status Register Bit Definition  
Read-  
/Write  
Bit  
Name  
Definition  
Type  
Write In Progress Bit:  
"0" indicates the device is ready (default)  
"1" indicates a write cycle is in progress and the device is busy  
Write Enable Latch:  
"0" indicates the device is not write enabled (default)  
"1" indicates the device is write enabled  
Bit 0  
WIP  
R
Volatile  
Volatile  
Bit 1  
WEL  
R/W1  
R/W  
Bit 2  
Bit 3  
Bit 4  
Bit 5  
BP0  
BP1  
BP2  
BP3  
Block Protection Bit: (See Tables 6.4 for details)  
"0" indicates the specific blocks are not write-protected (default)  
"1" indicates the specific blocks are write-protected  
Non-Volatile  
Quad Enable bit:  
Bit 6  
Bit 7  
QE  
“0” indicates the Quad output function disable (default)  
“1” indicates the Quad output function enable  
Status Register Write Disable: (See Table 7.1 for details)  
"0" indicates the Status Register is not write-protected (default)  
"1" indicates the Status Register is write-protected  
R/W  
R/W  
Non-Volatile  
Non-Volatile  
SRWD  
Note: WEL bit can be written by WREN and WRDI commands, but cannot by WRSR command.  
The BP0, BP1, BP2, BP3, QE, and SRWD are non-volatile memory cells that can be written by a Write Status  
Register (WRSR) instruction. The default value of the BP0, BP1, BP2, BP3, QE, and SRWD bits were set to “0” at  
factory. The Status Register can be read by the Read Status Register (RDSR).  
The function of Status Register bits are described as follows:  
WIP bit: Write In Progress (WIP) is read-only, and can be used to detect the progress or completion of a Program,  
Erase, Write/Set Non-Volatile/OTP Register, or Gang Sector/Block Lock/Unlock operation. WIP is set to “1” (busy  
state) when the device is executing the operation. During this time the device will ignore further instructions except  
for Read Status/Function/Extended Read Register and Software/Hardware Reset instructions. In addition to the  
instructions, an Erase/Program Suspend instruction also can be executed during a Program or Erase operation.  
When an operation has completed, WIP is cleared to “0” (ready state) whether the operation is successful or not  
and the device is ready for further instructions.  
WEL bit: Write Enable Latch (WEL) indicates the status of the internal write enable latch. When WEL is “0”, the  
internal write enable latch is disabled and the Write operations described in Table 6.3 are inhibited. When WEL is  
“1”, the Write operations are allowed. WEL is set by a Write Enable (WREN) instruction. Each Write Non-Volatile  
Register, Program and Erase instruction must be preceded by a WREN instruction. The volatile register related  
commands such as the Set Volatile Read Register, the Set Volatile Extended Read Register, the Write Volatile  
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Bank Address Register, and WRDYB don’t require to set WEL to “1". WEL can be reset by a Write Disable (WRDI)  
instruction. It will automatically reset after the completion of any Write operation.  
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Table 6.3 Instructions requiring WREN instruction ahead  
Instructions must be preceded by the WREN instruction  
Name  
Hex Code  
02h  
Operation  
Serial Input Page Program (3-byte or 4-byte Address)  
Serial Input Page Program (4-byte Address)  
Quad Input Page Program (3-byte or 4-byte Address)  
Quad Input Page Program (4-byte Address)  
Sector Erase 4KB (3-byte or 4-byte Address)  
Sector Erase 4KB (4-byte Address)  
Block Erase 32KB (3-byte or 4-byte Address)  
Block Erase 32KB (4-byte Address)  
Block Erase 64KB (3-byte or 4-byte Address)  
Block Erase 64KB (4-byte Address)  
Chip Erase  
PP  
4PP  
12h  
PPQ  
32h/38h  
34h/3Eh  
D7h/20h  
21h  
4PPQ  
SER  
4SER  
BER32 (32KB)  
4BER32 (32KB)  
BER64 (64KB)  
4BER64 (64KB)  
CER  
52h  
5Ch  
D8h  
DCh  
C7h/60h  
01h  
WRSR  
Write Status Register  
WRFR  
42h  
Write Function Register  
SRPNV  
SERPNV  
IRER  
65h  
Set Read Parameters (Non-Volatile)  
Set Extended Read Parameters (Non-Volatile)  
Erase Information Row  
85h  
64h  
IRP  
62h  
Program Information Row  
WRABR  
WRBRNV  
PGPPB  
4PGPPB  
ERPPB  
PGASP  
WRPLB  
SFRZ  
15h  
Write AutoBoot Register  
18h  
Write Non-Volatile Bank Address Register  
Write PPB (3-byte or 4-byte Address)  
Write PPB (4-byte Address)  
FDh  
E3h  
E4h  
Erase PPB  
2Fh  
Program ASP  
A6h  
Write PPB Lock Bit  
91h  
Set FREEZE bit  
PGPWD  
E8h  
Program Password  
BP3, BP2, BP1, BP0 bits: The Block Protection (BP3, BP2, BP1 and BP0) bits are used to define the portion of  
the memory area to be protected. Refer to Table 6.4 for the Block Write Protection (BP) bit settings. When a defined  
combination of BP3, BP2, BP1 and BP0 bits are set, the corresponding memory area is protected. Any program or  
erase operation to that area will be inhibited.  
Note: A Chip Erase (CER) instruction will be ignored unless all the Block Protection Bits are “0”s.  
SRWD bit: The Status Register Write Disable (SRWD) bit operates in conjunction with the Write Protection (WP#)  
signal to provide a Hardware Protection Mode. When the SRWD is set to “0”, the Status Register is not write-  
protected. When the SRWD is set to “1” and the WP# is pulled low (VIL), the bits of Status Register (SRWD, QE,  
BP3, BP2, BP1, BP0) become read-only, and a WRSR instruction will be ignored. If the SRWD is set to “1” and  
WP# is pulled high (VIH), the Status Register can be changed by a WRSR instruction.  
QE bit: The Quad Enable (QE) is a non-volatile bit in the Status Register that allows quad operation. When the QE  
bit is set to “0”, the pin WP# and HOLD#/RESET# are enabled. When the QE bit is set to “1”, the IO2 and IO3 pins  
are enabled.  
WARNING: The QE bit must be set to “0” if WP# or HOLD#/RESET# pin (or ball) is tied directly to the power supply.  
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Table 6.4 Block (64Kbyte) assignment by Block Write Protect (BP) Bits  
Status Register Bits Protected Memory Area (256M, 512Blocks)  
BP0 TBS(T/B selection) = 0, Top area TBS(T/B selection) = 1, Bottom area  
BP3  
0
BP2  
0
BP1  
0
0
1
0
1
0
1
0
1
0
1
x
x
0 ( None)  
0 ( None)  
0
0
0
1 (1 block: 511st)  
1 (1 block: 0th)  
0
0
1
2 (2 blocks: 510th and 511st)  
3 (4 blocks: 508th to 511st)  
4 (8 blocks: 504th to 511st)  
5 (16 blocks: 496th to 511st)  
6 (32 blocks: 480th to 511st)  
7 (64 blocks: 448th to 511st)  
8 (128 blocks: 384th to 511st)  
9 (256 blocks: 256th to 511st)  
10-11 (512 blocks: 0th to 511st) All blocks  
12-15 (512 blocks: 0th to 511st) All blocks  
2 (2 blocks: 0th and 1st)  
3 (4 blocks: 0th to 3rd)  
0
0
1
0
1
0
4 (8 blocks: 0th to 7th)  
0
1
0
5 (16 blocks: 0th to 15th)  
6 (32 blocks: 0th to 31st)  
7 (64 blocks: 0th to 63rd)  
8 (128 blocks: 0th to 127th)  
9 (256 blocks: 0th to 255th)  
10-11 (512 blocks: 0th to 511st) All blocks  
12-15 (512 blocks: 0th to 511st) All blocks  
0
1
1
0
1
1
1
0
0
1
0
0
1
0
1
1
1
x
Note: x is don’t care  
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6.2 FUNCTION REGISTER  
Function Register Format and Bit definition are described in Table 6.5 and Table 6.6.  
Table 6.5 Function Register Format  
Bit 7  
IRL3  
0
Bit 6  
IRL2  
0
Bit 5  
IRL1  
0
Bit 4  
IRL0  
0
Bit 3  
ESUS  
0
Bit 2  
PSUS  
0
Bit 1  
TBS  
0
Bit 0  
Dedicated  
RESET# Disable  
Default  
0 or 1  
Table 6.6 Function Register Bit Definition  
Read  
/Write  
Bit  
Name  
Definition  
Type  
Dedicated RESET# Disable bit  
Dedicated  
RESET# Disable  
R/W for 0  
R for 1  
Bit 0  
“0” indicates Dedicated RESET# was enabled  
“1” indicates Dedicated RESET# was disabled  
Top/Bottom Selection. (See Table 6.4 for details)  
“0” indicates Top area.  
“1” indicates Bottom area.  
Program suspend bit:  
“0” indicates program is not suspend  
“1” indicates program is suspend  
Erase suspend bit:  
OTP  
Bit 1  
Bit 2  
Bit 3  
Bit 4  
Bit 5  
Bit 6  
Bit 7  
TBS  
R/W  
R
OTP  
Volatile  
Volatile  
OTP  
PSUS  
ESUS  
"0" indicates Erase is not suspend  
"1" indicates Erase is suspend  
Lock the Information Row 0:  
“0” indicates the Information Row can be programmed  
“1” indicates the Information Row cannot be programmed  
R
IR Lock 0  
IR Lock 1  
IR Lock 2  
IR Lock 3  
R/W  
R/W  
R/W  
R/W  
Lock the Information Row 1:  
“0” indicates the Information Row can be programmed  
“1” indicates the Information Row cannot be programmed  
Lock the Information Row 2:  
“0” indicates the Information Row can be programmed  
“1” indicates the Information Row cannot be programmed  
Lock the Information Row 3:  
OTP  
OTP  
“0” indicates the Information Row can be programmed  
“1” indicates the Information Row cannot be programmed  
OTP  
Note: Once OTP bits of Function Register are written to “1”, it cannot be modified to “0” any more.  
Dedicated RESET# Disable bit: The default status of the bit is dependent on part number. The device with  
dedicated RESET# can be programmed to “1” to disable dedicated RESET# function to move RESET# function to  
Hold#/RESET# pin (or ball). So the device with dedicated RESET# can be used for dedicated RESET# application  
and HOLD#/RESET# application.  
TBS bit: BP0~3 area assignment can be changed from Top (default) to Bottom by setting TBS bit to “1”.  
However, once Bottom is selected, it cannot be changed back to Top since TBS bit is OTP. See Table 6.4 for  
details.  
PSUS bit: The Program Suspend Status bit indicates when a Program operation has been suspended. The PSUS  
changes to “1” after a suspend command is issued during the program operation. Once the suspended Program  
resumes, the PSUS bit is reset to “0”.  
ESUS bit: The Erase Suspend Status bit indicates when an Erase operation has been suspended. The ESUS bit  
is “1” after a suspend command is issued during an Erase operation. Once the suspended Erase resumes, the  
ESUS bit is reset to “0”.  
IR Lock bit 0 ~ 3: The default is “0” so that the Information Row can be programmed. If the bit is set to “1”, it cannot  
be changed back to “0” again since IR Lock bits are OTP.  
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6.3 READ REGISTER AND EXTENDED REGISTER  
Read Register format and bit definitions are described below. Read Register and Extended Read Register consist  
of a pair of rewritable non-volatile register and volatile register, respectively. During power up sequence, volatile  
register will be loaded with the value of non-volatile value.  
6.3.1 READ REGISTER  
Table 6.7 and Table 6.8 define all bits that control features in SPI/QPI modes. HOLD#/RESET# pin selection (P7)  
bit is used to select HOLD# pin or RESET# pin in SPI mode when QE=“0” for the device with HOLD#/RESET#.  
When QE=1 or in QPI mode, P7 bit setting will be ignored since the pin becomes IO3.  
For 16-pin SOIC or 24-ball TFBGA with dedicated RESET# device (Dedicated RESET# Disable bit in Functional  
Register is “0”), HOLD# will be selected regardless of P7 bit setting when QE=“0” in SPI mode.  
The SET READ PARAMETERS Operations (SRPNV: 65h, SRPV: C0h or 63h) are used to set all the Read Register  
bits, and can thereby define HOLD#/RESET# pin (or ball) selection, dummy cycles, and burst length with wrap  
around. SRPNV is used to set the non-volatile register and SRPV is used to set the volatile register.  
Table 6.7 Read Register Parameter Bit Table  
P7  
P6  
P5  
P4  
P3  
P2  
P1  
P0  
HOLD#/  
RESET#  
Dummy  
Cycles  
Dummy  
Cycles  
Dummy  
Cycles  
Dummy  
Cycles  
Wrap  
Enable  
Burst  
Length  
Burst  
Length  
Default  
0
0
0
0
0
0
0
0
Table 6.8 Read Register Bit Definition  
Read-  
/Write  
Bit  
P0  
P1  
Name  
Definition  
Type  
Non-Volatile  
and Volatile  
Non-Volatile  
and Volatile  
Burst Length  
Burst Length  
Burst Length  
Burst Length  
R/W  
R/W  
R/W  
Burst Length Set Enable Bit:  
"0" indicates disable (default)  
"1" indicates enable  
Burst Length  
Set Enable  
Non-Volatile  
and Volatile  
P2  
Non-Volatile  
and Volatile  
Non-Volatile  
and Volatile  
Non-Volatile  
and Volatile  
Non-Volatile  
and Volatile  
P3  
P4  
P5  
P6  
Dummy Cycles  
Dummy Cycles  
Dummy Cycles  
Dummy Cycles  
R/W  
R/W  
R/W  
R/W  
Number of Dummy Cycles:  
Bits1 to Bit4 can be toggled to select the number of dummy cycles  
(1 to 15 cycles)  
HOLD#/RESET# function selection Bit:  
"0" indicates the HOLD# function is selected (default)  
"1" indicates the RESET# function is selected  
HOLD#/  
RESET#  
Non-Volatile  
and Volatile  
P7  
R/W  
Table 6.9 Burst Length Data  
P1  
0
P0  
0
8 bytes  
16 bytes  
32 bytes  
64 bytes  
0
1
1
0
1
1
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Table 6.10 Wrap Function  
Wrap around boundary  
P2  
0
Whole array regardless of P1 and P0 value  
Burst Length set by P1 and P0  
1
Table 6.11 Read Dummy Cycles vs Max Frequency  
For IS25LP256D (3.0V) (6, 7)  
Fast Read  
Fast Read  
Quad  
Output  
Fast Read  
Dual IO  
BBh/BCh  
Fast Read  
Quad IO  
EBh/ECh  
Fast Read(5)  
0Bh/0Ch  
Dual  
Output  
3Bh/3Ch  
FRDTR  
0Dh/0Eh  
FRDDTR  
BDh/BEh  
FRQDTR  
EDh/EEh  
Dummy  
P[6:3]  
Cycles(2,3)  
6Bh/6Ch  
SPI  
QPI  
SPI  
SPI  
SPI  
SPI, QPI  
81MHz  
23MHz  
34MHz  
46MHz  
58MHz  
69MHz  
81MHz  
93MHz  
104MHz  
122MHz  
127MHz  
139MHz  
151MHz  
162MHz  
166MHz  
166MHz  
SPI/QPI  
SPI4  
SPI, QPI  
69MHz  
11MHz  
23MHz  
34MHz  
46MHz  
58MHz  
69MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
0
1
Default1  
166MHz  
98MHz  
81MHz  
23MHz  
34MHz  
46MHz  
58MHz  
69MHz  
81MHz  
93MHz  
104MHz  
122MHz  
127MHz  
139MHz  
151MHz  
162MHz  
166MHz  
166MHz  
166MHz  
75MHz  
104MHz  
52MHz  
145MHz  
63MHz  
80/69MHz  
50/11MHz  
63/23MHz  
75/34MHz  
80/46MHz  
80/58MHz  
80/69MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
60MHz  
29MHz  
40MHz  
52MHz  
60MHz  
75MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
1
2
2
110MHz  
122MHz  
133MHz  
145MHz  
156MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
84MHz  
80MHz  
75MHz  
3
3
98MHz  
98MHz  
87MHz  
4
4
133MHz  
140MHz  
150MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
104MHz  
122MHz  
133MHz  
145MHz  
156MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
98MHz  
5
5
110MHz  
122MHz  
133MHz  
145MHz  
156MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
166MHz  
6
6
7
7
8
8
9
9
10  
11  
12  
13  
14  
15  
10  
11  
12  
13  
14  
15  
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For IS25WP256D (1.8V) (8)  
Fast Read  
Quad  
Output  
Fast Read  
Dual Output  
3Bh/3Ch  
Fast Read  
Dual IO  
BBh/BCh  
Fast Read  
Quad IO  
EBh/ECh  
Fast Read(5)  
0Bh/0Ch  
FRDTR  
FRDDTR FRQDTR  
Dummy  
P[6:3]  
0Dh/0Eh BDh/BEh EDh/EEh  
Cycles(2, 3)  
6Bh/6Ch  
SPI  
QPI  
SPI  
SPI  
SPI  
SPI  
SPI/QPI  
SPI4  
SPI  
0
1
Default1  
133MHz  
98MHz  
81MHz  
23MHz  
34MHz  
46MHz  
58MHz  
69MHz  
81MHz  
93MHz  
133MHz  
75MHz  
104MHz  
52MHz  
133MHz  
63MHz  
81MHz  
23MHz  
34MHz  
46MHz  
58MHz  
69MHz  
81MHz  
93MHz  
104MHz  
122MHz  
127MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
80/69MHz  
50/11MHz  
63/23MHz  
75/34MHz  
80/46MHz  
80/58MHz  
80/69MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
80/80MHz  
60MHz  
29MHz  
40MHz  
52MHz  
60MHz  
75MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
69MHz  
11MHz  
23MHz  
34MHz  
46MHz  
58MHz  
69MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
80MHz  
1
2
2
110MHz  
122MHz  
133MHz  
133MHz  
133MHz  
133MHz  
84MHz  
80MHz  
75MHz  
3
3
98MHz  
98MHz  
87MHz  
4
4
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
104MHz  
122MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
98MHz  
5
5
110MHz  
122MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
133MHz  
6
6
7
7
8
8
133MHz 104MHz  
133MHz 122MHz  
133MHz 127MHz  
133MHz 133MHz  
133MHz 133MHz  
133MHz 133MHz  
133MHz 133MHz  
133MHz 133MHz  
9
9
10  
11  
12  
13  
14  
15  
10  
11  
12  
13  
14  
15  
Notes:  
1. Default dummy cycles are as follows.  
Command  
QPI mode  
Dummy Cycles  
Operation  
Comment  
SPI mode  
0Bh/0Ch  
3Bh/3Ch  
6Bh/6Ch  
BBh/BCh  
EBh/ECh  
0Dh/0Eh  
BDh/BEh  
EDh/EEh  
SPI mode  
QPI mode  
Fast Read  
0Bh/0Ch  
8
8
8
4
6
8
4
6
6
-
Fast Read Dual Output  
Fast Read Quad Output  
Fast Read Dual IO  
-
-
-
-
-
Fast Read Quad IO  
Fast Read DTR  
EBh/ECh(9)  
0Dh/0Eh  
-
6
6
-
Fast Read Dual IO DTR  
Fast Read Quad IO DTR  
EDh/EEh(9)  
6
2. Enough number of dummy cycles must be applied to execute properly the AX read operation.  
3. Must satisfy bus I/O contention. For instance, if the number of dummy cycles and AX bits cycles are same, then X  
must be Hi-Z.  
4. QPI mode is not available for FRDDTR command.  
5. RDUID, RDSFDP, IRRD instructions are also applied.  
6. Max frequency is 166MHz at Vcc=2.7V~3.6V, Mode 0  
7. Max frequency is 133MHz at Vcc=2.7V~3.6V, Mode 3 and 133MHz at Vcc=2.3V~3.6V at Mode 0  
8. Max frequency is 104MHz with 3-byte address (24-bit address) fast read operation.  
9. EBh/ECh command and EDh/EEh command are not supported in QPI mode for 1.8V device.  
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6.3.2 EXTENDED READ REGISTER  
Table 6.12 and Table 6.13 define all bits that control features in SPI/QPI modes. The ODS2, ODS1, ODS0 (EB7,  
EB6, EB5) bits provide a method to set and control driver strength. The four bits (EB3, EB2, EB1, EB0) are read-  
only bits and may be checked to know what the WIP status is or whether there is an error during an Erase, Program,  
or Write/Set Register operation. These bits are not affected by SERPNV or SERPV commands. EB4 bit remains  
reserved for future use.  
The SET EXTENDED READ PARAMETERS Operations (SERPNV: 85h, SERPV: 83h) are used to set all the  
Extended Read Register bits, and can thereby define the output driver strength used during READ modes. SRPNV  
is used to set the non-volatile register and SRPV is used to set the volatile register.  
Table 6.12 Extended Read Register Bit Table  
EB7  
ODS2  
1
EB6  
ODS1  
1
EB5  
ODS0  
1
EB4  
Reserved  
1
EB3  
Reserved  
-
EB2  
P_ERR  
0
EB1  
PROT_E  
0
EB0  
WIP  
0
Default  
Table 6.13 Extended Read Register Bit Definition  
Read-  
/Write  
Bit  
Name  
Definition  
Type  
Write In Progress Bit:  
EB0  
WIP  
Has exactly same function as the bit0 (WIP) of Status Register  
“0”: Ready, “1”: Busy  
Protection Error Bit:  
"0" indicates no error  
"1" indicates protection error in an Erase or a Program operation  
R
R
R
Volatile  
EB1  
EB2  
PROT_E  
P_ERR  
Volatile  
Volatile  
Program Error Bit:  
"0" indicates no error  
"1" indicates an Program operation failure or protection error  
EB3  
EB4  
Reserved  
Reserved  
Reserved  
Reserved  
R
R
Reserved  
Reserved  
Non-Volatile  
and Volatile  
Non-Volatile  
and Volatile  
Non-Volatile  
and Volatile  
EB5  
EB6  
EB7  
ODS0  
ODS1  
ODS2  
R/W  
R/W  
R/W  
Output Driver Strength:  
Output Drive Strength can be selected according to Table 6.14  
Table 6.14 Driver Strength Table  
ODS2  
ODS1  
ODS0  
Description  
Reserved  
12.50%  
25%  
Remark  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
37.50%  
Reserved  
75%  
100%  
50%  
Default  
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WIP bit: The definition of the WIP bit is exactly same as the one of Status Register.  
PROT_E bit: The Protection Error bit indicates whether an Erase or Program operation has attempted to modify a  
protected array sector or block, or to access a locked Information Row region. When the bit is set to “1” it indicates  
that there was an error or errors in previous Erase or Program operations. See Table 6.15 for details.  
P_ERR bit: The Program Error bit indicates whether a Program operation has succeeded or failed, or whether a  
Program operation has attempted to program a protected array sector/block or a locked Information Row region.  
When the bit is set to 1it indicates that there was an error or errors in previous Program or Write/Set Non-Volatile  
Register operations. See Table 6.15 for details.  
Table 6.15 Instructions to set PROT_E bit and P_ERR bit  
Instructions  
Description  
The commands will set the P_ERR if there is a failure in the operation. Attempting to program  
within the protected array sector/block or within an erase suspended sector/block will result in  
a programming error with P_ERR and PROT_E set to “1”.  
PP/4PP/PPQ/4PPQ/PGPPB/  
4PGPPB/PGPWD  
The command will set the P_ERR if there is a failure in the operation. In attempting to program  
IRP  
within a locked Information Row region, the operation will fail with P_ERR and PROT_E set to  
1.  
The command will set the P_ERR if there is a failure in the operation. Attempting to program  
ASPR[2:1] after the Protection Mode is selected or attempting to program ASPR[2:1] = 00b  
will result in a programming error with P_ERR and PROT_E set to “1”.  
PGASP  
UNPWD  
If the UNPWD command supplied password does not match the hidden internal password, the  
UNPWD operation fails in the same manner as a programming operation on a protected  
sector/block and sets the P_ERR and PROT_E to “1”.  
The update process for the non-volatile register bits involves an erase and a program operation  
on the non-volatile register bits. If either the erase or program portion of the update fails, the  
related error bit (P_ERR) will be set to “1”.  
Only for WRSR command, when Status Register is write-protected by SRWD bit and WP# pin,  
attempting to write the register will set PROT_E to “1”.  
WRSR/WRABR/SRPNV/  
SERPNV/WRBRNV  
WRFR  
The commands will set the P_ERR if there is a failure in the operation.  
PROT_E will be set to “1” when the user attempts to erase a protected main memory  
sector/block or a locked Information Row region. Chip Erase (CER) command will set PROT_E  
if any blocks are protected by Block Protection bits (BP3~BP0). But Chip Erase (CER)  
SER/4SER/BER32K/  
4BER32K/BER64K/  
4BER64K/CER/IRER/ERPPB command will not set PROT_E if sectors/blocks are protected by ASP (DYB bits or PPB bits)  
only.  
Notes:  
1. OTP bits in the Function Register and TBPARM (OTP bit) in the ASP Register may only be programmed to “1”.  
Writing of the bits back to “0” is ignored and no error is set.  
2. Read only bits and partially protected bits by FREEZE bit in registers are never modified by a command so that the  
corresponding bits in the Write/Set Register command data byte are ignored without setting any error indication.  
3. Once the PROT_E and P_ERR error bits are set to “1”, they remains set to “1” until they are cleared to “0” with a  
Clear Extended Read Register (CLERP) command. This means that those error bits must be cleared through the  
CLERP command. Alternatively, Hardware Reset, or Software Reset may be used to clear the bits.  
4. Any further command will be executed even though the error bits are set to “1”.  
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6.4 AUTOBOOT REGISTER  
AutoBoot Register Bit (32 bits) definitions are described in Table 6.16.  
Table 6.16 AutoBoot Register Parameter Bit Table  
Default  
Bits  
Symbols  
Function  
Type  
Description  
Value  
AutoBoot Start  
Address  
Non-  
Volatile  
32 byte boundary address for the start of boot code  
access  
AB[31:5]  
ABSA  
0000000h  
Number of initial delay cycles between CE# going  
low and the first bit of boot code being transferred,  
and it is the same as dummy cycles of FRD (QE=0)  
or FRQIO (QE=1).  
Example: The number of initial delay cycles is 8  
(QE=0) or 6 (QE=1) when AB[4:1]=0h (Default  
setting).  
AutoBoot Start  
Delay  
Non-  
Volatile  
AB[4:1]  
AB0  
ABSD  
ABE  
0h  
0
AutoBoot  
Enable  
Non-  
Volatile  
1 = AutoBoot is enabled  
0 = AutoBoot is not enabled  
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6.5 BANK ADDRESS REGISTER  
Related Commands: Read Volatile Bank Address Register (RDBR 16h/C8h), Write Volatile Bank Address Register  
(WRBRV 17h/C5h), Write Non-Volatile Bank Address Register (WRBRNV 18h), Enter 4-byte Address Mode (EN4B  
B7h), and Exit 4-byte Address Mode (EX4B 29h).  
Bank Address Register Bit (8 bits) definitions are described in Table 6.17 and Table 6.18.  
Table 6.17 Bank Address Register Bit Table  
BA7  
EXTADD  
0
BA6  
Reserved  
0
BA5  
Reserved  
0
BA4  
Reserved  
0
BA3  
Reserved  
0
BA2  
Reserved  
0
BA1  
Reserved  
0
BA0  
BA24  
0
Default  
Table 6.18 Bank Address Register Bit Definition  
Read-  
/Write  
Bit  
Name  
Definition  
Type  
Enables 128Mb segment selection in 3-byte addressing  
"0" indicates lower 128Mb segment is selected.  
"1" indicates upper 128Mb segment is selected.  
Non-Volatile  
and Volatile  
BA0  
BA24  
R/W  
BA1  
BA2  
BA3  
BA4  
BA5  
BA6  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
R
R
R
R
R
R
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
3-byte or 4-byte addressing selection Bit:  
"0" indicates 3-byte addressing.  
"1" indicates 4-byte addressing.  
Non-Volatile  
and Volatile  
BA7  
EXTADD  
R/W  
BA24: The Bank Address Register supplies additional high order bits of the main flash array byte boundary address  
for legacy commands that supply only the low order 24 bits of address. The Bank Address is used as the high bits  
of address (above A23) for all 3-byte address commands when EXTADD=0. The Bank Address is not used when  
EXTADD = 1 and traditional 3-byte address commands are instead required to provide all four bytes of address.  
EXTADD: Extended Address (EXTADD) controls the address field size for legacy SPI commands. When shipped  
from factory, it is cleared to “0” for 3 bytes (24 bits) of address. When set to 1, the legacy commands will require  
4 bytes (32 bits) for the address field.  
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6.6 ADVANCED SECTOR/BLOCK PROTECTION (ASP) RELATED REGISTER  
6.6.1 ADVANCED SECTOR/BLOCK PROTECTION REGISTER (ASPR)  
Related Commands: Read ASP (RDASP 2Bh) and Program ASP (PGASP 2Fh).  
Advanced Sector/Block Protection (ASP) Register Bit (16 bits) definitions are described in Tables 6.19 and 6.20.  
Table 6.19 Advanced Sector/Block Protection Register (ASPR) Bit Table  
15  
TBPARM  
1
7 to 14  
6
5
4
3
2
1
0
Reserve  
d
Reserve  
d
Reserve  
d
Reserve  
d
Reserve  
d
Reserve  
d
PWDMLB PSTMLB  
Default  
1
1
1
1
1
1
1
1
Table 6.20 Advanced Sector/Block Protection Register (ASPR) Bit Definition  
Read-  
/Write  
Bit  
Name  
Definition  
Type  
0
Reserved  
Reserved  
R
Reserved  
Persistent Protection Mode Lock Bit  
1
PSTMLB  
0= Persistent Protection Mode permanently enabled.  
1= Persistent Protection Mode not permanently enabled.  
Password Protection Mode Lock Bit  
R/W  
OTP  
2
PWDMLB  
Reserved  
TBPARM  
0= Password Protection Mode permanently enabled.  
1= Password Protection Mode not permanently enabled.  
R/W  
R
OTP  
Reserved  
OTP  
3:14  
15  
Reserved  
Configures Parameter Sectors location  
0= 4KB physical sectors at top, (high address)  
1= 4KB physical sectors at bottom (Low address)  
R/W  
The Advanced Sector/Block Protection Register (ASPR) is used to permanently configure the behavior of Advanced  
Sector/Block Protection (ASP) features and parameter sectors location.  
PWDMLB (ASPR[2]) and PSTMLB (ASPR[1]) bits: When shipped from the factory, all devices default ASP to the  
Persistent Protection Mode, with all sectors unprotected, when power is applied. The device programmer or host  
system must then choose which sector/block protection method to use. Programming either of the Protection Mode  
Lock Bits locks the part permanently in the selected mode:  
ASPR[2:1] = 11 = No ASP mode selected, Persistent Protection Mode is the default.  
ASPR[2:1] = 10 = Persistent Protection Mode permanently selected.  
ASPR[2:1] = 01 = Password Protection Mode permanently selected.  
ASPR[2:1] = 00 = Illegal condition, attempting to program both bits to zero results in a programming failure  
and the program operation will abort. It will result in a programming error with P_ERR set to 1.  
As a result, PWDMLB and PSTMLB are mutually exclusive, only one may be programmed to zero.  
ASPR programming rules:  
If the Password Protection Mode is chosen, the password must be programmed prior to setting the  
corresponding bit.  
Once the Protection Mode is selected, the ASPR[2:1] bits are permanently protected from programming and no  
further change to the ASPR[2:1] is allowed. Attempting to program ASPR[2:1] after selected will result in a  
programming error with P_ERR set to 1. The programming time of the ASPR is the same as the typical page  
programming time. The system can determine the status of the ASPR programming operation by reading the  
WIP bit in the Status Register or Extended Read Register.  
TBPARM bit can be programmed even after ASPR[2:1] bits are programmed while the FREEZE bit in the PPB  
Lock Register is “0”.  
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TBPARM bit: TBPARM defines the logical location of the parameter block. The parameter block consists of thirty-  
two 4KB sectors, which replace two 64KB blocks. When TBPARM is set to a 0the parameter block is in the top  
of the memory array address space. When TBPARM is set to a 1the parameter block is at the Bottom of the  
array. TBPARM is OTP and set to a 1when shipped from factory. If TBPARM is programmed to 0, an attempt  
to change it back to 1will fail and ignore the Program.  
The desired state of TBPARM must be selected during the initial configuration of the device during system  
manufacture; before the first program or erase operation on the main flash array. TBPARM must not be  
programmed after programming or erasing is done in the main flash array.  
TBS can be programmed independent of TBPARM. Therefore, the user can elect to store parameter information  
from the bottom of the array and protect boot code starting at the top of the array, and vice versa. Or the user can  
select to store and protect the parameter information starting from the top or bottom together.  
6.6.2 PASSWORD REGISTER  
Related Commands: Read Password (RDPWD E7h), Program Password (PGPWD E8h), and Unlock Password  
(UNPWD, E9h).  
Table 6.21 Password Register Bit Definition  
Read-  
Bit  
Name  
Definition  
Default  
Type  
/Write  
64 bit hidden password:  
The password is no longer readable after the password  
protection mode is selected by programming ASPR bit 2  
to zero.  
FFFFFFFF-  
FFFFFFFFh  
0:63  
PSWD  
R/W  
OTP  
6.6.3 PPB LOCK REGISTER  
Related Commands: Read PPB Lock Bit (RDPLB A7h), Write PPB Lock Bit (WRPLB A6h), and Set FREEZE Bit  
(SFRZ 91h).  
Table 6.22 PPB Lock Register Bit Definition  
Read-  
Bit  
Name  
Definition  
Default  
Type  
/Write  
PPB Lock bit: Protect PPB Array  
0= PPB array protected until next power cycle  
or Hardware Reset  
Persistent: 1  
Password: 0  
0
PPBLK  
R/W  
Volatile  
1= PPB array may be programmed or erased.  
1:6  
Reserved Reserved  
Reserved  
0
R
Reserved  
Lock current state of BP3-0 bits in Status Register, TBS in  
Function Register and TBPARM in ASPR, and  
Information Row (IR) regions.  
“1” = Locked  
7
FREEZE  
R/W  
Volatile  
“0” = Un-locked  
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PPBLK bit: The PPB Lock bit is a volatile bit for protecting all PPB bits. When cleared to 0, it locks all PPBs, when  
set to 1, it allows the PPBs to be changed. The WRPLB command is used to clear the PPB Lock bit to 0. The PPB  
Lock bit must be cleared to 0 only after all the PPBs are configured to the desired settings.  
In Persistent Protection mode, the PPB Lock bit is set to 1 during POR or Hardware Reset. When cleared to 0, no  
software command sequence can set the PPB Lock bit to 1, only another Hardware Reset or power-up can set the  
PPB Lock bit.  
In the Password Protection mode, the PPB Lock bit is cleared to 0 during POR or Hardware Reset. The PPB Lock  
bit can only be set to 1 by the Unlock Password command.  
FREEZE bit: FREEZE bit, when set to “1”, locks the current state of BP3-0 in Status Register, TBS in the Function  
Register, TBPARM in the Advanced Sector/Block Protection Register, and the Information Row. This prevents  
writing, programming, or erasing these areas. As long as FREEZE remains cleared to logic “0”, BP3-0 in Status  
Register, TBS in the Function Register, and TBPARM in the Advanced Sector/Block Protection Register are  
writable and the Information Row is programmable. Once FREEZE has been written to a logic “1” it can only be  
cleared to a logic “0” by a power-on cycle or a Hardware Reset. Software Reset will not affect the state of FREEZE.  
The FREEZE is volatile and the default state of FREEZE after power-on is “0”. The FREEZE can be set to “1” by a  
SFRZ command.  
6.6.4 PPB REGISTER  
Related Commands: Read PPB (RDPPB FCh or 4RDPPB E2h)), Program PPB (PGPPB FDh or 4PGPPB E3h),  
and Erase PPB (ERPPB E4h).  
Table 6.23 PPB Register Bit Definition  
Read-  
/Write  
Bit  
Name  
Definition  
Default  
Type  
Read or Program per sector/block PPB:  
00h = PPB for the sector/block addressed by the RDPPB or  
PGPPB command is programmed to 0, protecting  
that sector/block from program or erase operations.  
FFh = PPB for the sector/block addressed by the RDPPB  
or  
0:7  
PPB  
FFh  
R/W  
Non-Volatile  
PGPPB command is erased to 1, not protecting  
that sector/block from program or erase operations.  
6.6.5 DYB REGISTER  
Related Commands: Read DYB (RDDYB FAh or 4RDDYB E0h) and Write DYB (WRDYB FBh or 4WRDYB E1h).  
Table 6.24 DYB Register Bit Definition  
Read-  
/Write  
Bit  
Name  
Definition  
Default  
Type  
Read or Write per sector/block DYB:  
00h = DYB for the sector/block addressed by the RDDYB  
or  
WRDYB command is cleared to 0, protecting that  
sector/block from program or erase operations.  
FFh = DYB for the sector/block addressed by the RDDYB  
or  
0:7  
DYB  
FFh  
R/W  
Volatile  
WRDYB command is set to 1, not protecting that  
sector/block from program or erase operations.  
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7. PROTECTION MODE  
The device supports hardware and software write-protection mechanisms.  
7.1 HARDWARE WRITE PROTECTION  
The Write Protection (WP#) pin provides a hardware write protection method for BP3, BP2, BP1, BP0, SRWD, and  
QE in the Status Register. Refer to the section 6.1 STATUS REGISTER.  
Write inhibit voltage (VWI) is specified in the section 9.7 POWER-UP AND POWER-DOWN. All write sequence will  
be ignored when Vcc drops to VWI.  
Table 7.1 Hardware Write Protection on Status Register  
SRWD  
WP#  
Low  
Low  
High  
High  
Status Register  
Writable  
0
1
0
1
Protected  
Writable  
Writable  
Note: Before the execution of any program, erase or Write Status/Function Register instruction, the Write Enable Latch  
(WEL) bit must be enabled by executing a Write Enable (WREN) instruction. If the WEL bit is not enabled, the  
program, erase or write register instruction will be ignored.  
7.2 SOFTWARE WRITE PROTECTION  
The device also provides two kinds of software write protection feature. One is Block Protection by Block Protection  
bits (BP3, BP2, BP1, BP0) and another is Advanced Sector/Block Protection (ASP). When Block Protection is  
enabled (i.e., any BP3-0 are set to “1”), Advanced Sector/Block Protection (ASP) can still be used to protect  
sectors/blocks not protected by the Block Protection scheme. In the case that both ASP and Block Protection are  
used on the same sector/block the logical OR of ASP and Block Protection related to the sector/block is used.  
Warning: ASP and Block Protection should not be used concurrently. Use one or the other, but not both.  
7.2.1 BLOCK PROTECTION BITS  
The device provides a software write protection feature. The Block Protection bits (BP3, BP2, BP1, BP0) allow part  
or the whole memory area to be write-protected. For details, see 6.1 Status Register.  
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7.2.2 ADVANCED SECTOR/BLOCK PROTECTION (ASP)  
There are two ways to implement software Advanced Sector/Block Protection on this device: Password Protection  
method or Persistent Protection methods. Through these two protection methods, user can disable or enable the  
programming or erasing operation to any or all blocks including 32 top 4K sectors or 32 bottom 4K sectors. The  
Figure 7.1 shows an overview of these methods.  
Every main flash array block/top sector/bottom sector has a non-volatile (PPB) and a volatile (DYB) protection bit  
associated with it. When either bit is 0, the sector is protected from program and erase operations.  
The PPB bits are protected from program and erase when the PPB Lock bit is 0. The PPB bits are erased so that  
all main flash array sectors are unprotected when shipped from factory.  
There are two methods for managing the state of the PPB Lock bit, Persistent Protection and Password Protection.  
The Persistent Protection Mode sets the PPB Lock bit to 1during power up or Hardware Reset so that the PPB  
bits are unprotected. There is a WRPLB command to clear the PPB Lock bit to 0to protect the PPB bits. There  
is no command in the Persistent Protection method to set the PPB Lock bit therefore the PPB Lock bit will remain  
at 0until the next power up or Hardware Reset. The Persistent Protection method allows boot code the option of  
changing sector protection by programming or erasing the PPB, then protecting the PPB from further change for  
the remainder of normal system operation by clearing the PPB Lock bit. This is sometimes called Boot-code  
controlled sector protection.  
The Password Protection Mode requires use of a password to control PPB protection. In the Password Protection  
Mode, the PPB Lock bit is cleared to “0” during power up or Hardware Reset to protect the PPB bits. A 64-bit  
password may be permanently programmed and hidden for the Password Protection Mode. The UNPWD command  
can be used to provide a password for comparison with the hidden password. If the password matches the PPB  
Lock bit is set to “1” to unprotect the PPB. The WRPLB command can be used to clear the PPB Lock bit to “0”.  
After clearing the PPB Lock bit to “0”, the UNPWD command can be used again to unprotect the PPB.  
The selection of the PPB Lock bit management method is made by programming OTP bits in the ASP Register so  
as to permanently select the method used.  
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Figure 7.1 Advanced Sector/Block Protection  
ASP Register Bits (OTP)  
Password Protection  
Mode (ASPR[2]=0  
Persistent Protection  
Mode (ASPR[1]=0  
64-bit Password  
(OTP)  
PPB Lock Bit  
(Volatile)  
0 = Locked 1 = Unocked  
DYB  
Memory Array  
PPB  
1. The bit defaults to “1(Persistent Protection mode)  
or “0(Password Protection mode) upon reset.  
2. 0” locks all PPB bits to their current state.  
3. Password Protection mode requires a password to  
set PPB Lock bit to “1” to enable program or  
erase of PPB bits.  
4. Persistent Protection mode only allows PPB Lock  
bit to be cleared to “0” to prevent program or erase  
PPB bits. Power off or hardware reset is required to  
set PPB Lock bit to “1.  
DYB 0  
DYB 1  
DYB 2  
DYB 3  
Sector/Block 0  
Sector/Block 1  
Sector/Block 2  
Sector/Block 3  
PPB 0  
PPB 1  
PPB 2  
PPB 3  
DYB N-3  
DYB N-2  
DYB N-1  
DYB N  
Sector/Block N-3  
Sector/Block N-2  
Sector/Block N-1  
Sector/Block N  
PPB N-3  
PPB N-2  
PPB N-1  
PPB N  
1. 0 = Sector/Block Protected  
1. 0 = Sector/Block Protected  
1 = Sector/Block Unprotected  
2. PPB bits are programmed individually,  
but erased collectively  
1 = Sector/Block Unprotected (default)  
2. DYBs are volatile and defaults to “1”  
after power-up  
Note:  
1. 256M: N = 541 = 32 (32 Top 4K sectors or 32 Bottom 4K sectors) + 510 (510 64K blocks) - 1  
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Table 7.2 PPB/DYB and Sector/Block mapping (TBPARM = 1)  
Sector  
Size  
(Kbyte)  
Memory  
Density  
PPB  
Group  
DYB  
Group  
Block No.  
(64Kbyte)  
Sector No.  
Address Range  
PPB 0  
DYB 0  
Sector 0  
4
:
000000h - 000FFFh  
:
:
:
:
Block 0  
Block 1  
:
:
:
:
:
PPB 15  
DYB 15  
Sector 15  
4
4
:
00F000h - 00FFFFh  
PPB 16  
DYB 16  
Sector 16  
010000h - 010FFFh  
:
:
:
:
:
:
:
:
:
PPB 31  
DYB 31  
Sector 31  
4
4
:
01F000h - 01FFFFh  
Sector 32  
020000h - 020FFFh  
:
:
PPB 32  
:
DYB 32  
:
Block 2  
:
:
:
:
Sector 47  
4
02F000h - 02FFFFh  
:
:
:
Sector 4064  
4
:
FE0000h FE0FFFh  
:
:
PPB 284  
DYB 284  
Block 254  
:
:
:
Sector 4079  
4
4
:
FEF000h FEFFFFh  
Sector 4080  
FF0000h FF0FFFh  
:
:
PPB 285  
:
DYB 285  
:
Block 255  
:
:
:
:
Sector 4095  
4
FFF000h FFFFFFh  
:
:
:
Sector 8160  
4
:
1FE0000h 1FE0FFFh  
:
:
PPB 540  
DYB 540  
Block 510  
:
:
:
Sector 8175  
4
4
:
1FEF000h 1FEFFFFh  
Sector 8176  
1FF0000h 1FF0FFFh  
:
:
PPB 541  
DYB 541  
Block 511  
:
:
:
Sector 8191  
4
1FFF000h 1FFFFFFh  
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Table 7.3 PPB/DYB and Sector/Block mapping (TBPARM = 0)  
Sector  
Size  
(Kbyte)  
Memory  
Density  
PPB  
Group  
DYB  
Group  
Block No.  
(64Kbyte)  
Sector No.  
Address Range  
Sector 0  
4
:
000000h - 000FFFh  
:
:
PPB 0  
PPB 1  
DYB 0  
DYB 1  
Block 0  
Block 1  
:
:
:
Sector 15  
4
4
:
00F000h - 00FFFFh  
Sector 16  
010000h - 010FFFh  
:
:
:
:
:
Sector 31  
4
4
:
01F000h - 01FFFFh  
Sector 32  
020000h - 020FFFh  
:
:
PPB 2  
:
DYB 2  
:
Block 2  
:
:
:
:
Sector 47  
4
02F000h - 02FFFFh  
:
:
:
Sector 4064  
4
:
FE0000h FE0FFFh  
:
:
256Mb  
PPB 254  
DYB 254  
Block 254  
:
:
:
Sector 4079  
4
4
:
FEF000h FEFFFFh  
Sector 4080  
FF0000h FF0FFFh  
:
:
PPB 255  
:
DYB 255  
:
Block 255  
:
:
:
:
Sector 4095  
4
FFF000h FFFFFFh  
:
:
:
PPB 510  
DYB 510  
Sector 8160  
4
:
1FE0000h 1FE0FFFh  
:
:
:
:
Block 510  
:
:
:
:
:
PPB 525  
DYB 525  
Sector 8175  
4
4
:
1FEF000h 1FEFFFFh  
PPB 525  
DYB 526  
Sector 8176  
1FF0000h 1FF0FFFh  
:
:
:
:
Block 511  
:
:
:
:
:
PPB 541  
DYB 541  
Sector 8191  
4
1FFF000h 1FFFFFFh  
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Persistent Protection Bits (PPBs)  
The Persistent Protection Bits (PPBs) are unique for each sector/block and non-volatile (refer to Figure 7.1, Table  
7.2, and Table 7.3). It is programmed individually but must be erased as a group, similar to the way individual words  
may be programmed in the main array but an entire sector/block must be erased at the same time. The PPBs have  
the same endurances as the Flash memory. Preprogramming and verification prior to erasure are handled by the  
device, and therefore do not require system monitoring. Programming a PPB bit requires the typical page  
programming time. Erasing all the PPBs requires typical sector erase time. During PPB bit programming and PPB  
bit erasing, status is available by reading the Status Register or Extended Read Register. Reading of a PPB bit  
requires the initial access time of the device.  
Notes:  
1. Each PPB is individually programmed to “0” and all are erased to “1” in parallel.  
2. The PPB Lock bit must be cleared first before changing the status of a PPB.  
3. While programming PPB, array data cannot be read from any sectors/blocks.  
4. When reading the PPB of the desired sector/block the address should be location zero within the sector/block. The high  
order address bits not used must be zero.  
5. There are no means for individually erasing a specific PPB and no specific sector/block address is required for this operation.  
6. The state of the PPB for a given sector/block can be verified by using a PPB Read command.  
7. When the parts are first shipped, the PPBs are cleared (erased to “1”).  
Dynamic Protection Bits (DYBs)  
Dynamic Protection Bits (DYBs) are volatile and unique for each sector/block and can be individually modified.  
DYBs only control the protection for unprotected sectors/blocks that have their PPBs cleared (erased to “1”). By  
issuing the Write DYB command, the DYBs are cleared to “0” or set to “1”, thus placing each sector/block in the  
protected or unprotected state respectively. This feature allows software to easily protect sectors/blocks against  
inadvertent changes, yet does not prevent the easy removal of protection when changes are needed. The DYBs  
can be set or cleared as often as needed as they are volatile bits.  
Persistent Protection Bit (PPB) Lock Bit  
The PPB Lock bit is a volatile bit for protecting all PPB bits. When cleared to “0”, it locks all PPBs and when set to  
“1”, it allows the PPBs to be changed. . If the PPB Lock bit is “0”, the PPB Program or Erase command does not  
execute and fails without programming or erasing the PPB.  
In Persistent Protection mode, the PPB Lock bit is set to “1” during power up or Hardware Reset. When cleared to  
“0”, no software command sequence can set the PPB Lock bit to “1”, only another Hardware Reset or power-up  
can set the PPB Lock bit.  
In the Password Protection mode, the PPB Lock bit is cleared to “0” during power up or a Hardware Reset during  
power up or a Hardware Reset during power up or a Hardware Reset. The PPB Lock bit can only be set to “1” by  
the Password Unlock command.  
The PPB Lock bit must be cleared to “0” only after all PPBs are configured to the desired settings.  
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Sector/Block Protection States Summary  
Each sector in specific blocks and each of all other blocks except for the specific blocks can be in one of the  
following protection states:  
Unlocked The sector/block is unprotected and protection can be changed by a simple command. The  
protection state defaults to unprotected after a power cycle, software reset, or hardware reset.  
Dynamically Locked A sector/block is protected and protection can be changed by a simple command. The  
protection state is not saved across a power cycle.  
Persistently Locked A sector/block is protected and protection can only be changed if the PPB Lock bit is set  
to 1. The protection state is non-volatile and saved across a power cycle or reset. Changing the protection  
state requires programming and or erase of the PPB bits.  
Table 7.4 contains all possible combinations of the DYB, PPB, and PPB Lock bit relating to the status of the  
sector/block. In summary, if the PPB Lock bit is locked (cleared to “0”), no changes to the PPBs are allowed. The  
PPB Lock bit can only be unlocked (set to “1”) through a Hardware Reset or power cycle.  
Table 7.4 Sector/Block Protection States  
Protection Bit values  
Assigned Sector/Block State  
PPB  
DYB  
1
1
Unprotected  
Protected  
Protected  
Protected  
0= Locked or Protected  
1= Unlocked or Unprotected  
1
0
0
0
1
0
1
Changeable  
NOT changeable  
Changeable  
Changeable  
PPB Lock Bit  
0
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Persistent Protection Mode  
The Persistent Protection Mode sets the PPB Lock bit to 1during power up or Hardware Reset so that the PPB  
bits are unprotected by a device Hardware Reset. Software Reset does not affect the PPB Lock bit. The WRPLB  
command can clear the PPB Lock bit to 0to protect the PPB. There is no command to set the PPB Lock bit  
therefore the PPB Lock bit will remain at 0until the next power up or Hardware Reset.  
Password Protection Mode  
The Password Protection Mode allows an even higher level of security than the Persistent Protection Mode by  
requiring a 64-bit password for unlocking the device PPB Lock bit. In addition to this password requirement, after  
power up or Hardware Reset, the PPB Lock bit is cleared to “0” to maintain the password mode of operation.  
Successful execution of the Unlock Password command by entering the entire password sets the PPB Lock bit to  
“1”, allowing for sector/block PPBs modifications.  
Notes:  
1. The password is all “1”s when shipped from Factory. It is located in its own memory space and is accessible through the use  
of the Program Password and Read Password commands.  
2. Once the Password is programmed and verified, the Password Protection Mode Lock Bit (ASPR[2]=0) in ASP Register must  
be programmed in order to prevent reading or modifying the password. After the Password Protection Mode Lock Bit is  
programmed, all further Program and Read commands to the password region are disabled and these commands are  
ignored so that there is no means to verify what the password is. Password verification is only allowed before selecting the  
Password Protection Mode.  
3. The Program Password Command is only capable of programming 0s. Programming a 1after a cell is programmed as a  
0results in the cell left as a 0with no programming error.  
4. All 64-bit password combinations are valid as a password.  
5. The Protection Mode Lock Bits in ASP Register are not erasable because they are OTP.  
6. The exact password must be entered in order for the unlocking function to occur. If the password provided by Unlock  
Password command does not match the hidden internal password, the unlock operation fails in the same manner as a  
programming operation on a protected sector/block. The P_ERR and PROT_E are set to 1 and the PPB Lock bit remains  
cleared to 0. In this case it is a failure to change the state of the PPB Lock bit because it is still protected by the lack of a  
valid password.  
7. The Unlock Password command cannot be accepted any faster than once every 100μs ± 20μs. This makes it take an  
unreasonably long time (58 million years) for a hacker to run through all the 64-bit combinations in an attempt to correctly  
match a password. The Read Status Register command or the Read Extended Read Register may be used to read the WIP  
bit to determine when the device has completed the Unlock Password command or is ready to accept a new password  
command. When a valid password is provided the Unlock Password command does not insert the 100μs delay before  
returning the WIP bit to zero.  
8. If the password is lost after selecting the Password Protection Mode, there is no way to set the PPB Lock bit.  
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8. DEVICE OPERATION  
8.1 COMMAND OVERVIEW  
The device utilizes an 8-bit instruction register. Refer to Table 8.4. Instruction Set for details on instructions and  
instruction codes. All instructions, addresses, and data are shifted in with the most significant bit (MSB) first on  
Serial Data Input (SI) or Serial Data IOs (IO0, IO1, IO2, IO3). The input data on SI or IOs is latched on the rising  
edge of Serial Clock (SCK) for normal mode and both of rising and falling edges for DTR mode after Chip Enable  
(CE#) is driven low (VIL). Every instruction sequence starts with a one-byte instruction code and is followed by  
address bytes and/or dummy cycles (configurable) and/or data bytes, depending on the type of instruction. CE#  
must be driven high (VIH) after the last bit of the instruction sequence has been shifted in to end the operation.  
Commands are structured as follows:  
Each command begins with a byte (eight bits) instruction.  
The instruction may be stand alone or may be followed by address bits to select a location within one of several  
address spaces in the device. The address may be either a 24-bit or 32-bit byte boundary address.  
The SPI interface with Multiple IO provides the option for each transfer of address and data information to be  
done one, two, or four bits in parallel. This enables a tradeoff between the number of signal connections (IO bus  
width) and the speed of information transfer. If the host system can support a two or four bit wide IO bus the  
memory performance can be increased by using the instructions that provide parallel two bit (dual) or parallel  
four bit (quad) transfers.  
The width of all transfers following the instruction are determined by the instruction sent.  
All single bit or parallel bit groups are transferred in most to least significant bit order.  
Some instructions send Mode Bits following the address to indicate that the next command will be of the same  
type with an implied, rather than an explicit, instruction. The next command thus does not provide an instruction  
byte, only a new address and mode bits. This reduces the time needed to send each command when the same  
command type is repeated in a sequence of commands.  
The address or Mode Bits may be followed by Dummy Cycles before read data is returned to the host.  
Dummy Cycles may be zero to several SCK cycles. In fact, Mode Bits will be counted as a part of Dummy  
Cycles.  
All instruction, address, Mode, and data information is transferred in byte granularity. Addresses are shifted into  
the device with the Most Significant Byte first. All data is transferred with the lowest address byte sent first.  
Following bytes of data are sent in lowest to highest byte address order i.e. the byte address increments.  
All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations)  
are ignored. The embedded operation will continue to execute without any affect. A very limited set of commands  
are accepted during an embedded operation. These are discussed in the individual command descriptions.  
While a program, erase, or write operation is in progress, it is recommended to check that the Write In Progress  
(WIP) bit is 0before issuing most commands to the device, to ensure the new command can be accepted.  
Depending on the command, the time for execution varies. A command to read status information from an  
executing command is available to determine when the command completes execution and whether the  
command was successful.  
Following are some general signal relationship descriptions to keep in mind.  
The host always controls the Chip Enable (CE#), Serial Clock (SCK), and Serial Input (SI) - SI for single bit  
wide transfers. The memory drives Serial Output (SO) for single bit read transfers. The host and memory  
alternately drive the IO0-IO3 signals during Dual and Quad transfers.  
All commands begin with the host selecting the memory by driving CE# low before the first rising edge of  
SCK. CE# is kept low throughout a command and when CE# is returned high the command ends.  
Generally, CE# remains low for 8-bit transfer multiples to transfer byte granularity information. All commands  
will not be accepted if CE# is returned high not at an 8-bit boundary.  
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8.2 COMMAND SET SUMMARY  
Extended Addressing  
To accommodate addressing above 128Mb (24-bit), there are three options:  
1. New instructions with 4-byte (32-bit) address. See Table 8.2.  
2. 4-byte addressing with the 3-byte address instructions:  
For backward compatibility to the 3-byte address instructions, the standard instructions can be used in  
conjunction with the EXTADD Bit in the Bank Address Register (BAR[7]) or Enter 4-byte Address Mode to switch  
from 3 bytes to 4 bytes of address field. When EXTADD bit is set to 1 or Enter 4-byte Address Mode command  
is issued only in the case that EXTADD bit = 0, the instructions are changed to require 4-byte (32-bit) for the  
address field. See Table 8.3.  
3. 3-byte addressing with the 3-byte address instructions:  
For backward compatibility to the 3-byte addressing, the standard instructions can be used in conjunction with  
the Bank Address Register. See Table 8.3.  
The Bank Address Register is used to switch between 128Mbit (16Mbyte) banks of memory, the standard 3-  
byte address selects an address within the bank selected by the Bank Address Register.  
o The host system writes the Bank Address Register to access beyond the first 128Mbit of memory.  
o This applies to read, erase, and program commands.  
The Bank Address Register provides the high order (4th) byte of address, which is used to address the  
available memory at addresses greater than 128Mbit.  
Bank Address Register bits are volatile.  
o On power up, the default is Bank0 (the lowest address 16 Mbytes).  
For Read, the device will continuously transfer out data until the end of the array.  
o There is no bank to bank delay.  
o The Bank Address Register is not updated.  
o The Bank Address Register value is used only for the initial address of an access.  
Table 8.1 Bank Address Map  
Bank Address Register Bit 0  
Bank  
Memory Array Address Range  
0
1
0
1
00000000h  
01000000h  
00FFFFFFh  
01FFFFFFh  
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Table 8.2 New Instruction Set with 4-byte address  
Instruction Name  
Operation  
Code  
Address Mode  
4NORD  
4FRD  
4-byte Address Normal Read Mode  
4-byte Address Fast Read Mode  
4-byte Address Fast Read Dual I/O  
4-byte Address Fast Read Dual Output  
4-byte Address Fast Read Quad I/O  
4-byte Address Fast Read Quad Output  
4-byte Address Fast Read DTR Mode  
4-byte Address Fast Read Dual I/O DTR  
4-byte Address Fast Read Quad I/O DTR  
4-byte Address Serial Input Page Program  
4-byte Address Quad Input Page Program  
4-byte Address Sector Erase  
13h  
0Ch  
BCh  
3Ch  
ECh  
6Ch  
0Eh  
BEh  
EEh  
12h  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4FRDIO  
4FRDO  
4FRQIO  
4FRQO  
4FRDTR  
4FRDDTR  
4FRQDTR  
4PP  
4PPQ  
34h/3Eh  
21h  
4SER  
4BER32 (32KB)  
4BER64 (64KB)  
4SECUNLOCK  
4RDDYB  
4WRDYB  
4RDPPB  
4PGPPB  
4-byte Address Block Erase 32KB  
4-byte Address Block Erase 64KB  
4-byte Address Sector Unlock  
5Ch  
DCh  
25h  
4-byte Address Read DYB  
E0  
4-byte Address Write DYB  
E1  
4-byte Address Read PPB  
E2  
4-byte Address Program PPB  
E3  
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Table 8.3 Instruction Set with 3-byte or 4-byte address according to EXTADD Bit setting  
Address Mode  
EXTADD (BAR[7] = 1  
Instruction Name  
Operation  
Code  
EXTADD (BAR[7]) = 0  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
3-byte Address  
NORD  
FRD  
Normal Read Mode  
Fast Read Mode  
03h  
0Bh  
BBh  
3Bh  
EBh  
6Bh  
0Dh  
BDh  
EDh  
02h  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
4-byte Address  
FRDIO  
Fast Read Dual I/O  
Fast Read Dual Output  
Fast Read Quad I/O  
Fast Read Quad Output  
Fast Read DTR Mode  
Fast Read Dual I/O DTR  
Fast Read Quad I/O DTR  
Serial Input Page Program  
Quad Input Page Program  
Sector Erase  
FRDO  
FRQIO  
FRQO  
FRDTR  
FRDDTR  
FRQDTR  
PP  
PPQ  
32h/38h  
D7h/20h  
52h  
SER  
BER32 (32KB)  
BER64 (64KB)  
SECUNLOCK  
RDDYB  
WRDYB  
RDPPB  
PGPPB  
Block Erase 32KB  
Block Erase 64KB  
Sector Unlock  
D8h  
26h  
Read DYB  
FA  
Write DYB  
FB  
Read PPB  
FC  
Program PPB  
FD  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
41  
04/15/2019  
IS25LP256D  
IS25WP256D  
Table 8.4 All Instruction Set  
Instruction  
Name  
Operation  
Mode  
Byte0  
Byte1  
Byte2  
Byte3  
Byte4  
Byte5  
Byte6  
Normal Read  
Mode  
(3-byte Address)  
A
A
A
<7:0>  
NORD  
SPI  
SPI  
SPI  
03h  
Data out  
<23:16>  
<15:8>  
Normal Read  
Mode  
(4-byte Address)  
A
A
A
A
<7:0>  
NORD  
4NORD  
FRD  
03h  
13h  
0Bh  
0Bh  
0Ch  
BBh  
BBh  
BCh  
3Bh  
3Bh  
3Ch  
EBh  
EBh  
ECh  
6Bh  
6Bh  
6Ch  
Data out  
Data out  
Data out  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Normal Read  
Mode  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
Fast Read  
Mode  
(3-byte Address)  
SPI  
QPI  
A
A
A
<7:0>  
Dummy(1)  
Byte  
<23:16>  
<15:8>  
Fast Read  
Mode  
(4-byte Address)  
SPI  
QPI  
A
A
A
A
<7:0>  
Dummy(1)  
Byte  
FRD  
Data out  
Data out  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Fast Read  
Mode  
SPI  
QPI  
A
A
A
A
<7:0>  
Dummy(1)  
Byte  
4FRD  
<31::24>  
<23:16>  
<15:8>  
Fast Read  
Dual I/O  
(3-byte Address)  
A
A
A
<7:0>  
Dual  
AXh(1),(2)  
Dual  
Dual  
Data out  
FRDIO  
FRDIO  
4FRDIO  
FRDO  
FRDO  
4FRDO  
FRQIO  
FRQIO  
4FRQIO  
FRQO  
FRQO  
4FRQO  
SPI  
SPI  
SPI  
SPI  
SPI  
SPI  
<23:16>  
Dual  
<15:8>  
Dual  
Fast Read  
Dual I/O  
(4-byte Address)  
A
A
A
<7:0>  
Dual  
A
AXh(1),(2)  
Dual  
Dual  
Data out  
<23:16>  
Dual  
<15:8>  
Dual  
<31::24>  
4-byte Address  
Fast Read  
Dual I/O  
A
A
A
<7:0>  
Dual  
A
AXh(1),(2)  
Dual  
Dual  
Data out  
<23:16>  
Dual  
<15:8>  
Dual  
<31::24>  
Fast Read  
Dual Output  
(3-byte Address)  
A
A
A
<7:0>  
Dummy(1)  
Byte  
Dual  
Data out  
<23:16>  
<15:8>  
Fast Read  
Dual Output  
(4-byte Address)  
A
A
A
A
<7:0>  
Dummy(1)  
Byte  
Dual  
Data out  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Fast Read  
Dual Output  
A
A
A
A
<7:0>  
Dummy(1)  
Byte  
Dual  
Data out  
<31::24>  
<23:16>  
<15:8>  
Fast Read  
Quad I/O  
(3-byte Address)  
A
A
A
<7:0>  
Quad  
SPI  
QPI  
AXh(1), (2)  
Quad  
Quad  
Data out  
<23:16>  
Quad  
<15:8>  
Quad  
Fast Read  
Quad I/O  
(4-byte Address)  
A
A
A
A
<7:0>  
Quad  
SPI  
QPI  
AXh(1), (2)  
Quad  
Quad  
Data out  
<31::24>  
Quad  
<23:16>  
Quad  
<15:8>  
Quad  
4-byte Address  
Fast Read  
Quad I/O  
A
A
A
A
<7:0>  
Quad  
SPI  
QPI  
AXh(1), (2)  
Quad  
Quad  
Data out  
<31::24>  
Quad  
<23:16>  
Quad  
<15:8>  
Quad  
Fast Read  
Quad Output  
(3-byte Address)  
A
A
A
<7:0>  
Dummy(1)  
Byte  
Quad  
Data out  
SPI  
SPI  
SPI  
<23:16>  
<15:8>  
Fast Read  
Quad Output  
(4-byte Address)  
A
A
A
A
<7:0>  
Dummy(1)  
Byte  
Quad  
Data out  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Fast Read  
Quad Output  
A
A
A
A
<7:0>  
Dummy(1)  
Byte  
Quad  
Data out  
<31::24>  
<23:16>  
<15:8>  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
42  
04/15/2019  
IS25LP256D  
IS25WP256D  
Instruction  
Name  
Operation  
Mode  
Byte0  
Byte1  
Byte2  
Byte3  
Byte4  
Byte5  
Byte6  
Fast Read  
DTR Mode  
(3-byte Address)  
SPI  
QPI  
A
A
A
<7:0>  
Dummy(1)  
Byte  
Dual  
Data out  
FRDTR  
FRDTR  
4FRDTR  
FRDDTR  
FRDDTR  
4FRDDTR  
FRQDTR  
FRQDTR  
4FRQDTR  
PP  
0Dh  
<23:16>  
<15:8>  
Fast Read  
DTR Mode  
(4-byte Address)  
SPI  
QPI  
A
A
A
A
<7:0>  
Dummy(1)  
Byte  
Dual  
Data out  
0Dh  
0Eh  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Fast Read  
DTR Mode  
SPI  
QPI  
A
A
A
A
<7:0>  
Dummy(1)  
Byte  
Dual  
Data out  
<31::24>  
<23:16>  
<15:8>  
Fast Read  
Dual I/O DTR  
(3-byte Address)  
A
A
A
<7:0>  
Dual  
AXh(1), (2)  
Dual  
Dual  
Data out  
SPI  
SPI  
SPI  
BDh  
<23:16>  
Dual  
<15:8>  
Dual  
Fast Read  
Dual I/O DTR  
(4-byte Address)  
A
A
A
<7:0>  
Dual  
A
AXh(1), (2)  
Dual  
Dual  
Data out  
BDh  
<23:16>  
Dual  
<15:8>  
Dual  
<31::24>  
4-byte Address  
Fast Read  
Dual I/O DTR  
A
A
A
<7:0>  
Dual  
A
AXh(1), (2)  
Dual  
Dual  
Data out  
BEh  
<23:16>  
Dual  
<15:8>  
Dual  
<31::24>  
Fast Read  
Quad I/O DTR  
SPI  
QPI  
A
A
A
<7:0>  
AXh(1), (2)  
Quad  
Quad  
Data out  
EDh  
<23:16>  
<15:8>  
(3-byte Address)  
Fast Read  
Quad I/O DTR  
(4-byte Address)  
SPI  
QPI  
A
A
A
A
<7:0>  
AXh(1), (2)  
Quad  
Quad  
Data out  
EDh  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Fast Read  
Quad I/O DTR  
SPI  
QPI  
A
A
A
A
<7:0>  
AXh(1), (2)  
Quad  
Quad  
Data out  
EEh  
<31::24>  
<23:16>  
<15:8>  
Input Page  
Program  
(3-byte Address)  
SPI  
QPI  
A
A
A
<7:0>  
PD  
(256byte)  
02h  
<23:16>  
<15:8>  
Input Page  
Program  
(4-byte Address)  
SPI  
QPI  
A
A
A
A
<7:0>  
PD  
(256byte)  
PP  
02h  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Input Page  
Program  
SPI  
QPI  
A
A
A
A
<7:0>  
PD  
(256byte)  
4PP  
12h  
<31::24>  
<23:16>  
<15:8>  
Quad Input  
Page Program  
(3-byte Address)  
A
A
A
<7:0>  
Quad PD  
(256byte)  
PPQ  
SPI  
SPI  
SPI  
32h/38h  
32h/38h  
34h/3Eh  
<23:16>  
<15:8>  
Quad Input  
Page Program  
(4-byte Address)  
A
A
A
A
<7:0>  
Quad PD  
(256byte)  
PPQ  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Quad Input  
Page Program  
A
A
A
A
<7:0>  
Quad PD  
(256byte)  
4PPQ  
<31::24>  
<23:16>  
<15:8>  
Sector Erase  
(3-byte Address)  
SPI  
QPI  
A
A
A
<7:0>  
SER  
SER  
D7h/20h  
D7h/20h  
21h  
<23:16>  
<15:8>  
Sector Erase  
(4-byte Address)  
SPI  
QPI  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Sector Erase  
SPI  
QPI  
A
A
A
A
<7:0>  
4SER  
<31::24>  
<23:16>  
<15:8>  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
43  
04/15/2019  
IS25LP256D  
IS25WP256D  
Instruction  
Name  
Operation  
Mode  
Byte0  
Byte1  
Byte2  
Byte3  
Byte4  
Byte5  
Byte6  
Block Erase  
32Kbyte  
(3-byte Address)  
BER32  
(32KB)  
SPI  
QPI  
A
A
A
<7:0>  
52h  
<23:16>  
<15:8>  
Block Erase  
32Kbyte  
(4-byte Address)  
BER32  
(32KB)  
SPI  
QPI  
A
A
A
A
<7:0>  
52h  
5Ch  
D8h  
D8h  
DCh  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Block Erase  
32Kbyte  
4BER32  
(32KB)  
SPI  
QPI  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
Block Erase  
64Kbyte  
(3-byte Address)  
BER64  
(64KB)  
SPI  
QPI  
A
A
A
<7:0>  
<23:16>  
<15:8>  
Block Erase  
64Kbyte  
(4-byte Address)  
BER64  
(64KB)  
SPI  
QPI  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Block Erase  
64Kbyte  
4BER64  
(64KB)  
SPI  
QPI  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
SPI  
QPI  
CER  
WREN  
WRDI  
Chip Erase  
Write Enable  
Write Disable  
C7h/60h  
06h  
SPI  
QPI  
SPI  
QPI  
04h  
Read Status  
Register  
SPI  
QPI  
RDSR  
WRSR  
RDFR  
WRFR  
QPIEN  
QPIDI  
05h  
Data out  
Data in  
Data out  
Data in  
Write Status  
Register  
SPI  
QPI  
01h  
Read Function  
Register  
SPI  
QPI  
48h  
Write Function  
Register  
SPI  
QPI  
42h  
Enter  
QPI mode  
SPI  
QPI  
35h  
Exit  
QPI mode  
F5h  
Suspend during  
program/erase  
SPI  
QPI  
PERSUS  
PERRSM  
DP  
75h/B0h  
7Ah/30h  
B9h  
Resume  
program/erase  
SPI  
QPI  
Deep Power  
Down  
SPI  
QPI  
Read ID /  
Release  
Power Down  
RDID,  
RDPD  
SPI  
QPI  
ABh  
65h  
XXh(3)  
Data in  
Data in  
Data in  
XXh(3)  
XXh(3)  
ID7-ID0  
Set Read  
Parameters  
(Non-Volatile)  
SPI  
QPI  
SRPNV  
SRPV  
Set Read  
Parameters  
(Volatile)  
SPI  
QPI  
C0h/63h  
85h  
Set Extended  
Read Parameters  
(Non-Volatile)  
SPI  
QPI  
SERPNV  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
44  
04/15/2019  
IS25LP256D  
IS25WP256D  
Instruction  
Name  
Operation  
Mode  
Byte0  
Byte1  
Byte2  
Byte3  
Byte4  
Byte5  
Byte6  
Set Extended  
Read Parameters  
(Volatile)  
SPI  
QPI  
SERPV  
RDRP  
83h  
Data in  
Read Read  
Parameters  
(Volatile)  
SPI  
QPI  
61h  
81h  
Data out  
Data out  
Read Extended  
Read Parameters  
(Volatile)  
SPI  
QPI  
RDERP  
Clear Extended  
Read Register  
SPI  
QPI  
CLERP  
82h  
9Fh  
Read JEDEC  
ID Command  
SPI  
QPI  
RDJDID  
MF7-MF0  
XXh(3)  
ID15-ID8  
XXh(3)  
ID7-ID0  
00h  
01h  
MF7-MF0  
ID7-ID0  
ID7-ID0  
Read  
Manufacturer  
& Device ID  
SPI  
QPI  
RDMDID  
90h  
AFh  
MF7-MF0  
Read JEDEC  
ID  
RDJDIDQ  
QPI  
MF7-MF0  
ID15-ID8  
ID7-ID0  
QPI mode  
Read  
Unique ID  
SPI  
QPI  
A(4)  
<23:16>  
A(4)  
<15:8>  
A(4)  
<7:0>  
Dummy  
Byte  
RDUID  
RDSFDP  
NOP  
4Bh  
5Ah  
00h  
Data out  
Data out  
A
A
A
<7:0>  
Dummy  
Byte  
SFDP Read  
SPI  
<23:16>  
<15:8>  
SPI  
QPI  
No Operation  
Software  
Reset  
Enable  
SPI  
QPI  
RSTEN  
RST  
66h  
99h  
64h  
SPI  
QPI  
Software Reset  
Erase  
Information  
Row  
SPI  
QPI  
A
A
A
IRER  
<23:16>  
<15:8>  
<7:0>  
Program  
Information  
Row  
SPI  
QPI  
A
A
A
<7:0>  
PD  
(256byte)  
IRP  
62h  
68h  
<23:16>  
<15:8>  
Read  
Information  
Row  
SPI  
QPI  
A
A
A
<7:0>  
Dummy  
Byte  
IRRD  
Data out  
<23:16>  
<15:8>  
Sector Unlock  
(3-byte Address)  
SPI  
QPI  
A
A
A
<7:0>  
SECUNLOCK  
SECUNLOCK  
4SECUNLOCK  
SECLOCK  
RDABR  
26h  
26h  
25h  
24h  
14h  
15h  
<23:16>  
<15:8>  
Sector Unlock  
(4-byte Address)  
SPI  
QPI  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Sector Unlock  
SPI  
QPI  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
SPI  
QPI  
Sector Lock  
Read AutoBoot  
Register  
SPI  
QPI  
Data out  
1
Data out  
2
Data out  
3
Data out  
4
Write AutoBoot  
Register  
SPI  
QPI  
WRABR  
Data in 1  
Data in 2  
Data in 3  
Data in 4  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
45  
04/15/2019  
IS25LP256D  
IS25WP256D  
Instruction  
Name  
Operation  
Mode  
Byte0  
Byte1  
Byte2  
Byte3  
Byte4  
Byte5  
Byte6  
Read Bank  
Address Register  
(Volatile)  
SPI  
QPI  
RDBR  
WRBRV  
WRBRNV  
16h/C8h  
Data out  
Write Bank  
Address Register  
(Volatile)  
SPI  
QPI  
17h/C5h  
18h  
Data in  
Data in  
Write Bank  
Address Register  
(Non-Volatile)  
SPI  
QPI  
Enter 4-byte  
Address Mode  
SPI  
QPI  
EN4B  
EX4B  
B7h  
29h  
FAh  
FAh  
E0h  
FBh  
FBh  
E1h  
FCh  
FCh  
E2h  
Exit 4-byte  
Address Mode  
SPI  
QPI  
Read DYB  
(3-byte Address)  
SPI  
QPI  
A
A
A
<7:0>  
RDDYB  
RDDYB  
4RDDYB  
WRDYB  
WRDYB  
4WRDYB  
RDPPB  
RDPPB  
4RDPPB  
Data out  
<23:16>  
<15:8>  
Read DYB  
(4-byte Address)  
SPI  
QPI  
A
A
A
A
<7:0>  
Data out  
Data out  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Read DYB  
SPI  
QPI  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
Write DYB  
(3-byte Address)  
SPI  
QPI  
A
A
A
<7:0>  
Data in  
<23:16>  
<15:8>  
Write DYB  
(4-byte Address)  
SPI  
QPI  
A
A
A
A
<7:0>  
Data in  
Data in  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Write DYB  
SPI  
QPI  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
Read PPB  
(3-byte Address)  
A
A
A
<7:0>  
SPI  
SPI  
SPI  
Data out  
<23:16>  
<15:8>  
Read PPB  
(4-byte Address)  
A
A
A
A
<7:0>  
Data out  
Data out  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Read PPB  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
Program PPB  
(Individually)  
(3-byte Address)  
SPI  
QPI  
A
A
A
<7:0>  
PGPPB  
PGPPB  
4PGPPB  
FDh  
FDh  
E3h  
<23:16>  
<15:8>  
Program PPB  
(Individually)  
(4-byte Address)  
SPI  
QPI  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
4-byte Address  
Program PPB  
(Individually)  
SPI  
QPI  
A
A
A
A
<7:0>  
<31::24>  
<23:16>  
<15:8>  
Erase PPB (as  
a group)  
SPI  
QPI  
ERPPB  
RDASP  
PGASP  
RDPLB  
WRPLB  
SFRZ  
E4h  
2Bh  
2Fh  
A7h  
A6h  
91h  
SPI  
QPI  
Data out  
(2 byte)  
Read ASP  
SPI  
QPI  
PD  
(2 byte)  
Program ASP  
Read PPB Lock  
Bit  
SPI  
QPI  
Data out  
Write PPB Lock  
Bit  
SPI  
QPI  
SPI  
QPI  
Set FREEZE bit  
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Instruction  
Name  
Operation  
Mode  
Byte0  
E7h  
Byte1  
Byte2  
Byte3  
Byte4  
Byte5  
Byte6  
SPI  
QPI  
Data out  
(8 byte)  
RDPWD  
PGPWD  
UNPWD  
Read Password  
Program  
Password  
SPI  
QPI  
PD  
(8 byte)  
E8h  
Unlock  
Password  
SPI  
QPI  
Data in  
(8 byte)  
E9h  
Set all DYB bits  
(Gang Sector/  
Block Lock)  
SPI  
QPI  
GBLK  
7Eh  
98h  
Clear all DYB bits  
(Gang Sector/  
Block Unlock)  
SPI  
QPI  
GBUN  
Notes:  
1. The number of dummy cycles depends on the value setting in the Table 6.11 Read Dummy Cycles.  
2. AXh has to be counted as a part of dummy cycles. X means “don’t care”.  
3. XX means “don’t care”.  
4. A<23:9> are “don’t care” and A<8:4> are always “0”.  
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8.3 NORMAL READ OPERATION (NORD, 03h or 4NORD, 13h)  
The Normal Read (NORD) instruction is used to read memory contents at a maximum frequency of 80MHz.  
03h (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
03h (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
13h is followed by a 4-byte address (A31-A0)  
The Normal Read instruction code is transmitted via the SI line, followed by three (A23 - A0) or four (A31 A0)  
address bytes of the first memory location to be read as above. A total of 24 or 32 address bits are shifted in, but  
only AVMSB (Valid Most Significant Bit) - A0 are decoded. The remaining bits (A31 AVMSB+1) are ignored. The first  
byte addressed can be at any memory location. Upon completion, any data on the SI will be ignored. Refer to Table  
8.5 for the related Address Key.  
The first byte data (D7 - D0) is shifted out on the SO line, MSB first. A single byte of data, or up to the whole memory  
array, can be read out in one Normal Read instruction. The address is automatically incremented by one after each  
byte of data is shifted out. The read operation can be terminated at any time by driving CE# high (VIH) after the  
data comes out. When the highest address of the device is reached, the address counter will roll over to the  
000000h address, allowing the entire memory to be read in one continuous Read instruction.  
If the Normal Read instruction is issued while an Erase, Program or Write operation is in process (WIP=1) the  
instruction is ignored and will not have any effects on the current operation.  
Table 8.5 Address Key  
Valid Address  
256Mb  
A23-A0  
A24-A0 (A31-A25=X)(2)  
Mode  
3 byte address  
4 byte address  
AVMSB(2)A0  
Notes:  
1. X=Don’t Care  
2. AVMSB is a Valid MSB. In 4 byte address for 256Mb, A31 is an MSB, and A24 is a Valid MSB.  
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Figure 8.1 Normal Read Sequence (03h [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
21  
...  
28  
29  
30  
31  
Mode 3  
Mode 0  
SCK  
3-byte Address  
...  
SI  
3
Instruction = 03h  
2
1
0
23  
22  
High Impedance  
SO  
CE#  
SCK  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
...  
SI  
Data Out 1  
Data Out 2  
SO  
...  
1
0
1
0
3
6
5
4
3
2
7
6
5
4
2
7
tV  
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Figure 8.2 Normal Read Sequence (03h [EXTADD=1] or 13h, 4-byte address)  
CE#  
36  
37  
38  
39  
0
1
2
3
4
5
6
7
8
9
10  
29  
...  
Mode 3  
Mode 0  
SCK  
4-byte Address  
...  
SI  
3
Instruction = 03h/13h  
2
1
0
31  
30  
High Impedance  
SO  
CE#  
SCK  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
...  
SI  
Data Out 1  
Data Out 2  
SO  
...  
1
0
1
0
3
6
5
4
3
2
7
6
5
4
2
7
tV  
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8.4 FAST READ OPERATION (FRD, 0Bh or 4FRD, 0Ch)  
The Fast Read (FRD, 4FRD) instruction is used to read memory data at up to a 166MHz clock.  
0Bh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
0Bh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
0Ch is followed by a 4-byte address (A31-A0)  
The Fast Read instruction code is followed by three or four address bytes as above and dummy cycles  
(configurable, default is 8 clocks), transmitted via the SI line, with each bit latched-in during the rising edge of SCK.  
Then the first data byte from the address is shifted out on the SO line, with each bit shifted out at a maximum  
frequency fCT, during the falling edge of SCK.  
The first byte addressed can be at any memory location. The address is automatically incremented by one after  
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the  
000000h address, allowing the entire memory to be read with a single Fast Read instruction. The Fast Read  
instruction is terminated by driving CE# high (VIH).  
If the Fast Read instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction  
is ignored without affecting the current cycle.  
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Figure 8.3 Fast Read Sequence (0Bh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
21  
...  
28  
29  
30  
31  
Mode 3  
Mode 0  
SCK  
SI  
3-byte Address  
...  
3
Instruction = 0Bh  
2
1
0
23  
22  
High Impedance  
SO  
CE#  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
...  
SCK  
SI  
Dummy Cycles  
Data Out  
tV  
SO  
...  
1
0
3
7
6
5
4
2
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.  
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Figure 8.4 Fast Read Sequence (0Bh [EXTADD=1] or 0Ch, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
29  
...  
36  
37  
38  
39  
Mode 3  
Mode 0  
SCK  
SI  
4-byte Address  
...  
3
Instruction = 0Bh/0Ch  
High Impedance  
2
1
0
31  
30  
SO  
CE#  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
...  
SCK  
SI  
Dummy Cycles  
Data Out  
tV  
SO  
...  
1
0
3
7
6
5
4
2
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.  
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FAST READ OPERATION IN QPI MODE (FRD, 0Bh or 4FRD, 0Ch)  
The Fast Read (FRD) instruction in QPI mode is used to read memory data at up to a 166MHz clock.  
0Bh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
0Bh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
0Ch is followed by a 4-byte address (A31-A0)  
The Fast Read instruction code (2 clocks) is followed by three (6 clocks) or four (8 clocks) address bytes as above  
and 6 dummy cycles (configurable, default is 6 clocks), transmitted via the IO3, IO2, IO1 and IO0 lines, with each  
bit latched-in during the rising edge of SCK. Then the first data byte addressed is shifted out on the IO3, IO2, IO1  
and IO0 lines, with each bit shifted out at a maximum frequency fCT, during the falling edge of SCK.  
The first byte addressed can be at any memory location. The address is automatically incremented by one after  
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the  
000000h address, allowing the entire memory to be read with a single Fast Read QPI instruction. The Fast Read  
QPI instruction is terminated by driving CE# high (VIH).  
If the Fast Read instruction in QPI mode is issued while an Erase, Program or Write cycle is in process (WIP=1)  
the instruction is ignored without affecting the current cycle.  
The Fast Read sequence in QPI mode is also applied to the commands in the following table 8.6. However, only  
3-byte address mode QPI sequence is applied for RDUID, RDSFDP, and IRRD commands.  
Table 8.6 Instructions that Fast Read sequence in QPI Mode is applied to  
Instruction Name  
FRQIO  
Operation  
Fast Read Quad I/O  
Hex Code  
EBh  
RDUID  
Read Unique ID  
SFDP Read  
4Bh  
RDSFDP  
IRRD  
5Ah  
Read Information Row  
68h  
Figure 8.5 Fast Read QPI Sequence (0Bh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
...  
13  
14  
15  
16  
17  
...  
Mode 3  
Mode 0  
SCK  
tV  
...  
IO[3:0]  
0Bh  
Instruction  
23:20 19:16 15:12 11:8 7:4 3:0  
3-byte Address  
7:4 3:0  
Data 1  
7:4 3:0  
Data 2  
6 Dummy Cycles  
Note: Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy  
Cycles.  
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Figure 8.6 Fast Read Sequence In QPI Mode (0Bh [EXTADD=1] or 0Ch, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
...  
15  
16  
17  
...  
Mode 3  
Mode 0  
SCK  
tV  
...  
IO[3:0]  
0Bh/0Ch 31:28 27:24 23:20 19:16 15:12 11:8 7:4 3:0  
Instruction 4-byte Address  
7:4 3:0  
Data 1  
6 Dummy Cycles  
Note: Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy  
Cycles.  
8.5 HOLD OPERATION  
HOLD# is used in conjunction with CE# to select the device. When the device is selected and a serial sequence is  
underway, HOLD# can be used to pause the serial communication with the master device without resetting the  
serial sequence. To pause, HOLD# is brought low while the SCK signal is low. To resume serial communication,  
HOLD# is brought high while the SCK signal is low (SCK may still toggle during HOLD). Inputs to SI will be ignored  
while SO is in the high impedance state, during HOLD.  
Note: HOLD is not supported in DTR mode or with QE=1 or when RESET# is selected for the HOLD# or RESET# pin.  
Timing graph can be referenced in AC Parameters Figure 9.4.  
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8.6 FAST READ DUAL I/O OPERATION (FRDIO, BBh or 4FRDIO, BCh)  
The Fast Read Dual I/O (FRDIO, 4FRDIO) instruction allows the address bits to be input two bits at a time. This  
may allow for code to be executed directly from the SPI in some applications.  
BBh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
BBh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
BCh is followed by a 4-byte address (A31-A0)  
The FRDIO/4FRDIO instruction code is followed by three or four address bytes as above and dummy cycles  
(configurable, default is 4 clocks), transmitted via the IO1 and IO0 lines, with each pair of bits latched-in during the  
rising edge of SCK. The address MSB is input on IO1, the next bit on IO0, and this shift pattern continues to  
alternate between the two lines. Depending on the usage of AX read operation mode, a mode byte may be located  
after address input.  
The first data byte addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a maximum  
frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO1, while simultaneously the second  
bit is output on IO0. Figures 8.7 and 8.8 illustrates the timing sequence.  
The first byte addressed can be at any memory location. The address is automatically incremented by one after  
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the  
000000h address, allowing the entire memory to be read with a single FRDIO/4FRDIO instruction. The  
FRDIO/4FRDIO instruction is terminated by driving CE# high (VIH).  
The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8  
bits, such as M7 to M0. Four cycles after address input are reserved for Mode bits in FRDIO/4FRDIO execution.  
M7 to M4 are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah),  
it enables the AX read operation and subsequent FRDIO/4FRDIO execution skips command code. It saves cycles  
as described in Figures 8.9 and 8.10. When the code is different from AXh (where X is don’t care), the device exits  
the AX read operation. After finishing the read operation, device becomes ready to receive a new command. SPI  
or QPI mode configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number of  
dummy cycles in Table 6.11 includes number of mode bit cycles. If dummy cycles are configured as 4 cycles, data  
output will start right after mode bit is applied.  
If the FRDIO/4FRDIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the  
instruction is ignored and will not affect the current cycle.  
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Figure 8.7 Fast Read Dual I/O Sequence (BBh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
...  
18  
19  
20  
21  
Mode 3  
Mode 0  
SCK  
4 Dummy Cycles  
3-byte Address  
...  
IO0  
IO1  
2
3
Instruction = BBh  
0
1
6
7
4
22  
23  
20  
21  
18  
High Impedance  
...  
5
19  
Mode Bits  
CE#  
SCK  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
...  
tV  
...  
...  
IO0  
2
0
1
4
5
0
1
2
0
1
6
7
2
6
7
6
7
6
7
4
2
0
1
4
4
Data Out 1  
Data Out 2  
Data Out 3  
IO1  
3
5
3
3
5
3
5
Mode Bits  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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Figure 8.8 Fast Read Dual I/O Sequence (BBh [EXTADD=1] or BCh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
...  
22  
23  
24  
25  
Mode 3  
Mode 0  
SCK  
4 Dummy Cycles  
4-byte Address  
...  
IO0  
IO1  
2
3
Instruction = BBh/BCh  
0
1
6
7
4
30  
31  
28  
29  
26  
High Impedance  
...  
5
27  
Mode Bits  
CE#  
SCK  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
36  
41  
...  
tV  
...  
...  
IO0  
IO1  
2
0
1
4
5
0
1
2
0
1
6
7
2
6
7
6
7
6
7
4
2
0
1
4
4
Data Out 1  
Data Out 2  
Data Out 3  
3
5
3
3
5
3
5
Mode Bits  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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Figure 8.9 Fast Read Dual I/O AX Read Sequence (BBh [EXTADD=0], 3-byte address)  
CE#  
...  
0
1
2
3
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
...  
Mode 3  
Mode 0  
SCK  
4 Dummy Cycles  
tV  
3-byte Address  
Data Out 1  
Data Out 2  
4
...  
...  
IO0  
IO1  
2
3
6
7
2
6
7
2
0
1
4
0
1
4
0
1
6
7
22  
23  
20  
21  
18  
...  
...  
3
3
5
5
5
19  
Mode Bits  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the  
mode bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
Figure 8.10 Fast Read Dual I/O AX Read Sequence (BBh [EXTADD=1] or BCh, 4-byte address)  
CE#  
...  
0
1
2
3
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
...  
Mode 3  
Mode 0  
SCK  
4 Dummy Cycles  
tV  
4-byte Address  
Data Out 1  
Data Out 2  
4
...  
...  
IO0  
IO1  
2
3
6
7
2
6
7
2
0
1
4
0
1
4
0
1
6
7
30  
31  
28  
29  
26  
...  
...  
3
3
5
5
5
27  
Mode Bits  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the  
mode bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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8.7 FAST READ DUAL OUTPUT OPERATION (FRDO, 3Bh or 4FRDO, 3Ch)  
The FRDO/4FRDO instruction is used to read memory data on two output pins each at up to a 166MHz clock.  
3Bh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
3Bh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
3Ch is followed by a 4-byte address (A31-A0)  
The FRDO/4FRDO instruction code is followed by three or four address bytes as above and dummy cycles  
(configurable, default is 8 clocks), transmitted via the IO0 line, with each bit latched-in during the rising edge of SCK.  
Then the first data byte addressed is shifted out on the IO1 and IO0 lines, with each pair of bits shifted out at a  
maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO1. Simultaneously, the  
second bit is output on IO0.  
The first byte addressed can be at any memory location. The address is automatically incremented by one after  
each byte of data is shifted out. When the highest address is reached, the address counter will roll over to the  
000000h address, allowing the entire memory to be read with a single FRDO/4FRDO instruction. The instruction  
FRDO/4FRDO is terminated by driving CE# high (VIH).  
If the FRDO/4FRDO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the  
instruction is ignored and will not have any effects on the current cycle.  
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Figure 8.11 Fast Read Dual Output Sequence (3Bh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
21  
...  
28  
29  
30  
31  
Mode 3  
Mode 0  
SCK  
3-byte Address  
...  
3
IO0  
IO1  
Instruction = 3Bh  
2
1
0
23  
22  
High Impedance  
CE#  
SCK  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
...  
tV  
...  
...  
IO0  
IO1  
0
1
2
6
7
4
6
7
4
2
0
1
8 Dummy Cycles  
Data Out 1  
Data Out 2  
3
5
5
3
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.  
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Figure 8.12 Fast Read Dual Output Sequence (3Bh [EXTADD=1] or 3Ch, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
29  
...  
36  
37  
38  
39  
Mode 3  
Mode 0  
SCK  
4-byte Address  
...  
3
IO0  
IO1  
Instruction = 3Bh/3Ch  
High Impedance  
2
1
0
31  
30  
CE#  
SCK  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
...  
tV  
...  
...  
IO0  
IO1  
0
1
2
6
7
4
6
7
4
2
0
1
8 Dummy Cycles  
Data Out 1  
Data Out 2  
3
5
3
5
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.  
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IS25LP256D  
IS25WP256D  
8.8 FAST READ QUAD OUTPUT OPERATION (FRQO, 6Bh or 4FRQO 6Ch)  
The FRQO/4FRQO instruction is used to read memory data on four output pins each at up to a 166 MHz clock.  
A Quad Enable (QE) bit of Status Register must be set to "1" before sending the Fast Read Quad Output instruction.  
6Bh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
6Bh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
6Ch is followed by a 4-byte address (A31-A0)  
The FRQO/4FRQO instruction code is followed by three or four address bytes as above and dummy cycles  
(configurable, default is 8 clocks), transmitted via the IO0 line, with each bit latched-in during the rising  
edge of SCK. Then the first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with  
each group of four bits shifted out at a maximum frequency fCT, during the falling edge of SCK. The first  
bit (MSB) is output on IO3, while simultaneously the second bit is output on IO2, the third bit is output on  
IO1, etc.  
The first byte addressed can be at any memory location. The address is automatically incremented after  
each byte of data is shifted out. When the highest address is reached, the address counter will roll over  
to the 000000h address, allowing the entire memory to be read with a single FRQO/4FRQO instruction.  
FRQO/4FRQO instruction is terminated by driving CE# high (VIH).  
If a FRQO/4FRQO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the  
instruction is ignored and will not have any effects on the current cycle.  
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IS25LP256D  
IS25WP256D  
Figure 8.13  
Fast Read Quad Output Sequence (6Bh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
21  
...  
28  
29  
30  
31  
Mode 3  
SCK  
IO0  
Mode 0  
3-byte Address  
...  
3
Instruction = 6Bh  
2
1
0
23  
22  
High Impedance  
IO1  
IO2  
IO3  
High Impedance  
High Impedance  
CE#  
SCK  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
...  
tV  
...  
IO0  
IO1  
IO2  
IO3  
0
4
4
0
4
0
4
0
8 Dummy Cycles  
Data Out 1 Data Out 2 Data Out 3 Data Out 4  
1
...  
...  
5
5
1
5
1
5
1
2
6
6
2
6
2
6
2
3
...  
7
7
3
7
3
7
3
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
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04/15/2019  
IS25LP256D  
IS25WP256D  
Figure 8.14  
Fast Read Quad Output Sequence (6Bh [EXTADD=1] or 6Ch, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
29  
...  
36  
37  
38  
39  
Mode 3  
SCK  
IO0  
Mode 0  
4-byte Address  
...  
3
Instruction = 6Bh/6Ch  
2
1
0
31  
30  
High Impedance  
High Impedance  
High Impedance  
IO1  
IO2  
IO3  
CE#  
SCK  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
...  
tV  
...  
IO0  
IO1  
IO2  
IO3  
0
4
4
0
4
0
4
0
8 Dummy Cycles  
Data Out 1 Data Out 2 Data Out 3 Data Out 4  
1
...  
...  
5
5
1
5
1
5
1
2
6
6
2
6
2
6
2
3
...  
7
7
3
7
3
7
3
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
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04/15/2019  
IS25LP256D  
IS25WP256D  
8.9 FAST READ QUAD I/O OPERATION (FRQIO, EBh or 4FRQIO, ECh)  
The FRQIO/4FRQIO instruction allows the address bits to be input four bits at a time. This may allow for  
code to be executed directly from the SPI in some applications.  
A Quad Enable (QE) bit of Status Register must be set to "1" before sending the Fast Read Quad I/O instruction.  
EBh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
EBh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
ECh is followed by a 4-byte address (A31-A0)  
The FRQIO/4FRQIO instruction code is followed by three or four address bytes as above and dummy cycles  
(configurable, default is 6 clocks), transmitted via the IO3, IO2, IO1 and IO0 lines, with each group of four bits  
latched-in during the rising edge of SCK. The address of MSB inputs on IO3, the next bit on IO2, the next bit on  
IO1, the next bit on IO0, and continue to shift in alternating on the four. Depending on the usage of AX read  
operation mode, a mode byte may be located after address input.  
The first data byte addressed is shifted out on the IO3, IO2, IO1 and IO0 lines, with each group of four bits shifted  
out at a maximum frequency fCT, during the falling edge of SCK. The first bit (MSB) is output on IO3, while  
simultaneously the second bit is output on IO2, the third bit is output on IO1, etc. Figures 8.15 and 8.16 illustrates  
the timing sequence.  
The first byte addressed can be at any memory location. The address is automatically incremented after each byte  
of data is shifted out. When the highest address is reached, the address counter will roll over to the 000000h  
address, allowing the entire memory to be read with a single FRQIO/4FRQIO instruction. FRQIO/4FRQIO  
instruction is terminated by driving CE# high (VIH).  
The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8  
bits, such as M7 to M0. Two cycles after address input are reserved for Mode bits in FRQIO/4FRQIO execution.  
M7 to M4 are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah),  
it enables the AX read operation and subsequent FRQIO/4FRQIO execution skips command code. It saves cycles  
as described in Figures 8.17 and 8.18. When the code is different from AXh (where X is don’t care), the device  
exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command.  
SPI or QPI mode configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number  
of dummy cycles in Table 6.11 includes number of mode bit cycles. If dummy cycles are configured as 6 cycles,  
data output will start right after mode bits and 4 additional dummy cycles are applied.  
If the FRQIO/4FRQIO instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the  
instruction is ignored and will not have any effects on the current cycle.  
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IS25LP256D  
IS25WP256D  
Figure 8.15 Fast Read Quad I/O Sequence (EBh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
3-byte Address  
IO0  
IO1  
4
5
6
7
Instruction = EBh  
High Impedance  
0
1
2
3
4
5
6
7
0
1
2
3
20  
21  
22  
23  
16  
17  
18  
19  
12  
13  
14  
15  
8
9
IO2  
IO3  
10  
11  
Mode Bits  
CE#  
SCK  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
...  
6 Dummy Cycles  
Data Out 1 Data Out 2 Data Out 3 Data Out 4  
Data Out 5 Data Out 6  
tV  
...  
...  
...  
...  
IO0  
0
1
2
3
4
5
6
7
4
5
6
7
4
5
6
7
0
1
2
3
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
4
5
6
7
0
1
2
3
0
1
2
3
IO1  
IO2  
IO3  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
Integrated Silicon Solution, Inc.- www.issi.com  
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IS25LP256D  
IS25WP256D  
Figure 8.16 Fast Read Quad I/O Sequence (EBh [EXTADD=1] or ECh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
4-byte Address  
IO0  
IO1  
4
5
6
7
Instruction = EBh/ECh  
High Impedance  
0
1
2
3
28  
29  
30  
31  
24  
25  
26  
27  
20  
21  
22  
23  
16  
17  
18  
19  
12  
13  
14  
15  
8
9
IO2  
IO3  
10  
11  
CE#  
SCK  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
...  
6 Dummy Cycles  
Data Out 1 Data Out 2 Data Out 3  
Data Out 4 Data Out 5  
tV  
...  
...  
...  
...  
IO0  
IO1  
0
1
2
3
4
5
6
7
4
5
6
7
0
1
2
3
0
1
2
3
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
4
5
6
7
IO2  
IO3  
Mode Bits  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
Integrated Silicon Solution, Inc.- www.issi.com  
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IS25LP256D  
IS25WP256D  
Figure 8.17 Fast Read Quad I/O AX Read Sequence (EBh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
...  
Mode 3  
Mode 0  
SCK  
6 Dummy Cycles  
3-byte Address  
Data Out 1 Data Out 2  
tV  
...  
...  
...  
...  
IO0  
IO1  
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
0
1
2
3
4
5
6
7
4
5
6
7
20  
21  
22  
23  
16  
17  
18  
19  
12  
13  
14  
15  
8
9
0
1
2
3
IO2  
IO3  
10  
11  
Mode Bits  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the  
mode bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
Integrated Silicon Solution, Inc.- www.issi.com  
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IS25LP256D  
IS25WP256D  
Figure 8.18 Fast Read Quad I/O AX Read Sequence (EBh [EXTADD=1] or ECh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
...  
Mode 3  
Mode 0  
SCK  
6 Dummy Cycles  
4-byte Address  
Data Out 1  
tV  
...  
...  
...  
...  
IO0  
IO1  
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
0
1
2
3
4
5
6
7
28  
29  
30  
31  
24  
25  
26  
27  
20  
21  
22  
23  
16  
17  
18  
19  
12  
13  
14  
15  
8
9
IO2  
IO3  
10  
11  
Mode Bits  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the  
mode bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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IS25WP256D  
FAST READ QUAD I/O OPERATION IN QPI MODE (FRQIO, EBh or 4FRQIO, ECh)  
The FRQIO/4FRQIO instruction in QPI mode is used to read memory data at up to a 166MHz clock.  
It is not required to set QE bit to “1”.before Fast Read Quad I/O instruction in QPI mode.  
The FRQIO/4FRQIO instruction in QPI mode utilizes all four IO lines to input the instruction code so that only two  
clocks are required, while the FRQIO/4FRQIO instruction requires that the byte-long instruction code is shifted into  
the device only via IO0 line in eight clocks. As a result, 6 command cycles will be reduced by the FRQIO/4FRQIO  
QPI instruction. In addition, subsequent address and data out are shifted in/out via all four IO lines like the  
FRQIO/4FRQIO instruction. In fact, except for the command cycle, the FRQIO/4FRQIO operation in QPI mode is  
exactly same as the FRQIO/4FRQIO operation in SPI mode.  
The device supports the AX read operation by applying mode bits during dummy period. Mode bits consist of 8  
bits, such as M7 to M0. Two cycles after address input are reserved for Mode bits in FRQIO/4FRQIO execution.  
M7 to M4 are important for enabling this mode. M3 to M0 become don’t care for future use. When M[7:4]=1010(Ah),  
it enables the AX read operation and subsequent FRQIO/4FRQIO execution skips command code. It saves cycles  
as described in Figures 8.17 and 8.18. When the code is different from AXh (where X is don’t care), the device  
exits the AX read operation. After finishing the read operation, device becomes ready to receive a new command.  
SPI or QPI mode configuration retains the prior setting. Mode bit must be applied during dummy cycles. Number  
of dummy cycles in Table 6.11 includes number of mode bit cycles. If dummy cycles are configured as 6 cycles,  
data output will start right after mode bits and 4 additional dummy cycles are applied.  
If the FRQIO/4FRQIO instruction in QPI mode is issued while an Erase, Program or Write cycle is in process  
(WIP=1) the instruction is ignored and will not have any effects on the current cycle.  
Figure 8.19 Fast Read Quad I/O Sequence In QPI Mode (EBh [EXTADD=0], 3-byte address)  
CE#  
...  
0
1
2
3
4
5
6
7
8
9
13  
14  
15  
16  
17  
...  
Mode 3  
Mode 0  
SCK  
tV  
Mode Bits  
7:4 3:0  
...  
IO[3:0]  
23:20 19:16 15:12 11:8 7:4 3:0  
3-byte Address  
EBh  
Instruction  
7:4 3:0  
Data 1  
7:4 3:0  
Data 2  
6 Dummy Cycles  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy  
Cycles.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
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04/15/2019  
IS25LP256D  
IS25WP256D  
Figure 8.20 Fast Read Quad I/O Sequence In QPI Mode (EBh [EXTADD=1] or ECh, 4-byte address)  
CE#  
10  
0
1
2
3
4
5
6
7
8
9
11  
...  
15  
16  
17  
...  
Mode 3  
Mode 0  
SCK  
tV  
Mode Bits  
7:4 3:0  
...  
31:28 27:24 23:20 18:16 15:12 11:8 7:4 3:0  
4-byte Address  
7:4 3:0  
Data 1  
IO[3:0]  
EBh/ECh  
6 Dummy Cycles  
Instruction  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy  
Cycles.  
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Rev A6  
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04/15/2019  
IS25LP256D  
IS25WP256D  
8.10 PAGE PROGRAM OPERATION (PP, 02h or 4PP, 12h)  
The Page Program (PP/4PP) instruction allows up to 256 bytes data to be programmed into memory in a single  
operation. The destination of the memory to be programmed must be outside the protected memory area set by  
the Block Protection bits (BP3, BP2, BP1, BP0) or ASP. A PP/4PP instruction which attempts to program into a  
page that is write-protected will be ignored. Before the execution of PP/4PP instruction, the Write Enable Latch  
(WEL) must be enabled through a Write Enable (WREN) instruction.  
02h (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
02h (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
12h is followed by a 4-byte address (A31-A0)  
The PP/4PP instruction code, three or four address bytes as above and program data (1 to 256 bytes) are input via  
the SI line. Program operation will start immediately after the CE# is brought high, otherwise the PP/4PP instruction  
will not be executed. The internal control logic automatically handles the programming voltages and timing. The  
progress or completion of the program operation can be determined by reading the WIP bit. If the WIP bit is “1”,  
the program operation is still in progress. If WIP bit is “0”, the program operation has completed.  
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously  
latched data are discarded, and the last 256 bytes are kept to be programmed into the page. The starting byte can  
be anywhere within the page. When the end of the page is reached, the address will wrap around to the beginning  
of the same page. If the data to be programmed are less than a full page, the data of all other bytes on the same  
page will remain unchanged.  
Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s. A  
byte cannot be reprogrammed without first erasing the whole sector or block.  
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Figure 8.21 Page Program Sequence (02h [EXTADD=0], 3-byte address)  
CE#  
0
1
...  
7
8
9
...  
31  
32  
33  
...  
39  
...  
...  
...  
Mode 3  
Mode 0  
SCK  
3-byte Address  
Data In 1  
Data In 256  
SI  
...  
...  
6
...  
0
7
0
0
Instruction = 02h  
7
23  
22  
High Impedance  
SO  
Figure 8.22 Page Program QPI Sequence (02h [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
...  
...  
Mode 3  
Mode 0  
SCK  
02h  
23:20 19:16 15:12 11:8 7:4 3:0  
3-byte Address  
7:4 3:0  
Data In 1  
7:4 3:0 7:4 3:0  
Data In 2 Data In 3  
7:4 3:0  
Data In 4  
IO[3:0]  
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Rev A6  
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IS25LP256D  
IS25WP256D  
Figure 8.23 Page Program Sequence In SPI Mode (02h [EXTADD=1] or 12h, 4-byte address)  
CE#  
0
1
...  
7
8
9
...  
39  
40  
41  
...  
47  
...  
...  
...  
Mode 3  
Mode 0  
SCK  
4-byte Address  
Data In 1  
Data In 256  
...  
SI  
...  
...  
6
0
7
0
0
Instruction = 02h/12h  
High Impedance  
7
31  
30  
SO  
Figure 8.24 Page Program Sequence In QPI Mode (02h [EXTADD=1] or 12h, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
...  
...  
Mode 3  
Mode 0  
SCK  
02h/12h 31:28 27:24 23:20 19:16 15:12 11:8 7:4 3:0  
4-byte Address  
7:4 3:0 7:4 3:0  
Data In 1 Data In 2  
7:4 3:0  
Data In 3  
IO[3:0]  
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IS25WP256D  
8.11 QUAD INPUT PAGE PROGRAM OPERATION (PPQ, 32h/38h or 4PPQ, 34h/3Eh)  
The Quad Input Page Program instruction allows up to 256 bytes data to be programmed into memory in a single  
operation with four pins (IO0, IO1, IO2 and IO3). The destination of the memory to be programmed must be outside  
the protected memory area set by the Block Protection (BP3, BP2, BP1, BP0) bits or ASP. A Quad Input Page  
Program instruction which attempts to program into a page that is write-protected will be ignored.  
Before the execution of Quad Input Page Program instruction, the QE bit in the Status Register must be set to “1”  
and the Write Enable Latch (WEL) must be enabled through a Write Enable (WREN) instruction.  
32h/38h (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
32h/38h (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
34h/3Eh is followed by a 4-byte address (A31-A0)  
Program operation will start immediately after the CE# is brought high, otherwise the Quad Input Page Program  
instruction will not be executed. The internal control logic automatically handles the programming voltages and  
timing. The progress or completion of the program operation can be determined by reading the WIP bit. If the WIP  
bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program operation has completed.  
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously  
latched data are discarded, and the last 256 bytes data are kept to be programmed into the page. The starting byte  
can be anywhere within the page. When the end of the page is reached, the address will wrap around to the  
beginning of the same page. If the data to be programmed are less than a full page, the data of all other bytes on  
the same page will remain unchanged.  
Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s. A  
byte cannot be reprogrammed without first erasing the whole sector or block.  
Figure 8.25 Quad Input Page Program operation (32h/38h [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
...  
31  
32  
33  
34  
35  
...  
Mode 3  
Mode 0  
SCK  
3-byte Address  
Data In 1  
Data In 2  
...  
...  
...  
...  
IO0  
IO1  
...  
4
5
6
7
Instruction = 32h/38h  
High Impedance  
0
1
2
3
4
5
6
7
0
1
2
3
23  
22  
0
IO2  
IO3  
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Figure 8.26 Quad Input Page Program operation (32h/38h [EXTADD=1] or 34h/3Eh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
...  
39  
40  
41  
42  
43  
...  
Mode 3  
Mode 0  
SCK  
4-byte Address  
Data In 1  
Data In 2  
...  
...  
...  
...  
IO0  
IO1  
...  
4
5
6
7
Instruction = 32h/38h/34h/3Eh  
High Impedance  
0
1
2
3
4
5
6
7
0
1
2
3
31  
30  
0
IO2  
IO3  
8.12 ERASE OPERATION  
The memory array of the device is organized into uniform 4 Kbyte sectors or 32/64 Kbyte uniform blocks (a block  
consists of eight/sixteen adjacent sectors respectively).  
Before a byte is reprogrammed, the sector or block that contains the byte must be erased (erasing sets bits to “1”).  
In order to erase the device, there are three erase instructions available: Sector Erase (SER), Block Erase (BER),  
and Chip Erase (CER). A sector erase operation allows any individual sector to be erased without affecting the  
data in other sectors. A block erase operation erases any individual block. A chip erase operation erases the whole  
memory array of a device. A sector erase, block erase, or chip erase operation can be executed prior to any  
programming operation.  
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8.13 SECTOR ERASE OPERATION (SER, D7h/20h or 4SER, 21h)  
A Sector Erase (SER/4SER) instruction erases a 4 Kbyte sector before the execution of a SER/4SER instruction,  
the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is automatically  
reset after the completion of Sector Erase operation.  
D7h/20h (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
D7h/20h (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
21h is followed by a 4-byte address (A31-A0)  
A SER/4SER instruction is entered, after CE# is pulled low to select the device and stays low during the entire  
instruction sequence The SER/4SER instruction code, and three or four address bytes as above are input via SI.  
Erase operation will start immediately after CE# is pulled high. The internal control logic automatically handles the  
erase voltage and timing.  
The progress or completion of the erase operation can be determined by reading the WIP bit. If the WIP bit is “1”,  
the erase operation is still in progress. If the WIP bit is “0”, the erase operation has been completed.  
Figure 8.27 Sector Erase Sequence (D7h/20h [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
21  
...  
28  
29  
30  
31  
Mode 3  
Mode 0  
SCK  
3-byte Address  
...  
SI  
3
Instruction = D7h/20h  
2
1
0
23  
22  
High Impedance  
SO  
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Figure 8.28 Sector Erase Sequence (D7h/20h [EXTADD=1] or 21h, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
29  
...  
36  
37  
38  
39  
Mode 3  
Mode 0  
SCK  
4-byte Address  
...  
SI  
3
Instruction = D7h/20h/21h  
High Impedance  
2
1
0
31  
30  
SO  
Figure 8.29 Sector Erase Sequence In QPI Mode (D7h/20h [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
3-byte Address  
23:20 19:16 15:12 11:8 7:4 3:0  
D7h/20h  
IO[3:0]  
Figure 8.30 Sector Erase Sequence In QPI Mode (D7h/20h [EXTADD=1] or 21h, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
Mode 3  
Mode 0  
SCK  
4-byte Address  
31:28 27:24 23:20 19:16 15:12 11:8 7:4 3:0  
D7h/  
20h/21h  
IO[3:0]  
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8.14 BLOCK ERASE OPERATION (BER32K:52h or 4BER32K:5Ch, BER64K:D8h or 4BER64K:DCh)  
A Block Erase (BER) instruction erases a 32/64 Kbyte block. Before the execution of a BER instruction, the Write  
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is reset automatically after the  
completion of a block erase operation.  
52h/D8h (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
52h/D8h (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
5Ch/DCh is followed by a 4-byte address (A31-A0)  
The BER instruction code and three or four address bytes as above are input via SI. Erase operation will start  
immediately after the CE# is pulled high, otherwise the BER instruction will not be executed. The internal control  
logic automatically handles the erase voltage and timing.  
Figure 8.31 Block Erase (64K) Sequence (D8h [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
21  
...  
28  
29  
30  
31  
Mode 3  
Mode 0  
SCK  
3-byte Address  
...  
SI  
3
Instruction = D8h  
2
1
0
23  
22  
High Impedance  
SO  
Figure 8.32 Block Erase (64K) Sequence (D8h [EXTADD=1] or DCh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
28  
...  
36  
37  
38  
39  
Mode 3  
Mode 0  
SCK  
4-byte Address  
...  
SI  
3
Instruction = D8h/DCh  
2
1
0
31  
29  
High Impedance  
SO  
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Figure 8.33 Block Erase (64K) Sequence In QPI Mode (D8h [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
3-byte Address  
23:20 19:16 15:12 11:8 7:4 3:0  
D8h  
IO[3:0]  
Figure 8.34 Block Erase (64K) Sequence In QPI Mode (D8h [EXTADD=1] or DCh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
Mode 3  
Mode 0  
SCK  
4-byte Address  
31:28 27:24 23:20 19:16 15:12 11:8 7:4 3:0  
D8h/DCh  
IO[3:0]  
Figure 8.35 Block Erase (32K) Sequence (52h [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
21  
...  
28  
29  
30  
31  
Mode 3  
Mode 0  
SCK  
3-byte Address  
SI  
...  
3
Instruction = 52h  
2
1
0
23  
22  
High Impedance  
SO  
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Figure 8.36 Block Erase (32K) Sequence (52h [EXTADD=1] or 5Ch, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
28  
...  
36  
37  
38  
39  
Mode 3  
Mode 0  
SCK  
4-byte Address  
...  
SI  
3
Instruction = 52h/5Ch  
2
1
0
31  
29  
High Impedance  
SO  
Figure 8.37 Block Erase (32K) Sequence In QPI Mode (52h [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
3-byte Address  
23:20 19:16 15:12 11:8 7:4 3:0  
52h  
IO[3:0]  
Figure 8.38 Block Erase (32K) Sequence In QPI Mode (52h [EXTADD=1] or 5Ch, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
Mode 3  
Mode 0  
SCK  
4-byte Address  
31:28 27:24 23:20 19:16 15:12 11:8 7:4  
52h/5Ch  
IO[3:0]  
3:0  
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8.15 CHIP ERASE OPERATION (CER, C7h/60h)  
A Chip Erase (CER) instruction erases the entire memory array. Before the execution of CER instruction, the Write  
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL is automatically reset after  
completion of a chip erase operation.  
The CER instruction code is input via the SI. Erase operation will start immediately after CE# is pulled high,  
otherwise the CER instruction will not be executed. The internal control logic automatically handles the erase  
voltage and timing.  
Chip Erase (CER) instruction can be executed only when Block Protection (BP3~BP0) bits are set to 0s. If the BP  
bits are not 0, the CER command is not executed and PROT_E are set.  
Chip Erase (CER) instruction will skip sectors/blocks protected by ASP (DYB bits or PPB bits) and will not set  
PROT_E if sectors/blocks are protected by ASP only.  
Figure 8.39 Chip Erase Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = C7h/60h  
High Impedance  
SI  
SO  
Figure 8.40 Chip Erase Sequence In QPI Mode  
CE#  
0
1
Mode 3  
SCK  
Mode 0  
C7h/60h  
IO[3:0]  
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8.16 WRITE ENABLE OPERATION (WREN, 06h)  
The Write Enable (WREN) instruction is used to set the Write Enable Latch (WEL) bit. The WEL bit is reset to the  
write-protected state after power-up. The WEL bit must be write enabled before any write operation, including  
Sector Erase, Block Erase, Chip Erase, Page Program, Program Information Row, Write Status Register, Write  
Function Register, Set Non-Volatile Read Register, Set Non-Volatile Extended Read Register, and Write Autoboot  
Register operations except for Set Volatile Read Register and Set Volatile Extended Read Register. The WEL bit  
will be reset to the write-protected state automatically upon completion of a write operation. The WREN instruction  
is required before any above operation is executed.  
Figure 8.41 Write Enable Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = 06h  
SI  
High Impedance  
SO  
Figure 8.42 Write Enable Sequence In QPI Mode  
CE#  
0
1
Mode 3  
SCK  
Mode 0  
06h  
IO[3:0]  
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8.17 WRITE DISABLE OPERATION (WRDI, 04h)  
The Write Disable (WRDI) instruction resets the WEL bit and disables all write instructions. The WRDI instruction  
is not required after the execution of a write instruction, since the WEL bit is automatically reset.  
Figure 8.43 Write Disable Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = 04h  
SI  
High Impedance  
SO  
Figure 8.44 Write Disable Sequence In QPI Mode  
CE#  
0
1
Mode 3  
SCK  
Mode 0  
04h  
IO[3:0]  
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8.18 READ STATUS REGISTER OPERATION (RDSR, 05h)  
The Read Status Register (RDSR) instruction provides access to the Status Register. During the execution of a  
program, erase or Write Status Register operation, the RDSR instruction can be used to check the progress or  
completion of an operation by reading the WIP bit.  
Figure 8.45 Read Status Register Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 05h  
tV  
Data Out  
SO  
3
2
1
0
7
6
5
4
Figure 8.46 Read Status Register Sequence In QPI Mode  
CE#  
0
1
2
3
Mode 3  
Mode 0  
SCK  
tV  
IO[3:0]  
05h  
7:4 3:0  
Data Out  
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8.19 WRITE STATUS REGISTER OPERATION (WRSR, 01h)  
The Write Status Register (WRSR) instruction allows the user to enable or disable the block protection and Status  
Register write protection features by writing “0”s or “1”s into the non-volatile BP3, BP2, BP1, BP0, and SRWD bits.  
Also WRSR instruction allows the user to disable or enable quad operation by writing “0” or “1” into the non-volatile  
QE bit.  
Figure 8.47 Write Status Register Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
7
9
6
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
Data In  
SI  
Instruction = 01h  
2
1
0
3
5
4
High Impedence  
SO  
Figure 8.48 Write Status Register Sequence In QPI Mode  
CE#  
0
1
2
3
Mode 3  
Mode 0  
SCK  
IO[3:0]  
01h  
7:4 3:0  
Data In  
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8.20 READ FUNCTION REGISTER OPERATION (RDFR, 48h)  
The Read Function Register (RDFR) instruction provides access to the Function Register. Refer to Table 6.6  
Function Register Bit Definition for more detail.  
Figure 8.49 Read Function Register Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 48h  
tV  
Data Out  
SO  
3
2
1
0
7
6
5
4
Figure 8.50 Read Function Register Sequence In QPI Mode  
CE#  
0
1
2
3
Mode 3  
Mode 0  
SCK  
tV  
IO[3:0]  
48h  
7:4 3:0  
Data Out  
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8.21 WRITE FUNCTION REGISTER OPERATION (WRFR, 42h)  
The Write Function Register (WRFR) instruction allows the user to disable dedicated RESET# pin or ball on 16-pin  
SOIC or 24 ball TFBGA by setting Dedicated RESET# Disable bit to “1”. Also Information Row Lock bits  
(IRL3~IRL0) can be set to “1” individually by WRFR instruction in order to lock Information Row.  
Since Dedicated RESET# Disable bit and IRL bits are OTP, once they are set to “1”, they cannot be set back to “0”  
again  
Figure 8.51 Write Function Register Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
7
9
6
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
Data In  
SI  
Instruction = 42h  
2
1
0
3
5
4
High Impedence  
SO  
Figure 8.52 Write Function Register Sequence In QPI Mode  
CE#  
0
1
2
3
Mode 3  
Mode 0  
SCK  
IO[3:0]  
42h  
7:4 3:0  
Data In  
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8.22 ENTER QUAD PERIPHERAL INTERFACE (QPI) MODE OPERATION (QPIEN, 35h; QPIDI, F5h)  
The Enter Quad Peripheral Interface (QPIEN) instruction, 35h, enables the Flash device for QPI bus operation.  
Upon completion of the instruction, all instructions thereafter will be 4-bit multiplexed input/output until a power  
cycle or an Exit Quad Peripheral Interface (QPIDI) instruction is sent to device.  
The Exit QPI instruction, F5h, resets the device to 1-bit SPI protocol operation. To execute an Exit QPI operation,  
the host drives CE# low, sends the Exit QPI command cycle, then drives CE# high. The device just accepts QPI (2  
clocks) command cycles.  
Figure 8.53 Enter Quad Peripheral Interface (QPI) Mode Sequence  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = 35h  
SI  
High Impedance  
SO  
Figure 8.54 Exit Quad Peripheral Interface (QPI) Mode Sequence  
CE#  
0
1
Mode 3  
Mode 0  
SCK  
F5h  
IO[3:0]  
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8.23 PROGRAM/ERASE SUSPEND & RESUME  
The device allows the interruption of Sector Erase, Block Erase, or Page Program operations to conduct other  
operations. 75h/B0h command for suspend and 7Ah/30h for resume will be used. (SPI/QPI all acceptable) Function  
Register bit2 (PSUS) and bit3 (ESUS) are used to check whether or not the device is in suspend mode.  
Suspend to read ready timing (tSUS): 100µs (TYP)  
Resume to another suspend timing (tRS): 400µs (TYP)  
SUSPEND DURING SECTOR-ERASE OR BLOCK-ERASE (PERSUS 75h/B0h)  
The Suspend command allows the interruption of Sector Erase and Block Erase operations. But Suspend command  
will be ignored during Chip Erase operation. After the Suspend command, other commands include array read  
operation can be accepted.  
But Write Status Register command (01h) and Erase instructions are not allowed during Erase Suspend. Also,  
array read for being erased sector/block is not allowed.  
To execute Erase Suspend operation, the host drives CE# low, sends the Suspend command cycle (75h/B0h),  
then drives CE# high. The Function Register indicates that the Erase has been suspended by setting the ESUS bit  
from “0” to “1”, but the device will not accept another command until it is ready. To determine when the device will  
accept a new command, poll the WIP bit or wait the specified time tSUS. When ESUS bit is set to “1”, the Write  
Enable Latch (WEL) bit clears to “0”.  
SUSPEND DURING PAGE PROGRAMMING (PERSUS 75h/B0h)  
The Suspend command also allows the interruption of all array Program operations. After the Suspend command,  
other commands include array read operation can be accepted can be accepted.  
But Write Status Register instruction (01h) and Program instructions are not allowed during Program Suspend.  
Also, array read for being programmed page is not allowed.  
To execute the Program Suspend operation, the host drives CE# low, sends the Suspend command cycle  
(75h/B0h), then drives CE# high. The Function Register indicates that the programming has been suspended by  
setting the PSUS bit from “0” to “1”, but the device will not accept another command until it is ready. To determine  
when the device will accept a new command, poll the WIP bit or wait the specified time tSUS. When PSUS bit is set  
to “1”, the Write Enable Latch (WEL) bit clears to “0”.  
PROGRAM/ERASE RESUME (PERRSM 7Ah/30h)  
The Program/Erase Resume restarts the Program or Erase command that was suspended, and clears the suspend  
status bit in the Function Register (ESUS or PSUS bits) to “0”. To execute the Program/Erase Resume operation,  
the host drives CE# low, sends the Program/Erase Resume command cycle (7Ah/30h), then drives CE# high. A  
cycle is two nibbles long, most significant nibble first. To issue another Erase Suspend operation after Erase  
Resume operation, Erase Resume to another Erase Suspend delay (400us) is required, but it could require longer  
Erase time to complete Erase operation.  
To determine if the internal, self-timed Write operation completed, poll the WIP bit.  
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Table 8.7 Instructions accepted during Suspend  
Operation  
Instruction Allowed  
Suspended  
Name  
NORD  
Hex Code  
03h  
Operation  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Normal Read Mode  
4NORD  
FRD  
13h  
4-byte Address Normal Read Mode  
Fast Read Mode  
0Bh  
4FRD  
0Ch  
4-byte Address Fast Read Mode  
Fast Read Dual I/O  
FRDIO  
4FRDIO  
FRDO  
BBh  
BCh  
3Bh  
4-byte Address Fast Read Dual I/O  
Fast Read Dual Output  
4FRDO  
FRQIO  
4FRQIO  
FRQO  
3Ch  
4-byte Address Fast Read Dual Output  
Fast Read Quad I/O  
EBh  
ECh  
6Bh  
4-byte Address Fast Read Quad I/O  
Fast Read Quad Output  
4FRQO  
FRDTR  
4FRDTR  
FRDDTR  
4FRDDTR  
FRQDTR  
4FRQDTR  
WREN  
WRDI  
6Ch  
4-byte Address Fast Read Quad Output  
Fast Read DTR Mode  
0Dh  
0Eh  
4-byte Address Fast Read DTR Mode  
Fast Read Dual I/O DTR  
BDh  
BEh  
EDh  
EEh  
06h  
4-byte Address Fast Read Dual I/O DTR  
Fast Read Quad I/O DTR  
4-byte Address Fast Read Quad I/O DTR  
Write Enable  
04hh  
05h  
Write Disable  
RDSR  
Read Status Register  
RDFR  
48h  
Read Function Register  
RDBR  
16h/C8h  
Read Bank Address Register  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
RDRP  
RDERP  
RDID  
61h  
81h  
ABh  
9Fh  
90h  
AFh  
4Bh  
5Ah  
82h  
Read Read Parameters (Volatile)  
Read Extended Read Parameters (Volatile)  
Read Manufacturer and Product ID  
RDJDID  
RDMDID  
RDJDIDQ  
RDUID  
Read Manufacturer and Product ID by JEDEC ID Command  
Read Manufacturer and Device ID  
Read JEDEC ID QPI mode  
Read Unique ID Number  
RDSFDP  
CLERP  
SFDP Read  
Clear Extended Read Register  
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IS25LP256D  
IS25WP256D  
Instruction Allowed  
Operation  
Suspended  
Name  
PERRSM  
Hex Code  
Operation  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Program or Erase  
Erase  
7Ah/30h  
Program/Erase Resume  
SRPV  
SERPV  
WRBRV  
EN4B  
C0/63h  
83h  
Set Read Parameters (Volatile)  
Set Extended Read Parameters (Volatile)  
Write Bank Address Register (Volatile)  
Enter 4-byte Address Mode  
Exit 4-byte Address Mode  
Read PPB  
17h/C5  
B7h  
EX4B  
29h  
RDPPB  
4RDPPB  
RDDYB  
4RDDYB  
RDPWD  
RDPLB  
RDASP  
SECLOCK  
SECUNLOCK  
4SECUNLOCK  
PERSUS  
PP  
FCh  
F2h  
4-byte Address Read PPB  
Read DYB  
FAh  
E0h  
4-byte Address Read DYB  
Read Password  
E7h  
A7h  
Read PPB Lock Bit  
2Bh  
Read ASP  
24h  
Sector Lock  
Erase  
26h  
Sector Unlock  
Erase  
25h  
4-byte Address Sector Unlock  
Program/Erase Suspend  
Serial Input Page Program  
4-byte Address Serial Input Page Program  
Quad Input Page Program  
4-byte Address Quad Input Page Program  
Write DYB  
Erase  
75h/B0h  
02h  
Erase  
Erase  
4PP  
12h  
Erase  
PPQ  
32h/38h  
34h/3Eh  
FBh  
Erase  
4PPQ  
Erase  
WRDYB  
4WRDYB  
Erase  
E0h  
4-byte Address Write DYB  
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8.24 ENTER DEEP POWER DOWN (DP, B9h)  
The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (enter  
into Power-down mode). During this mode, standby current is reduced from Isb1 to Isb2. While in the Power-down  
mode, the device is not active and all Write/Program/Erase instructions are ignored. The instruction is initiated by  
driving the CE# pin low and shifting the instruction code into the device. The CE# pin must be driven high after the  
instruction has been latched, or Power-down mode will not engage. Once CE# pin driven high, the Power-down  
mode will be entered within the time duration of tDP. While in the Power-down mode only the Release from Power-  
down/RDID instruction, which restores the device to normal operation, will be recognized. All other instructions are  
ignored, including the Read Status Register instruction which is always available during normal operation. Ignoring  
all but one instruction makes the Power Down state a useful condition for securing maximum write protection. It is  
available in both SPI and QPI mode.  
Figure 8.55 Enter Deep Power Down Mode Sequence  
CE#  
SCK  
tDP  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SI  
Instruction = B9h  
High Impedance  
SO  
Figure 8.56 Enter Deep Power Down Mode QPI Sequence  
tDP  
CE#  
0
1
Mode 3  
Mode 0  
SCK  
B9h  
IO[3:0]  
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8.25 RELEASE DEEP POWER DOWN (RDPD, ABh)  
The Release Deep Power-down/Read Device ID instruction is a multi-purpose command. To release the device  
from the deep power-down mode, the instruction is issued by driving the CE# pin low, shifting the instruction code  
into the device and driving CE# high.  
Releasing the device from Power-down mode will take the time duration of tRES1 before normal operation is restored  
and other instructions are accepted. The CE# pin must remain high during the tRES1 time duration. If the Release  
Deep Power-down/RDID instruction is issued while an Erase, Program or Write cycle is in progress (WIP=1) the  
instruction is ignored and will not have any effects on the current cycle.  
Figure 8.57 Release Power Down Mode Sequence In SPI Mode  
CE#  
SCK  
tRES1  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SI  
Instruction = ABh  
High Impedance  
SO  
Figure 8.58 Release Power Down Mode Sequence In QPI Mode  
tRES1  
CE#  
0
1
Mode 3  
Mode 0  
SCK  
ABh  
IO[3:0]  
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8.26 SET READ PARAMETERS OPERATION (SRPNV: 65h, SRPV: C0h/63h)  
Set Read Parameter Bits  
This device supports configurable burst length and dummy cycles in both SPI and QPI mode by setting three bits  
(P2, P1, P0) and four bits (P6, P5, P4, P3) within the Read Register, respectively. To set those bits the SRPNV  
and SRPV operation instruction are used. Details regarding burst length and dummy cycles can be found in Table  
6.9, Table 6.10, and Table 6.11. HOLD#/RESET# function selection (P7) bit in the Read Register can be set with  
the SRPNV and SRPV operation as well, in order to select HOLD#/RESET# pin as RESET# or HOLD#.  
For the device with dedicated RESET# pin (or ball), RESET# pin (or ball) will be a separate pin (or ball) and it is  
independent of the P7 bit setting in Read Register.  
SRPNV is used to set the non-volatile Read Register, while SRPV is used to set the volatile Read Register.  
Note: When SRPNV is executed, the volatile Read Register is set as well as the non-volatile Read Register.  
Figure 8.59 Set Read Parameters Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
7
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
Data In  
SI  
Instruction = 65h or C0h/63h  
High Impedence  
2
1
0
3
6
5
4
SO  
Figure 8.60 Set Read Parameters Sequence In QPI Mode  
CE#  
0
1
2
3
Mode 3  
Mode 0  
SCK  
65h or  
C0h/63h  
IO[3:0]  
7:4 3:0  
Data In  
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Read with “8/16/32/64-Byte Wrap Around”  
The device is capable of burst read with wrap around in both SPI and QPI mode. The size of burst length is  
configurable by using P0, P1, and P2 bits in Read Register. P2 bit (Wrap enable) enables the burst mode feature.  
P0 and P1 define the size of burst. Burst lengths of 8, 16, 32, and 64 bytes are supported. By default, address  
increases by one up through the entire array. By setting the burst length, the data being accessed can be limited  
to the length of burst boundary within a 256 byte page. The first output will be the data at the initial address which  
is specified in the instruction. Following data will come out from the next address within the burst boundary. Once  
the address reaches the end of boundary, it will automatically move to the first address of the boundary. CE# high  
will terminate the command.  
For example, if burst length of 8 and initial address being applied is 0h, following byte output will be from address  
00h and continue to 01h,..,07h, 00h, 01h… until CE# terminates the operation. If burst length of 8 and initial address  
being applied is FEh(254d), following byte output will be from address FEh and continue to FFh, F8h, F9h, FAh,  
FBh, FCh, FDh, and repeat from FEh until CE# terminates the operation.  
The commands, “SRPV (65h) or SRPNV (C0h or 63h)”, are used to configure the burst length. If the following data  
input is one of “00h”,”01h”,”02h”, and ”03h”, the device will be in default operation mode. It will be continuous burst  
read of the whole array. If the following data input is one of “04h”,”05h”,”06h”, and ”07h”, the device will set the  
burst length as 8,16,32 and 64, respectively.  
To exit the burst mode, another “C0h or 63h” command is necessary to set P2 to 0. Otherwise, the burst mode will  
be retained until either power down or reset operation. To change burst length, another “C0h or 63h” command  
should be executed to set P0 and P1 (Detailed information in Table 6.9 Burst Length Data). All read commands  
will operate in burst mode once the Read Register is set to enable burst mode.  
Refer to Figure 8.59 and Figure 8.60 for instruction sequence.  
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8.27 SET EXTENDED READ PARAMETERS OPERATION (SERPNV: 85h, SERPV: 83h)  
Set Read Operational Driver Strength  
This device supports configurable Operational Driver Strength in both SPI and QPI modes by setting three bits  
(ODS0, ODS1, ODS2) within the Extended Read Register. To set the ODS bits the SERPNV and SERPV operation  
instructions are required. The device’s driver strength can be reduced as low as 12.50% of full drive strength.  
Details regarding the driver strength can be found in Table 6.14.  
SERPNV is used to set the non-volatile Extended Read register, while SERPV is used to set the volatile Extended  
Read register.  
Notes:  
1. The default driver strength is set to 50%.  
2. When SERPNV is executed, the volatile Read Extended Register is set as well as the non-volatile Read Extended  
Register.  
Figure 8.61 Set Extended Read Parameters Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
7
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
Data In  
SI  
Instruction = 85h/83h  
High Impedence  
2
1
0
3
6
5
4
SO  
Figure 8.62 Set Extended Read Parameters Sequence In QPI Mode  
CE#  
0
1
2
3
Mode 3  
Mode 0  
SCK  
IO[3:0]  
85h/83h  
7:4 3:0  
Data In  
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8.28 READ READ PARAMETERS OPERATION (RDRP, 61h)  
Prior to, or after setting Read Register, the data of the Read Register can be confirmed by the RDRP command.  
The instruction is only applicable for the volatile Read Register, not for the non-volatile Read Register.  
Figure 8.63 Read Read Parameters Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 61h  
tV  
Data Out  
SO  
3
2
1
0
7
6
5
4
Figure 8.64 Read Read Parameters Sequence In QPI Mode  
CE#  
0
1
2
3
Mode 3  
Mode 0  
SCK  
tV  
IO[3:0]  
61h  
7:4 3:0  
Data Out  
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8.29 READ EXTENDED READ PARAMETERS OPERATION (RDERP, 81h)  
Prior to, or after setting Extended Read Register, the data of the Extended Read Register can be confirmed by the  
RDERP command. The instruction is only applicable for the volatile Extended Read Register, not for the non-  
volatile Extended Read Register.  
During the execution of a Program, Erase or Write Non-Volatile Register operation, the RDERP instruction will be  
executed, which can be used to check the progress or completion of an operation by reading the WIP bit.  
Figure 8.65 Read Extended Read Parameters Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 81h  
tV  
Data Out  
SO  
3
2
1
0
7
6
5
4
Figure 8.66 Read Extended Read Parameters Sequence In QPI Mode  
CE#  
0
1
2
3
Mode 3  
Mode 0  
SCK  
tV  
IO[3:0]  
81h  
7:4 3:0  
Data Out  
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8.30 CLEAR EXTENDED READ REGISTER OPERATION (CLERP, 82h)  
A Clear Extended Read Register (CLERP) instruction clears PROT_E and P_ERR error bits in the Extended Read  
Register to “0” when the error bits are set to “1”. Once the error bits are set to “1”, they remains set to “1” until they  
are cleared to “0” with a CLERP command.  
Figure 8.67 Clear Extended Read Register Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = 82h  
SI  
High Impedance  
SO  
Figure 8.68 Clear Extended Read Register Sequence In QPI Mode  
CE#  
0
1
Mode 3  
Mode 0  
SCK  
82h  
IO[3:0]  
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8.31 READ PRODUCT IDENTIFICATION (RDID, ABh)  
The Release from Power-down/Read Device ID instruction is a multi-purpose instruction. It can support both SPI  
and QPI modes. The Read Product Identification (RDID) instruction is for reading out the old style of 8-bit Electronic  
Signature, whose values are shown as the table of Product Identification.  
The RDID instruction code is followed by three dummy bytes, each bit being latched-in on SI during the rising SCK  
edge. Then the Device ID is shifted out on SO with the MSB first, each bit been shifted out during the falling edge  
of SCK. The RDID instruction is ended by driving CE# high. The Device ID (ID7-ID0) outputs repeatedly if additional  
clock cycles are continuously sent to SCK while CE# is at low.  
Table 8.8 Product Identification  
Manufacturer ID  
ISSI Serial Flash  
Instruction  
(MF7-MF0)  
9Dh  
ABh  
90h  
9Fh  
Memory Type + Capacity  
(ID15-ID0)  
Part Number  
Device ID (ID7-ID0)  
IS25LP256D  
18h  
18h  
6019h  
7019h  
IS25WP256D  
Figure 8.69 Read Product Identification Sequence  
CE#  
0
1
...  
7
8
9
...  
31  
32  
33  
...  
39  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = ABh  
3 Dummy Bytes  
Data Out  
tV  
Device ID  
(ID7-ID0)  
SO  
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Figure 8.70 Read Product Identification Sequence In QPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
9
Mode 3  
Mode 0  
SCK  
tV  
Device ID  
(ID7-ID0)  
ABh  
6 Dummy Cycles  
IO[3:0]  
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8.32 READ PRODUCT IDENTIFICATION BY JEDEC ID OPERATION (RDJDID, 9Fh; RDJDIDQ, AFh)  
The JEDEC ID READ instruction allows the user to read the manufacturer and product ID of devices. Refer to Table  
8.8 Product Identification for Manufacturer ID and Device ID. After the JEDEC ID READ command (9Fh in SPI  
mode, AFh in QPI mode) is input, the Manufacturer ID is shifted out MSB first followed by the 2-byte electronic ID  
(ID15-ID0) that indicates Memory Type and Capacity, one bit at a time. Each bit is shifted out during the falling  
edge of SCK. If CE# stays low after the last bit of the 2-byte electronic ID, the Manufacturer ID and 2-byte electronic  
ID will loop until CE# is pulled high.  
Figure 8.71 Read Product Identification by JEDEC ID Read Sequence In SPI Mode  
CE#  
0
1
...  
7
8
9
...  
15  
16  
17  
...  
23  
24  
25  
...  
31  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 9Fh  
tV  
Manufacturer ID  
(MF7-MF0)  
Capacity  
(ID7-ID0)  
Memory Type  
(ID15-ID8)  
SO  
Figure 8.72 RDJDID and RDJDIDQ (Read JEDEC ID) Sequence In QPI MOde  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
tV  
AFh  
IO[3:0]  
7:4 3:0  
MF7-MF0  
7:4 3:0  
ID15-ID8  
7:4 3:0  
ID7-ID0  
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8.33 READ DEVICE MANUFACTURER AND DEVICE ID OPERATION (RDMDID, 90h)  
The Read Device Manufacturer and Device ID (RDMDID) instruction allows the user to read the Manufacturer and  
product ID of devices. Refer to Table 8.8 Product Identification for Manufacturer ID and Device ID. The RDMDID  
instruction code is followed by two dummy bytes and one byte address (A7~A0), each bit being latched-in on SI  
during the rising edge of SCK. If one byte address is initially set as A0 = 0, then the Manufacturer ID is shifted out  
on SO with the MSB first followed by the device ID (ID7- ID0). Each bit is shifted out during the falling edge of SCK.  
If one byte address is initially set as A0 = 1, then Device ID7-ID0 will be read first followed by the Manufacturer ID.  
The Manufacturer and Device ID can be read continuously alternating between the two until CE# is driven high.  
Figure 8.73 Read Product Identification by RDMDID Sequence In SPI Mode  
CE#  
0
1
...  
7
8
9
...  
31  
32  
33  
...  
39  
40  
41  
...  
47  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 90h  
3-byte Address  
tV  
Device ID  
(ID7-ID0)  
Manufacturer ID  
(MF7-MF0)  
SO  
Notes:  
1. ADDRESS A0 = 0, will output the 1-byte Manufacturer ID (MF7-MF0) 1-byte Device ID (ID7-ID0)  
ADDRESS A0 = 1, will output the 1-byte Device ID (ID7-ID0) 1-byte Manufacturer ID (MF7-MF0)  
2. The Manufacturer and Device ID can be read continuously and will alternate from one to the other until CE# pin is  
pulled high.  
Figure 8.74 Read Product Identification by RDMDID Sequence In QPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
Mode 3  
Mode 0  
SCK  
tV  
IO[3:0]  
90h  
Instruction  
23:20 19:16 15:12 11:8 7:4 3:0  
3-byte Address  
7:4 3:0  
7:4 3:0  
Manufacturer  
ID (MF7-MF0)  
Device ID  
(ID7-ID0)  
Notes:  
1. ADDRESS A0 = 0, will output the 1-byte Manufacturer ID (MF7-MF0) 1-byte Device ID (ID7-ID0)  
ADDRESS A0 = 1, will output the 1-byte Device ID (ID7-ID0) 1-byte Manufacturer ID (MF7-MF0)  
2. The Manufacturer and Device ID can be read continuously and will alternate from one to the other until CE# pin is  
pulled high.  
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8.34 READ UNIQUE ID NUMBER (RDUID, 4Bh)  
The Read Unique ID Number (RDUID) instruction accesses a factory-set read-only 16-byte number that is unique  
to the device. The ID number can be used in conjunction with user software methods to help prevent copying or  
cloning of a system. The RDUID instruction is instated by driving the CE# pin low and shifting the instruction code  
(4Bh) followed by 3 address bytes and dummy cycles (configurable, default is 8 clocks). After which, the 16-byte  
ID is shifted out on the falling edge of SCK as shown below.  
As a result, the sequence of RDUID instruction is same as FAST READ. RDUID sequence in QPI mode is also  
same as FAST READ sequence in QPI mode except for the instruction code. Refer to the FAST READ operation  
in QPI mode.  
Note: 16 bytes of data will repeat as long as CE# is low and SCK is toggling.  
Figure 8.75 RDUID Sequence In SPI Mode  
CE#  
0
1
...  
7
8
9
...  
31  
32  
33  
...  
39  
40  
41  
...  
47  
...  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 4Bh  
3 Byte Address  
Dummy Cycles  
tV  
SO  
Data Out  
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.  
Table 8.9 Unique ID Addressing  
A[23:16]  
XXh  
A[15:9]  
XXh  
A[8:4]  
00h  
A[3:0]  
0h Byte address  
1h Byte address  
2h Byte address  
XXh  
XXh  
00h  
XXh  
XXh  
00h  
XXh  
XXh  
00h  
XXh  
XXh  
00h  
Fh Byte address  
Note: XX means “don’t care”.  
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8.35 READ SFDP OPERATION (RDSFDP, 5Ah)  
The Serial Flash Discoverable Parameters (SFDP) standard provides a consistent method of describing the  
functions and features of serial Flash devices in a standard set of internal parameter tables. These parameters can  
be interrogated by host system software to enable adjustments needed to accommodate divergent features from  
multiple vendors. For more details please refer to the JEDEC Standard JESD216A (Serial Flash Discoverable  
Parameters).  
The sequence of issuing RDSFDP instruction is same as FAST_READ: CE# goes low Send RDSFDP instruction  
(5Ah) Send 3 address bytes on SI pin Send dummy cycles (configurable, default is 8 clocks) on SI pin   
Read SFDP code on SO End RDSFDP operation by driving CE# high at any time during data out. Refer to ISSI’s  
Application note for SFDP table. The data at the addresses that are not specified in SFDP table are undefined.  
The sequence of RDSFDP instruction is same as FAST READ except for the instruction code. RDSFDP QPI  
sequence is also same as FAST READ QPI except for the instruction code. Refer to the FAST READ QPI operation.  
Figure 8.76 RDSFDP (Read SFDP) Sequence  
CE#  
0
1
...  
7
8
9
...  
31  
32  
33  
...  
39  
40  
41  
...  
47  
...  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 5Ah  
3 Byte Address  
Dummy Cycles  
tV  
SO  
Data Out  
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.  
8.36 NO OPERATION (NOP, 00h)  
The No Operation command solely cancels a Reset Enable command and has no impact on any other commands.  
It is available in both SPI and QPI modes. To execute a NOP, the host drives CE# low, sends the NOP command  
cycle (00H), then drives CE# high.  
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8.37 SOFTWARE RESET (RESET-ENABLE (RSTEN, 66h) AND RESET (RST, 99h)) AND HARDWARE RESET  
The Software Reset operation is used as a system reset that puts the device in normal operating mode. During the  
Reset operation, the value of volatile registers will default back to the value in the corresponding non-volatile  
register. However, the volatile FREEZE bit and the volatile PPB Lock bit in the PPB Lock Register are not changed  
by Software Reset. In all other respects, Software Reset is the same as Hardware Reset. This operation consists  
of two commands: Reset-Enable (RSTEN) and Reset (RST). The operation requires the Reset-Enable command  
followed by the Reset command. Any command other than the Reset command after the Reset-Enable command  
will disable the Reset-Enable.  
Execute the CE# pin low sends the Reset-Enable command (66h), and drives CE# high. Next, the host drives  
CE# low again, sends the Reset command (99h), and pulls CE# high.  
Only if the RESET# pin is enabled, Hardware Reset function is available.  
For the device with HOLD#/RESET#, the RESET# pin will be solely applicable in SPI mode and when the QE bit =  
“0”. For the device with dedicated RESET# (Dedicated RESET# Disable bit is “0” in Function Register), the RESET#  
pin is always applicable regardless of the QE bit value in Status Register and HOLD#/RESET# selection bit (P7) in  
Read Register in SPI/QPI mode.  
In order to activate Hardware Reset, the RESET# pin (or ball) must be driven low for a minimum period of tRESET  
(100ns). Drive RESET# low for a minimum period of tRESET will interrupt any on-going internal and external  
operations, release the device from deep power down mode1, disable all input signals, force the output pin enter a  
state of high impedance, and reset all the read parameters.  
The required wait time after activating a HW Reset before the device will accept another instruction is tHWRST of  
35us.  
The Software/Hardware Reset during an active Program or Erase operation aborts the operation, which can result  
in corrupting or losing the data of the targeted address range. Depending on the prior operation, the reset timing  
may vary. Recovery from a Write operation will require more latency than recovery from other operations.  
Note1: The Status and Function Registers remain unaffected.  
Figure 8.77 Software Reset Enable and Software Reset Sequence (RSTEN, 66h + RST, 99h)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
Instruction = 66h  
High Impedance  
Instruction = 99h  
SI  
SO  
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Figure 8.78 Software Reset Enable and Software Reset QPI Sequence (RSTEN, 66h + RST, 99h)  
CE#  
0
1
0
1
Mode 3  
Mode 0  
SCK  
66h  
99h  
IO[3:0]  
8.38 SECURITY INFORMATION ROW  
The security Information Row is comprised of an additional 4 x 256 bytes of programmable information. The security  
bits can be reprogrammed by the user. Any program security instruction issued while an erase, program or write  
cycle is in progress is rejected without having any effect on the cycle that is in progress.  
Table 8.10 Information Row Valid Address Range  
Address Assignment  
A[23:16]  
00h  
A[15:8]  
00h  
A[7:0]  
IRL0 (Information Row Lock0)  
Byte address  
Byte address  
Byte address  
Byte address  
IRL1  
IRL2  
IRL3  
00h  
10h  
00h  
20h  
00h  
30h  
Bit 7~4 of the Function Register is used to permanently lock the programmable memory array.  
When Function Register bit IRLx = “0”, the 256 bytes of the programmable memory array can be programmed.  
When Function Register bit IRLx = “1”, the 256 bytes of the programmable memory array function as read only.  
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8.39 INFORMATION ROW ERASE OPERATION (IRER, 64h)  
Information Row Erase (IRER) instruction erases the data in the Information Row x (x: 0~3) array. Prior to the  
operation, the Write Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is  
automatically reset after the completion of the operation.  
The sequence of IRER operation: Pull CE# low to select the device Send IRER instruction code Send three  
address bytes Pull CE# high. CE# should remain low during the entire instruction sequence. Once CE# is pulled  
high, Erase operation will begin immediately. The internal control logic automatically handles the erase voltage and  
timing.  
Figure 8.79 IRER (Information Row Erase) Sequence  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
21  
...  
28  
29  
30  
31  
Mode 3  
Mode 0  
SCK  
3-byte Address  
...  
SI  
3
Instruction = 64h  
2
1
0
23  
22  
High Impedance  
SO  
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8.40 INFORMATION ROW PROGRAM OPERATION (IRP, 62h)  
The Information Row Program (IRP) instruction allows up to 256 bytes data to be programmed into the memory in  
a single operation. Before the execution of IRP instruction, the Write Enable Latch (WEL) must be enabled through  
a Write Enable (WREN) instruction.  
The IRP instruction code, three address bytes and program data (1 to 256 bytes) should be sequentially input.  
Three address bytes has to be input as specified in the Table 8.10 Information Row Valid Address Range. Program  
operation will start once the CE# goes high, otherwise the IRP instruction will not be executed. The internal control  
logic automatically handles the programming voltages and timing. During a program operation, all instructions will  
be ignored except the RDSR instruction. The progress or completion of the program operation can be determined  
by reading the WIP bit. If the WIP bit is “1”, the program operation is still in progress. If WIP bit is “0”, the program  
operation has completed.  
If more than 256 bytes data are sent to a device, the address counter rolls over within the same page. The  
previously latched data are discarded and the last 256 bytes data are kept to be programmed into the page. The  
starting byte can be anywhere within the page. When the end of the page is reached, the address will wrap around  
to the beginning of the same page. If the data to be programmed are less than a full page, the data of all other  
bytes on the same page will remain unchanged.  
Note: A program operation can alter “1”s into “0”s, but an erase operation is required to change “0”s back to “1”s. A  
byte cannot be reprogrammed without first erasing the corresponding Information Row array which is one of  
IR0~3.  
Figure 8.80 IRP (Information Row Program) Sequence  
CE#  
0
1
...  
7
8
9
...  
31  
32  
33  
...  
39  
...  
...  
...  
Mode 3  
Mode 0  
SCK  
3-byte Address  
Data In 1  
Data In 256  
...  
SI  
...  
...  
6
0
7
0
0
Instruction = 62h  
7
23  
22  
High Impedance  
SO  
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8.41 INFORMATION ROW READ OPERATION (IRRD, 68h)  
The IRRD instruction is used to read data from Information Row.  
The IRRD instruction code is followed by three address bytes (A23 - A0) and dummy cycles (configurable, default  
is 8 clocks), transmitted via the SI line, with each bit latched-in during the rising edge of SCK. Then the first data  
byte addressed is shifted out on the SO line, with each bit shifted out at a maximum frequency fCT, during the falling  
edge of SCK.  
The address is automatically incremented by one after each byte of data is shifted out. Once the address reaches  
the last address of each 256 byte Information Row, the next address will not be valid and the data of the address  
will be garbage data. It is recommended to repeat four times IRRD operation that reads 256 byte with a valid starting  
address of each Information Row in order to read all data in the 4 x 256 byte Information Row array. The IRRD  
instruction is terminated by driving CE# high (VIH).  
If an IRRD instruction is issued while an Erase, Program or Write cycle is in process (WIP=1) the instruction is  
ignored and will not have any effects on the current cycle  
The sequence of IRRD instruction is same as Fast Read except for the instruction code. IRRD QPI sequence is  
same as Fast Read QPI except for the instruction code. Refer to the Fast Read QPI operation.  
The maximum operating clock frequency for the IRRD operation is the same with Fast Read Operation.  
Figure 8.81 IRRD (Information Row Read) Sequence  
CE#  
0
1
...  
7
8
9
...  
31  
32  
33  
...  
39  
40  
41  
...  
47  
...  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 68h  
3 Byte Address  
Dummy Cycles  
tV  
SO  
Data Out  
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.  
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8.42 FAST READ DTR MODE OPERATION (FRDTR, 0Dh or 4FRDTR, 0Eh)  
The FRDTR/4FRDTR instruction is for doubling the data in and out. Signals are triggered on both rising and falling  
edge of clock. The address is latched on both rising and falling edge of SCK, and data of each bit shifts out on both  
rising and falling edge of SCK at a maximum frequency. The 2-bit address can be latched-in at one clock, and 2-  
bit data can be read out at one clock, which means one bit at the rising edge of clock, the other bit at the falling  
edge of clock.  
The first address byte can be at any location. The address is automatically increased to the next higher address  
after each byte of data is shifted out, so the whole memory can be read out in a single FRDTR/4FRDTR instruction.  
The address counter rolls over to 0 when the highest address is reached.  
0Dh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
0Dh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
0Eh is followed by a 4-byte address (A31-A0)  
The sequence of issuing FRDTR/4FRDTR instruction is: CE# goes low Sending FRDTR/4FRDTR instruction  
code (1bit per clock) 3-byte or 4-byte address on SI (2-bit per clock) as above 8 dummy clocks (configurable,  
default is 8 clocks) on SI Data out on SO (2-bit per clock) End FRDTR/4FRDTR operation via driving CE#  
high at any time during data out.  
While a Program/Erase/Write Status Register cycle is in progress, FRDTR/4FRDTR instruction will be rejected  
without any effect on the current cycle.  
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Figure 8.82 FRDTR Sequence (0Dh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
...  
19  
20  
21  
Mode 3  
Mode 0  
SCK  
3-byte Address  
SI  
...  
Instruction = 0Dh  
23 22 21  
19  
0
20  
18  
17  
High Impedance  
SO  
CE#  
SCK  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
...  
tV  
8 Dummy Cycles  
SI  
Data Out 1  
Data Out 2  
Data Out ...  
...  
6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5  
SO  
7
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.  
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Figure 8.83 FRDTR Sequence (0Dh [EXTADD=1] or 0Eh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
...  
27  
28  
29  
Mode 3  
Mode 0  
SCK  
4-byte Address  
SI  
...  
Instruction = 0Dh/0Eh  
31 30 29 28 27 26 25  
0
High Impedance  
SO  
CE#  
SCK  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
...  
tV  
8 Dummy Cycles  
SI  
Data Out 1  
Data Out 2  
Data Out ...  
...  
6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5  
SO  
7
Note: Dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy Cycles.  
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FAST READ DTR MODE OPERATION IN QPI MODE (FRDTR, 0Dh or 4FRDTR, 0Eh)  
The FRDTR/4FRDTR instruction in QPI mode utilizes all four IO lines to input the instruction code so that only two  
clocks are required, while the FRDTR/4FRDTR instruction in SPI mode requires that the byte-long instruction code  
is shifted into the device only via IO0 (SI) line in eight clocks. In addition, subsequent address and data out are  
shifted in/out via all four IO lines unlike the FRDTR/4FRDTR instruction. Eventually this operation is same as the  
FRQDTR/4FRQDTR in QPI mode, but the only different thing is that AX mode is not available in the  
FRDTR/4FRDTR operation in QPI mode.  
0Dh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
0Dh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
0Eh is followed by a 4-byte address (A31-A0)  
The sequence of issuing FRDTR/4FRDTR QPI instruction is: CE# goes low Sending FRDTR/4FRDTR QPI  
instruction (4-bit per clock) 24-bit or 32-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) as above  
6 dummy clocks (configurable, default is 6 clocks) Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock)  
End FRDTR/4FRDTR QPI operation by driving CE# high at any time during data out.  
If the FRDTR/4FRDTR instruction in QPI mode is issued while an Erase, Program or Write cycle is in process is in  
progress (WIP=1), the instruction will be rejected without any effect on the current cycle.  
Figure 8.84 FRDTR Sequence In QPI Mode ( (0Dh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
...  
Mode 3  
Mode 0  
SCK  
IO0  
6 Dummy Cycles  
Data Data  
Out Out  
Instruction  
= 0Dh  
tV  
3-byte Address  
...  
...  
...  
...  
4
5
6
7
0
1
2
3
20 16 12 8  
4
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
IO1  
IO2  
21 17 13 9  
5
22 18 14 10 6  
23 19 15 11 7  
IO3  
Notes:  
1. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
2. Sufficient dummy cycles are required to avoid I/O contention.  
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Figure 8.85 FRDTR Sequence In QPI Mode (0Dh [EXTADD=1] or 0Eh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
...  
Mode 3  
Mode 0  
SCK  
IO0  
6 Dummy Cycles  
Data  
Instruction  
= 0Dh/0Eh  
tV  
4-byte Address  
Out  
...  
...  
...  
...  
4
5
6
7
0
1
2
3
28 24 20 16 12 8  
4
5
0
1
2
3
4
0
1
2
3
IO1  
IO2  
5
6
7
29 25 21 17 13 9  
30 26 22 18 14 10 6  
31 27 23 19 15 11 7  
IO3  
Notes:  
1. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
2. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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8.43 FAST READ DUAL IO DTR MODE OPERATION (FRDDTR, BDh or 4FRDDTR, BEh)  
The FRDDTR/4FRDDTR instruction enables Double Transfer Rate throughput on dual I/O of the device in read  
mode. The address (interleave on dual I/O pins) is latched on both rising and falling edge of SCK, and the data  
(interleave on dual I/O pins) shift out on both rising and falling edge of SCK at a maximum frequency. The 4-bit  
address can be latched-in at one clock, and 4-bit data can be read out at one clock, which means two bits at the  
rising edge of clock, the other two bits at the falling edge of clock.  
The first address byte can be at any location. The address is automatically increased to the next higher address  
after each byte of data is shifted out, so the whole memory can be read out with a single FRDDTR/4FRDDTR  
instruction. The address counter rolls over to 0 when the highest address is reached. Once writing  
FRDDTR/4FRDDTR instruction, the following address/dummy/data out will perform as 4-bit instead of previous 1-  
bit.  
BDh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
BDh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
BEh is followed by a 4-byte address (A31-A0)  
The sequence of issuing FRDDTR/4FRDDTR instruction is: CE# goes low Sending FRDDTR/4FRDDTR  
instruction (1-bit per clock) 24-bit or 32-bit address interleave on IO1 & IO0 (4-bit per clock) as above 4 dummy  
clocks (configurable, default is 4 clocks) on IO1 & IO0 Data out interleave on IO1 & IO0 (4-bit per clock) End  
FRDDTR/4FRDDTR operation via pulling CE# high at any time during data out (Please refer to Figures 8.86 and  
8.87 for 2 x I/O Double Transfer Rate Read Mode Timing Waveform).  
If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation  
mode which enables subsequent FRDDTR/4FRDDTR execution skips command code. It saves cycles as  
described in Figures 8.88 and 8.89. When the code is different from AXh (where X is don’t care), the device exits  
the AX read operation. After finishing the read operation, device becomes ready to receive a new command.  
If the FRDDTR/4FRDDTR instruction is issued while an Erase, Program or Write cycle is in process is in progress  
(WIP=1), the instruction will be rejected without any effect on the current cycle.  
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Figure 8.86 FRDDTR Sequence (BDh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
...  
13  
14  
Mode 3  
Mode 0  
SCK  
3-byte Address  
4 Dummy Cycles  
IO0  
IO1  
...  
Instruction = BDh  
22 20 18 16 14 12 10  
0
6
4
Mode Bits  
High Impedance  
...  
23 21 19 17 15 13 11  
1
7
5
CE#  
SCK  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
...  
tV  
Data Out Data Out  
Data Out Data Out  
Data Out  
Data Out  
IO0  
IO1  
...  
...  
2
0
6
4
2
0
6
4
2
0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0  
Mode Bits  
3
1
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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Figure 8.87 FRDDTR Sequence (BDh [EXTADD=1] or BEh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
...  
17  
18  
Mode 3  
Mode 0  
SCK  
4-byte Address  
4 Dummy Cycles  
IO0  
IO1  
...  
Instruction = BDh/BEh  
High Impedance  
30 28 26 24 22 20 18  
0 6  
4
Mode Bits  
...  
31 29 27 25 23 21 19  
1 7  
5
CE#  
SCK  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
...  
tV  
Data Out Data Out  
Data Out Data Out  
Data Out  
Data Out  
IO0  
IO1  
...  
...  
2
0
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0  
Mode Bits  
3
1
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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Figure 8.88 FRDDTR AX Read Sequence (BDh [EXTADD=0], 3-byte address)  
CE#  
...  
0
1
2
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
...  
Mode 3  
Mode 0  
SCK  
IO0  
4 Dummy Cycles  
tV  
Data Out Data Out  
Data Out  
3-byte Address  
...  
...  
...  
...  
22 20 18 16 14 12 10  
0 6 4 2 0  
Mode Bits  
6 4 2 0 6 4 2 0 6 4 2 0  
IO1  
7 5 3 1 7 5 3 1 7 5 3  
1
23 21 19 17 15 13 11  
1 7 5 3 1  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the  
mode bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
Figure 8.89 FRDDTR AX Read Sequence (BDh [EXTADD=1] or BEh, 4-byte address)  
CE#  
...  
0
1
2
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
...  
Mode 3  
Mode 0  
SCK  
IO0  
4 Dummy Cycles  
tV  
Data Out Data Out  
Data Out  
4-byte Address  
...  
...  
...  
...  
30 28 26 24 22 20 18  
0 6 4 2 0  
Mode Bits  
6 4 2 0 6 4 2 0 6 4 2 0  
IO1  
7 5 3 1 7 5 3 1 7 5 3  
1
31 29 27 25 23 21 19  
1 7 5 3 1  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the  
mode bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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8.44 FAST READ QUAD I/O DTR MODE OPERATION IN SPI MODE (FRQDTR, EDh or 4FRQDTR, EEh)  
The FRQDTR/4FRQDTR instruction enables Double Transfer Rate throughput on quad I/O of the device in read  
mode.  
A Quad Enable (QE) bit of Status Register must be set to "1" before sending the Fast Read Quad I/O DTR  
instruction.  
The address (interleave on 4 I/O pins) is latched on both rising and falling edge of SCK, and data (interleave on 4  
I/O pins) shift out on both rising and falling edge of SCK at a maximum frequency. The 8-bit address can be latched-  
in at one clock, and 8-bit data can be read out at one clock, which means four bits at the rising edge of clock, the  
other four bits at the falling edge of clock.  
The first address byte can be at any location. The address is automatically increased to the next higher address  
after each byte data is shifted out, so the whole memory can be read out with a single FRQDTR/4FRQDTR instruc-  
tion. The address counter rolls over to 0 when the highest address is reached. Once writing FRQDTR/4FRQDTR  
instruction, the following address/dummy/data out will perform as 8-bit instead of previous 1-bit.  
EDh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
EDh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
EEh is followed by a 4-byte address (A31-A0)  
The sequence of issuing FRQDTR/4FRQDTR instruction is: CE# goes low Sending FRQDTR/4FRQDTR  
instruction (1-bit per clock) 24-bit or 32-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) as above  
6 dummy clocks (configurable, default is 6 clocks) Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock)  
End FRQDTR/4FRQDTR operation by driving CE# high at any time during data out.  
If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation  
mode which enables subsequent FRQDTR/4FRQDTR execution skips command code. It saves cycles as  
described in Figures 8.92 and 8.93. When the code is different from AXh (where X is don’t care), the device exits  
the AX read operation. After finishing the read operation, device becomes ready to receive a new command.  
If the FRQDTR/4FRQDTR instruction is issued while an Erase, Program or Write cycle is in process is in progress  
(WIP=1), the instruction will be rejected without any effect on the current cycle.  
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Figure 8.90 FRQDTR Sequence In SPI Mode (EDh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
Mode 3  
Mode 0  
SCK  
IO0  
6 Dummy Cycles  
3-byte Address  
Instruction = EDh  
High Impedance  
20 16 12 8  
4
0
4
0
1
IO1  
IO2  
21 17 13 9  
5
1
2
3
5
6
7
22 18 14 10 6  
23 19 15 11 7  
2
3
IO3  
Mode Bits  
CE#  
SCK  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
...  
Data Data Data Data Data Data Data Data Data Data  
Out Out Out Out Out Out Out Out Out Out  
tV  
IO0  
...  
...  
...  
...  
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
IO1  
IO2  
IO3  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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Figure 8.91 FRQDTR Sequence In SPI Mode (EDh [EXTADD=1] or EEh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
Mode 3  
Mode 0  
SCK  
IO0  
6 Dummy Cycles  
4-byte Address  
Instruction = EDh/EEh  
High Impedance  
28 24 20 16 12 8  
4
5
0
1
4
0
1
IO1  
IO2  
29 25 21 17 13 9  
5
6
7
30 26 22 18 14 10 6  
31 27 23 19 15 11 7  
2
3
2
3
IO3  
Mode Bits  
CE#  
SCK  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
...  
Data Data Data Data Data Data Data Data Data Data  
Out Out Out Out Out Out Out Out Out Out  
tV  
IO0  
...  
...  
...  
...  
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
IO1  
IO2  
IO3  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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Figure 8.92 FRQDTR AX Read Sequence (EDh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
...  
Mode 3  
Mode 0  
SCK  
IO0  
Data Data Data Data  
Out Out Out Out  
6 Dummy Cycles  
3-byte Address  
tV  
...  
...  
...  
...  
20 16 12 8  
4
0
4
0
1
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
IO1  
IO2  
21 17 13 9  
5
1
2
3
5
6
7
22 18 14 10 6  
23 19 15 11 7  
2
3
IO3  
Mode Bits  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the  
mode bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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Figure 8.93 FRQDTR AX Read Sequence (EDh [EXTADD=1] or EEh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
...  
Mode 3  
Mode 0  
SCK  
IO0  
Data Data Data Data  
Out Out Out Out  
6 Dummy Cycles  
4-byte Address  
tV  
...  
...  
...  
...  
28 24 20 16 12 8  
4
5
0
4
0
1
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
IO1  
IO2  
29 25 21 17 13 9  
1
2
3
5
6
7
30 26 22 18 14 10 6  
31 27 23 19 15 11 7  
2
3
IO3  
Mode Bits  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it will keep executing the AX read mode (without command). When the  
mode bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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FAST READ QUAD IO DTR OPERATION IN QPI MODE (FRQDTR, EDh OR 4FRQDTR, EEh)  
The FRQDTR/4FRQDTR instruction in QPI mode utilizes all four IO lines to input the instruction code so that only  
two clocks are required, while the FRQDTR/4FRQDTR instruction in SPI mode requires that the byte-long  
instruction code is shifted into the device only via IO0 line in eight clocks. As a result, 6 command cycles will be  
reduced by the FRQDTR/4FRQDTR instruction in QPI mode. In addition, subsequent address and data out are  
shifted in/out via all four IO lines like the FRQDTR/4FRQDTR instruction. In fact, except for the command cycle,  
the FRQDTR/4FRQDTR operation in QPI mode is exactly same as the FRQDTR/4FRQDTR operation in SPI mode.  
It is not required to set QE bit to “1”.before Fast Read Quad I/O DTR instruction in QPI mode.  
EDh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
EDh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
EEh is followed by a 4-byte address (A31-A0)  
The sequence of issuing FRQDTR/4FRQDTR instruction is: CE# goes low Sending FRQDTR/4FRQDTR  
instruction (4-bit per clock) 24-bit or 32-bit address interleave on IO3, IO2, IO1 & IO0 (8-bit per clock) as above  
6 dummy clocks (configurable, default is 6 clocks) Data out interleave on IO3, IO2, IO1 & IO0 (8-bit per clock)  
End FRQDTR/4FRQDTR operation by driving CE# high at any time during data out.  
If AXh (where X is don’t care) is input for the mode bits during dummy cycles, the device will enter AX read operation  
mode which enables subsequent FRQDTR/4FRQDTR in QPI mode execution skips command code. When the  
code is different from AXh (where X is don’t care), the device exits the AX read operation. After finishing the read  
operation, device becomes ready to receive a new command.  
If the FRQDTR/4FRQDTR instruction in QPI mode is issued while an Erase, Program or Write cycle is in process  
is in progress (WIP=1), the instruction will be rejected without any effect on the current cycle.  
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Figure 8.94 FRQDTR Sequence In QPI Mode (EDh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
...  
Mode 3  
Mode 0  
SCK  
IO0  
6 Dummy Cycles  
Data Data  
Out Out  
Instruction  
= EDh  
tV  
3-byte Address  
...  
...  
...  
...  
4
5
6
7
0
1
2
3
20 16 12 8  
4
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
IO1  
IO2  
21 17 13 9  
5
22 18 14 10 6  
23 19 15 11 7  
IO3  
Mode Bits  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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Figure 8.95 FRQDTR Sequence In QPI Mode (EDh [EXTADD=1] or EEh, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
...  
Mode 3  
Mode 0  
SCK  
IO0  
6 Dummy Cycles  
Data  
Instruction  
= EDh/EEh  
tV  
4-byte Address  
Out  
...  
...  
...  
...  
4
5
6
7
0
1
2
3
28 24 20 16 12 8  
4
5
0
1
2
3
4
5
6
7
0
1
2
3
4
0
1
2
3
IO1  
IO2  
5
6
7
29 25 21 17 13 9  
30 26 22 18 14 10 6  
31 27 23 19 15 11 7  
IO3  
Mode Bits  
Notes:  
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode  
bits are different from AXh, the device exits the AX read operation.  
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.  
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles  
are same, then X should be Hi-Z.  
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8.45 SECTOR LOCK/UNLOCK FUNCTIONS  
SECTOR UNLOCK OPERATION (SECUNLOCK, 26h or 4SECUNLOCK, 25h)  
The Sector Unlock command allows the user to select a specific sector to allow program and erase operations.  
This instruction is effective when the blocks are designated as write-protected through the BP0-BP3 bits in the  
Status Register and TBS bit in the Function Register. Only one sector can be enabled at any time. To enable a  
different sector, a previously enabled sector must be disabled by executing a Sector Lock command.  
26h (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
26h (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
25h is followed by a 4-byte address (A31-A0)  
The instruction code is followed by a 24-bit or 32-bit address specifying the target sector as above, but A0 through  
A11 are not decoded. The remaining sectors within the same block remain as read-only.  
Figure 8.96 Sector Unlock Sequence In SPI Mode (26h [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
21  
...  
28  
29  
30  
31  
Mode 3  
Mode 0  
SCK  
3-byte Address  
...  
SI  
Instruction = 26h  
3
2
1
0
23  
22  
High Impedance  
SO  
Figure 8.97 Sector Unlock Sequence In SPI Mode (26h [EXTADD=1] or 25h, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
29  
...  
36  
37  
38  
39  
Mode 3  
Mode 0  
SCK  
4-byte Address  
...  
SI  
Instruction = 26h/25h  
High Impedance  
3
2
1
0
31  
30  
SO  
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Figure 8.98 Sector Unlock Sequence In QPI Mode (26h [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction  
26h  
3-byte Address  
23:20 19:16 15:12 11:8 7:4 3:0  
IO[3:0]  
Figure 8.99 Sector Unlock Sequence In QPI Mode (26h [EXTADD=1] or 25h, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
Mode 3  
Mode 0  
SCK  
4-byte Address  
31:28 27:24 23:20 19:16 15:12 11:8 7:4  
26h/25h  
IO[3:0]  
3:0  
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SECTOR LOCK OPERATION (SECLOCK, 24h)  
The Sector Lock command relocks a sector that was previously unlocked by the Sector Unlock command. The  
instruction code does not require an address to be specified, as only one sector can be enabled at a time. The  
remaining sectors within the same block remain in read-only mode.  
Figure 8.100 Sector Lock Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = 24h  
SI  
High Impedance  
SO  
Figure 8.101 Sector Lock Sequence In QPI Mode  
CE#  
0
1
Mode 3  
SCK  
Mode 0  
24h  
IO[3:0]  
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8.46 AUTOBOOT  
SPI devices normally require 32 or more cycles of command and address shifting to initiate a read command. And,  
in order to read boot code from an SPI device, the host memory controller or processor must supply the read  
command from a hardwired state machine or from some host processor internal ROM code.  
Parallel NOR devices need only an initial address, supplied in parallel in a single cycle, and initial access time to  
start reading boot code.  
The AutoBoot feature allows the host memory controller to take boot code from the device immediately after the  
end of reset, without having to send a read command. This saves 32 or more cycles and simplifies the logic needed  
to initiate the reading of boot code.  
As part of the Power-up Reset, Hardware Reset, or Software Reset process the AutoBoot feature automatically  
starts a read access from a pre-specified address. At the time the reset process is completed, the device is  
ready to deliver code from the starting address. The host memory controller only needs to drive CE# signal from  
high to low and begin toggling the SCK signal. The device will delay code output for a pre-specified number of  
clock cycles before code streams out.  
The Auto Boot Start Delay (ABSD) field of the AutoBoot register specifies the initial delay if any is needed by  
the host.  
The host cannot send commands during this time.  
– If QE bit (Bit 6) in the Status Register is set to “1”, Fast Read Quad I/O operation will be selected and initial  
delay is the same as dummy cycles of Fast Read Quad I/O Read operation. If it is set to “0”, Fast Read  
operation will be applied and initial delay is the same as dummy cycles of Fast Read operation. Maximum  
operation frequency will be the same with Fast Read Operation.  
The starting address of the boot code is selected by the value programmed into the AutoBoot Start Address  
(ABSA) field of the AutoBoot Register.  
Data will continuously shift out until CE# returns high.  
At any point after the first data byte is transferred, when CE# returns high, the SPI device will reset to standard  
SPI mode; able to accept normal command operations.  
A minimum of one byte must be transferred.  
AutoBoot mode will not initiate again until another power cycle or a reset occurs.  
An AutoBoot Enable bit (ABE) is set to enable the AutoBoot feature.  
The AutoBoot register bits are non-volatile and provide:  
The starting address set by the AutoBoot Start Address (ABSA).  
The number of initial delay cycles, set by the AutoBoot Start Delay (ABSD) 4-bit count value.  
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Figure 8.102 AutoBoot Sequence (QE = 0)  
CE#  
0
1
2
...  
...  
n-1  
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8  
n+9 n+10  
Mode 3  
Mode 0  
SCK  
SI  
ABSD Delay (n)  
High Impedance  
tV  
SO  
...  
7
6
5
4
3
2
1
0
7
6
Data Out 1  
Data Out 2 ...  
Figure 8.103 AutoBoot Sequence (QE = 1)  
CE#  
n+9 n+10  
...  
n-1  
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8  
0
1
2
...  
Mode 3  
Mode 0  
SCK  
IO0  
ABSD Delay (n)  
tV  
...  
4
4
0
0
4
0
0
4
0
4
1
2
...  
...  
1
2
5
5
6
IO1  
IO2  
5
6
1
2
5
6
1
2
5
6
1
2
6
7
IO3  
3
...  
...  
3
7
7
3
7
3
7
3
Data Out 1 Data Out 2 Data Out 3 Data Out 4 Data Out 5  
High Impedance  
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AUTOBOOT REGISTER READ OPERATION (RDABR, 14h)  
The AutoBoot Register Read command is shifted in. Then the 32bit AutoBoot Register is shifted out, least significant  
byte first, most significant bit of each byte first. It is possible to read the AutoBoot Register continuously by providing  
multiples of 32bits.  
Figure 8.104 RDABR Sequence In SPI Mode  
CE#  
...  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 14h  
tV  
SO  
...  
3
2
1
0
7
6
5
4
Data Out 1  
Figure 8.105 RDABR Sequence In QPI Mode  
CE#  
...  
0
1
2
3
Mode 3  
SCK  
Mode 0  
tV  
IO[3:0]  
...  
14h  
7:4 3:0  
Data Out  
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AUTOBOOT REGISTER WRITE OPERATION (WRABR, 15h)  
Before the WRABR command can be accepted, a Write Enable (WREN) command must be issued and decoded  
by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.  
The WRABR command is entered by shifting the instruction and the data bytes, least significant byte first, most  
significant bit of each byte first. The WRABR data is 32bits in length.  
CE# must be driven high after the 32nd bit of data has been latched. If not, the WRABR command is not executed.  
As soon as CE# is driven high, the WRABR operation is initiated. While the WRABR operation is in progress, Status  
Register or Extended Read Register may be read to check the value of the Write In Progress (WIP) bit. The WIP  
bit is “1” during the WRABR operation, and is “0” when it is completed. When the WRABR cycle is completed, the  
WEL is set to “0”.  
Figure 8.106 WRABR Sequence In SPI Mode  
CE#  
...  
0
1
2
3
4
5
6
7
8
7
9
6
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
SI  
...  
Instruction = 15h  
High Impedance  
3
Data In 1  
2
1
0
5
4
SO  
Figure 8.107 WRABR Sequence In QPI Mode  
CE#  
...  
0
1
2
3
Mode 3  
SCK  
Mode 0  
IO[3:0]  
...  
15h  
7:4 3:0  
Data In 1  
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8.47 READ BANK ADDRESS REGISTER OPERATION (RDBR: 16h/C8h)  
The Read Bank Address Register (RDBR) instruction allows the Bank Address Register contents to be read. RDBR  
is used to read only a volatile Bank Address Register.  
The instruction code is first shifted in. Then the 8-bit Bank Register is shifted out. It is possible to read the Bank  
Address Register continuously by providing multiples of eight bits. The maximum operating clock frequency for the  
RDBR command is the same with Fast Read Operation.  
Data is shifted in from SI and data is shifted out from SO in SPI sequence whereas data in and out is via four pins  
(IO0-IO3) in QPI sequence.  
Figure 8.108 Read Bank Address Register Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 16h/C8h  
tV  
Data Out  
SO  
3
2
1
0
7
6
5
4
Figure 8.109 Read Bank Address Register Sequence In QPI Mode  
CE#  
0
1
2
3
Mode 3  
Mode 0  
SCK  
tV  
IO[3:0]  
16h/C8h  
7:4 3:0  
Data Out  
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8.48 WRITE BANK ADDRESS REGISTER OPERATION (WRBRNV: 18h, WRBRV: 17h/C5h)  
The Write Bank Address Register (WRBRNV and WRBRV) instruction is used to write address bits above A23, into  
the Bank Address Register (BAR). WRBRNV is used to write the non-volatile Bank Address Register and WRBRV  
is used to write the volatile Bank Address Register. The instruction is also used to write the Extended Address  
Control bit (EXTADD) that is also in BAR[7]. BAR provides the high order addresses needed by devices having  
more than 128Mbits (16Mbytes), when using 3-byte address commands without extended addressing enabled  
(BAR[7] EXTADD = 0).  
WRBRNV requires the Write Enable (WREN) command to precede it while WRBRV does not require WREN  
command.  
The WRBRNV/WRBRV instruction is followed by the data byte. The Bank Address Register is one data byte in  
length. The Write In Progress (WIP) bit is “1” during WRBRNV operation, and is “0” when it is completed. The  
WRBRV command has no effect on the Write In Progress (WIP) bit. Any bank address bit reserved for the future  
should always be written as “0”. Data is shifted in from SI and in SPI whereas data is shifted in via four pins (IO0-  
IO3) in QPI.  
Note: When WRBRNV is executed, the volatile Bank Address Register is set as well as the non-volatile Bank Address  
Register.  
Figure 8.110 Write Bank Address Register Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
7
9
6
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
Data In  
SI  
Instruction = 18h or 17h/C5h  
High Impedence  
2
1
0
3
5
4
SO  
Figure 8.111 Write Bank Address Register Sequence In QPI Mode  
CE#  
0
1
2
3
Mode 3  
Mode 0  
SCK  
18h or  
17h/C5h  
IO[3:0]  
7:4 3:0  
Data In  
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8.49 ENTER 4-BYTE ADDRESS MODE OPERATION (EN4B, B7h)  
The Enter 4-byte Address Mode instruction allows 32bit address (A31-A0) to be used to access the memory array  
beyond 128Mb. To execute EN4B operation, the host drives CE# low, sends the instruction code and then drives  
CE# high. The Exit 4-byte Address Mode instruction can be used to exit the 4-byte address mode.  
Note: The EN4B instruction will set the Bit 7 (EXTADD) of the volatile Bank Address Register to “1”, but will not change  
the non-volatile Bank Address Register.  
Figure 8.112 Enter 4-byte Address Mode Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = B7h  
SI  
High Impedance  
SO  
Figure 8.113 Enter 4-byte Address Mode Sequence In QPI Mode  
CE#  
0
1
Mode 3  
Mode 0  
SCK  
B7h  
IO[3:0]  
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8.50 EXIT 4-BYTE ADDRESS MODE OPERATION (EX4B, 29h)  
In order to be backward compatible, the Exit 4-byte Address Mode instruction allows 24bit address (A23-A0) to be  
used to access the memory array up to 128Mb. The Bank Address Register must be used to access the memory  
array beyond 128Mb. To execute EX4B operation, the host drives CE# low, sends the instruction code and then  
drives CE# high.  
Note: The EX4B instruction will reset the Bit 7 (EXTADD) of the volatile Bank Address Register to “0” ”, but will not  
change the non-volatile Bank Address Register.  
Figure 8.114 Exit 4-byte Address Mode Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = 29h  
SI  
High Impedance  
SO  
Figure 8.115 Exit 4-byte Address Mode Sequence In QPI Mode  
CE#  
0
1
Mode 3  
Mode 0  
SCK  
29h  
IO[3:0]  
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8.51 READ DYB OPERATION (RDDYB, FAh or 4RDDYB, E0h)  
FAh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
FAh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
E0h is followed by a 4-byte address (A31-A0)  
The instruction is used to read Dynamic Protection Bit (DYB) status of the given sector/block. The instruction code  
is entered first, followed by the 24-bit or 32-bit address selecting location zero within the desired sector/block as  
above. Then the 8-bit DYB access register contents are shifted out. Each bit (SPI) or four bits (QPI) are shifted out  
at the SCK frequency by the falling edge of the SCK signal. It is possible to read the same DYB access register  
continuously by providing multiples of eight bits. The address of the DYB register does not increment so this is not  
a means to read the entire DYB array. Each location must be read with a separate Read DYB instruction. The  
maximum operating clock frequency for READ command is the same with Fast Read Operation.  
Note: The high order address bits not used by 256M/128M must be zero. Data must be either 00h (protected) or FFh  
(unprotected).  
Figure 8.116 Read DYB Sequence In SPI Mode (FAh [EXTADD=0], 3-byte address)  
CE#  
0
1
...  
7
8
9
...  
31  
32  
33  
34  
35  
36  
37  
38  
39  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = FAh  
3-byte Address  
tV  
SO  
3
2
1
0
7
6
5
4
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Figure 8.117 Read DYB Sequence In SPI Mode (FAh [EXTADD=1] or E0h, 4-byte address)  
CE#  
0
1
...  
7
8
9
...  
39  
40  
41  
42  
43  
44  
45  
46  
47  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = FAh/E0h  
4-byte Address  
tV  
SO  
3
2
1
0
7
6
5
4
Figure 8.118 Read DYB Sequence In QPI Mode (FAh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
Mode 3  
Mode 0  
SCK  
tV  
FAh  
3-byte Address  
Data Out  
IO[3:0]  
Figure 8.119 Read DYB Sequence In QPI Mode (FAh [EXTADD=0] or E0h, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
Mode 3  
Mode 0  
SCK  
tV  
FAh/E0h  
4-byte Address  
Data Out  
IO[3:0]  
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8.52 WRITE DYB OPERATION (WRDYB, FBh or 4WRDYB, E1h)  
Before the WRDYB/4WRDYB command can be accepted by the device, a standard Write Enable (06h) instruction  
must previously have been executed for the device to accept Write DYB instruction (Status Register bit WEL must  
equal 1).  
FBh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
FBh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
E1h is followed by a 4-byte address (A31-A0)  
The WRDYB/4WRDYB command is entered by driving CE# low, followed by the instruction code, the 24-bit or 32-  
bit address selecting location zero within the desired sector/block as above, then the data byte. The DYB Access  
Register is one data byte in length.  
CE# must be driven high after the eighth bit of data has been latched in. As soon as CE# is driven high, the  
WRDYB/4WRDYB operation is initiated.  
Note: The high order address bits not used by 256M/128M must be zero. Data must be either 00h (protected) or FFh  
(unprotected).  
Figure 8.120 Write DYB Sequence In SPI Mode (FBh [EXTADD=0], 3-byte address)  
CE#  
0
1
...  
7
8
9
...  
31  
32  
33  
34  
35  
36  
37  
38  
39  
Mode 3  
Mode 0  
SCK  
Data In  
SI  
Instruction = FBh  
3-byte Address  
2
1
0
3
7
6
5
4
High Impedence  
SO  
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Figure 8.121 Write DYB Sequence In SPI Mode (FBh [EXTADD=1] or E1h, 4-byte address)  
CE#  
0
1
...  
7
8
9
...  
39  
40  
41  
42  
43  
44  
45  
46  
47  
Mode 3  
Mode 0  
SCK  
Data In  
SI  
Instruction = FBh/E1h  
4-byte Address  
2
1
0
3
7
6
5
4
High Impedence  
SO  
Figure 8.122 Write DYB Sequence In QPI Mode (FBh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
Mode 3  
Mode 0  
SCK  
FBh  
3-byte Address  
Data In  
IO[3:0]  
Figure 8.123 Write DYB Sequence In QPI Mode (FBh [EXTADD=1] or E1h, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
Mode 3  
Mode 0  
SCK  
FBh/E1h  
4-byte Address  
Data In  
IO[3:0]  
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8.53 READ PPB OPERATION (RDPPB, FCh or 4RDPPB, E2h)  
FCh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
FCh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
E2h is followed by a 4-byte address (A31-A0)  
The instruction code is shifted into SI by the rising edges of the SCK signal, followed by the 24-bit or 32-bit address  
selecting location zero within the desired sector/block as above. Then the 8-bit PPB Access Register contents are  
shifted out on SO. The RDPPB/4RDPPB is supporting only SPI, not supporting QPI.  
It is possible to read the same PPB Access Register continuously by providing multiples of eight bits. The address  
of the PPB Access Register does not increment so this is not a means to read the entire PPB array. Each location  
must be read with a separate Read PPB command. The maximum operating clock frequency for the Read PPB  
command is the same with Fast Read Operation.  
Note: The high order address bits not used by 256M/128M must be zero. Data must be either 00h (protected) or FFh  
(unprotected).  
Figure 8.124 Read PPB Sequence (FCh [EXTADD=0], 3-byte address)  
CE#  
0
1
...  
7
8
9
...  
31  
32  
33  
34  
35  
36  
37  
38  
39  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = FCh  
3-byte Address  
tV  
SO  
3
2
1
0
7
6
5
4
Figure 8.125 Read PPB Sequence (FCh [EXTADD=1] or E2h, 4-byte address)  
CE#  
0
1
...  
7
8
9
...  
39  
40  
41  
42  
43  
44  
45  
46  
47  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = FCh/E2h  
4-byte Address  
tV  
SO  
3
2
1
0
7
6
5
4
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8.54 PROGRAM PPB OPERATION (PGPPB, FDh or 4PGPPB, E3h)  
Before the Program PPB (PGPPB/4PGPPB) command is sent, a Write Enable (WREN) command must be issued.  
After the WREN command has been decoded, the device will set the Write Enable Latch (WEL) in the Status  
Register.  
FDh (EXTADD=0) is followed by a 3-byte address (A23-A0) or  
FDh (EXTADD=1) is followed by a 4-byte address (A31-A0) or  
E3h is followed by a 4-byte address (A31-A0)  
The PGPPB/4PGPPB command is entered by driving CE# low, followed by the instruction code, followed by the  
24-bit or 32-bit address selecting location zero within the desired sector/block as above.  
The PGPPB/4PGPPB command affects the WIP bit in the same manner as any other programming operation. CE#  
must be driven high after the last bit of address has been latched in. As soon as CE# is driven high, the  
PGPPB/4PGPPB operation is initiated. While the PGPPB/4PGPPB operation is in progress, the Status Register or  
Extended Read Register may be read to check the value of the Write In Progress (WIP) bit. The WIP bit is “1”  
during the PGPPB/4PGPPB operation, and is “0” when it is completed. When the PGPPB/4PGPPB operation is  
completed, the WEL is set to “0”.  
Note: The high order address bits not used by 256M/128M must be zero. Data must be either 00h (protected) or FFh  
(unprotected).  
Figure 8.126 Program PPB Sequence In SPI Mode (FDh [EXTADD=0], 3-byte address)  
CE#  
0
1
...  
7
8
9
...  
31  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = FDh  
3-byte Address  
High Impedence  
SO  
Figure 8.127 Program PPB Sequence In SPI Mode (FDh [EXTADD=1] or E3h, 4-byte address)  
CE#  
0
1
...  
7
8
9
...  
39  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = FDh/E3h  
4-byte Address  
High Impedence  
SO  
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Figure 8.128 Program PPB Sequence In QPI Mode (FDh [EXTADD=0], 3-byte address)  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
FDh  
3-byte Address  
IO[3:0]  
Figure 8.129 Program PPB Sequence In QPI Mode (FDh [EXTADD=1] or E3h, 4-byte address)  
CE#  
0
1
2
3
4
5
6
7
8
9
Mode 3  
Mode 0  
SCK  
FDh/E3h  
4-byte Address  
IO[3:0]  
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8.55 ERASE PPB OPERATION (ERPPB, E4h)  
The Erase PPB (ERPPB) command sets all PPB bits to “1”. Before the ERPPB command can be accepted by the  
device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable  
Latch (WEL) in the Status Register to enable any write operations.  
The instruction code is shifted in by the rising edges of the SCK signal. CE# must be driven high after the eighth  
bit of the instruction byte has been latched in. This will initiate the beginning of internal erase cycle, which involves  
the pre-programming and erase of the entire PPB memory array. Without CE# being driven high after the eighth  
bit of the instruction, the PPB erase operation will not be executed.  
With the internal erase cycle in progress, the user can read the value of the Write In Progress (WIP) bit to check if  
the operation has been completed. The WIP bit will indicate “1” when the erase cycle is in progress and “0” when  
the erase cycle has been completed. When the ERPPB operation is completed, the WEL is set to “0”. Erase  
suspend is not allowed during PPB Erase.  
Figure 8.130 Erase PPB Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = E4h  
SI  
High Impedance  
SO  
Figure 8.131 Erase PPB Sequence In QPI Mode  
CE#  
0
1
Mode 3  
SCK  
Mode 0  
E4h  
IO[3:0]  
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8.56 READ ASP OPERATION (RDASP, 2Bh)  
The RDASP instruction code is shifted in by the rising edge of the SCK signal. Then the 16-bit ASP register contents  
is shifted out, least significant byte first, most significant bit of each byte first. Each bit is shifted out at the SCK  
frequency by the falling edge of the SCK signal. It is possible to read the ASP register continuously by providing  
multiples of 16 bits. The maximum operating clock frequency for the RDASP command is the same with Fast Read  
Operation.  
Figure 8.132 Read ASP Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
9
...  
15  
16  
17  
...  
23  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = 2Bh  
1st byte Data Out  
2nd byte Data Out  
...  
tV  
SO  
...  
6
14  
8
15  
7
0
Figure 8.133 Read ASP Sequence In QPI Mode  
CE#  
0
1
2
3
4
5
Mode 3  
SCK  
Mode 0  
tV  
1st byte  
Data Out  
2nd byte  
Data Out  
2Bh  
IO[3:0]  
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8.57 PROGRAM ASP OPERATION (PGASP, 2Fh)  
Before the Program ASP (PGASP) command can be accepted by the device, a Write Enable (WREN) command  
must be issued. After the WREN command has been decoded, the device will set the Write Enable Latch (WEL) in  
the Status Register to enable any write operations.  
The PGASP command is entered by driving CE# low, followed by the instruction code and two data bytes, least  
significant byte first, most significant bit of each byte first. The ASP Register is two data bytes in length. The PGASP  
command affects the Write In Progress (WIP) bit in the same manner as any other programming operation.  
CE# input must be driven high after the sixteenth bit of data has been latched in. If not, the PGASP command is  
not executed. As soon as CE# is driven high, the PGASP operation is initiated. While the PGASP operation is in  
progress, the Status Register or the Extended Read Register may be read to check the value of WIP bit. The WIP  
bit is “1” during the PGASP operation, and is “0” when it is completed. When the PGASP operation is completed,  
the WEL is set to “0”.  
Figure 8.134 Program ASP Sequence In SPI Mode  
CE#  
0
1
...  
7
8
7
9
6
...  
13  
14  
15  
16  
15  
17  
14  
...  
21  
22  
23  
Mode 3  
Mode 0  
SCK  
1st byte Data In  
2nd byte Data In  
...  
SI  
...  
2
Instruction = 2Fh  
10  
9
8
1
0
High Impedence  
SO  
Figure 8.135 Program ASP Sequence In QPI Mode  
CE#  
0
1
2
3
4
5
Mode 3  
Mode 0  
SCK  
1st byte  
Data In  
2nd byte  
Data In  
2Fh  
IO[3:0]  
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8.58 READ PPB LOCK BIT OPERATION (RDPLB, A7h)  
The Read PPB Lock Bit (RDPLB) command allows the PPB Lock Register contents to be read. It is possible to  
read the PPB Lock Register continuously by providing multiples of eight bits. The PPB Lock Register contents may  
only be read when the device is in standby state with no other operation in progress. It is recommended to check  
the Write In Progress (WIP) bit before issuing a new command to the device.  
Figure 8.136 Read PPB Lock Bit Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = A7h  
tV  
Data Out  
SO  
3
2
1
0
7
6
5
4
Figure 8.137 Read PPB Lock Bit Sequence In QPI Mode  
CE#  
0
1
2
3
Mode 3  
Mode 0  
SCK  
tV  
IO[3:0]  
A7h  
7:4 3:0  
Data Out  
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8.59 WRITE PPB LOCK BIT OPERATION (WRPLB, A6h)  
The Write PPB Lock Bit (WRPLB) command clears the PPB Lock (PPBLK) bit to zero. Before the WRPLB command  
can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device,  
which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations.  
The WRPLB command is entered by driving CE# low, followed by the instruction code. CE# must be driven high  
after the eighth bit of instruction has been latched in. If not, the WRPLB command is not executed. As soon as CE#  
is driven high, the WRPLB operation is initiated. While the WRPLB operation is in progress, the Status Register or  
Extended Read Register may still be read to check the value of the Write In Progress (WIP) bit. The WIP bit is “1”  
during the WRPLB operation, and is “0” when it is completed. When the WRPLB operation is completed, the WEL  
is set to “0”. The maximum clock frequency for the WRPLB command is the same with Fast Read Operation.  
Figure 8.138 Write PPB Lock Bit Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = A6h  
SI  
High Impedance  
SO  
Figure 8.139 Write PPB Lock Bit Sequence In QPI Mode  
CE#  
0
1
Mode 3  
SCK  
Mode 0  
A6h  
IO[3:0]  
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8.60 SET FREEZE BIT OPERATION (SFRZ, 91h)  
The Set FREEZE Bit (SFRZ) command sets FREEZE (PPB Lock Register bit7) to one. Please refer to the section  
6.6.3 PPB Lock Register for more detail. Before the SFRZ command can be accepted by the device, a Write Enable  
(WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the  
Status Register to enable any write operations.  
The SFRZ command is entered by driving CE# low, followed by the instruction code. CE# must be driven high after  
the eighth bit of instruction has been latched in. If not, the SFRZ command is not executed. As soon as CE# is  
driven high, the SFRZ operation is initiated. While the SFRZ operation is in progress, the Status Register or  
Extended Read Register may still be read to check the value of the Write In Progress (WIP) bit. The WIP bit is “1”  
during the SFRZ operation, and is “0” when it is completed. When the SFRZ operation is completed, the WEL is  
set to “0”. The maximum clock frequency for the SFRZ command is the same with Fast Read Operation.  
Figure 8.140 Set FREEZE Bit Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = 91h  
SI  
High Impedance  
SO  
Figure 8.141 Set FREEZE Bit Sequence In QPI Mode  
CE#  
0
1
Mode 3  
SCK  
Mode 0  
91h  
IO[3:0]  
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8.61 READ PASSWORD OPERATION (RDPWD, E7h)  
The correct password value may be read only after it is programmed and before the Password Mode has been  
selected by programming the Password Protection Mode bit to “0” in the ASP Register (ASP[2]). After the Password  
Protection Mode is selected the RDPWD command is ignored.  
The RDPWD command is shifted in. Then the 64-bit Password is shifted out, least significant byte first, most  
significant bit of each byte first. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal.  
It is possible to read the Password continuously by providing multiples of 64bits. The maximum operating clock  
frequency for the RDPWD command is the same with Fast Read Operation.  
Figure 8.142 Read password Sequence In SPI Mode  
CE#  
0
1
...  
7
8
9
...  
15  
16  
17  
...  
23  
...  
64  
65  
...  
71  
Mode 3  
Mode 0  
SCK  
SI  
Instruction = E7h  
1st byte Data Out  
2nd byte Data Out  
8th byte Data Out  
...  
56  
...  
...  
tV  
SO  
...  
6
...  
15  
14  
8
7
0
63  
62  
Figure 8.143 Read Password Sequence In QPI Mode  
CE#  
...  
0
1
2
3
4
5
16  
17  
Mode 3  
Mode 0  
SCK  
tV  
1st byte  
Data In  
8th byte  
Data In  
2nd byte  
Data In  
...  
E7h  
IO[3:0]  
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8.62 PROGRAM PASSWORD OPERATION (PGPWD, E8h)  
Before the Program Password (PGPWD) command can be accepted by the device, a Write Enable (WREN)  
command must be issued and decoded by the device which sets the Write Enable Latch (WEL) to enable the  
PGPWD operation. The password can only be programmed before the Password Mode is selected by programming  
the Password Protection Mode bit to “0” in the ASP Register (ASP[2]). After the Password Protection Mode is  
selected the PGPWD command is ignored.  
The PGPWD command is entered by driving CE# low, followed by the instruction code and the password data  
bytes, least significant byte first, most significant bit of each byte first. The password is 64bits in length.  
CE# must be driven high after the 64th bit of data has been latched. If not, the PGPWD command is not executed.  
As soon as CE# is driven high, the PGPWD operation is initiated. While the PGPWD operation is in progress, the  
Status Register or Extended Read Register may be read to check the value of the Write In Progress (WIP) bit. The  
WIP bit is “1” during the PGPWD operation, and is “0” when it is completed. When the PGPWD operation is  
completed, the Write Enable Latch (WEL) is set to “0”. The maximum clock frequency for the PGPWD command  
is the same with Fast Read Operation.  
Figure 8.144 Program Password Sequence In SPI Mode  
CE#  
0
1
...  
7
8
7
9
...  
15  
16  
15  
17  
...  
23  
...  
64  
63  
65  
...  
71  
56  
Mode 3  
Mode 0  
SCK  
1st byte Data In  
2nd byte Data In  
...  
8
8th byte Data In  
...  
...  
SI  
...  
6
...  
Instruction = E8h  
14  
0
62  
High Impedence  
SO  
Figure 8.145 Program Password Sequence In QPI Mode  
CE#  
...  
0
1
2
3
4
5
16  
17  
Mode 3  
Mode 0  
SCK  
1st byte  
Data In  
8th byte  
Data In  
2nd byte  
Data In  
...  
E8h  
IO[3:0]  
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8.63 UNLOCK PASSWORD OPERATION (UNPWD, E9h)  
The UNPWD command is entered by driving CE# low, followed by the instruction code and the password data  
bytes, least significant byte first, most significant bit of each byte first. The password is 64bits in length.  
CE# must be driven high after the 64th bit of data has been latched. If not, the UNPWD command is not executed.  
As soon as CE# is driven high, the UNPWD operation is initiated. While the UNPWD operation is in progress, the  
Status Register or Extended Read Register may be read to check the value of the Write In Progress (WIP) bit. The  
WIP bit is “1” during the UNPWD operation, and is “0” when it is completed.  
If the UNPWD command supplied password does not match the hidden password in the Password Register, the  
UNPWD command is ignored. This returns the device to standby state, ready for a new command such as a retry  
of the UNPWD command. If the password does match, the PPB Lock bit is set to “1”. The maximum clock frequency  
for the UNPWD command is the same with Fast Read Operation.  
Figure 8.146 Unlock Password Sequence In SPI Mode  
CE#  
0
1
...  
7
8
7
9
...  
15  
16  
15  
17  
...  
23  
...  
64  
63  
65  
...  
71  
56  
Mode 3  
Mode 0  
SCK  
1st byte Data In  
2nd byte Data In  
...  
8
8th byte Data In  
...  
...  
SI  
...  
6
...  
Instruction = E9h  
14  
0
62  
High Impedence  
SO  
Figure 8.147 Unlock Password Sequence In SPI Mode  
CE#  
...  
0
1
2
3
4
5
16  
17  
Mode 3  
Mode 0  
SCK  
1st byte  
Data In  
8th byte  
Data In  
2nd byte  
Data In  
...  
E9h  
IO[3:0]  
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8.64 GANG SECTOR/BLOCK LOCK OPERATION (GBLK, 7Eh)  
The Gang Sector/Block Lock (GBLK) instruction provides a quick method to set all DYB (Dynamic Protection Bit)  
bits to “0” at once.  
The sequence of issuing GBLK instruction is: drive CE# low send GBLK instruction code drive CE# high.  
The instruction code will be shifted into the device on the rising edge of SCK.  
The GBLK command is accepted in both SPI and QPI mode. The CE# must go high exactly at the byte boundary,  
otherwise, the instruction will be ignored. While the GBLK operation is in progress, the Status Register or Extended  
Read Register may be read to check the value of the Write In Progress (WIP) bit. The WIP bit is “1” during the  
GBLK operation, and is “0” when it is completed.  
Figure 8.148 Gang Sector/Block Lock Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = 7Eh  
SI  
High Impedance  
SO  
Figure 8.149 Gang Sector/Block Lock Sequence In QPI Mode  
CE#  
0
1
Mode 3  
Mode 0  
SCK  
7Eh  
IO[3:0]  
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8.65 GANG SECTOR/BLOCK UNLOCK OPERATION (GBUN, 98h)  
The Gang Sector/Block Unlock (GBUN) instruction provides a quick method to clear all DYB (Dynamic Protection  
Bit) bits to “1” at once.  
The sequence of issuing GBUN instruction is: drive CE# low send GBUN instruction code drive CE# high.  
The instruction code will be shifted into the device on the rising edge of SCK.  
The GBUN command is accepted in both SPI and QPI mode. The CE# must go high exactly at the byte boundary,  
otherwise, the instruction will be ignored and not be executed. While the GBUN operation is in progress, the Status  
Register or Extended Read Register may be read to check the value of the Write In Progress (WIP) bit. The WIP  
bit is “1” during the GBUN operation, and is “0” when it is completed.  
Figure 8.150 Gang Sector/Block Unlock Sequence In SPI Mode  
CE#  
0
1
2
3
4
5
6
7
Mode 3  
Mode 0  
SCK  
Instruction = 98h  
SI  
High Impedance  
SO  
Figure 8.151 Gang Sector/Block Unlock Sequence In QPI Mode  
CE#  
0
1
Mode 3  
Mode 0  
SCK  
98h  
IO[3:0]  
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9. ELECTRICAL CHARACTERISTICS  
9.1 ABSOLUTE MAXIMUM RATINGS (1)  
Storage Temperature  
-65°C to +150°C  
Standard Package  
Lead-free Package  
240°C 3 Seconds  
260°C 3 Seconds  
-0.5V to VCC + 0.5V  
-0.5V to VCC + 0.5V  
-0.5V to +6.0V  
Surface Mount Lead Soldering Temperature  
Input Voltage with Respect to Ground on All Pins  
All Output Voltage with Respect to Ground  
IS25LP  
VCC  
IS25WP  
-0.5V to +2.5V  
Note:  
1. Applied conditions greater than those listed in “Absolute Maximum Ratings” may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at these or any other conditions above  
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect reliability.  
9.2 OPERATING RANGE  
Extended Grade E  
-40°C to 105°C  
Operating Temperature  
Automotive Grade A3  
-40°C to 125°C  
2.7V (VMIN) 3.6V (VMAX); 3.0V (Typ), Max 166MHz (1)  
2.3V (VMIN) 3.6V (VMAX); 3.0V (Typ), Max 133MHz  
1.65V (VMIN) 1.95V (VMAX); 1.8V (Typ), Max 133MHz (2)  
IS25LP  
VCC Power Supply  
IS25WP  
Notes:  
1. Max frequency is 133MHz at Mode 3.  
2. Max. Frequency is 104MHz with 3-byte address (24-bit address) fast read operation.  
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9.3 DC CHARACTERISTICS  
(Under operating range)  
Symbol  
Parameter  
Condition  
NORD at 80MHz  
Min  
Typ(2)  
7.5  
9.5  
9
Max  
9
Units  
FRD Single at 166MHz  
FRD Dual at 166MHz  
FRD Quad at 166MHz  
FRD Single at 133MHz  
FRD Dual at 133MHz  
FRD Quad at 133MHz  
FRD Quad at 83MHz  
11  
12  
9
15  
9
10.5  
11  
8
VCC Active Read current(3)  
mA  
ICC1  
10  
9
13.5  
11  
FRD Quad at 104MHz  
FRD Single DTR at 80MHz  
FRD Dual DTR at 80MHz  
FRD Quad DTR at 80MHz  
10  
9
12  
11  
10  
11  
12  
13  
85°C  
105°C  
125°C  
85°C  
30  
VCC Program Current  
VCC WRSR Current  
CE# = VCC  
CE# = VCC  
CE# = VCC  
CE# = VCC  
25  
25  
25  
25  
10  
6
30  
ICC2  
ICC3  
ICC4  
ICC5  
30  
30  
105°C  
125°C  
85°C  
30  
30  
mA  
30  
VCC Erase Current  
(SER/4SER/BER32/4BER32/  
BER64/4BER64)  
105°C  
125°C  
85°C  
30  
30  
30  
VCC Erase Current (CE)  
105°C  
125°C  
85°C  
30  
30  
60 (6)  
90 (6)  
140  
60 (6)  
90 (6)  
140  
20 (6)  
30 (6)  
50  
IS25LP  
105°C  
125°C  
85°C  
VCC Standby  
Current CMOS  
CE# = VCC  
,
µA  
ISB1  
(4)  
VIN = GND or VCC  
IS25WP  
IS25LP  
IS25WP  
105°C  
125°C  
85°C  
105°C  
125°C  
85°C  
7.5  
1
Deep power down  
current  
CE# = VCC,  
µA  
ISB2  
CE#, RESET#(4) = VCC  
20 (6)  
30 (6)  
50  
105°C  
125°C  
Input Leakage Current  
VIN = 0V to VCC  
VIN = 0V to VCC  
±1(5)  
±1(5)  
0.3VCC  
VCC + 0.3  
0.2  
µA  
µA  
V
ILI  
Output Leakage Current  
Input Low Voltage  
ILO  
(1)  
-0.5  
VIL  
(1)  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
0.7VCC  
V
VIH  
IOL = 100 µA  
IOH = -100 µA  
V
VOL  
VOH  
VCC - 0.2  
V
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Notes:  
1. Maximum DC voltage on input or I/O pins is VCC + 0.5V. During voltage transitions, input or I/O pins may  
overshoot VCC by +2.0V for a period of time not to exceed 20ns. Minimum DC voltage on input or I/O pins is  
-0.5V. During voltage transitions, input or I/O pins may undershoot GND by -2.0V for a period of time not to  
exceed 20ns.  
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured  
at VCC = VCC (Typ), TA=25°C.  
3. Outputs are unconnected during reading data so that output switching current is not included.  
4. VIN = Vcc for the dedicated RESET# pin (or ball).  
5. The Max of ILI and ILO for the dedicated RESET# pin (or ball) is ±2 µA.  
6. These parameters are characterized and are not 100% tested.  
9.4 AC MEASUREMENT CONDITIONS  
Symbol  
Parameter  
Min  
Max  
30  
10  
5
Units  
pF  
pF  
ns  
V
Load Capacitance up to 104MHz/52MHz DTR  
Load Capacitance up to 166MHz/80MHz DTR  
Input Rise and Fall Times  
CL  
TR,TF  
VIN  
Input Pulse Voltages  
0.2VCC to 0.8VCC  
VREFI  
VREFO  
Input Timing Reference Voltages  
Output Timing Reference Voltages  
0.3VCC to 0.7VCC  
0.5VCC  
V
V
Figure 9.1 Output test load & AC measurement I/O Waveform  
0.8VCC  
AC  
Input  
VCC/2  
Measurement  
Level  
1.8k  
0.2VCC  
OUTPUT PIN  
1.2k  
10/30pf  
9.5 PIN CAPACITANCE  
(TA = 25°C, VCC=3V (IS25LPx), 1.8V (IS25WPx), 1MHz)  
IS25LP  
IS25WP  
Symbol  
Parameter  
Test Condition  
Units  
Min  
Max  
Min  
Max  
Input Capacitance  
(CE#, SCK)  
CIN  
VIN = 0V  
-
-
6
-
6
pF  
pF  
Input/Output  
Capacitance  
(other pins)  
CIN/OUT  
VIN/OUT = 0V  
8
-
10  
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9.6 AC CHARACTERISTIC  
(Under operating range, refer to section 9.4 for AC measurement conditions)  
Symbol  
Parameter  
Min  
Typ(2)  
Max  
Units  
166(3)  
Vcc=2.7V~3.6V  
Vcc=2.3V~3.6V  
Vcc=1.65V~1.95V  
0
MHz  
Clock Frequency except for fast read  
DTR and read (03h)  
0
0
133  
MHz  
MHz  
fCT  
133(3)  
Clock Frequency for fast read DTR:  
SPI DTR, Dual DTR, Dual I/O DTR, Quad I/O DTR, and QPI  
DTR.  
80  
80  
MHz  
fC  
Clock Frequency for read (03h)  
SCK Rise Time (peak to peak)  
SCK Fall Time ( peak to peak)  
0
MHz  
V/ns  
V/ns  
(1)  
tCLCH  
0.1  
(1)  
tCHCL  
0.1  
For read (03h)  
0.45 x 1/fCmax  
tCKH  
SCK High Time  
For others  
ns  
0.45 x 1/fCTmax  
For read (03h)  
0.45 x 1/fCmax  
tCKL  
tCEH  
tCS  
SCK Low Time  
For others  
ns  
ns  
ns  
ns  
ns  
0.45 x 1/fCTmax  
CE# High Time  
7
3
IS25LP  
CE# Setup Time  
IS25WP  
5
tCH  
CE# Hold Time  
3
STR  
2
tDS  
Data In Setup Time  
DTR  
1.5  
2
STR  
tDH  
Data in Hold Time  
DTR  
ns  
1.5  
5.5(4).  
7.0(4).  
6.5.  
@10pF  
@30pF  
@10pF  
@30pF  
@10pF  
@30pF  
2.7~3.6V,  
-40°C to 85°C  
IS25LP  
Output  
Valid  
2.3~3.6V,  
-40°C to 125°C  
tV  
ns  
8.0  
5.5.  
1.65~1.95V,  
-40°C to 125°C  
IS25WP  
7.0  
tOH  
Output Hold Time  
2
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
(1)  
tDIS  
Output Disable Time  
8
tHLCH  
tCHHH  
tHHCH  
tCHHL  
HOLD Active Setup Time relative to SCK  
HOLD Active Hold Time relative to SCK  
HOLD Not Active Setup Time relative to SCK  
HOLD Not Active Hold Time relative to SCK  
HOLD to Output Low Z  
2
2
2
2
(1)  
tLZ  
8
8
(1)  
tHZ  
HOLD to Output High Z  
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Symbol  
tEC  
Parameter  
Min  
Typ(2)  
100  
0.14  
0.17  
70  
Max  
300  
0.5  
1.0  
180  
0.8  
3
Units  
Sector Erase Time (4Kbyte)  
Block Erase Time (32Kbyte)  
Block Erase time (64Kbyte)  
Chip Erase Time  
ms  
s
s
s
tPP  
Page Program Time  
0.2  
ms  
IS25LP  
(1)  
tRES1  
Release deep power down  
µs  
IS25WP  
5
(1)  
tDP  
Deep power down  
3
µs  
ms  
µs  
µs  
µs  
ns  
µs  
tW  
Write Status Register time  
Suspend to read ready  
2
15  
-
(1)  
tSUS  
100  
400  
(1)  
TRS  
Resume to next suspend  
Software Reset recovery time  
RESET# pin low pulse width  
Hardware Reset recovery time  
-
(1)  
tSRST  
35  
(1)  
tRESET  
100  
(1)  
tHWRST  
35  
Notes:  
1. These parameters are characterized and not 100% tested.  
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC  
= VCC (Typ), TA=25°C.  
3. Max. Frequency is 133MHz at Mode 3  
4. Values are guaranteed by characterization and not 100% tested in production.  
5. Max. Frequency is 104MHz with 3-byte address (24-bit address) fast read operation.  
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9.7 SERIAL INPUT/OUTPUT TIMING  
Figure 9.2 SERIAL INPUT/OUTPUT TIMING (Normal Mode) (1)  
tCEH  
CE#  
tCS  
tCH  
tCKH  
tCKL  
SCK  
SI  
tDS  
tDH  
VALID IN  
VALID IN  
tV  
tOH  
VALID OUTPUT  
tDIS  
HI-Z  
HI-Z  
SO  
Note1: For SPI Mode 0 (0,0)  
Figure 9.3 SERIAL INPUT/OUTPUT TIMING (DTR Mode) (1)  
tCEH  
CE#  
tCS  
tCH  
tCKH  
tCKL  
SCK  
SI  
tDS  
tDH  
VALID IN  
VALID IN  
VALID IN  
tDIS  
tOH  
tV  
tV  
HI-Z  
HI-Z  
SO  
Output  
Output  
Note1: For SPI Mode 0 (0,0)  
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Figure 9.4 HOLD TIMING  
CE#  
tHLCH  
tCHHL  
tHHCH  
SCK  
tCHHH  
tHZ  
tLZ  
SO  
SI  
HOLD#  
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9.8 POWER-UP AND POWER-DOWN  
At Power-up and Power-down, the device must be NOT SELECTED until Vcc reaches at the right level. (Adding a  
simple pull-up resistor on CE# is recommended.)  
Power up timing  
VCC  
VCC(max)  
All Write Commands are Rejected  
Chip Selection Not Allowed  
VCC(min)  
Reset State  
Device fully  
accessible  
tVCE  
Read Access Allowed  
V(write inhibit)  
tPUW  
Symbol  
tVCE(1)  
tPUW(1)  
Parameter  
Min.  
1
Max  
Unit  
ms  
Vcc(min) to CE# Low  
Power-up time delay to write instruction  
IS25LP  
IS25WP  
1
10  
2.1  
1.4  
ms  
(1)  
VWI  
Write Inhibit Voltage  
V
Note: These parameters are characterized and not 100% tested.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
166  
04/15/2019  
IS25LP256D  
IS25WP256D  
9.9 PROGRAM/ERASE PERFORMANCE  
Parameter  
Typ  
100  
0.14  
0.17  
70  
Max  
300  
0.5  
Unit  
ms  
s
Sector Erase Time (4Kbyte)  
Block Erase Time (32Kbyte)  
Block Erase Time (64Kbyte)  
Chip Erase Time  
1.0  
s
180  
0.8  
s
0.2  
8
ms  
µs  
Page Programming Time  
Byte Program  
40  
Note: These parameters are characterized and not 100% tested.  
9.10 RELIABILITY CHARACTERISTICS  
Parameter  
Endurance  
Min  
100,000  
20  
Unit  
Test Method  
Cycles  
Years  
Volts  
Volts  
mA  
JEDEC Standard A117  
JEDEC Standard A103  
JEDEC Standard A114  
JEDEC Standard A115  
JEDEC Standard 78  
Data Retention  
ESD Human Body Model  
ESD Machine Model  
Latch-Up  
2,000  
200  
100 + ICC1  
Note: These parameters are characterized and not 100% tested.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
167  
04/15/2019  
IS25LP256D  
IS25WP256D  
10. PACKAGE TYPE INFORMATION  
10.1 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) PACKAGE 8X6MM (L)  
Note: Pad Open size is 4.7mm x 4.6mm  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
168  
04/15/2019  
IS25LP256D  
IS25WP256D  
10.2 8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) PACKAGE 8X6MM (J)  
Note: Pad Open size is 3.4mm x 4.3mm  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
169  
04/15/2019  
IS25LP256D  
IS25WP256D  
10.3 16-LEAD PLASTIC SMALL OUTLINE PACKAGE (300 MILS BODY WIDTH) (M)  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
170  
04/15/2019  
IS25LP256D  
IS25WP256D  
10.4 24-BALL THIN PROFILE FINE PITCH BGA 6X8MM 4X6 BALL ARRAY (G)  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
171  
04/15/2019  
IS25LP256D  
IS25WP256D  
10.5 24-BALL THIN PROFILE FINE PITCH BGA 6X8MM 5X5 BALL ARRAY (H)  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
172  
04/15/2019  
IS25LP256D  
IS25WP256D  
11. ORDERING INFORMATION Valid Part Numbers  
IS25LP 256 D  
-
J M L E  
TEMPERATURE RANGE  
E = Extended (-40°C to +105°C)  
A3 = Automotive Grade (-40°C to +125°C)  
PACKAGING CONTENT  
L = RoHS compliant  
PACKAGE Type  
L = 8-contact WSON (8x6mm)  
J = 8-contact WSON (8x6mm), Pad Open = 3.4mmx4.3mm  
M = 16-pin SOIC 300mil  
G = 24-ball TFBGA 4x6 ball array  
H = 24-ball TFBGA 5x5 ball array  
W = KGD  
Option  
J = Standard  
R = Dedicated RESET# pin (or ball)  
Q = QE bit set to 1 (Call Factory)  
H = SFDP  
E = SFDP + QE bit set to 1 (Call Factory)  
G = SFDP + Dedicated RESET# (Call Factory)  
F = SFDP + Dedicated RESET#+ QE bit set to 1 (Call Factory)  
Die Revision  
D = Revision D  
Density  
256 = 256 Megabit  
BASE PART NUMBER  
IS = Integrated Silicon Solution Inc.  
25LP = FLASH, 2.30V ~ 3.60V, QPI  
25WP = FLASH, 1.65V ~ 1.95V, QPI  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
173  
04/15/2019  
IS25LP256D  
IS25WP256D  
Density,  
Voltage  
Frequency (MHz)  
Order Part Number(3)  
Package  
IS25LP256D-JLLE  
IS25LP256D-QLLE  
IS25LP256D-ELLE  
IS25LP256D-EJLE  
IS25LP256D-JMLE  
IS25LP256D-RMLE  
IS25LP256D-FMLE  
IS25LP256D-JGLE  
IS25LP256D-RGLE  
IS25LP256D-JHLE  
IS25LP256D-RHLE  
IS25LP256D-JLLA3  
IS25LP256D-QLLA3  
IS25LP256D-JMLA3  
IS25LP256D-RMLA3  
IS25LP256D-FMLA3  
IS25LP256D-JGLA3  
IS25LP256D-RGLA3  
IS25LP256D-JHLA3  
IS25LP256D-RHLA3  
IS25WP256D-JLLE  
IS25WP256D-JMLE  
IS25WP256D-RMLE  
IS25WP256D-FMLE  
IS25WP256D-JGLE  
IS25WP256D-RGLE  
IS25WP256D-JHLE  
IS25WP256D-RHLE  
IS25WP256D-JLLA3  
IS25WP256D-JMLA3  
IS25WP256D-RMLA3  
IS25WP256D-FMLA3  
IS25WP256D-JGLA3  
IS25WP256D-RGLA3  
IS25WP256D-JHLA3  
IS25WP256D-RHLA3  
8-contact WSON 8x6mm  
8-contact WSON (8x6mm)  
8-contact WSON (8x6mm)  
8-contact WSON (8x6mm)  
16-pin SOIC 300mil  
16-pin SOIC 300mil  
16-pin SOIC 300mil  
24-ball TFBGA 6x8mm 4x6 ball array  
24-ball TFBGA 6x8mm 4x6 ball array  
24-ball TFBGA 6x8mm 5x5 ball array  
24-ball TFBGA 6x8mm 5x5 ball array  
8-contact WSON (8x6mm)  
8-contact WSON (8x6mm)  
16-pin SOIC 300mil  
256M,  
3V  
STR 166 (2),  
DTR 80  
16-pin SOIC 300mil  
16-pin SOIC 300mil  
24-ball TFBGA 6x8mm 4x6 ball array  
24-ball TFBGA 6x8mm 4x6 ball array  
24-ball TFBGA 6x8mm 5x5 ball array  
24-ball TFBGA 6x8mm 5x5 ball array  
8-contact WSON 8x6mm  
16-pin SOIC 300mil  
16-pin SOIC 300mil  
16-pin SOIC 300mil  
24-ball TFBGA 6x8mm 4x6 ball array  
24-ball TFBGA 6x8mm 4x6 ball array  
24-ball TFBGA 6x8mm 5x5 ball array  
24-ball TFBGA 6x8mm 5x5 ball array  
8-contact WSON (8x6mm)  
16-pin SOIC 300mil  
256M,  
1.8V  
STR 133(3),  
DTR 80  
16-pin SOIC 300mil  
16-pin SOIC 300mil  
24-ball TFBGA 6x8mm 4x6 ball array  
24-ball TFBGA 6x8mm 4x6 ball array  
24-ball TFBGA 6x8mm 5x5 ball array  
24-ball TFBGA 6x8mm 5x5 ball array  
Notes:  
1. A3 meets AEC-Q100 requirements with PPAP.  
Temp Grades: E= -40 to 105°C, A3= -40 to 125°C  
2. 133MHz at Vcc = 2.3V~3.6V (Mode 0 & Mode 3) or 133MHz at Vcc = 2.7V~3.6V (Mode 3 only).  
3. 104MHz with 3-byte address (24-bit address) fast read operation.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev A6  
174  
04/15/2019  

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