IS41C16256-60TI [ISSI]
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE; 256K ×16 （ 4兆位）动态RAM与EDO页模式
| 型号： | IS41C16256-60TI |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 文件： | 总19页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
IS41C16256
IS41LV16256
256K x 16 (4-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI
JUNE 2000
FEATURES
DESCRIPTION
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
TheISSI IS41C16256andIS41LV16256are262,144x16-bit
high-performanceCMOSDynamicRandomAccessMemory. Both
productsofferacceleratedcycleaccessEDOPageMode. EDO
PageModeallows512randomaccesseswithinasinglerowwith
accesscycletimeasshortas10nsper16-bitword.TheByteWrite
control, of upper and lower byte, makes the IS41C16256 and
IS41LV16256idealforusein16and32-bitwidedatabussystems.
• Refresh Mode : RAS-Only, CAS-before-RAS
(CBR), and Hidden
• JEDEC standard pinout
• Single power supply
5V ± 10% (IS41C16256)
ThesefeaturesmaketheIS41C16256andIS41LV1626 ideally
suited for high band-width graphics, digital signal processing,
high-performancecomputingsystems,andperipheralapplications.
3.3V ± 10% (IS41LV16256)
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range -30oC to 85oC
• Industrail Temperature Range -40oC to 85oC
The IS41C16256 and IS41LV16256 are packaged in 40-pin
400-mil SOJ and TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
-35
-50
50
14
25
20
90
-60
60
Unit
ns
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
Max. Column Address Access Time (tAA)
Min. EDO Page Mode Cycle Time (tPC)
Min. Read/Write Cycle Time (tRC)
35
10
18
12
60
15
ns
30
ns
25
ns
110
ns
PIN CONFIGURATIONS
40-Pin TSOP (Type II)
40-Pin SOJ
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
1
2
3
4
5
6
7
8
9
10
40
39
38
37
36
35
34
33
32
31
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
1
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
2
PIN DESCRIPTIONS
3
4
A0-A8 Address Inputs
5
I/O0-15 Data Inputs/Outputs
6
7
WE
Write Enable
8
OE
Output Enable
9
I/O8
10
11
12
13
14
15
16
17
18
19
20
RAS
UCAS
LCAS
Vcc
Row Address Strobe
UpperColumnAddressStrobe
LowerColumnAddressStrobe
Power
NC
NC
WE
RAS
NC
A0
11
12
13
14
15
16
17
18
19
20
30
29
28
27
26
25
24
23
22
21
NC
NC
LCAS
UCAS
OE
LCAS
UCAS
OE
WE
RAS
NC
A8
A8
A0
A7
A7
GND
NC
Ground
A1
A6
A1
A6
No Connection
A2
A5
A2
A5
A3
A4
A3
A4
VCC
GND
VCC
GND
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
1
06/29/00
IS41C16256
IS41LV16256
®
ISSI
FUNCTIONAL BLOCK DIAGRAM
OE
WE
WE
CONTROL
LOGICS
OE
CONTROL
LOGIC
CAS
CLOCK
GENERATOR
LCAS
UCAS
CAS
WE
DATA I/O BUS
RAS
CLOCK
RAS
GENERATOR
COLUMN DECODERS
SENSE AMPLIFIERS
REFRESH
COUNTER
I/O0-I/O15
MEMORY ARRAY
262,144 x 16
ADDRESS
BUFFERS
A0-A8
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
IS41C16256
IS41LV16256
®
ISSI
TRUTHTABLE
Function
RAS
LCAS UCAS WE
OE Address tR/tC I/O
Standby
H
L
L
H
L
L
H
L
X
H
H
X
L
L
X
High-Z
Read: Word
Read: Lower Byte
ROW/COL
ROW/COL
DOUT
H
Lower Byte, DOUT
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, DOUT
Write: Word (Early Write)
L
L
L
L
L
L
L
X
X
ROW/COL
ROW/COL
DIN
Write: Lower Byte (Early Write)
H
Lower Byte, DIN
Upper Byte, High-Z
Write: Upper Byte (Early Write)
Read-Write(1,2)
L
L
H
L
L
L
L
X
ROW/COL
ROW/COL
Lower Byte, High-Z
Upper Byte, DIN
H→L L→H
DOUT, DIN
EDO Page-Mode Read(2) 1st Cycle:
2nd Cycle:
L
L
L
H→L H→L
H→L H→L
L→H L→H
H
H
H
L
L
L
ROW/COL
NA/COL
NA/NA
DOUT
DOUT
DOUT
Any Cycle:
EDO Page-Mode Write(1) 1st Cycle:
2nd Cycle:
L
L
H→L H→L
H→L H→L
L
L
X
X
ROW/COL
NA/COL
DIN
DIN
EDO Page-Mode
Read-Write(1,2)
1st Cycle:
2nd Cycle:
L
L
H→L H→L H→L L→H
H→L H→L H→L L→H
ROW/COL
NA/COL
DOUT, DIN
DOUT, DIN
Hidden Refresh2)
Read L→H→L
Write L→H→L
L
L
L
L
H
L
L
X
ROW/COL
ROW/COL
DOUT
DOUT
RAS-Only Refresh
L
H
L
H
L
X
X
X
X
ROW/NA
X
High-Z
High-Z
CBR Refresh(3)
H→L
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active).
2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active).
3. At least one of the two CAS signals must be active (LCAS or UCAS).
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
3
06/29/00
IS41C16256
IS41LV16256
®
ISSI
Functional Description
Refresh Cycle
The IS41C16256 and IS41LV16256 is a CMOS DRAM
optimized for high-speed bandwidth, low power applica-
tions. During READ or WRITE cycles, each bit is uniquely
addressed through the 18 address bits. These are en-
tered nine bits (A0-A8) at a time. The row address is
latched by the Row Address Strobe (RAS). The column
address is latched by the Column Address Strobe (CAS).
RAS is used to latch the first nine bits and CAS is used the
latter nine bits.
To retain data, 512 refresh cycles are required in each
8 ms period. There are two ways to refresh the memory.
1. Byclockingeachofthe512rowaddresses(A0through
A8) withRAS at least once every 8 ms. Any read, write,
read-modify-write or RAS-only cycle refreshes the ad-
dressed row.
2. Using a CAS-before-RAS refresh cycle. CAS-before-
RAS refresh is activated by the falling edge of RAS,
while holding CAS LOW. In CAS-before-RAS refresh
cycle, an internal 9-bit counter provides the row ad-
dresses and the external address inputs are ignored.
The IS41C16256 and IS41LV16256 has two CAS con-
trols, LCAS and UCAS. The LCAS and UCAS inputs
internally generates a CAS signal functioning in an iden-
tical manner to the single CAS input on the other 256K x
16 DRAMs. The key difference is that each CAS controls
its corresponding I/O tristate logic (in conjunction with OE
and WE and RAS). LCAS controls I/O0 through I/O7 and
UCAS controls I/O8 through I/O15.
CAS-before-RAS is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Extended Data Out Page Mode
The IS41C16256 and IS41LV16256 CAS function is
determinedbythefirstCAS(LCASorUCAS)transitioning
LOW and the last transitioning back HIGH. The two CAS
controls give the IS41C16256 both BYTE READ and
BYTE WRITE cycle capabilities.
EDOpagemodeoperationpermitsall512columnswithin
a selected row to be randomly accessed at a high data
rate.
In EDO page mode read cycle, the data-out is held to the
next CAS cycle’s falling edge, instead of the rising edge.
For this reason, the valid data output time in EDO page
mode is extended compared with the fast page mode. In
the fast page mode, the valid data output time becomes
shorter as the CAS cycle time becomes shorter. There-
fore, in EDO page mode, the timing margin in read cycle
is larger than that of the fast page mode even if the CAS
cycle time becomes shorter.
Memory Cycle
A memory cycle is initiated by bring RAS LOW and it is
terminated by returning both RAS and CAS HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum tRAS time has expired. A new
cycle must not be initiated until the minimum precharge
time tRP, tCP has elapsed.
InEDOpagemode,duetotheextendeddatafunction,the
CAS cycle time can be shorter than in the fast page mode
if the timing margin is the same.
The EDO page mode allows both read and write opera-
tions during one RAS cycle, but the performance is
equivalent to that of the fast page mode in that case.
Read Cycle
A read cycle is initiated by the falling edge of CAS or OE,
whichever occurs last, while holding WE HIGH. The
column address must be held for a minimum time speci-
fied by tAR. Data Out becomes valid only when tRAC, tAA,
tCAC and tOEA are all satisfied. As a result, the access time
is dependent on the timing relationships between these
parameters.
Power-On
After application of the VCC supply, an initial pause of
200 µs is required followed by a minimum of eight initial-
ization cycles (any combination of cycles containing a
RASsignal).
Write Cycle
During power-on, it is recommended that RAS track with
VCC or be held at a valid VIH to avoid current surges.
A write cycle is initiated by the falling edge of CAS and
WE, whichever occurs last. The input data must be valid
at or before the falling edge of CAS or WE, whichever
occurs last.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
IS41C16256
IS41LV16256
®
ISSI
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
5V
3.3V
–1.0 to +7.0
-0.5 to 4.6
V
V
VCC
Supply Voltage
5V
3.3V
–1.0 to +7.0
-0.5 to 4.6
V
V
IOUT
PD
Output Current
50
1
mA
W
Power Dissipation
TA
Commercial Operation Temperature
Extended Temperature
Industrail Temperature
0 to +70
–30 to +85
–40 to +85
°C
°C
°C
TSTG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
5V
3.3V
4.5
3.0
5.0
3.3
5.5
3.6
V
VIH
VIL
TA
Input High Voltage
Input Low Voltage
5V
3.3V
2.4
2.0
—
—
VCC + 1.0
VCC + 0.3
V
V
5V
3.3V
–1.0
–0.3
—
—
0.8
0.8
Commercial Ambient Temperature
Extended Ambient Temperature
Industrail Ambient Temperature
0
–30
–40
—
—
—
70
85
85
°C
°C
°C
CAPACITANCE(1,2)
Symbol
Parameter
Input Capacitance: A0-A8
Max.
Unit
CIN1
CIN2
CIO
5
7
7
pF
pF
pF
Input Capacitance: RAS, UCAS, LCAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O15
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz,
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
5
06/29/00
IS41C16256
IS41LV16256
®
ISSI
ELECTRICALCHARACTERISTICS(1)
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed Min. Max.
Unit
IIL
Input Leakage Current
Any input 0V ≤ VIN ≤ Vcc
Other inputs not under test = 0V
–10
10
µA
IIO
Output Leakage Current
Output is disabled (Hi-Z)
–10
10
µA
0V ≤ VOUT ≤ Vcc
VOH
VOL
ICC1
Output High Voltage Level
Output Low Voltage Level
Stand-by Current: TTL
IOH = –2.5 mA
2.4
—
V
V
IOL = +2.1 mA
—
0.4
RAS, LCAS, UCAS ≥ VIH Commercial 5V
—
—
—
—
3
4
2
3
mA
Industrial
Commercial 3V
5V
Industrial
RAS, LCAS, UCAS ≥ VCC – 0.2V
3V
ICC2
ICC3
Stand-by Current: CMOS
5V
3V
—
—
2
1
mA
mA
Operating Current:
RAS, LCAS, UCAS,
Address Cycling, tRC = tRC (min.)
-35
-50
-60
—
—
—
230
180
170
Random Read/Write(2,3,4)
AveragePowerSupplyCurrent
ICC4
ICC5
Operating Current:
RAS = VIL, LCAS, UCAS,
Cycling tPC = tPC (min.)
-35
-50
-60
—
—
—
220
170
160
mA
mA
mA
EDO Page Mode(2,3,4)
AveragePowerSupplyCurrent
Refresh Current:
RAS Cycling, LCAS, UCAS ≥ VIH
tRC = tRC (min.)
-35
-50
-60
—
—
—
230
180
170
RAS-Only(2,3)
AveragePowerSupplyCurrent
ICC6
Refresh Current:
RAS, LCAS, UCAS Cycling
tRC = tRC (min.)
-35
-50
-60
—
—
—
230
180
170
CBR(2,3,5)
Average Power Supply Current
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device
operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
IS41C16256
IS41LV16256
®
ISSI
ACCHARACTERISTICS(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-35
-50
-60
Symbol
tRC
Parameter
Min. Max.
Min. Max
Min. Max.
Units
Random READ or WRITE Cycle Time
Access Time from RAS(6, 7)
Access Time from CAS(6, 8, 15)
Access Time from Column-Address(6)
RAS Pulse Width
60
35
—
—
35
20
6
—
—
90
50
—
—
50
30
8
—
—
110
60
—
—
60
40
10
10
60
20
0
—
ns
15
30
10K
—
ns
tRAC
tCAC
tAA
10
18
10K
—
14
25
10K
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tRAS
tRP
RAS Precharge Time
CAS Pulse Width(26)
CAS Precharge Time(9, 25)
CAS Hold Time (21)
RAS to CAS Delay Time(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time(20)
Column-Address Hold Time(20)
tCAS
tCP
10K
—
10K
—
10K
—
5
8
tCSH
tRCD
tASR
tRAH
tASC
tCAH
tAR
35
11
0
—
50
19
0
—
—
28
—
36
—
45
—
6
—
8
—
10
0
—
0
—
0
—
—
6
—
8
—
10
40
—
Column-Address Hold Time
30
—
40
—
—
(referenced to RAS)
tRAD
tRAL
RAS to Column-Address Delay Time(11)
Column-Address to RAS Lead Time
RAS to CAS Precharge Time
RAS Hold Time(27)
CAS to Output in Low-Z(15, 29)
CAS to RAS Precharge Time(21)
Output Disable Time(19, 28, 29)
Output Enable Time(15, 16)
10
18
0
20
—
—
—
—
—
12
10
—
—
—
—
—
14
25
0
25
—
—
—
—
—
12
15
—
—
—
—
—
15
30
0
30
—
—
—
—
—
12
15
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tRPC
tRSH
tCLZ
8
14
3
15
3
3
tCRP
tOD
5
5
5
3
3
3
tOE / tOEA
tOEHC
tOEP
0
0
—
10
10
5
OE HIGH Hold Time from CAS HIGH
OE HIGH Pulse Width
10
10
5
10
10
5
tOES
OE LOW to CAS HIGH Setup Time
Read Command Setup Time(17, 20)
tRCS
tRRH
0
0
0
Read Command Hold Time
0
0
0
(referenced to RAS)(12)
tRCH
Read Command Hold Time
0
—
0
—
0
—
ns
(referenced to CAS)(12, 17, 21)
tWCH
tWCR
Write Command Hold Time(17, 27)
5
—
—
8
—
—
10
50
—
—
ns
ns
Write Command Hold Time
30
40
(referenced to RAS)(17)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
7
06/29/00
IS41C16256
IS41LV16256
®
ISSI
AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-35
-50
-60
Symbol
tWP
Parameter
Min. Max.
Min. Max.
Min. Max.
Units
ns
Write Command Pulse Width(17)
WE Pulse Widths to Disable Outputs
Write Command to RAS Lead Time(17)
Write Command to CAS Lead Time(17, 21)
Write Command Setup Time(14, 17, 20)
5
10
8
—
—
—
—
—
8
—
—
—
—
—
10
10
15
15
0
—
—
—
—
—
tWPZ
10
14
14
0
ns
tRWL
tCWL
tWCS
tDHR
ns
8
ns
0
ns
Data-in Hold Time (referenced to RAS)
Column-Address Setup Time to CAS
Precharge during WRITE Cycle
30
15
—
—
40
15
—
—
40
15
—
—
ns
ns
tACH
tOEH
OE Hold Time from WE during
READ-MODIFY-WRITE cycle(18)
8
—
8
—
15
—
ns
tDS
Data-In Setup Time(15, 22)
0
6
—
—
—
—
0
6
—
—
—
—
0
—
—
—
—
ns
ns
ns
ns
tDH
Data-In Hold Time(15, 22)
10
tRWC
tRWD
READ-MODIFY-WRITE Cycle Time
80
45
100
50
140
80
RAS to WE Delay Time during
READ-MODIFY-WRITE Cycle(14)
tCWD
tAWD
tPC
CAS to WE Delay Time(14, 20)
Column-Address to WE Delay Time(14)
25
30
12
—
—
—
30
30
15
—
—
—
36
49
25
—
—
—
ns
ns
ns
EDO Page Mode READ or WRITE
Cycle Time(24)
tRASP
tCPA
RAS Pulse Width in EDO Page Mode
Access Time from CAS Precharge(15)
35 100K
40 100K
60 100K
ns
ns
—
21
—
27
56
—
—
34
ns
tPRWC
EDO Page Mode READ-WRITE
Cycle Time(24)
40
—
45
tCOH / tDOH Data Output Hold after CAS LOW
5
3
—
5
3
—
5
3
—
ns
ns
tOFF
Output Buffer Turn-Off Delay from
15
15
15
CAS or RAS(13,15,19, 29)
tWHZ
Output Disable Delay from WE
3
15
3
15
3
15
ns
ns
tCLCH
Last CAS going LOW to First CAS
10
—
10
—
10
—
returning HIGH(23)
tCSR
tCHR
tORD
CAS Setup Time (CBR REFRESH)(30, 20)
CAS Hold Time (CBR REFRESH)(30, 21)
8
8
0
—
—
—
10
10
0
—
—
—
10
10
0
—
—
—
ns
ns
ns
OE Setup Time prior to RAS during
HIDDEN REFRESH Cycle
tREF
tT
Refresh Period (512 Cycles)
—
8
—
8
—
8
ms
ns
Transition Time (Rise or Fall)(2, 3)
1
50
1
50
1
50
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
IS41C16256
IS41LV16256
®
ISSI
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device
operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH
and VIL (or between VIL and VIH) and assume to be 1 ns for all inputs.
3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in
amonotonicmanner.
4. If CAS and RAS = VIH, data output is High-Z.
5. If CAS = VIL, data output may contain data from the last valid READ cycle.
6. Measured with a load equivalent to one TTL gate and 50 pF.
7. Assumes that tRCD - tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase by
the amount that tRCD exceeds the value shown.
8. Assumes that tRCD • tRCD (MAX).
9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the
data output buffer, CAS and RAS must be pulsed for tCP.
10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD
is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC.
11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD
is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA.
12. Either tRCH or tRRH must be satisfied for a READ cycle.
13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL.
14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS •
tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD •
tRWD (MIN), tAWD • tAWD (MIN) and tCWD • tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read
from the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go
back to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled)
cycle.
15. Output parameter (I/O) is referenced to corresponding CAS input, I/O0-I/O7 by LCAS and I/O8-I/O15 by UCAS.
16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a
LATE WRITE or READ-MODIFY-WRITE is not possible.
17. Write command is defined as WE going low.
18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to
ensure that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS
remains LOW and OE is taken back to LOW after tOEH is met.
19. The I/Os are in open during READ cycles once tOD or tOFF occur.
20. The first χCAS edge to transition LOW.
21. The last χCAS edge to transition HIGH.
22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or
READ-MODIFY-WRITE cycles.
23. Last falling χCAS edge to first rising χCAS edge.
24. Last rising χCAS edge to next cycle’s last rising χCAS edge.
25. Last rising χCAS edge to first falling χCAS edge.
26. Each χCAS must meet minimum pulse width.
27. Last χCAS to go LOW.
28. I/Os controlled, regardless UCAS and LCAS.
29. The 3 ns minimum is a parameter guaranteed by design.
30. Enables on-chip refresh and address counters.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
9
06/29/00
IS41C16256
IS41LV16256
®
ISSI
READCYCLE
t
RC
t
RAS
t
RP
RAS
t
CSH
t
RSH
t
RRH
t
CRP
ASR
t
CAS CLCH
t
t
RCD
UCAS/LCAS
t
AR
t
RAD
tRAL
t
t
RAH
t
CAH
t
ASC
ADDRESS
WE
Row
Column
Row
t
RCS
t
RCH
t
AA
t
RAC
(1)
OFF
t
CAC
CLC
t
t
Open
Open
Valid Data
I/O
OE
t
OE
tOD
t
OES
Don't Care
Note:
1. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
IS41C16256
IS41LV16256
®
ISSI
EARLY WRITE CYCLE (OE = DON'T CARE)
t
RC
t
RAS
tRP
RAS
t
CSH
t
RSH
t
CRP
ASR
t
CAS CLCH
t
t
RCD
UCAS/LCAS
t
AR
t
RAD
t
t
t
RAL
CAH
ACH
t
t
RAH
t
ASC
ADDRESS
Row
Column
Row
t
t
CWL
RWL
t
WCR
t
WCS
tWCH
t
WP
WE
I/O
t
DHR
t
DH
t
DS
Valid Data
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
11
06/29/00
IS41C16256
IS41LV16256
®
ISSI
READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles)
t
t
RWC
RAS
t
RP
RAS
t
CSH
t
RSH
t
CRP
ASR
t
CAS CLCH
t
t
RCD
UCAS/LCAS
t
AR
t
RAD
t
RAL
ACH
t
t
RAH
tCAH
t
ASC
t
ADDRESS
WE
Row
Column
Row
t
RWD
tCWL
t
RCS
t
CWD
t
RWL
t
AWD
t
WP
t
AA
t
RAC
t
t
CAC
CLZ
t
DS
tDH
Open
Open
Valid DOUT
Valid DIN
I/O
OE
t
OD
tOEH
t
OE
Don't Care
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
IS41C16256
IS41LV16256
®
ISSI
EDO-PAGE-MODE READ CYCLE
t
RASP
t
RP
RAS
(1)
PC
t
CSH
t
t
RSH
t
CRP
t
RCD
t
CAS,
t
CP
t
CAS,
t
CP
t
CAS,
tCP
t
CLCH
t
CLCH
tCLCH
UCAS/LCAS
t
AR
t
RAD
t
RAL
CAH
t
ASR
t
ASC
t
CAH
t
ASC
t
CAH
t
ASC
t
ADDRESS
WE
Row
Column
Column
Column
Row
t
RAH
t
RRH
t
RCS
t
RCH
t
AA
t
AA
t
AA
t
RAC
CAC
CLZ
t
CPA
t
CPA
t
t
t
CAC
t
t
CAC
CLZ
t
COH
t
OFF
Open
Open
Valid Data
Valid Data
Valid Data
I/O
OE
t
OE
t
OEHC
tOE
t
OD
t
OES
t
OD
t
OES
t
OEP
Don't Care
Note:
1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both
measurements must meet the tPC specifications.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
13
06/29/00
IS41C16256
IS41LV16256
®
ISSI
EDO-PAGE-MODE EARLY-WRITE CYCLE
t
RASP
t
RP
RAS
t
CSH
t
PC
t
RSH
t
CRP
t
CAS,
t
CP
t
CAS,
t
CP
t
CAS,
tCP
t
RCD
t
CLCH
t
CLCH
tCLCH
UCAS/LCAS
t
AR
tACH
t
ACH
t
ACH
CAH
t
RAD
t
RAL
t
ASR
t
ASC
t
CAH
t
ASC
t
t
ASC
t
CAH
ADDRESS
Row
Column
Column
Column
Row
t
RAH
t
CWL
WCS
WCH
t
CWL
tCWL
t
t
WCS
t
WCS
t
t
WCH
tWCH
t
WP
t
WP
t
WP
WE
t
WCR
DHR
tRWL
t
tDS
tDS
tDS
t
DH
t
DH
tDH
I/O
Valid Data
Valid Data
Valid Data
OE
Don't Care
14
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
IS41C16256
IS41LV16256
®
ISSI
EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles)
t
RASP
t
RP
RAS
(1)
tPC / tPRWC
t
CSH
t
RSH
CLCH
t
CRP
t
RCD
t
CAS,
t
CLCH
t
CP
t
CAS,
t
CLCH
t
CP
t
CAS,
t
tCP
UCAS/LCAS
t
AR
t
ASR
t
t
RAD
t
RAL
t
ASC
t
CAH
t
ASC
t
CAH
t
ASC
tCAH
RAH
ADDRESS
Row
Column
Column
Column
Row
tRWD
tRCS
t
t
t
RWL
CWL
WP
t
t
CWL
WP
t
t
CWL
WP
t
AWD
t
AWD
t
AWD
t
CWD
t
CWD
t
CWD
WE
t
AA
t
AA
CPA
t
AA
tCPA
t
t
RAC
t
DH
DS
t
DH
DS
t
DH
tDS
t
t
t
CAC
t
CAC
t
CAC
t
CLZ
t
CLZ
t
CLZ
Open
Open
I/O
OE
DOUT
D
IN
DOUT
D
IN
DOUT
D
IN
t
OD
t
OD
t
OD
t
OE
t
OE
tOE
t
OEH
Don't Care
Note:
1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both
measurements must meet the tPC specifications.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
15
06/29/00
IS41C16256
IS41LV16256
®
ISSI
EDO-PAGE-MODE READ-EARLY-WRITE CYCLE (Psuedo READ-MODIFY WRITE)
t
RASP
t
RP
RAS
t
CSH
t
PC
tPC
t
RSH
t
CRP
t
RCD
t
CAS
t
CP
t
CAS
t
CP
t
CAS
tCP
UCAS/LCAS
t
AR
t
ACH
RAL
CAH
t
ASR
t
t
RAD
t
t
ASC
t
CAH
t
ASC
t
CAH
t
ASC
t
RAH
ADDRESS
WE
Row
Column (A)
Column (B)
Column (N)
Row
t
RCS
t
RCH
t
WCS
tWCH
t
WHZ
t
AA
t
AA
t
CPA
CAC
COH
t
RAC
CAC
t
t
t
t
DS
tDH
Open
Open
I/O
OE
Valid Data (A)
Valid Data (B)
DIN
t
OE
Don't Care
16
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
IS41C16256
IS41LV16256
®
ISSI
AC WAVEFORMS
READ CYCLE (With WE-Controlled Disable)
RAS
t
CSH
t
CRP
ASR
t
RCD
tCP
t
CAS
UCAS/LCAS
t
AR
t
RAD
t
t
RAH
t
CAH
tASC
t
ASC
ADDRESS
WE
Row
Column
Column
t
RCS
t
RCH
tRCS
t
AA
t
RAC
t
t
CAC
CLZ
t
WHZ
tCLZ
Open
Open
Valid Data
I/O
OE
t
OE
tOD
Don't Care
RAS-ONLY REFRESH CYCLE (OE, WE = DON'T CARE)
t
RC
t
RAS
tRP
RAS
t
CRP
t
RPC
UCAS/LCAS
t
ASR
tRAH
ADDRESS
I/O
Row
Row
Open
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
17
06/29/00
IS41C16256
IS41LV16256
®
ISSI
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)
t
RP
t
RAS
t
RP
t
RAS
RAS
t
CHR
tCHR
t
RPC
CP
tRPC
t
t
CSR
tCSR
UCAS/LCAS
I/O
Open
HIDDEN REFRESH CYCLE (WE = HIGH; OE = LOW)(1)
t
RAS
t
RAS
t
RP
RAS
t
CRP
t
RCD
t
RSH
tCHR
UCAS/LCAS
t
AR
t
RAD
t
RAL
t
ASR
t
RAH
tCAH
t
ASC
ADDRESS
Row
Column
t
AA
t
RAC
(2)
OFF
t
t
CAC
t
CLZ
Open
Open
Valid Data
I/O
OE
t
OE
tOD
t
ORD
Don't Care
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.
2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
18
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
IS41C16256
IS41LV16256
®
ISSI
ORDERING INFORMATION : 5V
ORDERING INFORMATION : 3.3V
Commercial Range: 0⋅C to 70⋅C
Commercial Range: 0⋅C to 70⋅C
Speed (ns) Order Part No.
Package
Speed (ns) Order Part No.
Package
35
IS41C16256-35K
IS41C16256-35T
400-milSOJ
400-mil TSOP (Type II)
35
IS41LV16256-35K
IS41LV16256-35T
400-milSOJ
400-mil TSOP (Type II)
60
IS41C16256-60K
IS41C16256-60T
400-milSOJ
400-mil TSOP (Type II)
60
IS41LV16256-60K
IS41LV16256-60T
400-milSOJ
400-mil TSOP (Type II)
ORDERING INFORMATION : 5V
ORDERING INFORMATION : 3.3V
Industrail Range: -40⋅C to 85⋅C
Industrail Range: -40⋅C to 85⋅C
Speed (ns) Order Part No.
Package
Speed (ns) Order Part No.
Package
50
IS41C16256-50KI
IS41C16256-50TI
400-milSOJ
400-mil TSOP (Type II)
60
IS41LV16256-60KI
IS41LV16256-60TI
400-milSOJ
400-mil TSOP (Type II)
60
IS41C16256-60KI
IS41C16256-60TI
400-milSOJ
400-mil TSOP (Type II)
®
ISSI
IntegratedSiliconSolution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: sales@issi.com
www.issi.com
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
19
06/29/00
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