IS61LF51218A-6.5TQL [ISSI]
Cache SRAM, 512KX18, 6.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100;型号: | IS61LF51218A-6.5TQL |
厂家: | INTEGRATED SILICON SOLUTION, INC |
描述: | Cache SRAM, 512KX18, 6.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100 静态存储器 内存集成电路 |
文件: | 总32页 (文件大小:630K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IS61LF25636A IS61VF25636A IS64LF25636A
IS61LF51218A IS61VF51218A
256K x 36, 512K x 18
9 Mb SYNCHRONOUS FLOW-THROUGH
STATIC RAM
AUGUST 2009
FEATURES
DESCRIPTION
The ISSIꢀ IS61LF/VF25636A,ꢀIS64LF25636AꢀandꢀIS61LF/
VF51218Aꢀ are high-speed, low-power synchronous
staticRAMsdesignedtoprovideburstable,high-performance
memory for communication and networking applications.
TheIS61LF/VF25636AꢀandꢀIS64LF25636Aꢀareꢀorganizedꢀ
asꢀ262,144ꢀwordsꢀbyꢀ36ꢀbits.ꢀTheꢀIS61LF/VF51218A is
organizedꢀasꢀ524,288ꢀwordsꢀbyꢀ18ꢀbits.ꢀFabricatedꢀwithꢀ
ISSI'sꢀadvancedꢀCMOSꢀtechnology,ꢀtheꢀdeviceꢀintegratesꢀ
aꢀ2-bitꢀburstꢀcounter,ꢀhigh-speedꢀSRAMꢀcore,ꢀandꢀhigh-
drive capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
•ꢀ Internalꢀself-timedꢀwriteꢀcycle
•ꢀ IndividualꢀByteꢀWriteꢀControlꢀandꢀGlobalꢀWrite
•ꢀ Clockꢀcontrolled,ꢀregisteredꢀaddress,ꢀdataꢀandꢀ
control
•ꢀ BurstꢀsequenceꢀcontrolꢀusingꢀMODEꢀinputꢀꢀ
•ꢀ Three chip enable option for simple depth expan-
sion and address pipelining
•ꢀ Commonꢀdataꢀinputsꢀandꢀdataꢀoutputs
•ꢀ AutoꢀPower-downꢀduringꢀdeselect
•ꢀ Singleꢀcycleꢀdeselect
Writeꢀcyclesꢀareꢀinternallyꢀself-timedꢀandꢀareꢀinitiatedꢀbyꢀtheꢀ
risingꢀedgeꢀofꢀtheꢀclockꢀinput.ꢀWriteꢀcyclesꢀcanꢀbeꢀoneꢀtoꢀ
four bytes wide as controlled by the write control inputs.
•ꢀ SnoozeꢀMODEꢀforꢀreduced-powerꢀstandby
•ꢀ JTAGꢀBoundaryꢀScanꢀforꢀPBGAꢀpackage
•ꢀ PowerꢀSupply
Separate byte enables allow individual bytes to be written.
Byteꢀwriteꢀoperationꢀisꢀperformedꢀbyꢀusingꢀbyteꢀwriteꢀen-
able (BWE) input combined with one or more individual
byte write signals (BWx). Inꢀaddition,ꢀGlobalꢀWriteꢀ(GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
LF: Vd d 3.3V + 5%, Vd d q 3.3V/2.5V + 5%
VF: Vd d 2.5V + 5%, Vd d q 2.5V + 5%
BurstsꢀcanꢀbeꢀinitiatedꢀwithꢀeitherꢀADSP (Address Status
Processor)ꢀorꢀADSC (Address Status Cache Controller)
inputꢀpins.ꢀSubsequentꢀburstꢀaddressesꢀcanꢀbeꢀgener-
ated internally and controlled by the ADV (burst address
advance) input pin.
•ꢀ JEDECꢀ100-PinꢀTQFP,ꢀ119-pinꢀPBGA,ꢀandꢀ165-
pinꢀPBGAꢀpackages
•ꢀ Lead-freeꢀavailable
•ꢀ Automotiveꢀtemperatureꢀavailable
Theꢀmodeꢀpinꢀisꢀusedꢀtoꢀselectꢀtheꢀburstꢀsequenceꢀorder,ꢀ
LinearꢀburstꢀisꢀachievedꢀwhenꢀthisꢀpinꢀisꢀtiedꢀLOW.ꢀInter-
leaveꢀburstꢀisꢀachievedꢀwhenꢀthisꢀpinꢀisꢀtiedꢀHIGHꢀorꢀleftꢀ
floating.
FAST ACCESS TIME
Symbol
Parameter
-6.5
6.5ꢀ
7.5ꢀ
133ꢀ
-7.5
7.5ꢀ
8.5ꢀ
117ꢀ
Units
ns
tk q
tk c
ꢀ
ClockꢀAccessꢀTimeꢀ
CycleꢀTimeꢀ
ns
ꢀ
Frequencyꢀ
MHz
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc.
1
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
BLOCK DIAGRAM
MODE
A0'
Q0
A0
CLK
CLK
BINARY
COUNTER
Q1
CE
A1'
ADV
A1
256Kx36;
512Kx18;
MEMORY ARRAY
ADSC
ADSP
CLR
18/19
16/17
18/19
D
Q
A
ADDRESS
REGISTER
CE
CLK
36,
or 18
36,
or 18
D
Q
GW
BWE
DQ(a-d)
BYTE WRITE
REGISTERS
BW(a-d)
x18: a,b
x36: a-d
CLK
36,
or 18
CE
CE2
CE2
2/4/8
INPUT
D
Q
DQa - DQd
REGISTERS
ENABLE
OE
REGISTER
CLK
CE
CLK
POWER
DOWN
ZZ
OE
2
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
119-PIN BGA
119-Ball,ꢀ14x22ꢀmmꢀBGA
165-PIN BGA
165-Ball,ꢀ13x15ꢀmmꢀBGA
BOTTOMꢀVIEW
BOTTOMꢀVIEW
Integrated Silicon Solution, Inc.ꢀ
3
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
119 BGA PACKAGE PIN CONFIGURATION-256k x 36 (TOP VIEW)
1
2
3
4
5
6
7
A
B
C
D
E
F
VDDQ
NC
A
A
A
ADSP
ADSC
VDD
NC
A
A
A
A
VDDQ
NC
CE2
A
NC
A
A
A
NC
DQc
DQc
VDDQ
DQc
DQc
VDDQ
DQd
DQd
VDDQ
DQd
DQd
NC
DQPc
DQc
DQc
DQc
DQc
VDD
Vss
Vss
Vss
BWc
Vss
NC
Vss
Vss
Vss
BWb
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
DQPb
DQb
DQb
DQb
DQb
VDD
DQa
DQa
DQa
DQa
DQPa
A
DQbꢀꢀꢀ
DQb
VDDQ
DQb
DQb
VDDQ
DQa
DQa
VDDQ
DQa
DQa
NC
CE
OE
G
H
J
ADV
GW
VDD
CLK
NC
K
L
DQd
DQd
DQd
DQd
DQPd
A
Vss
BWd
Vss
Vss
Vss
MODE
A
M
N
P
R
T
BWE
A1*
A0*
VDD
A
NC
NC
NC
ZZ
U
VDDQ
TMS
TDI
TCK
TDO
NC
VDDQ
Note: * A0 and A1ꢀareꢀtheꢀtwoꢀleastꢀsignificantꢀbitsꢀ(LSB)ꢀofꢀtheꢀaddressꢀfieldꢀandꢀsetꢀtheꢀinternalꢀburstꢀcounterꢀifꢀburstꢀisꢀdesired.ꢀ
PIN DESCRIPTIONS
Symbol
OE
Pin Name
Symbol
A
Pin Name
OutputꢀEnable
Address Inputs
ZZꢀ
PowerꢀSleepꢀModeꢀ
BurstꢀSequenceꢀSelection
JTAGꢀPins
A0,ꢀA1ꢀ
ADVꢀ
SynchronousꢀBurstꢀAddressꢀInputsꢀ
MODE
TCK,ꢀTDO
ꢀꢀTMS,ꢀTDI
NC
SynchronousꢀBurstꢀAddressꢀ
Advance
ADSP
ADSC
GWꢀ
AddressꢀStatusꢀProcessor
Address Status Controller
GlobalꢀWriteꢀEnable
No Connect
DQa-DQd
DQPa-Pdꢀ
Vd d
DataꢀInputs/Outputs
OutputꢀPowerꢀSupply
PowerꢀSupply
CLK
Synchronous Clock
CE,ꢀCE2
Synchronous Chip Select
BWxꢀ(x=a-d)ꢀ SynchronousꢀByteꢀWriteꢀControls
BWE ByteꢀWriteꢀEnable
Vd d q
OutputꢀPowerꢀSupply
Ground
Vss
4ꢀ
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
119 BGA PACKAGE PIN CONFIGURATION
512kx18 (TOP VIEW)
1
2
3
4
5
6
7
A
B
C
D
E
F
VDDQ
NC
A
CE2
A
A
A
ADSP
ADSC
VDD
NC
A
A
A
A
VDDQ
NC
NC
A
A
A
NC
DQb
NC
NC
Vss
Vss
Vss
BWb
Vss
NC
Vss
Vss
Vss
Vss
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
DQPa
NC
DQa
NC
DQa
VDD
NC
DQa
NC
DQa
NC
A
NC
DQb
NC
CE
DQa
VDDQ
DQa
NC
VDDQ
NC
OE
G
H
J
DQb
NC
ADV
GW
VDD
CLK
NC
DQb
VDDQ
NC
VDD
DQb
NC
VDDQ
DQa
NC
K
L
Vss
Vss
Vss
Vss
Vss
MODE
A
DQb
VDDQ
DQb
NC
M
N
P
R
T
DQb
NC
BWE
A1*
VDDQ
NC
DQPb
A
A0*
DQa
NC
NC
VDD
NC
NC
A
A
ZZ
U
VDDQ
TMS
TDI
TCK
TDO
NC
VDDQ
Note: * A0 and A1ꢀareꢀtheꢀtwoꢀleastꢀsignificantꢀbitsꢀ(LSB)ꢀofꢀtheꢀaddressꢀfieldꢀandꢀsetꢀtheꢀinternalꢀburstꢀcounterꢀifꢀburstꢀisꢀdesired.ꢀ
PIN DESCRIPTIONS
Symbol
OE
Pin Name
Symbol
A
Pin Name
Address Inputs
OutputꢀEnable
A0, A1
SynchronousꢀBurstꢀAddressꢀInputsꢀ
ZZꢀ
PowerꢀSleepꢀModeꢀ
BurstꢀSequenceꢀSelection
JTAGꢀPins
ADVꢀ
SynchronousꢀBurstꢀAddressꢀ
Advance
MODE
TCK,ꢀTDO
TMS,ꢀTDI
NC
ADSP
ADSC
GWꢀ
AddressꢀStatusꢀProcessor
Address Status Controller
GlobalꢀWriteꢀEnable
No Connect
DQa-DQb
DQPa-Pbꢀ
Vd d
DataꢀInputs/Outputs
OutputꢀPowerꢀSupply
PowerꢀSupply
CLK
Synchronous Clock
CE,ꢀCE2
Synchronous Chip Select
BWxꢀ(x=a,b)ꢀ SynchronousꢀByteꢀWriteꢀControls
BWE ByteꢀWriteꢀEnable
Vd d q
OutputꢀPowerꢀSupply
Ground
Vss
Integrated Silicon Solution, Inc.ꢀ
5
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
165 PBGA PACKAGE PIN CONFIGURATION
256k x 36 (TOP VIEW)
1
2
3
4
5
6
7
8
ADSC
OE
9
10
A
11
NC
A
B
C
D
E
F
NC
A
CE
BWc
BWd
Vss
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vss
A
BWb
BWa
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
CE2
CLK
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
BWE
GW
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
ADV
ADSP
Vd d q
Vd d q
Vd d q
Vd d q
Vd d q
Nc
NC
A
CE2
Vd d q
Vd d q
Vd d q
Vd d q
Vd d q
NC
A
NC
DQPb
DQb
DQb
DQb
DQb
ZZ
DQPc
DQc
DQc
DQc
DQc
NC
NC
Vss
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vss
A
Nc
DQb
DQb
DQb
DQb
Nc
dqa
dqa
dqa
dqa
NC
A
DQc
DQc
DQc
DQc
Vss
DQd
DQd
DQd
DQd
NC
G
H
J
DQd
DQd
DQd
DQd
DQPd
NC
Vd d q
Vd d q
Vd d q
Vd d q
Vd d q
A
Vd d q
Vd d q
Vd d q
Vd d q
Vd d q
A
dqa
dqa
dqa
dqa
DQPa
A
K
L
M
N
P
R
NC
TDI
TMS
A1*
A0*
TDO
TCK
MODE
NC
A
A
A
A
A
A
Note: * A0 and A1ꢀareꢀtheꢀtwoꢀleastꢀsignificantꢀbitsꢀ(LSB)ꢀofꢀtheꢀaddressꢀfieldꢀandꢀsetꢀtheꢀinternalꢀburstꢀcounterꢀifꢀburstꢀisꢀdesired.ꢀ
PIN DESCRIPTIONS
Symbol
BWE
OE
Pin Name
Symbol
A
Pin Name
Address Inputs
ByteꢀWriteꢀEnable
OutputꢀEnable
PowerꢀSleepꢀModeꢀ
A0, A1
SynchronousꢀBurstꢀAddressꢀInputsꢀ
ADVꢀ
SynchronousꢀBurstꢀAddressꢀ
Advance
ZZꢀ
MODE
BurstꢀSequenceꢀSelection
JTAGꢀPins
ADSP
AddressꢀStatusꢀProcessor
Address Status Controller
GlobalꢀWriteꢀEnable
TCK,ꢀTDO
TMS,ꢀTDI
ADSC
GW
NC
No Connect
CLK
Synchronous Clock
DQx
DQPxꢀ
Vd d
DataꢀInputs/Outputs
DataꢀInputs/Outputs
3.3V/2.5VꢀPowerꢀSupply
CE, CE2, CE2
Synchronous Chip Select
BWxꢀ(x=a,b,c,d)ꢀ SynchronousꢀByteꢀWriteꢀꢀ
ꢀ
Controls
Vd d q
ꢀ
IsolatedꢀOutputꢀPowerꢀSupplyꢀꢀꢀꢀꢀ ꢀ
3.3V/2.5V
Vssꢀ
Ground
6
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
165 PBGA PACKAGE PIN CONFIGURATION
512k x 18 (TOP VIEW)
1
NC
2
3
4
5
6
7
8
ADSC
OE
9
10
A
11
A
A
B
C
D
E
F
A
CE
BWb
NC
Vss
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vss
A
NC
CE2
CLK
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
BWE
GW
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
ADV
ADSP
Vd d q
Vd d q
Vd d q
Vd d q
Vd d q
Nc
NC
A
CE2
Vd d q
Vd d q
Vd d q
Vd d q
Vd d q
NC
BWa
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
A
NC
DQPa
DQa
DQa
DQa
DQa
ZZ
NC
NC
DQb
DQb
DQb
DQb
Vss
NC
NC
NC
NC
NC
NC
NC
Vss
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vd d
Vss
A
Nc
NC
NC
NC
NC
Nc
dqa
dqa
dqa
dqa
NC
A
NC
NC
NC
G
H
J
NC
NC
DQb
DQb
DQb
DQb
DQPb
NC
Vd d q
Vd d q
Vd d q
Vd d q
Vd d q
A
Vd d q
Vd d q
Vd d q
Vd d q
Vd d q
A
Nc
Nc
Nc
Nc
NC
A
K
L
M
N
P
R
TDI
TMS
A1*
A0*
TDO
TCK
MODE
A
A
A
A
A
A
Note: * A0 and A1ꢀareꢀtheꢀtwoꢀleastꢀsignificantꢀbitsꢀ(LSB)ꢀofꢀtheꢀaddressꢀfieldꢀandꢀsetꢀtheꢀinternalꢀburstꢀcounterꢀifꢀburstꢀisꢀdesired.ꢀ
PIN DESCRIPTIONS
Symbol
A
Pin Name
Address Inputs
Symbol
BWE
OE
Pin Name
ByteꢀWriteꢀEnable
OutputꢀEnable
A0, A1
SynchronousꢀBurstꢀAddressꢀInputsꢀ
ADVꢀ
SynchronousꢀBurstꢀAddressꢀ
ZZꢀ
PowerꢀSleepꢀModeꢀ
BurstꢀSequenceꢀSelection
JTAGꢀPins
Advance
MODE
ADSP
ADSC
GW
AddressꢀStatusꢀProcessor
Address Status Controller
GlobalꢀWriteꢀEnableꢀ
TCK,ꢀTDO
TMS,ꢀTDI
NC
No Connect
CLK
Synchronous Clock
DQx
DQPxꢀ
Vd d
DataꢀInputs/Outputs
DataꢀInputs/Outputs
3.3V/2.5VꢀPowerꢀSupply
CE, CE2, CE2 Synchronous Chip Select
BWxꢀ(x=a,b)ꢀ
SynchronousꢀByteꢀWriteꢀꢀ
Controls
ꢀ
Vd d q
ꢀ
IsolatedꢀOutputꢀPowerꢀSupplyꢀꢀꢀꢀꢀ ꢀ
3.3V/2.5V
Vssꢀ
Ground
Integrated Silicon Solution, Inc.
7
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
PIN CONFIGURATION
100-PIN TQFP (256K ꢀ 36)
99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
100
99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
100
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb
DQb
DQb
VDDQ
VSS
DQb
DQb
DQb
DQb
VSS
VDDQ
DQb
DQb
VSS
NC
DQPc
DQc
DQc
VDDQ
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
DQc
DQc
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb
DQb
DQb
DQPc
DQc
DQc
VDDQ
V
DDQ
VSS
DQb
DQb
DQb
DQb
VSS
VSS
DQc
DQc
DQc
DQc
VSS
V
DDQ
V
DDQ
DQb
DQb
VSS
NC
DQc
DQc
NC
VDD
NC
V
DD
NC
VDD
ZZ
V
DD
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
VSS
VDDQ
DQd
DQd
DQPd
ZZ
DQa
DQa
VSS
DQd
DQd
DQa
DQa
VDDQ
VSS
DQa
DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
DQPa
VDDQ
V
V
DDQ
VSS
DQa
DQa
DQa
DQa
VSS
VSS
DQd
DQd
DQd
DQd
VSS
V
DDQ
DDQ
DQa
DQa
DQPa
DQd
DQd
DQPd
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
(2 Chip-Enable option)
(3 Chip-Enable option)
PIN DESCRIPTIONS
DQa-DQdꢀ
DQPa-DQPdꢀ ParityꢀDataꢀInput/Output
GWꢀ SynchronousꢀGlobalꢀWriteꢀEnable
MODEꢀꢀ ꢀ
SynchronousꢀDataꢀInput/Output
A0, A1
Synchronous Address Inputs. These
pinsꢀmustꢀtiedꢀtoꢀtheꢀtwoꢀLSBsꢀofꢀtheꢀ
address bus.
ꢀ
A
Synchronous Address Inputs
BurstꢀSequenceꢀModeꢀSelection
OutputꢀEnable
ADSC
ADSP
ADV
Synchronous Controller Address Status
SynchronousꢀProcessorꢀAddressꢀStatus
SynchronousꢀBurstꢀAddressꢀAdvance
SynchronousꢀByteꢀWriteꢀEnable
SynchronousꢀByteꢀWriteꢀEnable
OEꢀ
ꢀ
ꢀ
Vd d ꢀ
Vd d q ꢀ
3.3V/2.5VꢀPowerꢀSupply
ꢀ
ꢀ
IsolatedꢀOutputꢀBufferꢀSupply:
3.3V/2.5V
BWa-BWdꢀ
BWEꢀ
Vssꢀ
ZZꢀ
ꢀ
ꢀ
Ground
CE, CE2, CE2ꢀ SynchronousꢀChipꢀEnable
CLK Synchronous Clock
SnoozeꢀEnable
8ꢀ
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
PIN CONFIGURATION
100-PIN TQFP (512K ꢀ 18)
99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
100
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
A
NC
NC
VDDQ
VSS
NC
DQPa
DQa
DQa
VSS
VDDQ
DQa
DQa
VSS
NC
NC
NC
NC
VDDQ
VSS
NC
1
2
3
4
5
6
7
8
9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
NC
NC
NC
NC
NC
DDQ
VDDQ
V
VSS
NC
DQPa
DQa
DQa
VSS
VSS
NC
NC
DQb
DQb
VSS
NC
DQb
DQb
VSS
VDDQ
DQb
DQb
NC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
VDDQ
V
DDQ
DQb
DQb
NC
DQa
DQa
VSS
NC
VDD
NC
V
DD
VDD
ZZ
VDD
NC
VSS
DQb
DQb
VSS
DQb
DQb
VDDQ
VSS
DQb
DQb
DQPb
NC
VSS
VDDQ
NC
NC
NC
ZZ
DQa
DQa
DQa
DQa
VDDQ
VSS
DQa
DQa
NC
VDDQ
V
DDQ
VSS
DQb
DQb
DQPb
NC
VSS
DQa
DQa
NC
NC
VSS
NC
VSS
VDDQ
NC
NC
NC
VSS
VDDQ
V
DDQ
NC
NC
NC
NC
NC
NC
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
(3 Chip-Enable Option)
(2 Chip-Enable Option)
PIN DESCRIPTIONS
DQPa-DQPbꢀ ParityꢀDataꢀI/O;ꢀDQPaꢀisꢀparityꢀforꢀꢀ
A0, A1
Synchronous Address Inputs. These
pinsꢀmustꢀtiedꢀtoꢀtheꢀtwoꢀLSBsꢀofꢀtheꢀ
address bus.
ꢀ
DQa1-8;ꢀDQPbꢀisꢀparityꢀforꢀDQb1-8
GWꢀ
ꢀ
SynchronousꢀGlobalꢀWriteꢀEnable
BurstꢀSequenceꢀModeꢀSelection
OutputꢀEnable
A
Synchronous Address Inputs
MODEꢀꢀ ꢀ
ADSC
ADSP
ADV
Synchronous Controller Address Status
SynchronousꢀProcessorꢀAddressꢀStatus
SynchronousꢀBurstꢀAddressꢀAdvance
SynchronousꢀByteꢀWriteꢀEnable
SynchronousꢀByteꢀWriteꢀEnable
OEꢀ
ꢀ
ꢀ
Vd d ꢀ
Vd d q ꢀ
3.3V/2.5VꢀPowerꢀSupply
ꢀ
ꢀ
IsolatedꢀOutputꢀBufferꢀSupply:
3.3V/2.5V
BWa-BWbꢀ
BWEꢀ
Vssꢀ
ZZꢀ
ꢀ
ꢀ
Ground
CE,ꢀCE2,ꢀCE2ꢀ SynchronousꢀChipꢀEnable
SnoozeꢀEnable
CLK
Synchronous Clock
DQa-DQbꢀ
SynchronousꢀDataꢀInput/Output
Integrated Silicon Solution, Inc.
9
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
TRUTH TABLE(1-8)
OPERATION
ADDRESS CE CE2 CE2 ZZ ADSP ADSC ADV WRITE OE CLK
DQ
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Q
DeselectꢀCycle,ꢀPower-Downꢀ
DeselectꢀCycle,ꢀPower-Downꢀ
DeselectꢀCycle,ꢀPower-Downꢀ
DeselectꢀCycle,ꢀPower-Downꢀ
DeselectꢀCycle,ꢀPower-Downꢀ
SnoozeꢀꢀMode,ꢀPower-Downꢀ
ReadꢀCycle,ꢀBeginꢀBurstꢀ
ReadꢀCycle,ꢀBeginꢀBurstꢀ
WriteꢀCycle,ꢀBeginꢀBurstꢀ
ReadꢀCycle,ꢀBeginꢀBurstꢀ
ReadꢀCycle,ꢀBeginꢀBurstꢀ
ReadꢀCycle,ꢀContinueꢀBurstꢀ
ReadꢀCycle,ꢀContinueꢀBurstꢀ
ReadꢀCycle,ꢀContinueꢀBurstꢀ
ReadꢀCycle,ꢀContinueꢀBurstꢀ
WriteꢀCycle,ꢀContinueꢀBurstꢀ
WriteꢀCycle,ꢀContinueꢀBurstꢀ
ReadꢀCycle,ꢀSuspendꢀBurstꢀ
ReadꢀCycle,ꢀSuspendꢀBurstꢀ
ReadꢀCycle,ꢀSuspendꢀBurstꢀ
ReadꢀCycle,ꢀSuspendꢀBurstꢀ
WriteꢀCycle,ꢀSuspendꢀBurstꢀ
WriteꢀCycle,ꢀSuspendꢀBurstꢀ
NOTE:
Noneꢀ
Noneꢀ
Hꢀ
Lꢀ
Xꢀ
Xꢀ
Hꢀ
Xꢀ
Hꢀ
Xꢀ
Lꢀ
Xꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Hꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Lꢀ
Xꢀ
Lꢀ
Lꢀ
Xꢀ
Xꢀ
Lꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Lꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Lꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Lꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
Xꢀ
Noneꢀ
Lꢀ
Xꢀ
Lꢀ
Lꢀ
Noneꢀ
Lꢀ
Hꢀ
Hꢀ
Xꢀ
Lꢀ
Noneꢀ
Lꢀ
Xꢀ
Xꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Lꢀ
Noneꢀ
Xꢀ
Lꢀ
Xꢀ
Xꢀ
Xꢀ
Lꢀ
Externalꢀ
Externalꢀ
Externalꢀ
Externalꢀ
Externalꢀ
Nextꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
L-Hꢀ
Lꢀ
Lꢀ
Lꢀ
Hꢀ
Xꢀ
Lꢀ
High-Z
D
Lꢀ
Lꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Xꢀ
Xꢀ
Hꢀ
Xꢀ
Hꢀ
Hꢀ
Xꢀ
Xꢀ
Hꢀ
Xꢀ
Lꢀ
Lꢀ
Lꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Lꢀ
ꢀQ
Lꢀ
Lꢀ
Lꢀ
Hꢀ
Lꢀ
High-Z
Q
Xꢀ
Xꢀ
Hꢀ
Hꢀ
Xꢀ
Hꢀ
Xꢀ
Xꢀ
Hꢀ
Hꢀ
Xꢀ
Hꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Xꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Nextꢀ
Lꢀ
Hꢀ
Lꢀ
High-Z
Q
Nextꢀ
Lꢀ
Nextꢀ
Lꢀ
Hꢀ
Xꢀ
Xꢀ
Lꢀ
High-Z
D
Nextꢀ
Lꢀ
Nextꢀ
Lꢀ
Lꢀ
D
Currentꢀ
Currentꢀ
Currentꢀ
Currentꢀ
Currentꢀ
Currentꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Hꢀ
Lꢀ
Q
Hꢀ
Lꢀ
High-Z
Q
Hꢀ
Xꢀ
Xꢀ
High-Z
D
Lꢀ
D
1.ꢀ Xꢀmeansꢀ“Don’tꢀCare.”ꢀHꢀmeansꢀlogicꢀHIGH.ꢀLꢀmeansꢀlogicꢀLOW.
2. For WRITE, L means one or more byte write enable signals (BWa-d) and BWEꢀareꢀLOWꢀorꢀGWꢀisꢀLOW.ꢀWRITE = H for all
BWx, BWE, GWꢀHIGH.
3.ꢀ BWaꢀenablesꢀWRITEsꢀtoꢀDQa’sꢀandꢀDQPa.ꢀBWbꢀenablesꢀWRITEsꢀtoꢀDQb’sꢀandꢀDQPb.ꢀBWcꢀenablesꢀWRITEsꢀtoꢀDQc’sꢀ andꢀ
DQPc.ꢀBWdꢀenablesꢀWRITEsꢀtoꢀDQd’sꢀandꢀDQPd.ꢀDQPaꢀandꢀDQPbꢀareꢀavailableꢀonꢀtheꢀx18ꢀversion.ꢀ DQPa-DQPdꢀareꢀavail-
ableꢀonꢀtheꢀx36ꢀversion.
4.ꢀ AllꢀinputsꢀexceptꢀOEꢀandꢀZZꢀmustꢀmeetꢀsetupꢀandꢀholdꢀtimesꢀaroundꢀtheꢀrisingꢀedgeꢀ(LOWꢀtoꢀHIGH)ꢀofꢀCLK.
5.ꢀ Waitꢀstatesꢀareꢀinsertedꢀbyꢀsuspendingꢀburst.
6.ꢀ ForꢀaꢀWRITEꢀoperationꢀfollowingꢀaꢀREADꢀoperation,ꢀOEꢀmustꢀbeꢀHIGHꢀbeforeꢀtheꢀinputꢀdataꢀsetupꢀtimeꢀandꢀheldꢀHIGHꢀduringꢀ
the input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8.ꢀ ADSPꢀLOWꢀalwaysꢀinitiatesꢀanꢀinternalꢀREADꢀatꢀtheꢀL-HꢀedgeꢀofꢀCLK.ꢀAꢀWRITEꢀisꢀperformedꢀbyꢀsettingꢀoneꢀorꢀmoreꢀbyteꢀwriteꢀ
enable signals and BWEꢀLOWꢀorꢀGWꢀLOWꢀforꢀtheꢀsubsequentꢀL-HꢀedgeꢀofꢀCLK.ꢀSeeꢀWRITEꢀtimingꢀdiagramꢀforꢀclarification.
PARTIAL TRUTH TABLE
Function
Read
GW
BWE
H
BWa
X
BWb
X
BWc
X
BWd
X
H
Read
H
L
H
H
H
H
WriteꢀByteꢀ1ꢀ
WriteꢀAllꢀBytesꢀ
WriteꢀAllꢀBytesꢀ
Hꢀ
Hꢀ
Lꢀ
Lꢀ
Lꢀ
Xꢀ
Lꢀ
Lꢀ
Xꢀ
Hꢀ
Lꢀ
Xꢀ
Hꢀ
Lꢀ
Xꢀ
Hꢀ
Lꢀ
Xꢀ
10
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
INTERLEAVED BURST ADDRESS TABLE (MODE = VD D or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAꢀIMUM RATINGS(1)
Symbol Parameter
Value
–55ꢀtoꢀ+150ꢀ
1.6ꢀ
Unit
°C
W
Ts T g
Pd
StorageꢀTemperatureꢀ
PowerꢀDissipationꢀ
IO u T ꢀ
OutputꢀCurrentꢀ(perꢀI/O)ꢀ
100ꢀ
mA
V
V
VIN, VO u T ꢀ VoltageꢀRelativeꢀtoꢀVssꢀforꢀI/OꢀPinsꢀ
–0.5ꢀtoꢀVd d q + 0.5
–0.5ꢀtoꢀVd d + 0.5
VINꢀ
VoltageꢀRelativeꢀtoꢀVssꢀforꢀꢀ
for Address and Control Inputs
Vd d
Voltage on Vd d ꢀSupplyꢀRelativeꢀtoꢀVssꢀ
–0.5ꢀtoꢀ4.6
V
Notes:
1.ꢀꢀStressꢀgreaterꢀthanꢀthoseꢀlistedꢀunderꢀABSOLUTEꢀMAXIMUMꢀRATINGSꢀmayꢀcauseꢀperma-
nent damage to the device.This is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the operational sections of this
specificationꢀisꢀnotꢀimplied.ꢀExposureꢀtoꢀabsoluteꢀmaximumꢀratingꢀconditionsꢀforꢀextendedꢀ
periods may affect reliability.
2.This device contains circuity to protect the inputs against damage due to high static voltages
orꢀelectricꢀfields;ꢀhowever,ꢀprecautionsꢀmayꢀbeꢀtakenꢀtoꢀavoidꢀapplicationꢀofꢀanyꢀvoltageꢀ
higher than maximum rated voltages to this high-impedance circuit.
3.ꢀThisꢀdeviceꢀcontainsꢀcircuitryꢀthatꢀwillꢀensureꢀtheꢀoutputꢀdevicesꢀareꢀinꢀHigh-Zꢀatꢀpowerꢀup.
Integrated Silicon Solution, Inc.
11
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
OPERATING RANGE (IS61LFxxxxx)
Range
Commercialꢀ
Industrialꢀ
Ambient Temperature
0°Cꢀtoꢀ+70°Cꢀ
VD D
3.3Vꢀ±ꢀ5%ꢀ
3.3Vꢀ±ꢀ5%ꢀ
VD D q
ꢀ3.3V/2.5Vꢀ±ꢀ5%
3.3V/2.5Vꢀ±ꢀ5%
ꢀ
ꢀ
-40°Cꢀtoꢀ+85°Cꢀ
OPERATING RANGE (IS64LFxxxxx)
Range
Ambient Temperature
VD D
VD D q
ꢀ
Automotiveꢀ
-40°Cꢀtoꢀ+125°Cꢀ
3.3Vꢀ±ꢀ5%ꢀ
3.3V/2.5Vꢀ±ꢀ5%
OPERATING RANGE (IS61VFxxxxx)
Range
Commercialꢀ
Industrialꢀ
Ambient Temperature
0°Cꢀtoꢀ+70°Cꢀ
VD D
2.5Vꢀ±ꢀ5%ꢀ
2.5Vꢀ±ꢀ5%ꢀ
VD D q
ꢀ2.5Vꢀ±ꢀ5%
2.5Vꢀ±ꢀ5%
ꢀ
ꢀ
-40°Cꢀtoꢀ+85°Cꢀ
DC ELECTRICAL CHARACTERISTICS (OverꢀOperatingꢀRange)
3.3V
2.5V
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
VO h
OutputꢀHIGHꢀVoltageꢀ
IO h = –4.0ꢀmAꢀ (3.3V)ꢀ
IO h = –1.0 mA (2.5V)
2.4ꢀ
—ꢀ
2.0ꢀ
—ꢀ
V
VO l
OutputꢀLOWꢀVoltageꢀ
IO l = 8.0ꢀmA (3.3V)ꢀ
IO l = 1.0 mA (2.5V)
—ꢀ
0.4ꢀ
—ꢀ
0.4ꢀ
V
VIh
VIl
Il I
InputꢀHIGHꢀVoltageꢀꢀ
InputꢀLOWꢀVoltage
ꢀ
2.0ꢀ
–0.3ꢀ
–5ꢀ
Vd d + 0.3
1.7
–0.3ꢀ
–5ꢀ
Vd d + 0.3
V
V
ꢀ
0.8ꢀ
5ꢀ
0.7ꢀ
5ꢀ
Input Leakage Current
OutputꢀLeakageꢀCurrent
Vs s ≤ VIN ≤ Vd d (1)ꢀ
µA
µA
Il O
Vs s ≤ VO u T ≤ Vd d q , OE = VIhꢀ
–5ꢀ
5ꢀ
–5ꢀ
5ꢀ
POWER SUPPLY CHARACTERISTICS(1) (OverꢀOperatingꢀRange)
6.5
7.5
MAꢀ
MAꢀ
Symbol Parameter
Test Conditions
Temp. range
x18
x36
x18
x36
Unit
Ic c
ACꢀOperatingꢀ
Supply Current
DeviceꢀSelected,ꢀꢀ
OE = VIh, ZZ ≤ VIl,
Com.ꢀ
Ind.
185ꢀ 185ꢀ
190ꢀ 190ꢀ
ꢀ
ꢀ
175ꢀ 175ꢀ
185ꢀ 185ꢀ
mA
All Inputs ≤ 0.2V or ≥ Vd d – 0.2V, Au T O .
Cycle Time ≥ tk c min.
225
225
Is b
StandbyꢀCurrentꢀ
TTL Input
DeviceꢀDeselected,ꢀꢀ
Vd d = Max.,ꢀ
All Inputs ≤ VIl or ≥ VIh,
ZZ ≤ VIl, fꢀ=ꢀMax.
Com.
Ind.ꢀ
Au T O .
140
150ꢀ 150ꢀ
140
140
150ꢀ 150ꢀ
150
140
mA
ꢀ
ꢀ
150
Is b Iꢀ
StandbyꢀCurrentꢀ
cMOs Input
DeviceꢀDeselected,ꢀ
Vd d = Max.,ꢀ
Com.ꢀ
Ind.ꢀ
Auto.
80
85ꢀ
80
85ꢀ
80
85ꢀ
90
80
85ꢀ
90
mA
VIN
≤
Vs s +ꢀ0.2Vꢀorꢀ≥Vd d – 0.2V
f = 0
Note:
1.ꢀ MODEꢀpinꢀhasꢀanꢀinternalꢀpullupꢀandꢀshouldꢀbeꢀtiedꢀtoꢀVd d or Vs s . It exhibits 100 ꢀA maximum leakage current when tied to ≤ Vs s ꢀ+ꢀ0.2Vꢀorꢀ≥ Vd d – 0.2V.
12
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
CAPACITANCE(1,2)
Symbol
cIN
Parameter
Conditions
VIN = 0V
Max.
Unit
pF
Input Capacitance
Input/OutputꢀCapacitanceꢀ
6
8
cO u T ꢀ
VO u T = 0V
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°c, fꢀ=ꢀ1ꢀMHz,ꢀVd d ꢀ=ꢀ3.3V.
3.3V I/O AC TEST CONDITIONS
Parameter
InputꢀPulseꢀLevelꢀ
InputꢀRiseꢀandꢀFallꢀTimesꢀ
Unit
0Vꢀtoꢀ3.0V
1.5ꢀns
ꢀ
ꢀ
InputꢀandꢀOutputꢀTimingꢀ
1.5V
and Reference Level
ꢀ
OutputꢀLoadꢀ
SeeꢀFiguresꢀ1ꢀandꢀ2
AC TEST LOADS
317 Ω
3.3V
ZO = 50Ω
OUTPUT
OUTPUT
50Ω
351 Ω
5 pF
Including
jig and
1.5V
scope
Figure 1
Figure 2
Integrated Silicon Solution, Inc.ꢀ
13
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
2.5V I/O AC TEST CONDITIONS
Parameter
InputꢀPulseꢀLevelꢀ
InputꢀRiseꢀandꢀFallꢀTimesꢀ
Unit
0Vꢀtoꢀ2.5V
1.5ꢀns
ꢀ
ꢀ
InputꢀandꢀOutputꢀTimingꢀ
1.25V
and Reference Level
ꢀ
OutputꢀLoadꢀ
SeeꢀFiguresꢀ3ꢀandꢀ4
2.5V I/O OUTPUT LOAD EQUIVALENT
1,667 Ω
+2.5V
ZO = 50Ω
OUTPUT
OUTPUT
50Ω
5 pF
Including
jig and
scope
1,538 Ω
1.25V
Figure 3
Figure 4
14
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
READ/WRITE CYCLE SWITCHING CHARACTERISTICS(1) (OverꢀOperatingꢀRange)
6.5
Min.
7.5
Min. Max.
Symbol
ꢀ fmaxꢀ
Parameter
Max.
133ꢀ
—ꢀ
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ClockꢀFrequencyꢀ
—ꢀ
7.5ꢀ
2.2ꢀ
2.2ꢀ
—ꢀ
—ꢀ 117ꢀ
8.5ꢀ —ꢀ
2.5ꢀ —ꢀ
2.5ꢀ —ꢀ
—ꢀ 7.5ꢀ
2.5ꢀ —ꢀ
2.5ꢀ —ꢀ
—ꢀ 4.0ꢀ
—ꢀ 3.4ꢀ
tk c ꢀ
tk h ꢀ
tk l ꢀ
tk q ꢀ
CycleꢀTimeꢀ
ClockꢀHighꢀTimeꢀ
—ꢀ
ClockꢀLowꢀTimeꢀ
—ꢀ
ClockꢀAccessꢀTimeꢀꢀ
6.5ꢀ
—ꢀ
(2)
tk q x ꢀ
tk q l Z (2,3)ꢀ
tk q h Z (2,3)ꢀ
tO E q ꢀ
tO E l Z (2,3)ꢀ
tO E h Z (2,3)ꢀ
tA s ꢀ
ClockꢀHighꢀtoꢀOutputꢀInvalidꢀ
ClockꢀHighꢀtoꢀOutputꢀLow-Zꢀ
ClockꢀHighꢀtoꢀOutputꢀHigh-Zꢀꢀ
OutputꢀEnableꢀtoꢀOutputꢀValidꢀꢀ
OutputꢀEnableꢀtoꢀOutputꢀLow-Zꢀ
OutputꢀDisableꢀtoꢀOutputꢀHigh-Zꢀꢀ
AddressꢀSetupꢀTimeꢀꢀ
AddressꢀStatusꢀSetupꢀTimeꢀꢀ
Read/WriteꢀSetupꢀTimeꢀꢀ
ChipꢀEnableꢀSetupꢀTimeꢀꢀ
AddressꢀAdvanceꢀSetupꢀTimeꢀꢀ
DataꢀSetupꢀTimeꢀ
2.5ꢀ
2.5ꢀ
—ꢀ
—ꢀ
3.8ꢀ
3.2ꢀ
—ꢀꢀ
3.5ꢀ
—ꢀ
—ꢀ
0ꢀ
0ꢀꢀ
—ꢀ
—ꢀ
—ꢀ 3.5ꢀ
1.5ꢀ —ꢀ
1.5ꢀ —ꢀ
1.5ꢀ —ꢀ
1.5ꢀ —ꢀ
1.5ꢀ —ꢀ
1.5ꢀ —ꢀ
0.5ꢀ —ꢀ
0.5ꢀ —ꢀ
0.5ꢀꢀ —ꢀ
0.5ꢀꢀ —ꢀ
0.5ꢀꢀ —ꢀ
0.5ꢀ —ꢀ
1.5ꢀ
1.5ꢀ
1.5ꢀ
1.5ꢀ
1.5ꢀ
1.5ꢀ
0.5ꢀ
0.5ꢀ
0.5ꢀ
0.5ꢀ
0.5ꢀ
0.5ꢀ
ts s ꢀ
—ꢀ
tW s ꢀ
—ꢀ
tc E s ꢀ
tA V s ꢀ
—ꢀ
—ꢀ
td s ꢀ
—ꢀ
tA h
Address Hold Time
—ꢀ
ts h
Address Status Hold Time
WriteꢀHoldꢀTimeꢀꢀ
—ꢀ
tW h ꢀ
—ꢀ
tc E h ꢀ
tA V h ꢀ
ChipꢀEnableꢀHoldꢀTimeꢀꢀ
AddressꢀAdvanceꢀHoldꢀTimeꢀꢀ
DataꢀHoldꢀTimeꢀ
—ꢀ
—ꢀ
td h ꢀ
—ꢀ
Notes:
1.ꢀ ConfigurationꢀsignalꢀMODEꢀisꢀstaticꢀandꢀmustꢀnotꢀchangeꢀduringꢀnormalꢀoperation.
2.ꢀ Guaranteedꢀbutꢀnotꢀ100%ꢀtested.ꢀThisꢀparameterꢀisꢀperiodicallyꢀsampled.
3.ꢀ TestedꢀwithꢀloadꢀinꢀFigureꢀ2.
Integrated Silicon Solution, Inc.ꢀ
15
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
READ/WRITE CYCLE TIMING
tKC
CLK
ADSP
ADSC
t
KH
tKL
ADSP is blocked by CE inactive
t
SS
tSH
t
SS
tSH
ADV
t
AS
tAH
Address
RD1
WR1
RD2
RD3
t
t
WS
WS
t
t
WH
GW
BWE
WH
tWS
tWH
WR1
BWd-BWa
t
CES
tCEH
CE Masks ADSP
CE
CE2
CE2
t
t
CES
CES
t
t
CEH
CEH
CE2 and CE2 only sampled with ADSP or ADSC
Unselected with CE2
t
OELZ
OEQ
tOEHZ
t
OE
t
KQX
High-Z
KQLZ
KQ
High-Z
DATAOUT
2a
2b
2c
2d
1a
t
tKQLZ
t
KQHZ
t
KQX
t
tKQ
High-Z
1a
DATAIN
tDS
tDH
Single Write
Burst Read
Single Read
Flow-through
Unselected
16
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
WRITE CYCLE TIMING
tKC
CLK
ADSP
ADSC
t
KH
tKL
ADSP is blocked by CE1 inactive
ADSC initiate Write
tSS
tSH
t
AVH
t
AVS
ADV must be inactive for ADSP Write
ADV
tAS
tAH
Address
WR1
WR2
WR3
t
t
WS
WS
t
t
WH
WH
GW
BWE
tWS
tWH
tWS
tWH
BWd-BWa
WR1
WR2
CE1 Masks ADSP
WR3
t
CES
tCEH
CE
CE2
CE2
t
CES
CES
t
CEH
CEH
Unselected with CE2
CE2 and CE3 only sampled with ADSP or ADSC
t
t
OE
DATAOUT
DATAIN
High-Z
tDS
tDH
BW4-BW1 only are applied to first cycle of WR2
2a 2b 2c 2d
High-Z
3a
1a
Burst Write
Single Write
Write
Unselected
Integrated Silicon Solution, Inc.
17
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
SNOOZE MODE ELECTRICAL CHARACTERISTICS
Symbol Parameter
Conditions
Temp. Range
Min. Max.
Unit
Is b 2ꢀ
ꢀ
ꢀ
CurrentꢀduringꢀSNOOZEꢀMODEꢀ
ꢀ
ꢀ
ZZꢀ≥ꢀVihꢀ
Com.ꢀ
Ind.ꢀ
Auto.ꢀ
—ꢀ
—ꢀ
—ꢀ
55ꢀ
60ꢀ
75
mAꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
tP d s ꢀ
tP u s ꢀ
tZ Z I ꢀ
ZZꢀactiveꢀtoꢀinputꢀignoredꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
—ꢀ
2ꢀ
2ꢀ
—ꢀ
2ꢀ
cycle
cycle
cycle
ns
ZZꢀinactiveꢀtoꢀinputꢀsampledꢀ
ZZꢀactiveꢀtoꢀSNOOZEꢀcurrentꢀ
ZZꢀinactiveꢀtoꢀexitꢀSNOOZEꢀcurrentꢀ
—ꢀ
0ꢀ
tr Z Z I ꢀ
—ꢀ
SNOOZE MODE TIMING
CLK
t
PDS
t
ZZ setup cycle
ZZ recovPeUryS cycle
ZZ
t
ZZI
Isupply
ISB2
tRZZI
All Inputs
Deselect or Read Only
Deselect or Read Only
(except ZZ)
Normal
operation
cycle
Outputs
(Q)
High-Z
Don't Care
18
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
IEEE 1149.1 SERIAL BOUNDARY SCAN (JTAG)
TEST ACCESS PORT (TAP) - TEST CLOCK
Theꢀ IS61LF/VF25636Aꢀ andꢀ IS61LF/VF51218Aꢀ haveꢀ aꢀ
serialꢀboundaryꢀscanꢀTestꢀAccessꢀPortꢀ(TAP)ꢀinꢀtheꢀPBGAꢀ
package only.This port operates in accordance with IEEE
Standardꢀ1149.1-1900,ꢀbutꢀdoesꢀnotꢀincludeꢀallꢀfunctionsꢀ
requiredꢀforꢀfullꢀ1149.1ꢀcompliance.ꢀTheseꢀfunctionsꢀfromꢀ
the IEEEꢀ specification are excluded because they place
addedꢀdelayꢀinꢀtheꢀcriticalꢀspeedꢀpathꢀofꢀtheꢀSRAM.ꢀTheꢀ
TAPꢀcontrollerꢀoperatesꢀinꢀaꢀmannerꢀthatꢀdoesꢀnotꢀconflictꢀ
withꢀtheꢀperformanceꢀofꢀotherꢀdevicesꢀusingꢀ1149.1ꢀfullyꢀ
compliantꢀTAPs.ꢀTheꢀTAPꢀoperatesꢀusingꢀJEDECꢀstandardꢀ
2.5VꢀI/Oꢀlogicꢀlevels.
TheꢀtestꢀclockꢀisꢀonlyꢀusedꢀwithꢀtheTAPꢀcontroller.ꢀAllꢀinputsꢀ
are captured on the rising edge of TCK and outputs are
driven from the falling edge of TCK.
TEST MODE SELECT (TMS)
TheꢀTMSꢀinputꢀisꢀusedꢀtoꢀsendꢀcommandsꢀtoꢀtheꢀTAPꢀ
controller and is sampled on the rising edge of TCK. This
pinꢀmayꢀbeꢀleftꢀdisconnectedꢀifꢀtheꢀTAPꢀisꢀnotꢀused.ꢀTheꢀpinꢀ
isꢀinternallyꢀpulledꢀup,ꢀresultingꢀinꢀaꢀlogicꢀHIGHꢀlevel.
TEST DATA-IN (TDI)
TheꢀTDIꢀpinꢀisꢀusedꢀtoꢀseriallyꢀinputꢀinformationꢀtoꢀtheꢀ
registers and can be connected to the input of any regis-
ter.ꢀTheꢀregisterꢀbetweenꢀTDIꢀandꢀTDOꢀisꢀchosenꢀbyꢀtheꢀ
instructionꢀ loadedꢀ intoꢀ theꢀTAPꢀ instructionꢀ register.ꢀ Forꢀ
informationꢀonꢀinstructionꢀregisterꢀloading,ꢀseeꢀtheꢀTAPꢀ
ControllerꢀStateꢀDiagram.ꢀTDIꢀisꢀinternallyꢀpulledꢀupꢀandꢀ
canꢀbeꢀdisconnectedꢀifꢀtheꢀTAPꢀisꢀunusedꢀinꢀanꢀapplica-
tion.ꢀTDIꢀisꢀconnectedꢀtoꢀtheꢀMostꢀSignificantꢀBitꢀ(MSB)ꢀ
on any register.
DISABLING THE JTAG FEATURE
TheꢀSRAMꢀcanꢀoperateꢀwithoutꢀusingꢀtheꢀJTAGꢀfeature.ꢀ
Toꢀ disableꢀ theꢀTAPꢀ controller,ꢀTCKꢀ mustꢀ beꢀ tiedꢀ LOWꢀ
(Vss)ꢀtoꢀpreventꢀclockingꢀofꢀtheꢀdevice.ꢀTDIꢀandꢀTMSꢀareꢀ
internally pulled up and may be disconnected. They may
alternately be connected toVd d through a pull-up resistor.
TDOꢀshouldꢀbeꢀleftꢀdisconnected.ꢀOnꢀpower-up,ꢀtheꢀdeviceꢀ
will start in a reset state which will not interfere with the
device operation.
TAP CONTROLLER BLOCK DIAGRAM
0
Bypass Register
2
1
0
Instruction Register
TDI
Selection Circuitry
Selection Circuitry
TDO
31 30 29 . . .
2
2
1
1
0
0
Identification Register
x
. . . . .
Boundary Scan Register*
TCK
TMS
TAP CONTROLLER
Integrated Silicon Solution, Inc.
19
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
TEST DATA OUT (TDO)
Boundary Scan Register
TheꢀTDOꢀoutputꢀpinꢀisꢀusedꢀtoꢀseriallyꢀclockꢀdata-outꢀfromꢀ
The boundary scan register is connected to all input and
theregisters.Theoutputisactivedependingonthecurrent
state of the TAP state machine (see TAP Controller State
Diagram).ꢀTheꢀoutputꢀchangesꢀonꢀtheꢀfallingꢀedgeꢀofꢀTCKꢀ
andꢀTDOꢀisꢀconnectedꢀtoꢀtheꢀLeastꢀSignificantꢀBitꢀ(LSB)ꢀ
of any register.
output pins on the SRAM.Several no connect (NC) pins are
also included in the scan register to reserve pins for higher
densityꢀdevices.ꢀTheꢀx36ꢀconfigurationꢀhasꢀaꢀ75-bit-longꢀ
registerꢀandꢀtheꢀx18ꢀconfigurationꢀalsoꢀhasꢀaꢀ75-bit-longꢀ
register. The boundary scan register is loaded with the
contentsꢀofꢀtheꢀRAMꢀInputꢀandꢀOutputꢀringꢀwhenꢀtheꢀTAPꢀ
controllerꢀisꢀinꢀtheꢀCapture-DRꢀstateꢀandꢀthenꢀplacedꢀbe-
tween the TDI and TDO pins when the controller is moved
to the Shift-DRꢀstate.ꢀTheꢀEXTEST,ꢀSAMPLE/PRELOADꢀ
andꢀSAMPLE-Zꢀinstructionsꢀcanꢀbeꢀusedꢀtoꢀcaptureꢀtheꢀ
contentsꢀofꢀtheꢀInputꢀandꢀOutputꢀring.
PERFORMING A TAP RESET
AꢀResetꢀisꢀperformedꢀbyꢀforcingꢀTMSꢀHIGHꢀ(Vd d ) for five
risingꢀedgesꢀofꢀTCK.ꢀRESETꢀmayꢀbeꢀperformedꢀwhileꢀtheꢀ
SRAMꢀisꢀoperatingꢀandꢀdoesꢀnotꢀaffectꢀitsꢀoperation.ꢀAtꢀ
power-up,ꢀtheꢀTAPꢀisꢀinternallyꢀresetꢀtoꢀensureꢀthatꢀTDOꢀ
comes up in a high-Z state.
TheꢀBoundaryꢀScanꢀOrderꢀtablesꢀshowꢀtheꢀorderꢀinꢀwhichꢀ
theꢀbitsꢀareꢀconnected.ꢀEachꢀbitꢀcorrespondsꢀtoꢀoneꢀofꢀtheꢀ
bumpsꢀonꢀtheꢀSRAMꢀpackage.ꢀTheꢀMSBꢀofꢀtheꢀregisterꢀisꢀ
connectedꢀtoꢀTDI,ꢀandꢀtheꢀLSBꢀisꢀconnectedꢀtoꢀTDO.
TAP REGISTERS
RegistersꢀareꢀconnectedꢀbetweenꢀtheꢀTDIꢀandꢀTDOꢀpinsꢀ
andꢀallowꢀdataꢀtoꢀbeꢀscannedꢀintoꢀandꢀoutꢀofꢀtheꢀSRAMꢀ
test circuitry. Onlyꢀoneꢀregisterꢀcanꢀbeꢀselectedꢀatꢀaꢀtimeꢀ
throughꢀtheꢀinstructionꢀregisters.ꢀDataꢀisꢀseriallyꢀloadedꢀ
intoꢀtheꢀTDIꢀpinꢀonꢀtheꢀrisingꢀedgeꢀofꢀTCKꢀandꢀoutputꢀonꢀ
theꢀTDOꢀpinꢀonꢀtheꢀfallingꢀedgeꢀofꢀTCK.
Scan Register Sizes
Register Name
Bit Size Bit Size
(x18)
(x36)
Instruction Register
Instructionꢀ
Bypassꢀ
3ꢀ
3ꢀ
Three-bit instructions can be serially loaded into the in-
struction register.This register is loaded when it is placed
between the TDI and TDO pins. (See TAPꢀControllerꢀBlockꢀ
Diagram)ꢀ Atꢀpower-up,ꢀtheꢀinstructionꢀregisterꢀisꢀloadedꢀ
withꢀtheꢀIDCODEꢀinstruction.ꢀItꢀisꢀalsoꢀloadedꢀwithꢀtheꢀ
IDCODEꢀinstructionꢀifꢀtheꢀcontrollerꢀisꢀplacedꢀinꢀaꢀresetꢀ
state as previously described.
1ꢀ
1ꢀ
IDꢀ
32ꢀ
75ꢀ
32ꢀ
75ꢀ
BoundaryꢀScanꢀ
Identification (ID) Register
WhenꢀtheꢀTAPꢀcontrollerꢀisꢀinꢀtheꢀCaptureIRꢀstate,ꢀtheꢀtwoꢀ
leastꢀsignificantꢀbitsꢀareꢀloadedꢀwithꢀaꢀbinaryꢀ“01”ꢀpatternꢀtoꢀ
allow for fault isolation of the board level serial test path.
TheꢀIDꢀregisterꢀisꢀloadedꢀwithꢀaꢀvendor-specific,ꢀ32-bitꢀ
codeꢀduringꢀtheꢀCapture-DRꢀstateꢀwhenꢀtheꢀIDCODEꢀcom-
mandꢀisꢀloadedꢀtoꢀtheꢀinstructionꢀregister.ꢀTheꢀIDCODEꢀ
isꢀhardwiredꢀintoꢀtheꢀSRAMꢀandꢀcanꢀbeꢀshiftedꢀoutꢀwhenꢀ
theꢀTAPꢀcontrollerꢀisꢀinꢀtheꢀShift-DRꢀstate.ꢀTheꢀIDꢀregisterꢀ
has vendor code and other information described in the
IdentificationꢀRegisterꢀDefinitionsꢀtable.
Bypass Register
To save time when serially shifting data through registers,
it is sometimes advantageous to skip certain states. The
bypass register is a single-bit register that can be placed
betweenꢀTDIꢀandꢀTDOꢀpins.ꢀThisꢀallowsꢀdataꢀtoꢀbeꢀshiftedꢀ
through the SRAM with minimal delay. The bypass reg-
isterꢀisꢀsetꢀLOWꢀ(Vss)ꢀwhenꢀtheꢀBYPASSꢀinstructionꢀisꢀ
executed.
IDENTIFICATION REGISTER DEFINITIONS
Instruction Field
Description
256K x 36
xxxxꢀ
512K x 18
xxxxꢀ
RevisionꢀNumberꢀ (31:28)ꢀꢀ Reservedꢀforꢀversionꢀnumber.ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
DeviceꢀDepthꢀ (27:23)ꢀ
DeviceꢀWidthꢀ (22:18)ꢀ
ISSIꢀDeviceꢀIDꢀ (17:12)ꢀ
ISSIꢀJEDECꢀIDꢀ (11:1)ꢀ
IDꢀRegisterꢀPresenceꢀ (0)ꢀ
DefinesꢀdepthꢀofꢀSRAM.ꢀ256Kꢀorꢀ512Kꢀ
DefinesꢀwithꢀofꢀtheꢀSRAM.ꢀx36ꢀorꢀx18ꢀ
Reservedꢀforꢀfutureꢀuse.ꢀ
00111ꢀ
01000ꢀ
00011ꢀ
xxxxxꢀ
00100ꢀ
xxxxxꢀ
AllowsꢀuniqueꢀidentificationꢀofꢀSRAMꢀvendor.ꢀ
IndicateꢀtheꢀpresenceꢀofꢀanꢀIDꢀregister.ꢀ
00011010101ꢀ
1ꢀ
00011010101
1ꢀ
20
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
The
TAPꢀcontrollerꢀrecognizesꢀanꢀall-0ꢀinstruction.Whenꢀanꢀ
Eightꢀinstructionsꢀareꢀpossibleꢀwithꢀtheꢀthree-bitꢀinstructionꢀ
register and all combinations are listed in the Instruction
Code table. Three instructions are listed as RESERVED
and should not be used and the other five instructions are
describedꢀbelow.ꢀTheꢀTAPꢀcontrollerꢀusedꢀinꢀthisꢀSRAMꢀ
isꢀnotꢀfullyꢀcompliantꢀwithꢀtheꢀ1149.1ꢀconventionꢀbecauseꢀ
some mandatory instructions are not fully implemented.
TheꢀTAPꢀcontrollerꢀcannotꢀbeꢀusedꢀtoꢀloadꢀaddress,ꢀdataꢀorꢀ
control signals and cannot preload the Input or Output buf-
fers.The SRAM does not implement the 1149.1 commands
EXTEST or INTEST or the PRELOAD portion of SAMPLE/
PRELOAD;ꢀinsteadꢀitꢀperformsꢀaꢀcaptureꢀofꢀtheꢀInputs and
Output ring when these instructions are executed. Instruc-
tionsꢀareꢀloadedꢀintoꢀtheꢀTAPꢀcontrollerꢀduringꢀtheꢀShift-IRꢀ
stateꢀwhenꢀtheꢀinstructionꢀregisterꢀisꢀplacedꢀbetweenꢀTDIꢀ
andꢀTDO.ꢀDuringꢀthisꢀstate,ꢀinstructionsꢀareꢀshiftedꢀfromꢀ
theꢀinstructionꢀregisterꢀthroughꢀtheꢀTDIꢀandꢀTDOꢀpins.ꢀToꢀ
executeꢀanꢀinstructionꢀonceꢀitꢀisꢀshiftedꢀin,ꢀtheꢀTAPꢀcontrol-
lerꢀmustꢀbeꢀmovedꢀintoꢀtheꢀUpdate-IRꢀstate.
SAMPLE/PRELOADꢀisꢀaꢀ1149.1ꢀmandatoryꢀinstruction.Theꢀ
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
TAP INSTRUCTION SET
SAMPLE/PRELOAD
PRELOADꢀportionꢀofꢀthisꢀinstructionꢀisꢀnotꢀimplemented,ꢀsoꢀ
theꢀTAPꢀcontrollerꢀisꢀnotꢀfullyꢀ1149.1ꢀcompliant.ꢀWhenꢀtheꢀ
SAMPLE/PRELOADꢀinstructionꢀisꢀloadedꢀtoꢀtheꢀinstruc-
tionꢀregisterꢀandꢀtheꢀTAPꢀcontrollerꢀisꢀinꢀtheꢀCapture-DRꢀ
state, a snapshot of data on the inputs and output pins is
captured in the boundary scan register.
ItꢀisꢀimportantꢀtoꢀrealizeꢀthatꢀtheꢀTAPꢀcontrollerꢀclockꢀoper-
atesꢀatꢀaꢀfrequencyꢀupꢀtoꢀ10ꢀMHz,ꢀwhileꢀtheꢀSRAMꢀclockꢀ
runsꢀmoreꢀthanꢀanꢀorderꢀofꢀmagnitudeꢀfaster.ꢀBecauseꢀofꢀ
theꢀclockꢀfrequencyꢀdifferences,ꢀitꢀisꢀpossibleꢀthatꢀduringꢀ
theꢀCapture-DRꢀstate,ꢀanꢀinputꢀorꢀoutputꢀwillꢀunder-goꢀaꢀ
transition.ꢀTheꢀTAPꢀmayꢀattemptꢀaꢀsignalꢀcaptureꢀwhileꢀinꢀ
transition(metastablestate).Thedevicewillnotbeharmed,
but there is no guarantee of the value that will be captured
or repeatable results.
To guarantee that the boundary scan register will capture
theꢀcorrectꢀsignalꢀvalue,ꢀtheꢀSRAMꢀsignalꢀmustꢀbeꢀstabilizedꢀ
longꢀenoughꢀtoꢀmeetꢀtheꢀTAPꢀcontroller’sꢀcaptureꢀset-upꢀ
plusholdtimes(tc s andtc h ).ꢀToꢀinsureꢀthatꢀtheꢀSRAMꢀclockꢀ
input is captured correctly, designs need a way to stop (or
slow)ꢀtheꢀclockꢀduringꢀaꢀSAMPLE/PRELOADꢀinstruction.ꢀ
If this is not an issue, it is possible to capture all other
signals and simply ignore the value of the CLK and CLK
captured in the boundary scan register.
EꢀTEST
EXTESTꢀisꢀaꢀmandatoryꢀ1149.1ꢀinstructionꢀwhichꢀisꢀtoꢀbeꢀ
executed whenever the instruction register is loaded with
allꢀ0s.ꢀBecauseꢀEXTESTꢀisꢀnotꢀimplementedꢀinꢀtheꢀTAPꢀ
controller,ꢀthisꢀdeviceꢀisꢀnotꢀ1149.1ꢀstandardꢀcompliant.ꢀ
Onceꢀtheꢀdataꢀisꢀcaptured,ꢀitꢀisꢀpossibleꢀtoꢀshiftꢀoutꢀtheꢀdataꢀ
byꢀputtingꢀtheꢀTAPꢀintoꢀtheꢀShift-DRꢀstate.ꢀThisꢀplacesꢀtheꢀ
boundaryꢀscanꢀregisterꢀbetweenꢀtheꢀTDIꢀandꢀTDOꢀpins.
EXTESTꢀinstructionꢀisꢀloadedꢀintoꢀtheꢀinstructionꢀregister,ꢀ
theꢀSRAMꢀrespondsꢀasꢀifꢀaꢀSAMPLE/PRELOADꢀinstructionꢀ
hasbeenloaded.Thereisadifferencebetweenthe instruc-
tions, unlike the SAMPLE/PRELOADꢀinstruction,ꢀEXTESTꢀ
placesꢀtheꢀSRAMꢀoutputsꢀinꢀaꢀHigh-Zꢀstate.
Note that since the PRELOAD part of the command is not
implemented, putting the TAP into the Update to the Update-
DR state while performing a SAMPLE/PRELOAD instruction
willꢀhaveꢀtheꢀsameꢀeffectꢀasꢀtheꢀPause-DRꢀcommand.
IDCODE
Theꢀ IDCODEꢀ instructionꢀ causesꢀ aꢀ vendor-specific,ꢀ 32-
bit code to be loaded into the instruction register. It also
placesꢀtheꢀinstructionꢀregisterꢀbetweenꢀtheꢀTDIꢀandꢀTDOꢀ
pinsꢀandꢀallowsꢀtheꢀIDCODEꢀtoꢀbeꢀshiftedꢀoutꢀofꢀtheꢀdeviceꢀ
whenꢀtheꢀTAPꢀcontrollerꢀentersꢀtheꢀShift-DRꢀstate.ꢀTheꢀ
IDCODEꢀinstructionꢀisꢀloadedꢀintoꢀtheꢀinstructionꢀregisterꢀ
uponꢀpower-upꢀorꢀwheneverꢀtheꢀTAPꢀcontrollerꢀisꢀgivenꢀaꢀ
test logic reset state.
BYPASS
WhenꢀtheꢀBYPASSꢀinstructionꢀisꢀloadedꢀinꢀtheꢀinstruc-
tionꢀregisterꢀandꢀtheꢀTAPꢀisꢀplacedꢀinꢀaꢀShift-DRꢀstate,ꢀ
theꢀbypassꢀregisterꢀisꢀplacedꢀbetweenꢀtheꢀTDIꢀandꢀTDOꢀ
pins.ꢀTheꢀadvantageꢀofꢀtheꢀBYPASSꢀinstructionꢀisꢀthatꢀitꢀ
shortens the boundary scan path when multiple devices
are connected together on a board.
SAMPLE-Z
RESERVED
Theꢀ SAMPLE-Zꢀ instructionꢀ causesꢀ theꢀ boundaryꢀ scanꢀ
registerꢀtoꢀbeꢀconnectedꢀbetweenꢀtheꢀTDIꢀandꢀTDOꢀpinsꢀ
whenꢀtheꢀTAPꢀcontrollerꢀisꢀinꢀaꢀShift-DRꢀstate.ꢀItꢀalsoꢀplacesꢀ
allꢀSRAMꢀoutputsꢀintoꢀaꢀHigh-Zꢀstate.
These instructions are not implemented but are reserved
forꢀfutureꢀuse.ꢀDoꢀnotꢀuseꢀtheseꢀinstructions.
Integrated Silicon Solution, Inc.
21
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
INSTRUCTION CODES
Code
Instruction
Description
000ꢀ
EXTESTꢀ
CapturesꢀtheꢀInput/Outputꢀringꢀcontents.ꢀPlacesꢀtheꢀboundaryꢀscanꢀregisterꢀbe-
tweenꢀtheꢀTDIꢀandꢀTDO.ꢀForcesꢀallꢀSRAMꢀoutputsꢀtoꢀHigh-Zꢀstate.ꢀThisꢀ
instructionꢀisꢀnotꢀ1149.1ꢀcompliant.
001ꢀ
010ꢀ
IDCODEꢀ
LoadsꢀtheꢀIDꢀregisterꢀwithꢀtheꢀvendorꢀIDꢀcodeꢀandꢀplacesꢀtheꢀregisterꢀbetweenꢀTDIꢀ
andꢀTDO.ꢀThisꢀoperationꢀdoesꢀnotꢀaffectꢀSRAMꢀoperation.
SAMPLE-Zꢀ
CapturesꢀtheꢀInput/Outputꢀcontents.ꢀPlacesꢀtheꢀboundaryꢀscanꢀregisterꢀbetweenꢀ
TDIꢀandꢀTDO.ꢀForcesꢀallꢀSRAMꢀoutputꢀdriversꢀtoꢀaꢀHigh-Zꢀstate.
011ꢀ
RESERVEDꢀ
DoꢀNotꢀUse:ꢀThisꢀinstructionꢀisꢀreservedꢀforꢀfutureꢀuse.
100
SAMPLE/PRELOAD
ꢀ
CapturesꢀtheꢀInput/Outputꢀringꢀcontents.ꢀPlacesꢀtheꢀboundaryꢀscanꢀregisterꢀ
between TDIꢀandꢀTDO.ꢀDoesꢀnotꢀaffectꢀtheꢀSRAMꢀoperation.ꢀThisꢀinstructionꢀdoesꢀnotꢀ
implementꢀ1149.1ꢀpreloadꢀfunctionꢀandꢀisꢀthereforeꢀnotꢀ1149.1ꢀcompliant.
101ꢀ
110ꢀꢀ
111ꢀ
RESERVEDꢀ
RESERVEDꢀ
BYPASSꢀ
DoꢀNotꢀUse:ꢀThisꢀinstructionꢀisꢀreservedꢀforꢀfutureꢀuse.ꢀꢀ
DoꢀNotꢀUse:ꢀThisꢀinstructionꢀisꢀreservedꢀforꢀfutureꢀuse.
PlacesꢀtheꢀbypassꢀregisterꢀbetweenꢀTDIꢀandꢀTDO.ꢀThisꢀoperationꢀdoesꢀnot
affectꢀSRAMꢀoperation.
TAP CONTROLLER STATE DIAGRAM
Test Logic Reset
1
0
1
1
1
Run Test/Idle
Select DR
0
Select IR
0
0
1
1
Capture DR
0
Capture IR
0
Shift DR
1
Shift IR
1
0
0
1
1
Exit1 DR
0
Exit1 IR
0
Pause DR
1
Pause IR
1
0
0
Exit2 DR
1
Exit2 IR
1
0
1
0
1
Update DR
0
Update IR
0
22
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
TAP Electrical Characteristics OverꢀtheꢀOperatingꢀRange(1,2)
Symbol
VO h 1
VO h 2
VO l 1
VO l 2
VIh
Parameter
Test Conditions
IO h = –2.0 mAꢀ
IO h = –100 µA
IO l = 2.0 mAꢀ
IO l = 100 µAꢀ
Min.
1.7ꢀ
2.1ꢀ
—ꢀ
Max.
—ꢀ
Units
V
OutputꢀHIGHꢀVoltage
OutputꢀHIGHꢀVoltage
OutputꢀLOWꢀVoltage
OutputꢀLOWꢀVoltage
InputꢀHIGHꢀVoltage
InputꢀLOWꢀVoltage
Input Load Current
—ꢀ
V
0.7
V
—ꢀ
0.2
V
1.7
Vd d ꢀ+0.3
0.7
V
VIl
IO l T = 2mA
–0.3ꢀ
–5ꢀ
V
Ix
Vss ≤ V I ≤ Vd d q
5ꢀ
mA
Notes:
1.ꢀ AllꢀVoltageꢀreferencedꢀtoꢀGround.
2.ꢀ Overshoot:ꢀVIh (AC) ≤ Vd d ꢀ+1.5Vꢀforꢀtꢀ≤ tT c y c /2,
ꢀ
ꢀ
Undershoot:ꢀVilꢀ(AC)ꢀ≤ꢀ0.5Vꢀforꢀtꢀ≤ tT c y c /2,
Power-up:ꢀVIh < 2.6V and Vd d ꢀ<ꢀ2.4VꢀandꢀVd d q ꢀ<ꢀ1.4Vꢀforꢀtꢀ<ꢀ200ꢀms.
TAP AC ELECTRICAL CHARACTERISTICS(1,2) (OVER OPERATING RANGE)
Symbol Parameter
Min.
100ꢀ
—ꢀ
Max.
—ꢀ
10ꢀ
—
Unit
ns
tT c y c
fT f
TCK Clock cycle time
TCKꢀClockꢀfrequencyꢀ
ꢀ
ꢀ
ꢀ
ꢀ
MHz
ns
tT h
TCKꢀClockꢀHIGH
40ꢀ
40ꢀ
10ꢀ
10ꢀ
10ꢀ
10ꢀ
10ꢀ
10ꢀ
—ꢀ
tT l
TCKꢀClockꢀLOWꢀ
—
ns
tT M s s
tT d Is
tc s
TMSꢀsetupꢀtoꢀTCKꢀClockꢀRise
TDIꢀsetupꢀtoꢀTCKꢀClockꢀRise
Capture setup to TCK Rise
TMSꢀholdꢀafterꢀTCKꢀClockꢀRise
TDIꢀHoldꢀafterꢀClockꢀRise
Capture hold after Clock Rise
TCKꢀLOWꢀtoꢀTDOꢀvalidꢀ
TCKꢀLOWꢀtoꢀTDOꢀinvalid
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
20
ns
ns
ns
tT M s h
tT d Ih
tc h
ns
ns
ns
tT d O V
ꢀ
ꢀ
ns
tT d O x
0ꢀ
—ꢀ
ns
Notes:
1. Both tc s and tc h refer to the set-up and hold time requirements of latching data from the boundary scan register.
2. Test conditions are specified using the load in TAP AC test conditions. tr/tf = 1 ns.
Integrated Silicon Solution, Inc.ꢀ
23
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
TAP Output Load Equivalent
TAP AC TEST CONDITIONS
Inputꢀpulseꢀlevelsꢀ
0ꢀtoꢀ2.5V/0ꢀtoꢀ3.0V
1ns
Input rise and fall times
Inputꢀtimingꢀreferenceꢀlevelsꢀ
Outputꢀreferenceꢀlevelsꢀ
1.25V/1.5V
1.25V/1.5V
50Ω
Testꢀloadꢀterminationꢀsupplyꢀvoltageꢀ
1.25V/1.5V
1.25V/1.5V
TDO
20 pF
GND
Z0 = 50Ω
TAP TIMING
1
2
3
4
5
6
tTHTH
t
TLTH
TCK
TMS
t
THTL
t
MVTH
DVTH
t
THMX
t
t
THDX
TDI
tTLOV
TDO
t
TLOX
DON'T CARE
UNDEFINED
24
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
119 BGA BOUNDARY SCAN ORDER (256K ꢀ 36)
Signal Bump
Signal Bump
Signal Bump
Signal Bump
Bit # Name
ID
Bit # Name
ID
Bit # Name
ID
Bit # Name
ID
2K
1L
ꢀ 1ꢀ
ꢀ 2ꢀ
ꢀ 3ꢀ
ꢀ 4ꢀ
ꢀ 5ꢀ
ꢀ 6ꢀ
ꢀ 7ꢀ
ꢀ 8ꢀ
ꢀ 9ꢀ
ꢀ10ꢀ
ꢀ11ꢀ
ꢀ12ꢀ
ꢀ13ꢀ
ꢀ14ꢀ
ꢀ15ꢀ
ꢀ16ꢀ
ꢀ17ꢀ
ꢀ18ꢀ
Aꢀ
Aꢀ
2Rꢀ
3Tꢀ
4Tꢀ
5Tꢀ
6Rꢀ
3Bꢀ
5Bꢀ
6Pꢀ
7Nꢀ
6Mꢀ
7Lꢀ
6Kꢀ
7Pꢀ
6Nꢀ
6Lꢀ
7Kꢀ
7Tꢀ
6Hꢀ
19ꢀ
20ꢀ
21ꢀ
22ꢀ
23ꢀ
24ꢀ
25ꢀ
26ꢀ
27ꢀ
28ꢀ
29ꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
Aꢀ
7Gꢀ
6Fꢀ
7Eꢀ
7Dꢀ
7Hꢀ
6Gꢀ
6Eꢀ
6Dꢀ
6Aꢀ
5Aꢀ
4Gꢀ
37ꢀ
38ꢀ
39ꢀ
40ꢀ
41ꢀ
42ꢀ
43ꢀ
44ꢀ
45ꢀ
46ꢀ
47ꢀ
48ꢀ
49ꢀ
50ꢀ
51ꢀ
52ꢀ
53ꢀ
54ꢀ
BWaꢀ
BWbꢀ
BWcꢀ
BWdꢀ
CE2ꢀ
CEꢀ
5Lꢀ
5Gꢀ
3Gꢀ
3Lꢀ
2Bꢀ
4Eꢀ
3Aꢀ
2Aꢀ
2Dꢀ
1Eꢀ
2Fꢀ
1Gꢀ
2Hꢀ
1Dꢀ
2Eꢀ
2Gꢀ
1H
55ꢀ
56ꢀ
57ꢀ
58ꢀ
59ꢀ
60ꢀ
61ꢀ
62ꢀ
63ꢀ
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
Aꢀ
2M
1N
1P
1K
2L
Aꢀ
Aꢀ
Aꢀ
Aꢀ
Aꢀ
DQaꢀ
DQaꢀ
DQaꢀ
DQaꢀ
DQaꢀ
DQaꢀ
DQaꢀ
DQaꢀ
DQaꢀ
ZZꢀ
Aꢀ
2N
2P
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
NCꢀ
Aꢀ
64ꢀ MODEꢀ 3R
ADVꢀ
65ꢀ
66ꢀ
67ꢀ
68ꢀ
69ꢀ
70ꢀ
Aꢀ
Aꢀ
2C
3C
5C
6C
4N
4P
30ꢀ ADSPꢀ 4Aꢀ
31ꢀ ADSCꢀ 4Bꢀ
Aꢀ
32ꢀ
33ꢀ
34ꢀ
35ꢀ
36ꢀ
OEꢀ
4Fꢀ
Aꢀ
BWEꢀ 4Mꢀ
A1ꢀ
A0ꢀ
GWꢀ
CLKꢀ
Aꢀ
4Hꢀ
4Kꢀ
6Bꢀ
DQbꢀ
5R
119 BGA BOUNDARY SCAN ORDER (512K ꢀ 18)
Signal Bump
Signal Bump
Signal Bump
Signal Bump
Bit # Name
ID
Bit # Name
ID
Bit # Name
ID
Bit # Name
ID
2K
1L
ꢀ 1ꢀ
ꢀ 2ꢀ
ꢀ 3ꢀ
ꢀ 4ꢀ
ꢀ 5ꢀ
ꢀ 6ꢀ
ꢀ 7ꢀ
ꢀ 8ꢀ
ꢀ 9ꢀ
ꢀ10ꢀ
ꢀ11ꢀ
ꢀ12ꢀ
ꢀ13ꢀ
Aꢀ
Aꢀ
2Rꢀ
2Tꢀ
3Tꢀ
5Tꢀ
6Rꢀ
3Bꢀ
5Bꢀ
7Pꢀ
6Nꢀ
6Lꢀ
7Kꢀ
7Tꢀ
6Hꢀ
14ꢀ
15ꢀ
16ꢀ
17ꢀ
18ꢀ
19ꢀ
20ꢀ
21ꢀ
DQaꢀ
DQaꢀ
DQaꢀ
DQaꢀ
Aꢀ
7Gꢀ
6Fꢀ
7Eꢀ
6Dꢀ
6Tꢀ
6Aꢀ
5Aꢀ
4Gꢀ
27ꢀ
28ꢀ
29ꢀ
30ꢀ
31ꢀ
32ꢀ
33ꢀ
34ꢀ
35ꢀ
36ꢀ
37ꢀ
38ꢀ
39ꢀ
CLKꢀ
Aꢀ
4Kꢀ
6Bꢀ
5Lꢀ
3Gꢀ
2Bꢀ
4Eꢀ
3Aꢀ
2Aꢀ
1Dꢀ
2Eꢀ
2Gꢀ
1Hꢀ
5R
40ꢀ
41ꢀ
42ꢀ
43ꢀ
44ꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
Aꢀ
BWaꢀ
BWbꢀ
CE2ꢀ
CEꢀ
2M
1N
2P
Aꢀ
Aꢀ
Aꢀ
Aꢀ
45ꢀ MODEꢀ 3R
Aꢀ
Aꢀ
Aꢀ
46ꢀ
47ꢀ
48ꢀ
49ꢀ
50ꢀ
51ꢀ
Aꢀ
Aꢀ
2C
3C
5C
6C
4N
4P
DQaꢀ
DQaꢀ
DQaꢀ
DQaꢀ
ZZꢀ
DQaꢀ
ADVꢀ
Aꢀ
22ꢀ ADSPꢀ 4Aꢀ
23ꢀ ADSCꢀ 4Bꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
NCꢀ
Aꢀ
Aꢀ
24ꢀ
25ꢀ
26ꢀ
OEꢀ
BWEꢀ 4Mꢀ
GWꢀ 4Hꢀ
4Fꢀ
A1ꢀ
A0ꢀ
Integrated Silicon Solution, Inc.ꢀ
25
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
165 PBGA BOUNDARY SCAN ORDER (x 36)
Signal Bump
Signal Bump
Signal
Name
Bump
ID
Signal Bump
Bit # Name
ID
Bit # Name
ID
Bit #
41ꢀ
42ꢀ
43ꢀ
44ꢀ
45ꢀ
46ꢀ
47ꢀ
48ꢀ
49ꢀ
50ꢀ
51ꢀ
52ꢀ
53ꢀ
54ꢀ
55ꢀ
56ꢀ
57ꢀ
58ꢀ
59ꢀ
60ꢀ
Bit #
61ꢀ
62ꢀ
63ꢀ
64ꢀ
65ꢀ
66ꢀ
67ꢀ
68ꢀ
69ꢀ
70ꢀ
71ꢀ
72ꢀ
73ꢀ
74ꢀ
75ꢀ
ꢀ
Name
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
DQdꢀ
Aꢀ
ID
ꢀ 1ꢀ
ꢀ 2ꢀ
ꢀ 3ꢀ
ꢀ 4ꢀ
ꢀ 5ꢀ
ꢀ 6ꢀ
ꢀ 7ꢀ
ꢀ 8ꢀ
ꢀ 9ꢀ
ꢀ10ꢀ
ꢀ11ꢀ
ꢀ12ꢀ
ꢀ13ꢀ
ꢀ14ꢀ
ꢀ15ꢀ
ꢀ16ꢀ
ꢀ17ꢀ
ꢀ18ꢀ
ꢀ19ꢀ
ꢀ20ꢀ
MODEꢀ 1Rꢀ
21ꢀ
22ꢀ
23ꢀ
24ꢀ
25ꢀ
26ꢀ
27ꢀ
28ꢀ
29ꢀ
30ꢀ
31ꢀ
32ꢀ
33ꢀ
34ꢀ
35ꢀ
36ꢀ
37ꢀ
38ꢀ
39ꢀ
40ꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
NCꢀ
11Gꢀ
11Fꢀ
11Eꢀ
11Dꢀ
10Gꢀ
10Fꢀ
10Eꢀ
10Dꢀ
11Cꢀ
11Aꢀ
10Aꢀ
10Bꢀ
9Aꢀ
NCꢀ
CE2ꢀ
BWaꢀ
BWbꢀ
BWcꢀ
BWdꢀ
CE2ꢀ
CEꢀ
1Aꢀ
6Aꢀ
5Bꢀ
5Aꢀ
4Aꢀ
4Bꢀ
3Bꢀ
3Aꢀ
2Aꢀ
2Bꢀ
1Bꢀ
1Cꢀ
1Dꢀ
1Eꢀ
1Fꢀ
1Gꢀ
2D
1J
NCꢀ
Aꢀ
6Nꢀ
11Pꢀ
8Pꢀ
1K
1L
1M
2J
Aꢀ
Aꢀ
8Rꢀ
Aꢀ
9Rꢀ
2K
2L
2M
1N
3P
3R
4R
4P
6P
6R
Aꢀ
9Pꢀ
Aꢀ
10Pꢀ
10Rꢀ
11Rꢀ
11Hꢀ
Aꢀ
Aꢀ
Aꢀ
Aꢀ
ZZꢀ
Aꢀ
NCꢀ
Aꢀ
DQaꢀ 11Nꢀ
DQaꢀ 11Mꢀ
DQaꢀ 11Lꢀ
DQaꢀ 11Kꢀ
DQaꢀ 11Jꢀ
DQaꢀ 10Mꢀ
DQaꢀ 10Lꢀ
DQaꢀ 10Kꢀ
DQaꢀ 10Jꢀ
Aꢀ
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
DQcꢀ
Aꢀ
ADVꢀ
ADSPꢀ
ADSCꢀ
OEꢀ
Aꢀ
9Bꢀ
A1ꢀ
8Aꢀ
A0ꢀ
8Bꢀ
BWEꢀ
GWꢀ
CLKꢀ
NCꢀ
7Aꢀ
7Bꢀ
2E
6Bꢀ
2F
11Bꢀ
2G
26
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
165 PBGA BOUNDARY SCAN ORDER (x 18)
Signal Bump
Signal Bump
Signal
Name
Bump
ID
Signal Bump
Bit # Name
ID
Bit # Name
ID
Bit #
41ꢀ
42ꢀ
43ꢀ
44ꢀ
45ꢀ
46ꢀ
47ꢀ
48ꢀ
49ꢀ
50ꢀ
51ꢀ
52ꢀ
53ꢀ
54ꢀ
55ꢀ
56ꢀ
57ꢀ
58ꢀ
59ꢀ
60ꢀ
Bit #
61ꢀ
62ꢀ
63ꢀ
64ꢀ
65ꢀ
66ꢀ
67ꢀ
68ꢀ
69ꢀ
70ꢀ
71ꢀ
72ꢀ
73ꢀ
74ꢀ
75ꢀ
ꢀ
Name
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
NCꢀ
NCꢀ
NCꢀ
NCꢀ
Aꢀ
ID
ꢀ 1ꢀ
ꢀ 2ꢀ
ꢀ 3ꢀ
ꢀ 4ꢀ
ꢀ 5ꢀ
ꢀ 6ꢀ
ꢀ 7ꢀ
ꢀ 8ꢀ
ꢀ 9ꢀ
ꢀ10ꢀ
ꢀ11ꢀ
ꢀ12ꢀ
ꢀ13ꢀ
ꢀ14ꢀ
ꢀ15ꢀ
ꢀ16ꢀ
ꢀ17ꢀ
ꢀ18ꢀ
ꢀ19ꢀ
ꢀ20ꢀ
MODEꢀ 1Rꢀ
21ꢀ
22ꢀ
23ꢀ
24ꢀ
25ꢀ
26ꢀ
27ꢀ
28ꢀ
29ꢀ
30ꢀ
31ꢀ
32ꢀ
33ꢀ
34ꢀ
35ꢀ
36ꢀ
37ꢀ
38ꢀ
39ꢀ
40ꢀ
DQaꢀ
DQaꢀ
DQaꢀ
DQaꢀ
DQaꢀ
NCꢀ
11Gꢀ
11Fꢀ
11Eꢀ
11Dꢀ
11Cꢀ
10Fꢀ
10Eꢀ
10Dꢀ
10Gꢀ
11Aꢀ
10Aꢀ
10Bꢀ
9Aꢀ
NCꢀ
CE2ꢀ
BWaꢀ
NCꢀ
1Aꢀ
6Aꢀ
5Bꢀ
5Aꢀ
4Aꢀ
4Bꢀ
3Bꢀ
3Aꢀ
2Aꢀ
2Bꢀ
1Bꢀ
1Cꢀ
1Dꢀ
1Eꢀ
1Fꢀ
1Gꢀ
2D
1J
NCꢀ
Aꢀ
6Nꢀ
11Pꢀ
8Pꢀ
1K
1L
1M
1N
2K
2L
2M
2J
Aꢀ
Aꢀ
8Rꢀ
BWbꢀ
NCꢀ
Aꢀ
9Rꢀ
Aꢀ
9Pꢀ
NCꢀ
CE2ꢀ
CEꢀ
Aꢀ
10Pꢀ
10Rꢀ
11Rꢀ
11Hꢀ
11Nꢀ
11Mꢀ
11Lꢀ
11Kꢀ
11Jꢀ
NCꢀ
Aꢀ
NCꢀ
Aꢀ
Aꢀ
Aꢀ
Aꢀ
3P
3R
4R
4P
6P
6R
ZZꢀ
NCꢀ
NCꢀ
NCꢀ
NCꢀ
NCꢀ
Aꢀ
NCꢀ
Aꢀ
Aꢀ
NCꢀ
Aꢀ
ADVꢀ
ADSPꢀ
ADSCꢀ
OEꢀ
NCꢀ
Aꢀ
9Bꢀ
NCꢀ
A1ꢀ
8Aꢀ
NCꢀ
A0ꢀ
8Bꢀ
NCꢀ
DQaꢀ 10Mꢀ
DQaꢀ 10Lꢀ
DQaꢀ 10Kꢀ
DQaꢀ 10Jꢀ
BWEꢀ
GWꢀ
CLKꢀ
NCꢀ
7Aꢀ
DQbꢀ
DQbꢀ
DQbꢀ
DQbꢀ
7Bꢀ
2E
6Bꢀ
2F
11Bꢀ
2G
Integrated Silicon Solution, Inc.
27
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
ORDERING INFORMATION (VD D = 3.3V/VD D q = 2.5V/3.3V)
Commercial Range: 0°C to +70°C
Configuration
Access Time
Order Part Number
Package(1)
256Kx36ꢀ
6.5ꢀ
ꢀ
IS61LF25636A-6.5TQꢀ
IS61LF25636A-6.5B2ꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ ꢀ
256Kx36ꢀ
ꢀ
IS61LF25636A-6.5B3ꢀ
165ꢀPBGA
7.5ꢀ
ꢀ
IS61LF25636A-7.5TQꢀ
IS61LF25636A-7.5B2ꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ ꢀ
ꢀ
IS61LF25636A-7.5B3ꢀ
165ꢀPBGA
512Kx18ꢀ
ꢀ ꢀ
ꢀ ꢀ
6.5ꢀ
ꢀ
ꢀ
IS61LF51218A-6.5TQꢀ
IS61LF51218A-6.5TQLꢀ
IS61LF51218A-6.5B2ꢀ
100ꢀTQFP,ꢀ3CEꢀ
100ꢀTQFP,ꢀ3CE,ꢀLead-free
119ꢀPBGA
ꢀ
ꢀ
ꢀ ꢀ
ꢀ
IS61LF51218A-6.5B3ꢀ
165ꢀPBGA
512Kx18ꢀ
ꢀ ꢀ
7.5ꢀ
ꢀ
IS61LF51218A-7.5TQꢀ
IS61LF51218A-7.5B2ꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ
IS61LF51218A-7.5B3ꢀ
165ꢀPBGA
Industrial Range: -40°C to +85°C
Configuration
Access Time
Order Part Number
Package(1)
256Kx36ꢀ
6.5ꢀ
ꢀ
IS61LF25636A-6.5TQIꢀ
IS61LF25636A-6.5B2Iꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ ꢀ
256Kx36ꢀ
ꢀ ꢀ
ꢀ ꢀ
ꢀ
IS61LF25636A-6.5B3Iꢀ
165ꢀPBGA
7.5ꢀ
ꢀ
ꢀ
IS61LF25636A-7.5TQIꢀ
IS61LF25636A-7.5TQLIꢀ
IS61LF25636A-7.5B2Iꢀ
100ꢀTQFP,ꢀ3CEꢀ
100ꢀTQFP,ꢀ3CE,ꢀLead-free
119ꢀPBGA
ꢀ
ꢀ
ꢀ
ꢀ ꢀ
ꢀ
IS61LF25636A-7.5B3Iꢀ
165ꢀPBGA
512Kx18ꢀ
ꢀ ꢀ
6.5ꢀ
ꢀ
IS61LF51218A-6.5TQIꢀ
IS61LF51218A-6.5B2Iꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ
IS61LF51218A-6.5B3Iꢀ
165ꢀPBGA
512Kx18ꢀ
ꢀ ꢀ
ꢀ ꢀ
7.5ꢀ
ꢀ
ꢀ
IS61LF51218A-7.5TQIꢀ
IS61LF51218A-7.5TQLIꢀ
IS61LF51218A-7.5B2Iꢀ
100ꢀTQFP,ꢀ3CEꢀ
100ꢀTQFP,ꢀ3CE,ꢀLead-free
119ꢀPBGA
ꢀ
ꢀ ꢀ
ꢀ
IS61LF51218A-7.5B3Iꢀ
165ꢀPBGA
Note:
1.ꢀꢀForꢀ100ꢀTQFP,ꢀ2CEꢀoptionꢀcontactꢀSRAMꢀMarketingꢀatꢀsram@issi.com
Automotive Range: -40°C to +125°C
Configuration
Access Time
Order Part Number
Package(1)
256Kx36ꢀ
ꢀ ꢀ
7.5ꢀ
ꢀ
IS64LF25636A-7.5TQLA3ꢀ
IS64LF25636A-7.5BLA3ꢀ
100ꢀTQFP,ꢀ3CE,ꢀLead-freeꢀ
165ꢀPBGA,ꢀLead-free
ꢀ
28
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
ORDERING INFORMATION (VD D = 2.5V /VD D q = 2.5V)
Commercial Range: 0°C to +70°C
Configuration
Access Time
Order Part Number
Package(1)
256Kx36ꢀ
6.5ꢀ
ꢀ
IS61VF25636A-6.5TQꢀ
IS61VF25636A-6.5B2ꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ ꢀ
256Kx36ꢀ
ꢀ
IS61VF25636A-6.5B3ꢀ
165ꢀPBGA
7.5ꢀ
ꢀ
IS61VF25636A-7.5TQꢀ
IS61VF25636A-7.5B2ꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ ꢀ
ꢀ
IS61VF25636A-7.5B3ꢀ
165ꢀPBGA
512Kx18ꢀ
ꢀ ꢀ
6.5ꢀ
ꢀ
IS61VF51218A-6.5TQꢀ
IS61VF51218A-6.5B2ꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ
IS61VF51218A-6.5B3ꢀ
165ꢀPBGA
512Kx18ꢀ
ꢀ ꢀ
7.5ꢀ
ꢀ
IS61VF51218A-7.5TQꢀ
IS61VF51218A-7.5B2ꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ
IS61VF51218A-7.5B3ꢀ
165ꢀPBGA
Industrial Range: -40°C to +85°C
Configuration
Access Time
Order Part Number
Package(1)
256Kx36ꢀ
6.5ꢀ
ꢀ
IS61VF25636A-6.5TQIꢀ
IS61VF25636A-6.5B2Iꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ ꢀ
256Kx36ꢀ
ꢀ
IS61VF25636A-6.5B3Iꢀ
165ꢀPBGA
7.5ꢀ
ꢀ
IS61VF25636A-7.5TQIꢀ
IS61VF25636A-7.5B2Iꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ ꢀ
ꢀ
IS61VF25636A-7.5B3Iꢀ
165ꢀPBGA
512Kx18ꢀ
ꢀ ꢀ
6.5ꢀ
ꢀ
IS61VF51218A-6.5TQIꢀ
IS61VF51218A-6.5B2Iꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ
IS61VF51218A-6.5B3Iꢀ
165ꢀPBGA
512Kx18ꢀ
ꢀ ꢀ
7.5ꢀ
ꢀ
IS61VF51218A-7.5TQIꢀ
IS61VF51218A-7.5B2Iꢀ
100ꢀTQFP,ꢀ3CE
119ꢀPBGA
ꢀ ꢀ
ꢀ
IS61VF51218A-7.5B3Iꢀ
165ꢀPBGA
Note:
1.ꢀꢀForꢀ100ꢀTQFP,ꢀ2CEꢀoptionꢀcontactꢀSRAMꢀMarketingꢀatꢀsram@issi.com
Integrated Silicon Solution, Inc.
29
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
30
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
Integrated Silicon Solution, Inc.ꢀ
31
Rev. F
07/22/09
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
32
Integrated Silicon Solution, Inc.
Rev. F
07/22/09
相关型号:
IS61LF51218B-7.5TQLI
Cache SRAM, 512KX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, LQFP-100
ISSI
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