IS62C25616BL-45TI [ISSI]
32KX8 STANDARD SRAM, 45ns, PDSO44, 0.400 INCH, TSOP2-44;
| 型号： | IS62C25616BL-45TI |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | 32KX8 STANDARD SRAM, 45ns, PDSO44, 0.400 INCH, TSOP2-44 静态存储器 光电二极管 内存集成电路 |
| 文件： | 总13页 (文件大小：415K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
performanceꢀCMOSꢀtechnology.Thisꢀhighlyꢀreliableꢀprocessꢀ
coupledꢀwithꢀinnovativeꢀcircuitꢀdesignꢀtechniques,ꢀyieldsꢀ
accessꢀtimesꢀasꢀfastꢀasꢀ12ꢀnsꢀwithꢀlowꢀpowerꢀconsumption.
IS62C25616BL, IS65C25616BL
256Kꢀxꢀ16ꢀHIGH-SPEEDꢀCMOSꢀSTATICꢀRAM
MARCHꢀ2013
FEATURES
•ꢀ High-speedꢀaccessꢀtime:ꢀ45ꢀns
•ꢀ LowꢀActiveꢀPower:ꢀ50ꢀmWꢀ(typical)
DESCRIPTION
Theꢀ ISSIꢀ IS62C25616BLꢀ andꢀ IS65C25616BLꢀ areꢀ high-
speed,ꢀ4,194,304-bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ262,144ꢀ
wordsꢀbyꢀ16ꢀbits.ꢀTheyꢀareꢀfabricatedꢀusingꢀISSI'sꢀhigh-
•ꢀ LowꢀStandbyꢀPower:ꢀ10ꢀmWꢀ(typical)ꢀꢀ
ꢀ
CMOSꢀstandby
•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels
•ꢀ Singleꢀ5Vꢀ ꢀ10%ꢀpowerꢀsupply
Whenꢀ CEꢀ isꢀ HIGHꢀ (deselected),ꢀ theꢀ deviceꢀ assumesꢀ aꢀ
standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀreducedꢀ
downꢀwithꢀCMOSꢀinputꢀlevels.
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ
required
•ꢀ Package:ꢀ44-pinꢀTSOPꢀ(TypeꢀII)
EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ
andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ
WriteꢀEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ
memory.ꢀAꢀdataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀ
Byteꢀ(LB)ꢀaccess.
•ꢀ Commercial,ꢀIndustrialꢀandꢀAutomotiveꢀtemper-
atureꢀrangesꢀavailable
•ꢀ Lead-freeꢀavailable
TheꢀIS62C25616BLꢀandꢀIS65C25616BLꢀareꢀpackagedꢀinꢀ
theꢀJEDECꢀstandardꢀ44-pinꢀTSOPꢀ(TypeꢀII).
FUNCTIONAL BLOCK DIAGRAM
256K x 16
MEMORY ARRAY
A0-A17
DECODER
VDD
GND
I/O0-I/O7
Lower Byte
I/O
DATA
COLUMN I/O
CIRCUIT
I/O8-I/O15
Upper Byte
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
Copyrightꢀ©ꢀ2013ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ
notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-
estꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀ
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-
ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ
unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
1
Rev.ꢀ B
03/15/2013
IS62C25616BL, IS65C25616BLꢀ
PIN CONFIGURATIONS*
44-PinꢀTSOPꢀ(TypeꢀII)
A4
A3
A2
A1
A0
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
2
3
4
5
CE
6
I/O0
I/O1
I/O2
I/O3
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
A17
*PleaseꢀcontactꢀISSIꢀatꢀSRAM@issi.comꢀforꢀavailabilityꢀofꢀ48-pinꢀBGAꢀandꢀ44-pinꢀSOJꢀpackages.
PINꢀDESCRIPTIONS
LBꢀ
Lower-byteꢀControlꢀ(I/O0-I/O7)
Upper-byteꢀControlꢀ(I/O8-I/O15)
NoꢀConnection
A0-A17ꢀ ꢀ
AddressꢀInputs
UBꢀ
I/O0-I/O15ꢀ
DataꢀInputs/Outputs
ChipꢀEnableꢀInput
OutputꢀEnableꢀInput
WriteꢀEnableꢀInput
NCꢀ
Vddꢀ
GNDꢀ
CEꢀꢀ
OEꢀꢀ
WEꢀꢀ
ꢀ
ꢀ
ꢀ
Power
Ground
2ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774ꢀ
Rev.ꢀ B
03/15/2013
IS62C25616BL, IS65C25616BLꢀ
TRUTHꢀTABLE
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
I/OꢀPIN
Modeꢀ
WEꢀ
Xꢀ
CEꢀ
Hꢀ
OEꢀ
Xꢀ
LBꢀ
Xꢀ
UBꢀ
Xꢀ
I/O0-I/O7ꢀ I/O8-I/O15ꢀ VDDꢀCurrentꢀ
NotꢀSelectedꢀ
High-Zꢀ
High-Zꢀ
Isb1, Isb2
OutputꢀDisabledꢀ
ꢀ
Hꢀ
Xꢀ
Lꢀ
Lꢀ
Hꢀ
Xꢀ
Xꢀ
Hꢀ
Xꢀ
Hꢀ
High-Zꢀ
High-Zꢀ
High-Zꢀ
High-Z
Icc1, Icc2ꢀ
ꢀ
ꢀ
ꢀ
Readꢀ
ꢀ
Hꢀ
Hꢀ
H
Lꢀ
Lꢀ
L
Lꢀ
Lꢀ
L
Lꢀ
Lꢀ
L
Lꢀ
Lꢀ
L
Xꢀ
Xꢀ
X
Lꢀ
Hꢀ
L
Lꢀ
Hꢀ
L
Hꢀ
Lꢀ
L
Hꢀ
Lꢀ
L
doutꢀ
High-Zꢀ
dout
High-Z
dout
dout
Icc1, Icc2ꢀ
Icc1, Icc2ꢀ
ꢀ
ꢀ
Writeꢀ
ꢀ
dInꢀ
High-Zꢀ
dIn
High-Z
dIn
dIn
ABSOLUTEꢀMAXIMUMꢀRATINGS(1)
ꢀ
Symbolꢀ Parameterꢀ
Valueꢀ
–0.5ꢀtoꢀ+7.0ꢀ
–65ꢀtoꢀ+150ꢀ
1.5ꢀ
Unit
V
°C
ꢀ Vterm
ꢀ tstg
ꢀ Pt
TerminalꢀVoltageꢀwithꢀRespectꢀtoꢀGNDꢀ
StorageꢀTemperatureꢀ
PowerꢀDissipationꢀ
W
ꢀ Ioutꢀ
DCꢀOutputꢀCurrentꢀ(LOW)ꢀ
20ꢀ
mAꢀ
Notes:
1.ꢀꢀStressꢀgreaterꢀthanꢀthoseꢀlistedꢀunderꢀABSOLUTEꢀMAXIMUMꢀRATINGSꢀmayꢀcauseꢀpermanentꢀdamageꢀtoꢀtheꢀ
device.ꢀThisꢀisꢀaꢀstressꢀratingꢀonlyꢀandꢀfunctionalꢀoperationꢀofꢀtheꢀdeviceꢀatꢀtheseꢀorꢀanyꢀotherꢀconditionsꢀaboveꢀ
thoseꢀindicatedꢀinꢀtheꢀoperationalꢀsectionsꢀofꢀthisꢀspecificationꢀisꢀnotꢀimplied.ꢀExposureꢀtoꢀabsoluteꢀmaximumꢀratingꢀ
conditionsꢀforꢀextendedꢀperiodsꢀmayꢀaffectꢀreliability.ꢀ
CAPACITANCE(1,2)
ꢀ
Symbolꢀ
Parameterꢀ
Conditionsꢀ
VIn = 0V
Max.ꢀ
6ꢀ
Unit
pF
ꢀ cIn
InputꢀCapacitanceꢀ
OutputꢀCapacitanceꢀ
ꢀ coutꢀ
Vout = 0V
8ꢀ
pF
Notes:
1.ꢀꢀTestedꢀinitiallyꢀandꢀafterꢀanyꢀdesignꢀorꢀprocessꢀchangesꢀthatꢀmayꢀaffectꢀtheseꢀparameters.
2.ꢀ Testꢀconditions:ꢀTa = 25°c, fꢀ=ꢀ1ꢀMHz,ꢀVddꢀ=ꢀ5.0V.
DCꢀELECTRICALꢀCHARACTERISTICSꢀ(OverꢀOperatingꢀRange)
ꢀ
Symbolꢀ Parameterꢀ
TestꢀConditionsꢀ
ꢀ
Min.ꢀ
2.4ꢀ
—ꢀ
Max.ꢀ
—ꢀ
Unit
V
ꢀ VoH
ꢀ VoL
ꢀ VIH
ꢀ VIL
ꢀ ILI
OutputꢀHIGHꢀVoltageꢀ
OutputꢀLOWꢀVoltageꢀ
InputꢀHIGHꢀVoltage(1)ꢀ
InputꢀLOWꢀVoltage(1)ꢀ
Vdd = Min.,ꢀIoH = –1.0ꢀmAꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Vdd = Min.,ꢀIoL = 2.1ꢀmAꢀ
0.4ꢀ
V
ꢀ
ꢀ
2.2ꢀ
–0.3ꢀ
Vdd + 0.5
0.8ꢀ
V
V
ꢀ
InputꢀLeakageꢀ
GNDꢀ≤ꢀVIn ≤ Vdd
Com.ꢀ
Ind.ꢀ
Auto.ꢀ
–1ꢀ
–2ꢀ
–5ꢀ
1ꢀ
2ꢀ
5ꢀ
µAꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ ILo
OutputꢀLeakageꢀ
ꢀ
ꢀ
GNDꢀ≤ꢀVout ≤ Vddꢀ
OutputsꢀDisabledꢀ
ꢀ
Com.ꢀ
Ind.ꢀ
Auto.ꢀ
–1ꢀ
–2ꢀ
–5ꢀ
1ꢀ
2ꢀ
5
µAꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Note:
1.ꢀꢀVILL (min) = -2.0VꢀACꢀ(pulseꢀwidthꢀ<10ꢀns).ꢀNotꢀ100%ꢀtested.ꢀ
ꢀ
VIHH (max) = Vdd + 2.0VꢀACꢀ(pulseꢀwidthꢀ<10ꢀns).ꢀNotꢀ100%ꢀtested.ꢀ
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
3
Rev.ꢀ B
03/15/2013
IS62C25616BL, IS65C25616BLꢀ
OPERATINGꢀRANGE
ꢀ
ꢀ
ꢀ
ꢀ
Rangeꢀ
Commercialꢀ 0°Cꢀtoꢀ+70°Cꢀ
Industrialꢀ -40°Cꢀtoꢀ+85°Cꢀ
Automotiveꢀ -40°Cꢀtoꢀ+125°Cꢀ
AmbientꢀTemperatureꢀ
VDD
Speedꢀ(ns)
5Vꢀ ꢀ10%ꢀ
5Vꢀ ꢀ10%ꢀ
5Vꢀ ꢀ10%ꢀ
45
45
45
POWERꢀSUPPLYꢀCHARACTERISTICS(1)ꢀ(OverꢀOperatingꢀRange)
ꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ-45ꢀnsꢀ
Min.ꢀ Max.ꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢀ SymbolꢀParameterꢀ
TestꢀConditionsꢀ
CEꢀ=ꢀVIL
dd = Max.,
I out= 0 mA,ꢀfꢀ=ꢀ0
ꢀ
ꢀ
Unit
ꢀ Icc
Averageꢀoperatingꢀ
Currentꢀ
ꢀ
,
Com.
Ind.ꢀ
Auto.ꢀ
—ꢀ
—ꢀ
—ꢀ
10
10ꢀ
10ꢀ
ꢀ
mA
V
ꢀ ꢀ
ꢀ
ꢀ
ꢀ
I
cc
1
V
ddꢀDynamicꢀOperatingꢀꢀVdd = Max.,ꢀCEꢀ=ꢀVIL
Com.
Ind.ꢀ
—ꢀ
—ꢀ
—ꢀ
15
20ꢀ
25ꢀ
mA
SupplyꢀCurrentꢀ
ꢀ
ꢀ
I
out = 0 mA,ꢀꢀfꢀ=ꢀfmaX
ꢀ ꢀ
ꢀ ꢀ
VIn = VIH orꢀVIL
Auto.ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
typ.(2)ꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ10ꢀ
ꢀ Isb
1
TTLꢀStandbyꢀCurrentꢀ
(TTLꢀInputs)ꢀ
ꢀꢀ
Vdd = Max.,ꢀ
Com.
Ind.ꢀ
Auto.ꢀ
—
—ꢀ
—ꢀ
1
1.5
2ꢀ
mA
VIn = VIH orꢀVIL, CEꢀ≥ꢀVIH
,
ꢀ ꢀ
fꢀ=ꢀ0ꢀ
ꢀ Isb2ꢀ
ꢀ ꢀ
ꢀ ꢀ
CMOSꢀStandbyꢀ
Vdd = Max.,ꢀ
Com.
Ind.ꢀ
—
—ꢀ
—ꢀ
10ꢀ
15
35ꢀ
mA
Currentꢀ(CMOSꢀInputs)ꢀ CEꢀ≥ ꢀVdd – 0.2V,ꢀ
In ≥ Vdd – 0.2V,ꢀ
orꢀVIn ≤ Vss + 0.2V, ꢀfꢀ=ꢀ0
V
Auto.ꢀ
typ.(2)ꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ4
ꢀ
Note:
1.ꢀꢀAtꢀfꢀ=ꢀfmaX,ꢀaddressꢀandꢀdataꢀinputsꢀareꢀcyclingꢀatꢀtheꢀmaximumꢀfrequency,ꢀfꢀ=ꢀ0ꢀmeansꢀnoꢀinputꢀlinesꢀchange.
2.ꢀꢀTypicalꢀvaluesꢀareꢀmeasuredꢀatꢀVdd =ꢀ5V,ꢀTaꢀ=ꢀ25oCꢀandꢀnotꢀ100%ꢀtested.
4ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774ꢀ
Rev.ꢀ B
03/15/2013
IS62C25616BL, IS65C25616BLꢀ
READꢀCYCLEꢀSWITCHINGꢀCHARACTERISTICS(1)ꢀ(OverꢀOperatingꢀRange)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
-45ꢀ
Min.ꢀ Max.ꢀ
45ꢀ
—ꢀ
3ꢀ
Symbolꢀ
ꢀ trcꢀ
ꢀ taaꢀ
ꢀ toHaꢀ
ꢀ taceꢀ
ꢀ tdoeꢀ
ꢀ tHzoe(2)ꢀ
ꢀ tLzoe(2)ꢀ
ꢀ tHzce(2)ꢀ
ꢀ tLzce(2)ꢀ
ꢀ tbaꢀ
Parameterꢀ
ReadꢀCycleꢀTimeꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
—ꢀ
45ꢀ
—ꢀ
45ꢀ
20ꢀ
15ꢀ
—ꢀ
15ꢀ
—ꢀ
45ꢀ
15ꢀ
—ꢀ
AddressꢀAccessꢀTimeꢀ
OutputꢀHoldꢀTimeꢀ
CEꢀAccessꢀTimeꢀ
—ꢀ
—ꢀ
0ꢀ
OEꢀAccessꢀTimeꢀ
OEꢀtoꢀHigh-ZꢀOutputꢀ
OEꢀtoꢀLow-ZꢀOutputꢀ
CEꢀtoꢀHigh-ZꢀOutputꢀ
CEꢀtoꢀLow-ZꢀOutputꢀ
LB,ꢀUBꢀAccessꢀTimeꢀ
LB,ꢀUBꢀtoꢀHigh-ZꢀOutputꢀ
LB,ꢀUBꢀtoꢀLow-ZꢀOutputꢀ
5ꢀ
0ꢀ
5ꢀ
—ꢀ
0ꢀ
ꢀ tHzbꢀ
ꢀ tLzbꢀ
0ꢀ
Notes:ꢀ
1.ꢀ Testꢀconditionsꢀassumeꢀsignalꢀtransitionꢀtimesꢀofꢀ3ꢀnsꢀorꢀless,ꢀtimingꢀreferenceꢀlevelsꢀofꢀ1.5V,ꢀinputꢀpulseꢀlevelsꢀofꢀ0ꢀtoꢀ
3.0VꢀandꢀoutputꢀloadingꢀspecifiedꢀinꢀFigureꢀ1.
2.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀꢀTransitionꢀisꢀmeasuredꢀ 500ꢀmVꢀfromꢀsteady-stateꢀvoltage.ꢀNotꢀ100%ꢀtested.
3.ꢀ Notꢀ100%ꢀtested.
ACꢀTESTꢀCONDITIONS
ꢀ
ꢀ
ꢀ
Parameterꢀ
Unit
0Vꢀtoꢀ3.0V
3ꢀns
InputꢀPulseꢀLevelꢀ
InputꢀRiseꢀandꢀFallꢀTimesꢀ
ꢀ
ꢀ
InputꢀandꢀOutputꢀTimingꢀ
andꢀReferenceꢀLevel
1.5Vꢀ
ꢀ
OutputꢀLoadꢀ
SeeꢀFiguresꢀ1ꢀandꢀ2
ACꢀTESTꢀLOADS
1838 Ω
1838 Ω
5V
5V
OUTPUT
OUTPUT
994 Ω
994 Ω
30 pF
Including
jig and
5 pF
Including
jig and
scope
scope
Figureꢀ1
Figureꢀ2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
5
Rev.ꢀ B
03/15/2013
IS62C25616BL, IS65C25616BLꢀ
ACꢀWAVEFORMS
READꢀCYCLEꢀNO.ꢀ1(1,2)ꢀ(AddressꢀControlled)ꢀ(CEꢀ=ꢀOEꢀ=ꢀVIL, UB orꢀLB = VIL)
t
RC
ADDRESS
t
AA
t
OHA
t
OHA
DATA VALID
DOUT
PREVIOUS DATA VALID
READ1.eps
READꢀCYCLEꢀNO.ꢀ2(1,3)ꢀ(CE,ꢀꢀOEꢀandꢀUB/LBꢀControlled)
t
RC
ADDRESS
OE
t
AA
t
OHA
t
HZOE
t
DOE
t
t
LZOE
ACE
CE
t
HZCE
t
LZCE
LB, UB
t
BA
t
HZB
t
LZB
HIGH-Z
DOUT
DATA VALID
UB_CEDR2.eps
Notes:ꢀ
1.ꢀ WEꢀisꢀHIGHꢀforꢀaꢀReadꢀCycle.
2.ꢀ Theꢀdeviceꢀisꢀcontinuouslyꢀselected.ꢀOE,ꢀCE,ꢀUB,ꢀorꢀLBꢀ=ꢀVIL.
3.ꢀ AddressꢀisꢀvalidꢀpriorꢀtoꢀorꢀcoincidentꢀwithꢀCEꢀLOWꢀtransition.
6ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774ꢀ
Rev.ꢀ B
03/15/2013
ꢀ ꢀ tHdꢀ
IS62C25616BL, IS65C25616BLꢀ
WRITEꢀCYCLEꢀSWITCHINGꢀCHARACTERISTICS(1,3)ꢀ(OverꢀOperatingꢀRange)
ꢀ
-45ꢀ
ꢀ Symbolꢀ Parameterꢀ
Min.ꢀ Max.ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Unit
ns
ꢀ ꢀ twcꢀ
ꢀ ꢀ tsce
WriteꢀCycleꢀTimeꢀ
45ꢀ
35ꢀ
35ꢀ
—ꢀ
—ꢀ
—ꢀ
CEꢀtoꢀWriteꢀEndꢀ
ns
ꢀ ꢀ tawꢀ
ꢀ ꢀ ꢀ
AddressꢀSetupꢀTimeꢀꢀ
toꢀWriteꢀEnd
ns
ꢀ ꢀ tHaꢀ
AddressꢀHoldꢀfromꢀWriteꢀEndꢀ
AddressꢀSetupꢀTimeꢀ
0ꢀ
0ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
—ꢀ
20ꢀ
—ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ꢀ ꢀ tsaꢀ
ꢀ ꢀ tPwbꢀ
ꢀ ꢀ tPwe1ꢀ
ꢀ ꢀ tPwe2ꢀ
ꢀ ꢀ tsdꢀ
LB,ꢀUBꢀValidꢀtoꢀEndꢀofꢀWriteꢀ
WEꢀPulseꢀWidthꢀ(OEꢀ=High)ꢀ
WEꢀPulseꢀWidthꢀ(OE=Low)ꢀ
DataꢀSetupꢀtoꢀWriteꢀEndꢀ
DataꢀHoldꢀfromꢀWriteꢀEndꢀ
35ꢀ
35ꢀ
35ꢀ
25ꢀ
0ꢀ
ꢀ ꢀ tHzwe(2)ꢀ WEꢀLOWꢀtoꢀHigh-ZꢀOutputꢀ
ꢀ ꢀ tLzwe(2)ꢀ WEꢀHIGHꢀtoꢀLow-ZꢀOutputꢀ
Notes:ꢀ
—ꢀ
5ꢀ
1.ꢀ Testꢀconditionsꢀassumeꢀsignalꢀtransitionꢀtimesꢀofꢀ3ꢀnsꢀorꢀless,ꢀtimingꢀreferenceꢀlevelsꢀofꢀ1.5V,ꢀinputꢀpulseꢀlevelsꢀofꢀ0ꢀtoꢀ3.0Vꢀandꢀ
outputꢀloadingꢀspecifiedꢀinꢀFigureꢀ1.
2.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀꢀTransitionꢀisꢀmeasuredꢀ 500ꢀmVꢀfromꢀsteady-stateꢀvoltage.ꢀNotꢀ100%ꢀtested.
3.ꢀ TheꢀinternalꢀwriteꢀtimeꢀisꢀdefinedꢀbyꢀtheꢀoverlapꢀofꢀCEꢀLOWꢀandꢀUBꢀorꢀLB,ꢀandꢀWEꢀLOW.ꢀꢀAllꢀsignalsꢀmustꢀbeꢀinꢀvalidꢀstatesꢀtoꢀ
initiateꢀaꢀWrite,ꢀbutꢀanyꢀoneꢀcanꢀgoꢀinactiveꢀtoꢀterminateꢀtheꢀWrite.ꢀꢀTheꢀDataꢀInputꢀSetupꢀandꢀHoldꢀtimingꢀareꢀreferencedꢀtoꢀtheꢀ
risingꢀorꢀfallingꢀedgeꢀofꢀtheꢀsignalꢀthatꢀterminatesꢀtheꢀwrite.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
7
Rev.ꢀ B
03/15/2013
IS62C25616BL, IS65C25616BLꢀ
ACꢀWAVEFORMS
WRITEꢀCYCLEꢀNO.ꢀ1ꢀ(WEꢀControlled)(1,2)
t
WC
VALID ADDRESS
SCE
ADDRESS
t
SA
t
t
HA
CE
t
AW
t
tPPWWEE21
WE
t
PBW
UB, LB
t
HZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
DOUT
t
SD
t
HD
DATAIN VALID
DIN
UB_CEWR1.eps
Notes:ꢀ
1.ꢀ WRITEꢀisꢀanꢀinternallyꢀgeneratedꢀsignalꢀassertedꢀduringꢀanꢀoverlapꢀofꢀtheꢀLOWꢀstatesꢀonꢀtheꢀCEꢀandꢀWEꢀinputsꢀandꢀatꢀleastꢀ
oneꢀofꢀtheꢀLBꢀandꢀUBꢀinputsꢀbeingꢀinꢀtheꢀLOWꢀstate.
2.ꢀ WRITEꢀ=ꢀ(CE)ꢀ[ꢀ(LB)ꢀ=ꢀ(UB)ꢀ]ꢀ(WE).
8ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774ꢀ
Rev.ꢀ B
03/15/2013
IS62C25616BL, IS65C25616BLꢀ
WRITEꢀCYCLEꢀNO.ꢀ2ꢀ(OE isꢀHIGHꢀDuringꢀWriteꢀCycle)ꢀ(1,2)
t
WC
ADDRESS
VALID ADDRESS
t
HA
OE
LOW
CE
t
AW
t
PWE1
WE
t
SA
t
PBW
UB, LB
t
HZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
DOUT
t
SD
t
HD
DATAIN VALID
DIN
UB_CEWR2.eps
WRITEꢀCYCLEꢀNO.ꢀ3ꢀ(OE isꢀLOWꢀDuringꢀWriteꢀCycle)ꢀ(1)
t
WC
ADDRESS
VALID ADDRESS
t
HA
LOW
LOW
OE
CE
t
t
AW
t
PWE2
WE
t
SA
t
PBW
UB, LB
HZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
DOUT
t
SD
t
HD
DATAIN VALID
DIN
UB_CEWR3.eps
Notes:ꢀ
1.ꢀ TheꢀinternalꢀwriteꢀtimeꢀisꢀdefinedꢀbyꢀtheꢀoverlapꢀofꢀCEꢀLOWꢀandꢀWEꢀLOW.ꢀꢀAllꢀsignalsꢀmustꢀbeꢀinꢀvalidꢀstatesꢀtoꢀinitiateꢀaꢀWrite,ꢀ
butꢀanyꢀoneꢀcanꢀgoꢀinactiveꢀtoꢀterminateꢀtheꢀWrite.ꢀꢀTheꢀDataꢀInputꢀSetupꢀandꢀHoldꢀtimingꢀareꢀreferencedꢀtoꢀtheꢀrisingꢀorꢀfallingꢀ
edgeꢀofꢀtheꢀsignalꢀthatꢀterminatesꢀtheꢀWrite.
2.ꢀ I/OꢀwillꢀassumeꢀtheꢀHigh-ZꢀstateꢀifꢀOEꢀ≥ꢀVIH.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
9
Rev.ꢀ B
03/15/2013
IS62C25616BL, IS65C25616BLꢀ
WRITEꢀCYCLEꢀNO.ꢀ4ꢀ(UB/LB BackꢀtoꢀBackꢀWrite)
t
WC
t
WC
ADDRESS 1
ADDRESS 2
ADDRESS
OE
CE
t
SA
LOW
t
HA
SA
t
HA
t
WE
t
PBW
t
PBW
UB, LB
WORD 1
WORD 2
t
HZWE
t
LZWE
HIGH-Z
DOUT
DATA UNDEFINED
t
HD
t
HD
t
SD
t
SD
DATAIN
VALID
DATAIN
VALID
DIN
UB_CEWR4.eps
10ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774ꢀ
Rev.ꢀ B
03/15/2013
IS62C25616BL, IS65C25616BLꢀ
DATAꢀRETENTIONꢀSWITCHINGꢀCHARACTERISTICS
ꢀ Symbolꢀ Parameterꢀ
TestꢀConditionꢀ
ꢀ
Min.ꢀ
ꢀ
Max.ꢀ Unit
ꢀ ꢀ Vdr ddꢀforꢀDataꢀRetentionꢀ
ꢀ
V
SeeꢀDataꢀRetentionꢀWaveformꢀ
ꢀ
2.0ꢀ
ꢀ
5.5ꢀ
V
ꢀ ꢀ Idr
ꢀ ꢀ ꢀ
ꢀ
DataꢀRetentionꢀCurrentꢀ
ꢀ
V
ddꢀ=ꢀ2.0V,ꢀCEꢀ≥ꢀVddꢀ–ꢀ0.2Vꢀ
Com.ꢀ
Ind.ꢀ
—ꢀ
—ꢀ
ꢀ
ꢀ
10ꢀ
15
mA
VIn ≥ Vdd – 0.2V,ꢀorꢀVIn ≤ Vss + 0.2Vꢀ
ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ
ꢀ
ꢀ
Auto.ꢀ
typ.ꢀ(1)ꢀ
—ꢀ
ꢀ
ꢀ
2
35ꢀ
ꢀ
ꢀ
ꢀ ꢀ tsdr
DataꢀRetentionꢀSetupꢀTimeꢀ SeeꢀDataꢀRetentionꢀWaveformꢀ
RecoveryꢀTimeꢀ SeeꢀDataꢀRetentionꢀWaveformꢀ
ꢀ
ꢀ
0ꢀ
ꢀ
ꢀ
—ꢀ
—ꢀ
ns
ns
ꢀ ꢀ trdr
trcꢀ
Note:ꢀ
ꢀ 1.ꢀTypicalꢀValuesꢀareꢀmeasuredꢀatꢀVddꢀ=ꢀ5V,ꢀT
=ꢀ25oCꢀandꢀnotꢀ100%ꢀtested.
a
DATAꢀRETENTIONꢀWAVEFORMꢀ(CEꢀControlled)
t
Data Retention Mode
t
RDR
SDR
VDD
4.5V
V
DR
CE ≥ VDD - 0.2V
CE
GND
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
11
Rev.ꢀ B
03/15/2013
IS62C25616BL, IS65C25616BLꢀ
ORDERINGꢀINFORMATION:ꢀIS62C25616BL
IndustrialꢀRange:ꢀ–40°Cꢀtoꢀ+85°C
ꢀ Speedꢀ(ns)ꢀ
OrderꢀPartꢀNo.ꢀ
Package
ꢀ
45ꢀ
IS62C25616BL-45TIꢀ
44-pinꢀTSOP-IIꢀ
ꢀ
ꢀ
ꢀ
ꢀ
IS62C25616BL-45TLIꢀ44-pinꢀTSOP-II,ꢀLead-free
AutomotiveꢀRange:ꢀ–40°Cꢀtoꢀ+125°C
ꢀ Speedꢀ(ns)ꢀ
OrderꢀPartꢀNo.ꢀ
Package
ꢀ
45ꢀ
IS65C25616BL-45CTLA3ꢀ 44-pinꢀTSOP-II,ꢀLead-free,ꢀCopperꢀLeadframe
12ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774ꢀ
Rev.ꢀ B
03/15/2013
IS62C25616BL, IS65C25616BLꢀ
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ
13
Rev.ꢀ B
03/15/2013
相关型号：
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