IS62WV1288DBLL-45TLI-TR [ISSI]

IC SRAM 1M PARALLEL 32TSOP;
IS62WV1288DBLL-45TLI-TR
型号: IS62WV1288DBLL-45TLI-TR
厂家: INTEGRATED SILICON SOLUTION, INC    INTEGRATED SILICON SOLUTION, INC
描述:

IC SRAM 1M PARALLEL 32TSOP

静态存储器
文件: 总16页 (文件大小:442K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
128K x 8 LOW VOLTAGE,  
NOVEMBER 2016  
ULTRA LOW POWER CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
TheISSIIS62/65WV1288DALLandIS62/65WV1288DBLLꢀ  
areꢀ ꢀ high-speed,ꢀ 1Mꢀ bitꢀ staticꢀ RAMsꢀ organizedꢀ asꢀ  
128Kꢀwordsꢀbyꢀ8ꢀbits.ꢀItꢀisꢀfabricatedꢀusingꢀISSI's high-  
performanceCMOStechnology.Thishighlyreliableprocessꢀ  
coupled with innovative circuit design techniques, yields  
high-performance and low power consumption devices.  
•ꢀ High-speedꢀaccessꢀtime:ꢀꢀ35ns,ꢀ45ns,ꢀ55ns  
•ꢀ CMOSꢀlowꢀpowerꢀoperation:  
12 mW (typical) operating  
ꢀ ꢀ4ꢀµWꢀ(typical)ꢀCMOSꢀstandby  
•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels  
•ꢀ Singleꢀpowerꢀsupply:ꢀꢀ  
When CS1isHIGH(deselected)orwhenCS2isLOW  
(deselected), the device assumes a standby mode at  
which the power dissipation can be reduced down with  
CMOSꢀinputꢀlevels.  
ꢀ ꢀ1.65V--2.2VꢀVdd (62WV1288dALL)  
ꢀ ꢀ2.3V--3.6VꢀVdd (62WV1288dBLL)  
Easy memory expansion is provided by using Chip Enable  
andꢀOutputꢀEnableꢀinputs.ꢀTheꢀactiveꢀLOWꢀWriteꢀEnableꢀ  
(WE) controls both writing and reading of the memory.  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefresh  
required  
TheIS62/65WV1288DALLandIS62/65WV1288DBLLareꢀ  
packagedꢀinꢀtheꢀJEDECꢀstandardꢀ32-pinꢀTSOPꢀ(TYPEI),ꢀ  
sTSOPꢀ(TYPEI),ꢀSOP,ꢀandꢀ36-pinꢀminiꢀBGA.  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ Industrialꢀandꢀautomotiveꢀtemperatureꢀsupport  
•ꢀ Lead-freeꢀavailableꢀ  
FUNCTIONAL BLOCK DIAGRAM  
128K x 8  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CS2  
CS1  
OE  
CONTROL  
CIRCUIT  
WE  
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-  
est version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-  
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications  
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
PIN CONFIGURATION  
32-pin TSOP (TYPE I) (T),  
32-pin sTSOP (TYPE I) (H)  
36-pin mini BGA (B) (6mm x 8mm)  
1
2
3
4
5
6
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
A11  
A9  
A8  
A13  
WE  
CS2  
A15  
1
A10  
CS1  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
2
3
4
A
B
C
D
E
F
A0  
A1  
A2  
CS2  
WE  
NC  
A3  
A4  
A5  
A6  
A7  
A8  
5
I/O4  
I/O5  
GND  
I/O0  
I/O1  
6
7
VDD  
8
V
DD  
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
9
V
DD  
GND  
I/O2  
I/O3  
A14  
10  
11  
12  
13  
14  
15  
16  
I/O6  
I/O7  
A9  
NC  
CS1  
A11  
NC  
A16  
A12  
OE  
A15  
A13  
G
H
A10  
A1  
A2  
A3  
PIN DESCRIPTIONS  
32-pin SOP (Q)  
A0-A16  
CS1  
Address Inputs  
Chip Enable 1 Input  
Chip Enable 2 Input  
OutputꢀEnableꢀInput  
Write Enable Input  
Input/Output  
CS2  
NC  
A16  
A14  
A12  
A7  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
V
DD  
OEꢀꢀ  
WE  
2
A15  
CS2  
WE  
A13  
A8  
3
4
I/O0-I/O7ꢀ  
NC  
5
No Connection  
Power  
A6  
6
Vdd  
A5  
7
A9  
GNDꢀ  
Ground  
A4  
8
A11  
OE  
A3  
9
A2  
10  
11  
12  
13  
14  
15  
16  
A10  
CS1  
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
A1  
A0  
I/O0  
I/O1  
I/O2  
GND  
2
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
TRUTH TABLE  
Mode  
WE  
CS1  
CS2  
OE  
I/O Operation  
VDD Current  
NotꢀSelectedꢀ  
(Power-down)ꢀ  
Xꢀ  
Xꢀ  
Hꢀ  
Xꢀ  
Xꢀ  
Lꢀ  
Xꢀ  
Xꢀ  
ꢀ High-Zꢀꢀꢀ  
ꢀ High-Z  
isB1, isB2  
isB1, isB2  
OutputꢀDisabledꢀ  
Readꢀ  
Writeꢀ  
Hꢀ  
Hꢀ  
Lꢀ  
Lꢀ  
Lꢀ  
Lꢀ  
Hꢀ  
Hꢀ  
Hꢀ  
Hꢀ  
Lꢀ  
Xꢀ  
ꢀ High-Zꢀ  
dOut  
iCC  
iCC  
iCC  
din  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameter  
Value  
–0.5ꢀtoꢀVddꢀ+ꢀ0.5ꢀ  
–0.3ꢀtoꢀ4.0ꢀ  
–65ꢀtoꢀ+150ꢀ  
1.0ꢀ  
Unit  
V
V
°C  
W
Vterm  
Vdd  
TerminalꢀVoltageꢀwithꢀRespectꢀtoꢀGNDꢀ  
VddꢀRelatesꢀtoꢀGNDꢀ  
tstg  
Pt  
StorageꢀTemperatureꢀ  
PowerꢀDissipationꢀ  
Notes:  
1.ꢀꢀStressꢀgreaterꢀthanꢀthoseꢀlistedꢀunderꢀABSOLUTEꢀMAXIMUMꢀRATINGSꢀmayꢀcauseꢀpermanentꢀdamageꢀtoꢀ  
theꢀdevice.Thisꢀisꢀaꢀstressꢀratingꢀonlyꢀandꢀfunctionalꢀoperationꢀofꢀtheꢀdeviceꢀatꢀtheseꢀorꢀanyꢀotherꢀconditionsꢀ  
above those indicated in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
CAPACITANCE(1,2)  
Symbol  
Parameter  
Conditions  
Vin = 0V  
Max.  
6ꢀ  
Unit  
pF  
Cin  
Input Capacitance  
Input/OutputꢀCapacitanceꢀ  
Ci/Oꢀ  
VOut = 0V  
8ꢀ  
pF  
Notes:  
1.ꢀꢀTestedꢀinitiallyꢀandꢀafterꢀanyꢀdesignꢀorꢀprocessꢀchangesꢀthatꢀmayꢀaffectꢀtheseꢀparameters.  
2.ꢀ Testꢀconditions:ꢀTA = 25°C, fꢀ=ꢀ1ꢀMHz,ꢀVddꢀ=ꢀ3.3V.  
Integrated Silicon Solution, Inc. — www.issi.comꢀ  
3
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
AC TEST CONDITIONS  
Parameter  
Unit  
Unit  
(3.3V + 5%)  
Unit  
(1.65V-2.2V)  
(2.3V-3.6V)  
0.4VꢀtoꢀVddꢀ-ꢀ0.3Vꢀ  
1V/ꢀnsꢀ  
InputꢀPulseꢀLevelꢀ  
0.4VꢀtoꢀVddꢀ-ꢀ0.3Vꢀ  
0.4VꢀtoꢀVddꢀ-ꢀ0.3V  
1V/ꢀns  
InputꢀRiseꢀandꢀFallꢀTimesꢀ  
1V/ꢀnsꢀ  
InputꢀandꢀOutputꢀTimingꢀ  
andꢀReferenceꢀLevelꢀ(VRef  
VDDꢀ/2ꢀ  
VDDꢀꢀ+ꢀ0.05ꢀ  
2
0.9V  
)
OutputꢀLoadꢀ  
R1ꢀ( )ꢀ  
R2ꢀ( )ꢀ  
Vtmꢀ(V)ꢀ  
SeeꢀFiguresꢀ1ꢀandꢀ2ꢀ  
SeeꢀFiguresꢀ1ꢀandꢀ2ꢀ  
SeeꢀFiguresꢀ1ꢀandꢀ2  
13500  
317ꢀ  
351ꢀ  
3.3Vꢀ  
317ꢀ  
351ꢀ  
3.3Vꢀ  
10800  
1.8V  
AC TEST LOADS  
R1  
R1  
VTM  
OUTPUT  
VTM  
OUTPUT  
R2  
5 pF  
Including  
jig and  
R2  
30 pF  
Including  
jig and  
scope  
scope  
Figure 1.  
Figure 2.  
4ꢀ  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
DC ELECTRICAL CHARACTERISTICS (OverꢀOperatingꢀRange)  
VDD = 3.3V + 5%  
Symbol Parameter  
Test Conditions  
Vdd = Min.,ꢀiOh = –1ꢀmAꢀ  
Min.  
2.4ꢀ  
—ꢀ  
2ꢀ  
–0.3ꢀ  
–1ꢀ  
Max.  
—ꢀ  
0.4ꢀ  
Unit  
V
V
V
V
VOh  
VOL  
Vih  
ViL  
OutputꢀHIGHꢀVoltageꢀ  
OutputꢀLOWꢀVoltageꢀ  
InputꢀHIGHꢀVoltageꢀ  
InputꢀLOWꢀVoltage(1)  
InputꢀLeakageꢀ  
Vdd = Min.,ꢀiOL = 2.1ꢀmAꢀ  
Vdd + 0.3  
0.8ꢀ  
iLi  
GNDꢀVin Vdd  
GNDꢀVOut Vdd, OutputsꢀDisabledꢀ  
1ꢀ  
1ꢀ  
µA  
µA  
iLO  
OutputꢀLeakage  
–1ꢀ  
Note:  
1. ViL (min.) = –0.3VꢀDC;ꢀViLꢀ(min.)ꢀ=ꢀ–2.0VꢀACꢀ(pulseꢀwidthꢀ<ꢀ10ꢀns).ꢀNotꢀ100%ꢀtested.  
Vih (max.) = Vdd + 0.3V dC; Vih (max.) = Vdd + 2.0V ACꢀ(pulseꢀwidthꢀ<ꢀ10ꢀns).ꢀNotꢀ100%ꢀtested.  
DC ELECTRICAL CHARACTERISTICS (OverꢀOperatingꢀRange)  
VDD = 2.3V-3.6V  
Symbol Parameter  
Test Conditions  
Min.  
1.8ꢀ  
—ꢀ  
Max.  
—ꢀ  
Unit  
V
VOh  
VOL  
Vih  
ViL  
iLi  
OutputꢀHIGHꢀVoltageꢀ  
Vdd = Min.,ꢀiOh = –1.0ꢀmAꢀ  
OutputꢀLOWꢀVoltageꢀ  
InputꢀHIGHꢀVoltageꢀ  
InputꢀLOWꢀVoltage(1)  
InputꢀLeakageꢀ  
Vdd = Min.,ꢀiOL = 2.1ꢀmAꢀ  
0.4ꢀ  
V
2.0ꢀ  
–0.3ꢀ  
–1ꢀ  
Vdd + 0.3  
0.8ꢀ  
V
V
GNDꢀVin Vdd  
1ꢀ  
µA  
µA  
iLO  
OutputꢀLeakage  
GNDꢀVOut Vdd, OutputsꢀDisabledꢀ  
–1ꢀ  
1ꢀ  
Note:  
1. ViL (min.) = –0.3VꢀDC;ꢀViLꢀ(min.)ꢀ=ꢀ–2.0VꢀACꢀ(pulseꢀwidthꢀ<ꢀ10ꢀns).ꢀNotꢀ100%ꢀtested.  
Vih (max.) = Vdd + 0.3V dC; Vih (max.) = Vdd + 2.0V ACꢀ(pulseꢀwidthꢀ<ꢀ10ꢀns).ꢀNotꢀ100%ꢀtested.  
DC ELECTRICAL CHARACTERISTICS (OverꢀOperatingꢀRange)  
VDD = 1.65V-2.2V  
Symbol Parameter  
Test Conditions  
VDD  
Min.  
1.4ꢀ  
—ꢀ  
Max.  
—ꢀ  
Unit  
V
VOh  
VOL  
Vih  
OutputꢀHIGHꢀVoltageꢀ  
iOh = -0.1ꢀmAꢀ  
1.65-2.2Vꢀ  
1.65-2.2Vꢀ  
1.65-2.2Vꢀ  
1.65-2.2Vꢀ  
OutputꢀLOWꢀVoltageꢀ  
InputꢀHIGHꢀVoltageꢀ  
InputꢀLOWꢀVoltage  
InputꢀLeakageꢀ  
iOL = 0.1ꢀmAꢀ  
0.2ꢀ  
V
1.4ꢀ  
–0.2ꢀ  
–1ꢀ  
Vdd + 0.2  
0.4ꢀ  
V
(1)  
ViL  
iLi  
V
GNDꢀVin ꢀVdd  
1ꢀ  
µA  
µA  
iLO  
OutputꢀLeakage  
GNDꢀVOut ꢀVdd, OutputsꢀDisabledꢀ  
–1ꢀ  
1ꢀ  
Note:  
1. ViL (min.) = –0.3VꢀDC;ꢀViLꢀ(min.)ꢀ=ꢀ–2.0VꢀACꢀ(pulseꢀwidthꢀ<ꢀ10ꢀns).ꢀNotꢀ100%ꢀtested.  
Vih (max.) = Vdd + 0.3V dC; Vih (max.) = Vdd + 2.0V ACꢀ(pulseꢀwidthꢀ<ꢀ10ꢀns).ꢀNotꢀ100%ꢀtested.  
Integrated Silicon Solution, Inc. — www.issi.comꢀ  
5
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
OPERATING RANGE (VDD)  
Range  
Ambient Temperature  
0°Cꢀtoꢀ+70°Cꢀ  
VDD  
Speed  
45ns  
55ns  
55ns  
Commercialꢀ  
ꢀ Industrialꢀ  
ꢀ Automotiveꢀ  
1.65V-2.2Vꢀ  
1.65V-2.2Vꢀ  
1.65V-2.2Vꢀ  
–40°Cꢀtoꢀ+85°Cꢀ  
–40°Cꢀtoꢀ+125°Cꢀ  
OPERATING RANGE (VDD)  
Range  
Ambient Temperature  
0°Cꢀtoꢀ+70°Cꢀ  
VDD (45 nS)  
2.3V-3.6Vꢀ  
2.3V-3.6Vꢀ  
VDD (35 nS)  
3.3V+5%  
3.3V+5%  
Commercialꢀ  
ꢀ Industrialꢀ  
–40°Cꢀtoꢀ+85°Cꢀ  
OPERATING RANGE (VDD)  
Range  
Ambient Temperature  
VDD (45 nS)  
Automotiveꢀ  
–40°Cꢀtoꢀ+125°Cꢀ  
2.3V-3.6V  
POWER SUPPLY CHARACTERISTICS(1) (OverꢀOperatingꢀRange)  
-35  
-45  
-55  
Symbol Parameter  
Test Conditions  
Min. Max.  
Min. Max.  
Min. Max.  
Unit  
iCC  
VddꢀDynamicꢀOperatingꢀ  
Supply Current  
Vdd = Max.,ꢀꢀ  
iOut = 0 mA, f = fmAx  
CS1 = ViLꢀ  
Vin Vdd – 0.3V, or  
Vin 0.4V  
Com.ꢀ  
Ind.ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
8ꢀ  
12ꢀ  
15ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
6ꢀ  
8ꢀ  
12ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
5ꢀ  
7ꢀ  
12ꢀ  
mA  
Auto.ꢀ  
typ.(2)  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ4ꢀ  
iCC1  
isB2ꢀ  
Operatingꢀ  
Supply Current  
Vdd = Max.,ꢀꢀ  
iOut = 0 mA, f = 0  
CS1 = ViLꢀ  
Vin Vdd – 0.3V, or  
Vin 0.4V  
Com.ꢀ  
Ind.ꢀ  
Auto.ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
2.5ꢀ  
2.5ꢀ  
3ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
2.5ꢀ  
2.5ꢀ  
3ꢀ  
—ꢀ  
—ꢀ  
—ꢀ  
2.5ꢀ  
2.5ꢀ  
3ꢀ  
mA  
CMOSꢀStandbyꢀ  
Currentꢀ(CMOSꢀInputs)ꢀ  
Vdd = Max.,ꢀ  
Com.  
Ind.  
—ꢀ  
0.6  
2
4
18ꢀ  
2ꢀ  
4
18  
—ꢀ  
—ꢀ  
—ꢀ  
2ꢀ  
4
18  
µA  
ꢀ ꢀ  
CS1 Vdd – 0.2V,  
Vin Vdd – 0.2V, orꢀ  
Vin 0.2V, f = 0  
Auto.ꢀ  
typ.(2)  
Note:  
1. At f = fmAx, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
2.ꢀTypicalꢀvaluesꢀareꢀmeasuredꢀatꢀVddꢀ=ꢀ3.0V,TAꢀ=ꢀ25oCꢀandꢀnotꢀ100%ꢀtested.  
6
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverꢀOperatingꢀRange)  
35 ns  
45 ns  
55 ns  
Symbol  
trCꢀ  
Parameter  
Min. Max.  
Min. Max.  
Min. Max.  
55ꢀ ꢀ —ꢀ  
—ꢀ ꢀ 55ꢀ  
10ꢀ ꢀ —ꢀ  
—ꢀ ꢀ 55ꢀ  
—ꢀ ꢀ 25ꢀ  
—ꢀ ꢀ 20ꢀ  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ReadꢀCycleꢀTimeꢀ  
35ꢀ ꢀ —ꢀ  
—ꢀ ꢀ 35ꢀ  
10ꢀ ꢀ —ꢀ  
—ꢀ ꢀ 35ꢀ  
—ꢀ ꢀ 10ꢀ  
—ꢀ ꢀ 10ꢀ  
3ꢀ ꢀ —ꢀ  
0ꢀ ꢀ 10ꢀꢀ  
5ꢀ ꢀ —ꢀ  
45ꢀ ꢀ —ꢀ  
—ꢀ ꢀ 45ꢀ  
10ꢀ ꢀ —ꢀ  
—ꢀ ꢀ 45ꢀ  
—ꢀ ꢀ 20ꢀ  
—ꢀ ꢀ 15ꢀ  
tAAꢀ  
AddressꢀAccessꢀTimeꢀ  
OutputꢀHoldꢀTimeꢀ  
tOhAꢀ  
tACs1/tACs2  
CS1/CS2ꢀAccessꢀTimeꢀ  
OEꢀAccessꢀTimeꢀ  
tdOe  
(2)  
thzOe  
OEꢀtoꢀHigh-ZꢀOutputꢀ  
OEꢀtoꢀLow-ZꢀOutputꢀ  
CS1/CS2ꢀtoꢀHigh-ZꢀOutputꢀ  
CS1/CS2ꢀtoꢀLow-ZꢀOutputꢀ  
(2)  
tLzOe  
5ꢀ  
—ꢀ  
5ꢀ  
0ꢀ  
—ꢀ  
20ꢀ  
(2)  
thzCs1/thzCs2  
0ꢀ ꢀ 15ꢀ  
10ꢀ ꢀ —ꢀ  
(2)  
tLzCs1/tLzCs2  
10ꢀ ꢀ —ꢀ  
Notes:  
1.ꢀ Testꢀconditionsꢀassumeꢀsignalꢀtransitionꢀtimesꢀofꢀ5ꢀnsꢀorꢀless,ꢀtimingꢀreferenceꢀlevelsꢀofꢀ0.9V/1.5V,ꢀinputꢀpulseꢀlevelsꢀofꢀ0.4ꢀtoꢀ  
Vdd-0.2V/Vdd-0.3VꢀandꢀoutputꢀloadingꢀspecifiedꢀinꢀFigureꢀ1.  
2.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀTransitionꢀisꢀmeasuredꢀ±500ꢀmVꢀfromꢀsteady-stateꢀvoltage.ꢀNotꢀ100%ꢀtested.  
Integrated Silicon Solution, Inc. — www.issi.comꢀ  
7
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
AC WAVEFORMS  
READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OEꢀ=ꢀViL, Cs2 = WEꢀ=ꢀVih)  
tRC  
ADDRESS  
t
AA  
t
OHA  
tOHA  
DATA VALID  
DOUT  
PREVIOUS DATA VALID  
AC WAVEFORMS  
READ CYCLE NO. 2(1,3) (CS1, CS2, OE Controlled)  
t
RC  
ADDRESS  
OE  
t
AA  
tOHA  
t
HZOE  
tDOE  
t
LZOE  
CS1  
t
ACS1/tACS2  
CS2  
t
LZCS1/  
LZCS2  
t
tHZCS  
HIGH-Z  
DOUT  
DATA VALID  
Notes:  
1. WEꢀisꢀHIGHꢀforꢀaꢀReadꢀCycle.  
2.ꢀ Theꢀdeviceꢀisꢀcontinuouslyꢀselected.ꢀOE, CS1= ViL. Cs2=WE=Vih.  
3.ꢀ AddressꢀisꢀvalidꢀpriorꢀtoꢀorꢀcoincidentꢀwithꢀCS1ꢀLOWꢀandꢀCs2 high transition.  
8ꢀ  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2)ꢀ(OverꢀOperatingꢀRange)  
35ns  
45ns  
55 ns  
Symbol  
tWCꢀ  
tsCs1/tsCs2  
tAWꢀ  
thAꢀ  
tsAꢀ  
Parameter  
Min. Max.  
Min. Max.  
Min. Max.  
Unit  
WriteꢀCycleꢀTimeꢀ  
CS1/CS2ꢀtoꢀWriteꢀEndꢀ  
35ꢀꢀ ꢀ —ꢀ  
25ꢀ ꢀ —ꢀ  
45ꢀꢀ ꢀ —ꢀ  
35ꢀ ꢀ —ꢀ  
35ꢀ ꢀ —ꢀ  
0ꢀ ꢀ —ꢀ  
0ꢀ ꢀ —ꢀ  
35ꢀ ꢀ —ꢀ  
20ꢀ ꢀ —ꢀ  
0ꢀ ꢀ —ꢀ  
—ꢀ ꢀ 20ꢀ  
5ꢀ ꢀ —ꢀ  
55ꢀ ꢀ —ꢀ ꢀꢀꢀꢀ ns  
45ꢀ ꢀ —ꢀ ꢀꢀꢀꢀ ns  
45ꢀ ꢀ —ꢀ ꢀꢀꢀꢀ ns  
0ꢀ ꢀ —ꢀ ꢀꢀꢀꢀꢀns  
0ꢀ ꢀ —ꢀ ꢀꢀꢀꢀꢀns  
40ꢀ ꢀ —ꢀ ꢀꢀꢀꢀꢀns  
25ꢀ ꢀ —ꢀ ꢀꢀꢀꢀ ns  
0ꢀ ꢀ —ꢀ ꢀꢀꢀꢀꢀns  
—ꢀ ꢀ 20ꢀ ꢀꢀꢀꢀꢀns  
5ꢀ ꢀ —ꢀ ꢀꢀꢀꢀꢀns  
AddressꢀSetupꢀTimeꢀtoꢀWriteꢀEndꢀꢀ 25ꢀ ꢀ —ꢀ  
AddressꢀHoldꢀfromꢀWriteꢀEndꢀ  
AddressꢀSetupꢀTimeꢀ  
0ꢀ ꢀ —ꢀ  
0ꢀ ꢀ —ꢀ  
25ꢀ ꢀ —ꢀꢀ  
20ꢀ ꢀ —ꢀ  
0ꢀ ꢀ —ꢀ  
—ꢀ ꢀ 10ꢀ  
3ꢀ ꢀ —ꢀꢀ  
tPWe  
tsdꢀ  
WEꢀPulseꢀWidthꢀ  
DataꢀSetupꢀtoꢀWriteꢀEndꢀ  
DataꢀHoldꢀfromꢀWriteꢀEndꢀ  
WEꢀLOWꢀtoꢀHigh-ZꢀOutputꢀ  
WEꢀHIGHꢀtoꢀLow-ZꢀOutputꢀ  
thdꢀ  
thzWe  
tLzWe  
(3)  
(3)  
Notes:  
1.ꢀ Testꢀconditionsꢀassumeꢀsignalꢀtransitionꢀtimesꢀofꢀ5ꢀnsꢀorꢀless,ꢀtimingꢀreferenceꢀlevelsꢀofꢀ0.9V/1.5V,ꢀinputꢀpulseꢀlevelsꢀofꢀ0.4Vꢀtoꢀ  
Vdd-0.2V/Vdd-0.3VꢀandꢀoutputꢀloadingꢀspecifiedꢀinꢀFigureꢀ1.  
2.ꢀ TheꢀinternalꢀwriteꢀtimeꢀisꢀdefinedꢀbyꢀtheꢀoverlapꢀofꢀCS1ꢀLOW,ꢀCS2ꢀHIGHꢀandꢀUB or LB, and WEꢀLOW.ꢀAllꢀsignalsꢀmustꢀbeꢀinꢀ  
validꢀstatesꢀtoꢀinitiateꢀaꢀWrite,ꢀbutꢀanyꢀoneꢀcanꢀgoꢀinactiveꢀtoꢀterminateꢀtheꢀWrite.ꢀTheꢀDataꢀInputꢀSetupꢀandꢀHoldꢀtimingꢀareꢀ  
referenced to the rising or falling edge of the signal that terminates the write.  
3.ꢀ TestedꢀwithꢀtheꢀloadꢀinꢀFigureꢀ2.ꢀTransitionꢀisꢀmeasuredꢀ±500ꢀmVꢀfromꢀsteady-stateꢀvoltage.ꢀNotꢀ100%ꢀtested.  
AC WAVEFORMS  
WRITE CYCLE NO. 1 (CS1/CS2 Controlled, OEꢀ=ꢀHIGHꢀorꢀLOW)  
t
WC  
ADDRESS  
CS1  
t
HA  
tSCS1  
tSCS2  
CS2  
tAW  
t
PWE  
WE  
DOUT  
DIN  
t
SA  
tHZWE  
t
LZWE  
HIGH-Z  
SD  
DATA UNDEFINED  
t
t
HD  
DATA-IN VALID  
Integrated Silicon Solution, Inc. — www.issi.comꢀ  
9
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
AC WAVEFORMS  
WRITE CYCLE NO. 2 (WE Controlled: OEꢀisꢀHIGHꢀDuringꢀWriteꢀCycle)  
t
WC  
ADDRESS  
OE  
t
HA  
tSCS1  
CS1  
tSCS2  
CS2  
tAW  
t
PWE  
WE  
t
SA  
tHZWE  
t
LZWE  
HIGH-Z  
SD  
DOUT  
DIN  
DATA UNDEFINED  
t
t
HD  
DATA-IN VALID  
WRITE CYCLE NO. 3 (WE Controlled: OEꢀisꢀLOWꢀDuringꢀWriteꢀCycle)  
t
WC  
ADDRESS  
OE  
t
HA  
tSCS1  
CS1  
tSCS2  
CS2  
tAW  
t
PWE  
WE  
t
SA  
tHZWE  
t
LZWE  
HIGH-Z  
SD  
DOUT  
DIN  
DATA UNDEFINED  
t
t
HD  
DATA-IN VALID  
10  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
DATA RETENTION SWITCHING CHARACTERISTICS  
Symbol Parameter  
ddꢀforꢀDataꢀRetentionꢀ  
Test Condition  
Min. typ.(1) Max. Unit  
ꢀ ꢀ Vdr  
V
SeeꢀDataꢀRetentionꢀWaveformꢀ  
1.2ꢀ  
3.6ꢀ  
V
i
ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ  
drꢀ  
DataꢀRetentionꢀCurrentꢀ  
V
ddꢀ=ꢀ1.2V,CS1 ꢀVddꢀ–ꢀ0.2Vꢀ  
Com.ꢀ  
Ind.ꢀ  
Auto.ꢀ  
—ꢀ  
0.5ꢀ  
2ꢀ  
4ꢀ  
18  
µAꢀ  
ꢀ  
t
sdr  
DataꢀRetentionꢀSetupꢀTimeꢀ SeeꢀDataꢀRetentionꢀWaveformꢀ  
RecoveryꢀTimeꢀ SeeꢀDataꢀRetentionꢀWaveformꢀ  
0ꢀ  
—ꢀ  
—ꢀ  
ns  
ns  
trdr  
t
rC  
Note: 1.ꢀTypicalꢀvaluesꢀareꢀmeasuredꢀatꢀVddꢀ=ꢀ3.0V,TAꢀ=ꢀ25oCꢀandꢀnotꢀ100%ꢀtested.  
DATA RETENTION WAVEFORM (CS1 Controlled)  
t
Data Retention Mode  
t
RDR  
SDR  
VDD  
V
DR  
CS1 V  
0.2V  
DD  
-
CS1  
GND  
DATA RETENTION WAVEFORM (CS2 Controlled)  
Data Retention Mode  
V
DD  
t
t
RDR  
SDR  
CS2  
V
DR  
CS2 0.2V  
GND  
Integrated Silicon Solution, Inc. — www.issi.com  
11  
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
ORDERING INFORMATION  
IS62WV1288DALL (1.65V - 2.2V)  
Industrial Range: –40°C to +85°C  
Speed (ns)  
Order Part No.  
Package  
55ꢀ  
IS62WV1288DALL-55TLIꢀ  
IS62WV1288DALL-55HLIꢀ  
TSOP-I,ꢀLead-freeꢀ(8mmx20mm)ꢀ  
sTSOP-I,ꢀLead-freeꢀ(8mmx13.4mm)  
IS62WV1288DALL-55BIꢀ  
IS62WV1288DALL-55BLIꢀ  
miniꢀBGAꢀ(6mmꢀxꢀ8mm)ꢀ  
miniꢀBGAꢀ(6mmꢀxꢀ8mm),ꢀLead-free  
ORDERING INFORMATION  
IS62WV1288DBLL (2.3V - 3.6V)  
Industrial Range: –40°C to +85°C1  
Speed (ns)  
Order Part No.  
Package  
45ꢀ  
IS62WV1288DBLL-45TLIꢀ  
TSOP-I,ꢀLead-freeꢀ(8mmx20mm)ꢀ  
sTSOP-I,ꢀLead-freeꢀ(8mmx13.4mm)ꢀ  
SOP,ꢀLead-free  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀIS62WV1288DBLL-45HLIꢀ  
IS62WV1288DBLL-45QLIꢀ  
IS62WV1288DBLL-45BIꢀ  
IS62WV1288DBLL-45BLIꢀ  
miniꢀBGAꢀ(6mmꢀxꢀ8mm)ꢀ  
miniꢀBGAꢀ(6mmꢀxꢀ8mm),ꢀLead-free  
Automotive Range: –40°C to +125°C  
Speed (ns)  
Order Part No.  
Package  
45ꢀ  
IS65WV1288DBLL-45TLA3ꢀ TSOP-I,ꢀLead-freeꢀ(8mmx20mm)ꢀ  
IS65WV1288DBLL-45HLA3ꢀ sTSOP-I,ꢀLead-freeꢀ(8mmx13.4mm)ꢀ  
IS65WV1288DBLL-45QLA3ꢀ SOP,ꢀLead-freeꢀ  
Notes:  
1.ꢀSpeedꢀ=ꢀ35nsꢀforꢀtemperatureꢀrangeꢀofꢀ0oCꢀtoꢀ+70oCꢀorꢀforꢀVddꢀ=ꢀ3.3Vꢀ±ꢀ5%.  
12  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
Integrated Silicon Solution, Inc. — www.issi.comꢀ  
13  
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
14  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
Integrated Silicon Solution, Inc. — www.issi.comꢀ  
15  
Rev. C1  
11/1/2016  
®
Long-term Support  
World Class Quality  
IS62WV1288DALL/DBLL  
IS65WV1288DALL/DBLL  
16  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. C1  
11/1/2016  

相关型号:

IS62WV20488ALL

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
ISSI

IS62WV20488ALL-35MI

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
ISSI

IS62WV20488ALL-35TI

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
ISSI

IS62WV20488ALL-35TLI

Standard SRAM, 2MX8, 35ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44
ISSI

IS62WV20488BLL

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
ISSI

IS62WV20488BLL-25MI

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
ISSI

IS62WV20488BLL-25MLI

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
ISSI

IS62WV20488BLL-25TI

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
ISSI

IS62WV20488BLL-25TLI

2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
ISSI

IS62WV20488EALL

TTL compatible interface levels
ISSI

IS62WV20488EBLL

TTL compatible interface levels
ISSI

IS62WV25616ALL

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
ISSI