IS63LV1024-8KL [ISSI]

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT; 128K ×8高速CMOS静态RAM 3.3V革命引脚
IS63LV1024-8KL
型号: IS63LV1024-8KL
厂家: INTEGRATED SILICON SOLUTION, INC    INTEGRATED SILICON SOLUTION, INC
描述:

128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
128K ×8高速CMOS静态RAM 3.3V革命引脚

内存集成电路 静态存储器 光电二极管
文件: 总18页 (文件大小:615K)
中文:  中文翻译
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IS63LV1024  
IS63LV1024L  
128K x 8 HIGH-SPEED CMOS STATIC RAM  
3.3V REVOLUTIONARY PINOUT  
JANUARY2007  
DESCRIPTION  
FEATURES  
TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,  
low power, 131,072-word by 8-bit CMOS static RAM in  
revolutionarypinout.TheIS63LV1024/IS63LV1024Lisfab-  
ricatedusingISSI'shigh-performanceCMOStechnology.  
This highly reliable process coupled with innovative circuit  
design techniques, yields higher performance and low  
powerconsumptiondevices.  
• High-speed access times:  
8, 10, 12 ns  
• High-performance, low-power CMOS process  
• Multiple center power and ground pins for  
greater noise immunity  
• Easy memory expansion with CE and OE  
options  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 250 µW (typical) with CMOS input levels.  
CE power-down  
• Fully static operation: no clock or refresh  
required  
TheIS63LV1024/IS63LV1024Loperatesfromasingle3.3V  
power supply and all inputs are TTL-compatible.  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
• Packages available:  
– 32-pin 300-mil SOJ  
– 32-pin 400-mil SOJ  
– 32-pin TSOP (Type II)  
– 32-pin STSOP (Type I)  
– 36-pin BGA (8mmx10mm)  
• Lead-free Available  
FUNCTIONAL BLOCK DIAGRAM  
128K X 8  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O0-I/O7  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. I  
1/26/07  
IS63LV1024  
IS63LV1024L  
PIN CONFIGURATION  
32-Pin SOJ  
PIN CONFIGURATION  
32-Pin TSOP (Type II) (T)  
32-Pin STSOP (Type I) (H)  
A0  
A1  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A16  
A15  
A14  
A13  
OE  
2
A0  
A1  
A2  
A3  
CE  
I/O0  
I/O1  
VDD  
GND  
I/O2  
I/O3  
WE  
A4  
1
2
3
4
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A16  
A15  
A14  
A13  
OE  
I/O7  
I/O6  
GND  
VDD  
I/O5  
I/O4  
A12  
A11  
A10  
A9  
A2  
3
A3  
4
CE  
5
I/O0  
I/O1  
VDD  
GND  
I/O2  
I/O3  
WE  
A4  
6
I/O7  
I/O6  
GND  
VDD  
I/O5  
I/O4  
A12  
A11  
A10  
A9  
7
8
9
9
10  
11  
12  
13  
14  
15  
16  
10  
11  
12  
13  
14  
15  
16  
A5  
A6  
A7  
A5  
A8  
A6  
A7  
A8  
PIN DESCRIPTIONS  
PIN CONFIGURATION  
36-mini BGA (B) (8 mm x 10 mm)  
A0-A16  
CE  
Address Inputs  
Chip Enable Input  
1
2
3
4
5
6
OE  
Output Enable Input  
Write Enable Input  
DataInputs/Outputs  
Power  
WE  
I/O0-I/O7  
VDD  
NC  
WE  
NC  
A3  
A4  
A5  
A6  
A7  
A0  
I/O4  
I/O5  
GND  
VDD  
I/O6  
I/O7  
A9  
A1  
A2  
A8  
I/O  
A
B
C
D
E
F
GND  
Ground  
0
I/O  
1
VDD  
GND  
NC  
CE  
NC  
A16  
A12  
I/O  
2
OE  
A15  
A13  
I/O  
3
G
H
A10  
A11  
A14  
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. I  
1/26/07  
IS63LV1024  
IS63LV1024L  
TRUTH TABLE  
Mode  
WE  
CE  
OE  
I/OOperation  
VDD Current  
Not Selected  
(Power-down)  
X
H
X
High-Z  
ISB1, ISB2  
OutputDisabled  
Read  
H
H
L
L
L
L
H
L
High-Z  
DOUT  
DIN  
ICC1,ICC2  
ICC1,ICC2  
ICC1,ICC2  
Write  
X
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol  
VTERM  
TSTG  
Parameter  
Value  
–0.5 to VDD + 0.5  
–65 to +150  
1.0  
Unit  
V
°C  
W
Terminal Voltage with Respect to GND  
StorageTemperature  
PowerDissipation  
PT  
Notes:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect  
reliability.  
OPERATING RANGE  
Range  
Commercial  
Industrial  
AmbientTemperature  
0°C to +70°C  
VDD  
3.3V 0.3V  
3.3V 0.15V  
–40°Cto+85°C  
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)  
Symbol Parameter  
TestConditions  
Min.  
2.4  
Max.  
Unit  
V
VOH  
VOL  
VIH  
VIL  
ILI  
OutputHIGHVoltage  
VDD = Min., IOH = –4.0 mA  
VDD = Min., IOL = 8.0 mA  
OutputLOWVoltage  
Input HIGH Voltage  
Input LOW Voltage(1)  
InputLeakage  
0.4  
V
2.2  
VDD + 0.3  
0.8  
V
–0.3  
V
GND VIN VDD  
Com.  
Ind.  
–1  
–5  
1
5
µA  
ILO  
OutputLeakage  
GND VOUT VDD, Outputs Disabled  
Com.  
Ind.  
–1  
–5  
1
5
µA  
Notes:  
1. VIL = –3.0V for pulse width less than 10 ns.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
3
Rev. I  
1/26/07  
IS63LV1024  
IS63LV1024L  
IS63LV1024 POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)  
-8 ns  
Min. Max.  
-10 ns  
Min. Max.  
-12 ns  
Min. Max.  
Symbol Parameter  
Test Conditions  
Unit  
ICC1  
VDD Operating  
Supply Current  
VDD = Max., CE = VIL  
IOUT = 0 mA, f = Max.  
Com.  
Ind.  
160  
170  
105  
150  
160  
95  
130  
140  
75  
mA  
typ.(2)  
Ind. (@15 ns)  
90  
ISB  
TTL Standby  
Current  
(TTL Inputs)  
VDD = Max.,  
VIN = VIH or VIL  
CE VIH, f = Max  
Com.  
Ind.  
55  
55  
45  
45  
40  
40  
mA  
mA  
mA  
ISB1  
ISB2  
TTL Standby  
Current  
(TTL Inputs)  
VDD = Max.,  
VIN = VIH or VIL  
CE VIH, f = 0  
Com.  
Ind.  
25  
30  
25  
30  
25  
30  
CMOS Standby  
Current  
VDD = Max.,  
CE VDD – 0.2V,  
Com.  
Ind.  
5
10  
0.5  
5
10  
0.5  
5
10  
0.5  
typ.(2)  
(CMOS Inputs)  
VIN VDD – 0.2V, or  
VIN 0.2V, f = 0  
Notes:  
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
2. Typical values are measured at VDD = 3.3V, TA = 25oC. Not 100% tested.  
IS63LV1024L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)  
-8 ns  
Min. Max.  
-10 ns  
Min. Max.  
-12 ns  
Min. Max.  
Symbol Parameter  
Test Conditions  
Unit  
ICC1  
ISB  
VDD Operating  
Supply Current  
VDD = Max., CE = VIL  
IOUT = 0 mA, f = Max.  
Com.  
Ind.  
100  
110  
75  
95  
105  
70  
90  
100  
65  
mA  
typ.(2)  
TTL Standby  
Current  
(TTL Inputs)  
VDD = Max.,  
VIN = VIH or VIL  
CE VIH, f = Max  
Com.  
Ind.  
35  
40  
30  
35  
25  
30  
mA  
mA  
mA  
ISB1  
ISB2  
TTL Standby  
Current  
(TTL Inputs)  
VDD = Max.,  
VIN = VIH or VIL  
CE VIH, f = 0  
Com.  
Ind.  
15  
20  
15  
20  
15  
20  
CMOS Standby  
Current  
VDD = Max.,  
CE VDD – 0.2V,  
Com.  
Ind.  
1
1.5  
0.05  
1
1.5  
0.05  
1
1.5  
0.05  
typ.(2)  
(CMOS Inputs)  
VIN VDD – 0.2V, or  
VIN 0.2V, f = 0  
Notes:  
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
2. Typical values are measured at VDD = 3.3V, TA = 25oC. Not 100% tested.  
CAPACITANCE(1,2)  
Symbol  
Parameter  
Conditions  
VIN = 0V  
Max.  
Unit  
pF  
pF  
CIN  
InputCapacitance  
Input/OutputCapacitance  
6
8
CI/O  
VOUT = 0V  
Notes:  
1. Tested initially and after any design or process changes that may affect these parameters.  
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.  
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. I  
1/26/07  
IS63LV1024  
IS63LV1024L  
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)  
-8 ns  
Min.  
-10 ns  
Min.  
-12 ns  
Min.  
Symbol  
tRC  
Parameter  
Max.  
8
Max.  
10  
10  
5
Max.  
12  
12  
6
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Read Cycle Time  
8
2
10  
2
12  
2
tAA  
Address Access Time  
Output Hold Time  
CE Access Time  
tOHA  
8
tACE  
0
0
0
tDOE  
OE Access Time  
4
(2)  
tLZOE  
OE to Low-Z Output  
OE to High-Z Output  
CE to Low-Z Output  
CE to High-Z Output  
CE to Power Up Time  
CE to Power Down Time  
4
5
6
(2)  
tHZOE  
0
0
0
(2)  
tLZCE  
3
4
3
5
3
6
(2)  
tHZCE  
0
0
0
tPU  
tPD  
0
8
0
10  
0
12  
Notes:  
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V  
loading specified in Figure 1.  
2. Tested with the loading specified in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested.  
AC TEST CONDITIONS  
Parameter  
Input Pulse Level  
Input Rise and Fall Times  
Unit  
0V to 3.0V  
3 ns  
Input and Output Timing  
andReferenceLevels  
1.5V  
OutputLoad  
See Figures 1 and 2  
AC TEST LOADS  
317 Ω  
3.3V  
ZOUT = 50 Ω  
OUTPUT  
OUTPUT  
50 Ω  
351 Ω  
5 pF  
Including  
jig and  
scope  
VT = 1.5V  
Figure 1  
Figure 2  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
5
Rev. I  
1/26/07  
IS63LV1024  
IS63LV1024L  
AC WAVEFORMS  
READ CYCLE NO. 1(1,2)  
t
RC  
ADDRESS  
t
AA  
t
OHA  
t
OHA  
DATA VALID  
DOUT  
PREVIOUS DATA VALID  
READ1.eps  
READ CYCLE NO. 2(1,3)  
t
RC  
ADDRESS  
OE  
t
AA  
t
OHA  
t
HZOE  
t
DOE  
t
t
LZOE  
ACE  
CE  
t
HZCE  
t
LZCE  
HIGH-Z  
DOUT  
DATA VALID  
CE_RD2.eps  
Notes:  
1. WE is HIGH for a Read Cycle.  
2. The device is continuously selected. OE, CE = VIL.  
3. Address is valid prior to or coincident with CE LOW transitions.  
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. I  
1/26/07  
IS63LV1024  
IS63LV1024L  
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)  
-8 ns  
-10 ns  
-12 ns  
Symbol  
tWC  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
ns  
Write Cycle Time  
CE to Write End  
8
7
8
10  
7
12  
8
tSCE  
ns  
tAW  
Address Setup Time to  
Write End  
8
8
ns  
tHA  
tSA  
(1)  
tPWE  
1
(2)  
tPWE  
2
Address Hold from  
Write End  
0
0
0
ns  
Address Setup Time  
0
7
4
0
7
5
0
8
6
ns  
ns  
ns  
ns  
ns  
ns  
ns  
WE Pulse Width (OE High)  
WE Pulse Width (OE Low)  
Data Setup to Write End  
Data Hold from Write End  
WE LOW to High-Z Output  
WE HIGH to Low-Z Output  
8
10  
5
12  
6
tSD  
tHD  
5
0
0
0
(2)  
tHZWE  
3
3
3
(2)  
tLZWE  
Notes:  
1. Test conditions assume signal transition times of 3ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and  
output loading specified in Figure 1.  
2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested.  
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but  
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of  
the signal that terminates the Write.  
AC WAVEFORMS  
WRITE CYCLE NO. 1(1,2 (CE Controlled, OE = HIGH or LOW)  
t
WC  
VALID ADDRESS  
SCE  
ADDRESS  
t
SA  
t
t
HA  
CE  
t
AW  
t
PWE1  
PWE2  
t
WE  
t
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
D
OUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
CE_WR1.eps  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
7
Rev. I  
1/26/07  
IS63LV1024  
IS63LV1024L  
AC WAVEFORMS  
WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle)  
t
WC  
ADDRESS  
OE  
VALID ADDRESS  
t
HA  
LOW  
CE  
t
AW  
t
PWE1  
WE  
t
SA  
t
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
D
OUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
CE_WR2.eps  
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)  
t
WC  
ADDRESS  
OE  
VALID ADDRESS  
t
HA  
LOW  
LOW  
CE  
t
t
AW  
t
PWE2  
WE  
t
SA  
HZWE  
t
LZWE  
HIGH-Z  
DATA UNDEFINED  
D
OUT  
t
SD  
t
HD  
DATAIN VALID  
DIN  
CE_WR3.eps  
Notes:  
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,  
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling  
edge of the signal that terminates the Write.  
2. I/O will assume the High-Z state if OE > VIH.  
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. I  
1/26/07  
IS63LV1024  
IS63LV1024L  
DATA RETENTION SWITCHING CHARACTERISTICS  
Symbol  
VDR  
Parameter  
Test Condition  
Options  
Min.  
Typ.(1)  
Max.  
Unit  
V
VDD for Data Retention  
Data Retention Current  
See Data Retention Waveform  
VDD = 2.0V, CE VDD – 0.2V  
2.0  
3.6  
IDR  
IS63LV1024  
0.5  
10  
mA  
IS63LV1024L  
0.05  
1.5  
tSDR  
tRDR  
Data Retention Setup Time  
Recovery Time  
See Data Retention Waveform  
0
ns  
ns  
See Data Retention Waveform  
tRC  
O
Note 1: Typical values are measured at VDD = 3.0V, T  
A
= 25 C and not 100% tested.  
DATA RETENTION WAVEFORM (CE Controlled)  
tSDR  
Data Retention Mode  
tRDR  
VDD  
VDR  
CE VDD - 0.2V  
CE  
GND  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
9
Rev. I  
1/26/07  
IS63LV1024  
IS63LV1024L  
IS63LV1024 ORDERING INFORMATION  
Commercial Range: 0°C to +70°C  
Speed (ns) Order Part No.  
Package  
8
IS63LV1024-8K  
IS63LV1024-8KL  
400-mil Plastic SOJ  
400-mil Plastic SOJ, Lead-free  
10  
IS63LV1024-10T  
IS63LV1024-10J  
IS63LV1024-10K  
TSOP (Type II)  
300-mil Plastic SOJ  
400-mil Plastic SOJ  
12  
IS63LV1024-12T  
IS63LV1024-12J  
IS63LV1024-12KL  
TSOP (Type II)  
300-mil Plastic SOJ  
400-mil Plastic SOJ, Lead-free  
Industrial Range: –40°C to +85°C  
Speed(ns)  
OrderPartNo.  
IS63LV1024-8KI  
IS63LV1024-10KI  
IS63LV1024-12TI  
Package  
8
400-milPlasticSOJ  
400-milPlasticSOJ  
TSOP(TypeII)  
10  
12  
10  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. I  
1/26/07  
IS63LV1024  
IS63LV1024L  
IS63LV1024L ORDERING INFORMATION  
Commercial Range: 0°C to +70°C  
Speed(ns)  
Order Part No.  
Package  
8
IS63LV1024L-8T  
IS63LV1024L-8B  
TSOP (Type II)  
mBGA(8mmx10mm)  
10  
12  
IS63LV1024L-10T  
IS63LV1024L-10TL  
IS63LV1024L-10HL  
TSOP (Type II)  
TSOP (Type II), Lead-free  
sTSOP (Type I) (8mm x13.4mm), Lead-free  
IS63LV1024L-12T  
TSOP (Type II)  
IS63LV1024L-12H  
IS63LV1024L-12J  
IS63LV1024L-12JL  
IS63LV1024L-12B  
sTSOP (Type I) (8mm x13.4mm)  
300-mil Plastic SOJ  
300-mil Plastic SOJ, Lead-free  
mBGA(8mmx10mm)  
Industrial Range: –40°C to +85°C  
Speed(ns)  
Order Part No.  
Package  
8
IS63LV1024L-8TI  
IS63LV1024L-8JI  
IS63LV1024L-8KI  
IS63LV1024L-8BI  
TSOP (Type II)  
300-mil Plastic SOJ  
400-mil Plastic SOJ  
mBGA(8mmx10mm)  
10  
12  
IS63LV1024L-10HI  
IS63LV1024L-10JLI  
IS63LV1024L-10KLI  
IS63LV1024L-10TLI  
sTSOP (Type I) (8mm x13.4mm)  
300-mil Plastic SOJ, Lead-free  
400-mil Plastic SOJ, Lead-free  
TSOP (Type II), Lead-free  
IS63LV1024L-12BI  
IS63LV1024L-12BLI  
IS63LV1024L-12TI  
mBGA(8mmx10mm)  
mBGA(8mmx10mm),Lead-free  
TSOP (Type II)  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
11  
Rev. I  
1/26/07  
PACKAGING INFORMATION  
400-mil Plastic SOJ  
Package Code: K  
Notes:  
1. Controlling dimension:  
millimeters.  
N
N/2+1  
2. BSC = Basic lead spacing  
between centers.  
3. Dimensions D and E1 do not  
include mold flash protrusions  
and should be measured from  
the bottom of the package.  
4. Reference document: JEDEC  
MS-027.  
E1  
E
1
N/2  
SEATING PLANE  
D
A
b
C
A2  
e
B
A1  
E2  
Millimeters  
Inches  
Min Max  
Millimeters  
Inches  
Min Max  
Millimeters  
Inches  
Symbol Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
No. Leads (N)  
28  
32  
36  
A
A1  
A2  
B
b
C
D
E
E1  
E2  
e
3.25 3.75  
0.128 0.148  
3.25  
0.64  
2.08  
0.38  
0.66  
0.18  
20.82 21.08  
11.05 11.30  
10.03 10.29  
9.40 BSC  
3.75  
0.51  
0.81  
0.33  
0.128 0.148  
3.25 3.75  
0.128 0.148  
0.64  
2.08  
0.025  
0.082  
0.025  
0.082  
0.64  
2.08  
0.025  
0.082  
0.38 0.51  
0.66 0.81  
0.18 0.33  
18.29 18.54  
11.05 11.30  
10.03 10.29  
9.40 BSC  
0.015 0.020  
0.026 0.032  
0.007 0.013  
0.720 0.730  
0.435 0.445  
0.395 0.405  
0.370 BSC  
0.015 0.020  
0.026 0.032  
0.007 0.013  
0.820 0.830  
0.435 0.445  
0.395 0.405  
0.370 BSC  
0.38 0.51  
0.66 0.81  
0.18 0.33  
23.37 23.62  
11.05 11.30  
10.03 10.29  
9.40 BSC  
0.015 0.020  
0.026 0.032  
0.007 0.013  
0.920 0.930  
0.435 0.445  
0.395 0.405  
0.370 BSC  
1.27 BSC  
0.050 BSC  
1.27 BSC  
0.050 BSC  
1.27 BSC  
0.050 BSC  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. F  
10/29/03  
PACKAGING INFORMATION  
Millimeters  
Symbol Min Max  
No. Leads (N)  
Inches  
Min Max  
Millimeters  
Inches  
Min Max  
Millimeters  
Min Max  
Inches  
Min Max  
Min  
Max  
40  
42  
44  
A
A1  
A2  
B
b
C
D
E
E1  
E2  
e
3.25 3.75  
0.128 0.148  
3.25  
0.64  
2.08  
0.38  
0.66  
0.18  
27.18 27.43  
11.05 11.30  
10.03 10.29  
9.40 BSC  
3.75  
0.51  
0.81  
0.33  
0.128 0.148  
3.25 3.75  
0.128 0.148  
0.64  
2.08  
0.025  
0.082  
0.025  
0.082  
0.64  
2.08  
0.025  
0.082  
0.38 0.51  
0.66 0.81  
0.18 0.33  
25.91 26.16  
11.05 11.30  
10.03 10.29  
9.40 BSC  
0.015 0.020  
0.026 0.032  
0.007 0.013  
1.020 1.030  
0.435 0.445  
0.395 0.405  
0.370 BSC  
0.015 0.020  
0.026 0.032  
0.007 0.013  
1.070 1.080  
0.435 0.445  
0.395 0.405  
0.370 BSC  
0.38 0.51  
0.66 0.81  
0.18 0.33  
28.45 28.70  
11.05 11.30  
10.03 10.29  
9.40 BSC  
0.015 0.020  
0.026 0.032  
0.007 0.013  
1.120 1.130  
0.435 0.445  
0.395 0.405  
0.370 BSC  
1.27 BSC  
0.050 BSC  
1.27 BSC  
0.050 BSC  
1.27 BSC  
0.050 BSC  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. F  
10/29/03  
PACKAGING INFORMATION  
300-mil Plastic SOJ  
Package Code: J  
N
E1  
E
1
SEATING PLANE  
D
A
A2  
B
C
e
b
A1  
E2  
Notes:  
1. Controlling dimension: inches, unless otherwise  
specified.  
2. BSC = Basic lead spacing between centers.  
3. Dimensions D and E1 do not include mold flash  
protrusionsandshouldbemeasuredfromthebottomof  
MILLIMETERS  
INCHES  
Min. Typ. Max.  
Sym. Min. Typ. Max.  
N0.  
Leads  
thepackage  
.
4. Formed leads shall be planar with respect to one  
24/26  
another within 0.004 inches at the seating plane.  
A
3.56  
0.140  
A1  
A2  
b
0.64  
2.41  
0.41  
0.66  
0.20  
17.02  
8.26  
7.49  
6.27  
0.025  
0.095  
0.016  
0.026  
0.008  
0.670  
0.325  
0.295  
0.247  
2.67  
0.51  
0.81  
0.25  
17.27  
8.76  
7.75  
7.29  
0.105  
0.020  
0.032  
0.010  
0.680  
0.345  
0.305  
0.287  
B
C
D
E
E1  
E2  
e
1.27 BSC  
0.050 BSC  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. D  
02/25/03  
PACKAGING INFORMATION  
300-mil Plastic SOJ  
Package Code: J  
MILLIMETERS  
INCHES  
MILLIMETERS  
INCHES  
Sym. Min. Typ. Max.  
Min. Typ. Max.  
Sym. Min. Typ. Max.  
Min. Typ. Max.  
N0.  
N0.  
Leads  
28  
Leads  
32  
A
3.56  
0.140  
A
3.56  
0.140  
A1  
A2  
b
0.64  
2.41  
0.41  
0.66  
0.20  
18.29  
8.26  
7.49  
6.27  
0.025  
0.095  
0.016  
0.026  
0.008  
0.720  
0.325  
0.295  
0.247  
A1  
A2  
b
0.64  
2.41  
0.41  
0.66  
0.20  
20.83  
8.26  
7.49  
6.27  
0.025  
0.095  
0.016  
0.026  
0.008  
0.820  
0.325  
0.295  
0.247  
2.67  
0.51  
0.81  
0.25  
18.54  
8.76  
7.75  
7.29  
0.105  
0.020  
0.032  
0.010  
0.730  
0.345  
0.305  
0.287  
2.67  
0.51  
0.81  
0.25  
21.08  
8.76  
7.75  
7.29  
0.105  
0.020  
0.032  
0.010  
0.830  
0.345  
0.305  
0.287  
B
B
C
C
D
D
E
E
E1  
E2  
e
E1  
E2  
e
1.27 BSC  
0.050 BSC  
1.27 BSC  
0.050 BSC  
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev.D  
02/25/03  
PACKAGING INFORMATION  
Plastic STSOP - 32 pins  
Package Code: H (Type I)  
A2  
A
A1  
1
N
E
b
e
D1  
D
S
SEATING PLANE  
L
α
C
Plastic STSOP (H - Type I)  
Millimeters  
Inches  
Notes:  
Symbol Min Max  
Min  
Max  
1. Controlling dimension: millimeters, unless otherwise  
specified.  
2. BSC = Basic lead spacing between centers.  
3. Dimensions D1 and E do not include mold flash protru-  
sions and should be measured from the bottom of the package  
4. Formed leads shall be planar with respect to one another  
within 0.004 inches at the seating plane.  
Ref. Std.  
N
32  
A
A1  
A2  
b
C
D
D1  
E
e
0.05  
1.25  
0.049  
0.041  
0.009  
.
0.002  
0.037  
0.007  
0.95 1.05  
0.17 0.23  
0.14 0.16  
13.20 13.60  
11.70 11.90  
7.90 8.10  
0.50 BSC  
0.0055 0.0063  
0.520  
0.461  
0.311  
0.535  
0.469  
0.319  
0.020 BSC  
L
S
0.30 0.70  
0.28 Typ.  
0.012  
0.011 Typ.  
0.028  
α
0°  
5°  
0°  
5°  
Integrated Silicon Solution, Inc.  
PK13197H32 Rev.B 04/21/03  
PACKAGING INFORMATION  
Mini Ball Grid Array  
Package Code: B (36-pin)  
Top View  
Bottom View  
φ b (36x)  
1
2
3
4
5 6  
6
5
4
3
2
1
A
B
C
D
E
F
A
B
C
D
E
F
e
D
D1  
G
H
G
H
e
E
E1  
Notes:  
1. Controllingdimensionsareinmillimeters.  
A2  
A
A1  
SEATING PLANE  
mBGA - 6mm x 8mm  
mBGA - 8mm x 10mm  
MILLIMETERS  
INCHES  
Min. Typ. Max.  
36  
MILLIMETER  
INCHES  
Min. Typ. Max.  
36  
Sym. Min. Typ. Max.  
Sym. Min. Typ. Max.  
N0.  
Leads  
N0.  
Leads  
36  
36  
A
1.20  
0.30  
0.047  
0.012  
A
1.20  
0.30  
0.047  
0.012  
A1  
A2  
D
0.24  
0.60  
0.009  
0.024  
A1  
A2  
D
0.24  
0.60  
0.009  
0.024  
7.90 8.00 8.10  
5.25BSC  
0.311 0.315 0.319  
0.207BSC  
9.90 10.00 10.10  
5.25BSC  
0.390 0.394 0.398  
.207BSC  
D1  
E
D1  
E
5.90 6.00 6.10  
3.75BSC  
0.232 0.236 0.240  
0.148BSC  
7.90 8.00 8.10  
3.75BSC  
0.311 0.315 0.319  
0.148BSC  
E1  
e
E1  
e
0.75BSC  
0.030BSC  
0.75BSC  
0.030BSC  
b
0.30 0.35 0.40  
0.012 0.014 0.016  
b
0.30 0.35 0.40  
0.012 0.014 0.016  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. E  
01/15/03  
PACKAGING INFORMATION  
PlasticTSOP  
Package Code: T (Type II)  
N
N/2+1  
Notes:  
1. Controlling dimension: millimieters,  
unless otherwise specified.  
2. BSC = Basic lead spacing  
between centers.  
3. Dimensions D and E1 do not  
include mold flash protrusions and  
should be measured from the  
bottom of the package.  
E
E1  
4. Formed leads shall be planar with  
respect to one another within  
0.004 inches at the seating plane.  
1
N/2  
D
SEATING PLANE  
A
ZD  
.
L
α
e
b
C
A1  
Plastic TSOP (T - Type II)  
Millimeters Inches  
Millimeters  
Inches  
Millimeters  
Inches  
Symbol Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Ref. Std.  
No. Leads (N)  
32  
44  
50  
A
A1  
b
C
D
E1  
E
e
1.20  
0.047  
1.20  
0.15  
0.45  
0.21  
0.047  
1.20  
0.047  
0.05 0.15  
0.30 0.52  
0.12 0.21  
20.82 21.08  
10.03 10.29  
11.56 11.96  
1.27 BSC  
0.002 0.006  
0.012 0.020  
0.005 0.008  
0.820 0.830  
0.391 0.400  
0.451 0.466  
0.050 BSC  
0.05  
0.30  
0.12  
18.31 18.52  
10.03 10.29  
11.56 11.96  
0.80 BSC  
0.002 0.006  
0.012 0.018  
0.005 0.008  
0.721 0.729  
0.395 0.405  
0.455 0.471  
0.032 BSC  
0.05 0.15  
0.30 0.45  
0.12 0.21  
20.82 21.08  
10.03 10.29  
11.56 11.96  
0.80 BSC  
0.002 0.006  
0.012 0.018  
0.005 0.008  
0.820 0.830  
0.395 0.405  
0.455 0.471  
0.031 BSC  
L
ZD  
α
0.40 0.60  
0.95 REF  
0.016 0.024  
0.037 REF  
0.41  
0.81 REF  
0°  
0.60  
0.016 0.024  
0.032 REF  
0.40 0.60  
0.88 REF  
0.016 0.024  
0.035 REF  
0°  
5°  
0°  
5°  
5°  
0°  
5°  
0°  
5°  
0°  
5°  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. F  
06/18/03  

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