HAL400S [ITT]
Linear Hall Effect Sensor IC; 线性霍尔效应传感器IC
| 型号： | HAL400S |
| 厂家： | 
ITT Cannon |
| 描述： | Linear Hall Effect Sensor IC |
| 文件： | 总16页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
HAL400
Linear Hall Effect
Sensor IC
Edition Jan. 23, 1997
6251-346-3PD
HAL400
PRELIMINARY DATA SHEET
Linear Hall Effect Sensor IC
in CMOS technology
Specifications
Marking Code
Type
Release Notes: Revision bars indicate significant
changes to the previous edition.
Temperature Range
Features:
A
E
C
The linear CMOS Hall Sensor is used for precise mea-
surements of the magnetic flux. The differential output
voltage is proportional to the magnetic flux density at a
right angle to the sensitive area. Due to chopper com-
pensation, low magnetic offset and offset drift is
achieved. It can be used as a current sensor or can de-
tect any mechanical movement. Very accurate angle
measurements or distance measurements can be done.
The sensor is very robust and can be used in an electri-
cally and mechanically hostile environment.
HAL400S
400A
400E
400C
Operating Junction Temperature Range
A: T = –40 °C to +170 °C
J
E: T = –40 °C to +100 °C
J
C: T = 0 °C to +100 °C
J
– low magnetic offset
– extremely sensitive
– 4.8 to 12 Volt operation
Designation of Hall Sensors
HALXXXPP-T
Temperature Range: A, E, or C
Package: S for SOT-89A
– wide temperature range T = –40 to +150 °C
A
– over-voltage protection
– differential output
Type: 400
– accurate absolute measurements of DC and low fre-
quency magnetic flux densities
Example: HAL400S-E
– on-chip temperature compensation
– low 1/f-noise
→ Type: 400
→ Package: SOT-89A
→ Temperature Range: T = –40 °C to +100 °C
J
Solderability
– Package SOT-89A: according to IEC68-2-58
V
1
DD
2
3
OUT1
OUT2
4
GND
Fig. 1: Pin configuration
2
ITT Semiconductors
HAL400
PRELIMINARY DATA SHEET
Functional Description
External filtering or integrating measurement can be
done to eliminate the AC component of the signal. So
the influence of mechanical stress and temperature
cycling is suppressed. No adjustment of magnetic offset
is needed.
GND
4
The sensitivity is stabilized over a wide range of temper-
ature and supply voltage due to internal voltage regula-
tion and circuits for temperature compensation.
Oscillator
Temp.
Dependant
Bias
Offset
Compensation;
Hallplate
Switching
Matrix
Offset Compensation (see Fig. 3)
The Hall Offset Voltage is the residual voltage measured
in absence of a magnetic field (zero-field residual volt-
age). This voltage is caused by mechanical stress and
can be modeled by a displacement of the connections
for voltage measurement and/or current supply.
Protection
Device
V
OUT1
2
OUT2
3
Compensation of this kind of offset is done by cyclic
commutating the connections for current flow and volt-
age measurement.
DD
1
Fig. 2: Block diagram of the HAL 400 (top view)
– First cycle:
The hall supply current flowsbetween the points 4 and
2. In the absence of a magnetic field V is the Hall Off-
13
The Linear Hall Sensor measures accurate constant
and low frequency magnetic flux densities. The differen-
tial output voltage is proportional to the magnetic flux
density passing vertically through the sensitive area of
the chip. The common mode voltage (average of the
voltages on pin 2 and pin 3) of the differential output am-
plifier is a constant 2.2 V.
set Voltage (+V ). In case of a magnetic field, V is
Offs
13
the sum of the Hall voltage (V ) and V
.
H
Offs
V
13
= V
V
H + Offs
– Second cycle:
The hall supply current flows between the points 1 and
3. In the absence of a magnetic field V is the Hall Off-
24
set Voltage with negativ polarity (–V ). In case of a
Offs
The differential output voltage consists of two compo-
nents due to the switching offset compensation tech-
nique. The average of the differential output voltage rep-
resents the magnetic flux density. This component is
overlaid by an differential AC signal at a typical frequen-
cy of 147 kHz. The AC signal represents the internal off-
set voltages of amplifiers and hall plates, that are in-
fluenced by mechanical stress and temperature cycling.
magnetic field, V is the difference of the Hall voltage
24
(V ) and V
H
.
Offs
V
24
= V
V
H – Offs
The output shows in the first cycle the sum of the Hall
voltage and the offset, in the second the difference of
both. The difference of the mean values of V
and
OUT1
V
(V
) is equivalent to V
OUTDIF
.
OUT2
Hall
V
for Bu0 mT
V
OUT1
Note: The numbers do not
represent pin numbers.
I
C
1
V
OUTDIF/2
V
CM
2
1
V
V
Offs
OUTDIF
4
V
V
OUTAC
OUTDIF/2
V
Offs
I
C
2
3
4
V
OUT2
1/f = 6.7 µs
CH
3
V
V
t
a) Offset Voltage
b) Switched Current Supply
c) Output Voltage
Fig. 3: Hall Offset Compensation
ITT Semiconductors
3
HAL400
PRELIMINARY DATA SHEET
Outline Dimensions
+0.1
4.5
sensitive area
2.25
+0.05
0.1
position of hall sensor
referenced to the
center of package
x = 0 ± 0.1 mm
1.7
0.7
4
0.95
y = 0.3 ± 0.1 mm
(0.37 mm x 0.17 mm)
+0.2
3.1
+0.1
2.5
4.0 ±0.25
1
2
3
0.4
0.4
+0.1
1.5
0.4
top view
1.5
3.0
branded side
10°
max. 0.05
–0.05
10°
Fig. 4: Plastic Package SOT-89A
Weight approximately 0.04 g
Dimensions in mm
Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
–15
Max.
Unit
V
V
DD
Supply Voltage
1
1
12
1)
1)
1)
I
Supply Current through
Protection Device
–400
400
mA
DDZ
I
I
Output Current
2, 3
1
–5
5
mA
mA
OUT
1)
Output Current through
Protection Device
–300
300
OUTZ
T
T
Storage Temperature Range
Junction Temperature Range
–65
150
150
°C
S
J
–40
–40
°C
°C
2)
170
1)
2)
tv2 ms
tt1000 h
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
4
ITT Semiconductors
HAL400
PRELIMINARY DATA SHEET
Recommended Operating Conditions
Symbol
Parameter
Pin No.
2, 3
Min.
–2.25
–1
Max.
2.25
1
Unit
mA
mA
nF
Remarks
T = 25 °C
I
Continuous Output Current
Continuous Output Current
Load Capacitance
OUT
OUT
J
I
2, 3
T = 170 °C
J
C
2, 3
–
1
L
V
DD
power dissipation limit
12 V
8.0 V
6.8 V
4.8 V
4.5 V
min. V
DD
for specified
sensitivity
–40 °C
150 °C T
A
25 °C
125 °C
Fig. 5: Recommended Operating Supply Voltage
Extended Operational Range
Within the extended operating range, the ICs operate as mentioned in the functional description. The functionality has
been tested on samples, whereby the characteristics may lie outside the specified limits.
Symbol
Parameter
Pin No.
Min.
4.3
–3
Max.
12
Unit
V
Remarks
V
DD
Supply Voltage
Output Current
1
I
2,3
3
mA
T = –40 °C to +170 °C
J
OUT
ITT Semiconductors
5
HAL400
PRELIMINARY DATA SHEET
Electrical and Magnetic Characteristics
see Fig. 5 for T and V as not otherwise specified; Typical characteristics for T = 25 °C, –75 mT < B < 75 mT and
A
DD
J
V
DD
= 6.8 V
Symbol
Parameter
Pin No.
Min.
11.8
9.3
Typ.
14.5
14.5
Max.
17.1
18.5
Unit
mA
mA
Test Conditions
T = 25 °C; I
I
I
Supply Current
1
1
= 0 mA
OUT1,2
DD
J
Supply Current under Recom-
mended Operating Conditions
I
= 0 mA
DD
OUT1,2
V
Common Mode Output Voltage
Common Mode Rejection Ratio
2, 3
2, 3
2.1
–2
2.2
0
2.3
2
V
I
V
= 0 mA
CM
OUT1,2
= (V
+ V
) / 2
OUT2
CM
OUT1
CMRR
mV/V
I
= 0 mA
OUT1,2
CMRR is limited by the influ-
ence of power dissipation
S
Differential Magnetic Sensitivity
2–3
2–3
37
33
42.5
42.5
49.5
49.5
mV/mT
mV/mT
B = ±60 mT ; T = 25 °C
J
B =
∆V
/∆B
V
= V
– V
OUTDIF
OUTDIF
OUT1
OUT2
S
B
Differential Magnetic Sensitivity
under Recommended Operating
Conditions
B = ±60 mT
= V
V
– V
OUTDIF
OUT1
OUT2
B
Magnetic Offset
2–3
2–3
–1.0
–1.25
–15
–0.2
–0.2
0
1.0
1.25
15
mT
B = 0 mT, I
T = 25 °C
J
= 0 mA
= 0 mA
= 0 mA
offset
OUT1,2
OUT1,2
OUT1,2
B
offset
Magnetic Offset over Tempera-
ture
mT
B = 0 mT, I
∆B
∆T
/
Magnetic Offset Change due to
T
A
µT/K
B = 0 mT, I
OFFSET
1)
BW
Bandwidth (–3 dB)
2–3
2–3
–
–
10
–
1
kHz
%
NL
Non Linearity of Differential Out-
put
0.2
B = ±40 mT, B = ±60 mT
dif
NL
Non Linearity of Single Ended
Output
2, 3
–
2
3
%
single
f
f
Chopper Frequency
2, 3
2, 3
2, 3
114
90
0
147
147
0.32
166
166
0.8
kHz
kHz
V
T = 25 °C
J
CH
Chopper Frequency over Temp.
CH
V
Peak-to-Peak AC Output
Voltage
OUTACpp
n
Magnetic RMS Differential
Broadband Noise
2–3
2–3
2–3
2, 3
2, 3
–
–
–
0
0
–
10
–
µT
Hz
Hz
Ω
BW = 10 Hz to 10 kHz
B = 0 mT
meff
f
f
Corner Frequency
of 1/f Noise
10
Cflicker
Corner Frequency
of 1/f Noise
100
30
B = 65 mT
Cflicker
R
R
R
Output Resistance
50
I
V
v2.5 mA ; T = 25 °C
= 6.8 V
OUT
OUT
thJSB
OUT1,2
J
DD
Output Resistance
over Temperature
30
150
200
Ω
I
v2.5 mA
OUT1,2
Thermal Resistance Junction to
Substrate Backside
150
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm
pad size see Fig. 6
case
1)
with external 2 pole filter (f
= 5 kHz), V
is reduced to less than 1 mV
OUTAC
3db
6
ITT Semiconductors
HAL400
PRELIMINARY DATA SHEET
Typical output voltages versus
magnetic flux density
Typical differential output offset
voltage versus supply voltage
Parameter = TA
V
V
HAL400
HAL400
5
0.05
T
A
= 25 °C
B = 0 mT
V
DD
= 6.8 V
0.04
0.03
0.02
0.01
0.00
V
OUT1
V
OUT2
T = –40 °C
A
V
OFFS
4
3
2
1
0
T = 25 °C
A
V
V
OUT2
OUT1
T = 125 °C
A
T = 150 °C
A
–0.01
–0.02
–0.03
–0.04
–0.05
–150 –100 –50
0
50
100 150mT
2
4
6
8
10
12
14 V
B
V
DD
Typical magnetic offset of
differential output versus
supply voltage
Typical magnetic offset of
differential output versus
ambient temperature
Parameter = VDD
Parameter = TA
mT
mT
2.5
HAL400
HAL400
2.5
T = –40 °C
A
V
DD
= 4.8 V
B = 0 mT
B = 0 mT
T = 25 °C
2.0
A
2.0
V
V
= 6.0 V
= 12 V
DD
T = 125 °C
A
B
OFFS
B
OFFS
DD
1.5
1.5
1.0
T = 150 °C
A
B
OFFSmax
B
V
for
= 6.8V
OFFSmax
DD
1.0
0.5
0.5
0.0
0.0
–0.5
–1.0
–1.5
–2.0
–2.5
–0.5
–1.0
–1.5
–2.0
–2.5
B
B
for
OFFSmin
OFFSmin
V
DD
= 6.8 V
2
4
6
8
10
12
14 V
–50 –25
0
25 50 75 100 125 150°C
V
DD
T
A
ITT Semiconductors
7
HAL400
PRELIMINARY DATA SHEET
Typical differential sensitivity
Typical differential sensitivity
versus supply voltage
Parameter = TA
versus ambient temperature
Parameter = VDD
mV/mT
mV/mT
HAL400
HAL400
50
40
30
20
10
0
50
45
40
35
30
25
20
15
10
5
B = ±50 mT
B = ±50 mT
S
BDiff
S
BDiff
V
= 4.8 V
DD
V
V
= 6.0 V
= 12 V
DD
T
= –40 °C
A
T
= 25 °C
= 125 °C
= 150 °C
A
DD
T
A
T
A
0
3
5
7
9
11
13 V
–50 –25
0
25 50 75 100 125 150°C
V
DD
T
A
Typical nonlinearity of
Typical nonlinearity of
differential output versus
magnetic flux density
Parameter = VDD
differential output versus
magnetic flux density
Parameter = TA
%
%
HAL400
HAL400
= 6.8 V
1.5
1.5
T = 25 °C
A
V
DD
1.0
0.5
1.0
0.5
NL
NL
dif
dif
0.0
0.0
V
= 4.8 V
–0.5
–1.0
–1.5
–0.5
–1.0
–1.5
DD
V
V
= 6.0 V
= 12 V
DD
T
A
= –40 °C
T = 25 °C
A
DD
T = 125 °C
A
T = 150 °C
A
–80 –60 –40 –20
0
20 40 60 80 mT
B
–80 –60 –40 –20
0
20 40 60 80 mT
B
8
ITT Semiconductors
HAL400
PRELIMINARY DATA SHEET
Typical single endend
Typical nonlinearity of single
nonlinearity versus magnetic
flux density, Parameter = VDD
ended output versus magnetic flux
density, Parameter = TA
mT
3
%
HAL400
HAL400
3
T = 25 °C
A
V
DD
= 6.0 V
2
1
2
NL
NL
dif
sing
1
0
0
–1
–2
–3
–1
–2
–3
V
V
= 4.8 V
DD
T = –40 °C
A
= 12 V
T = 25 °C
A
DD
T = 125 °C
A
T = 150 °C
A
–80 –60 –40 –20
0
20 40 60 80 mT
–80 –60 –40 –20
0
20 40 60 80 mT
B
B
Typical chopper frequency
versus supply voltage
Parameter = TA
Typical chopper frequency
versus ambient temperature
Parameter = VDD
kHz
200
kHz
HAL400
HAL400
200
180
160
140
120
100
80
180
160
140
120
100
80
f
f
CH
CH
V
DD
= 4.8 V
V
V
= 6.0 V
= 12 V
DD
T = –40 °C
A
60
60
T = 25 °C
A
DD
T = 125 °C
A
40
40
T = 150 °C
A
20
20
0
0
3
4
5
6
7
8
9
10 11 12 13 V
–50 –25
0
25 50 75 100 125 150°C
V
DD
T
A
ITT Semiconductors
9
HAL400
PRELIMINARY DATA SHEET
Typical common mode output
Typical common mode output
voltage versus supply voltage
Parameter = TA
voltage versus ambient
temperature Parameter = VDD
V
V
HAL400
HAL400
2.5
2.26
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
2.25
2.24
2.23
2.22
2.21
2.20
2.19
2.18
2.17
2.16
2.15
2.14
V
CM
V
CM
V
= 4.8 V
= 12 V
DD
T = –40 °C
A
T = 25 °C
A
V
DD
T = 150 °C
A
2
4
6
8
10
12
14 V
–50 –25
0
25 50 75 100 125 150°C
V
DD
T
A
Typical output AC voltage
versus supply voltage
Typical output AC voltage versus
ambient temperature
Parameter = VDD
mV
mV
PP
HAL400
HAL400
500
500
400
300
200
100
0
T = 25 °C
A
V
V
V
V
OUT1pp,
OUT2pp
OUT1pp,
OUT2pp
400
300
200
100
0
V
= 4.8 V
DD
V
V
= 6.0 V
= 12 V
DD
DD
2
4
6
8
10
12
14 V
–50 –25
0
25 50 75 100 125 150°C
V
DD
T
A
10
ITT Semiconductors
HAL400
PRELIMINARY DATA SHEET
Typical supply current versus
Typical supply current versus
supply voltage
Parameter = TA
supply voltage
Parameter = TA
mA
25
mA
20
HAL400
HAL400
I
= 0 mA
I
= 0 mA
OUT1,2
OUT1,2
20
15
10
5
I
I
DD
DD
15
10
5
0
–5
T = –40 °C
A
–10
T = 25 °C
A
T = –40 °C
A
T = 125 °C
A
–15
–20
–25
T = 25 °C
A
T = 150 °C
A
T = 125 °C
A
T = 150 °C
A
0
–15 –10
–5
0
5
10
15 V
2
4
6
8
10
12
14 V
V
DD
V
DD
Typical supply current versus
temperature
Parameter = TA
Typical supply current versus
output current
Parameter = VDD
mA
mA
25
HAL400
HAL400
20
15
10
5
B = 0 mT
B = 0 mT
I
I
DD
DD
20
15
10
5
V
= 4.8 V
DD
V
= 4.8 V
DD
V
DD
= 12 V
V
V
= 6.0 V
= 12 V
DD
DD
0
0
–50 –25
0
25 50 75 100 125 150°C
–6
–4
–2
0
2
4
6 mA
T
A
I
OUT1,2
ITT Semiconductors
11
HAL400
PRELIMINARY DATA SHEET
Typical dynamic differential
Typical magnetic noise spectrum
output resistance versus
temperature
Parameter = TA
Ǹ
Ω
dBT rms ń Hz
HAL400
HAL400
200
–100
B = 0 mT
T
A
= 25 °C
180
160
140
120
100
80
V
= 4.8 V
B = 0 mT
R
n
meff
DD
OUT
–110
–120
–130
–140
–150
V
V
= 6.0 V
= 12 V
B = 65 mT
DD
DD
60
40
Ǹ
83 nT ń Hz
20
0
–50 –25
0
25 50 75 100 125 150°C
01 1.0 10.0 100.01000.1000001.0000010.000000.0
Hz
0.1 1
10 100 1k 10k 100k 1M
T
A
f
5.0
Typical magnetic frequency
response
2.0
dB
20
HAL400
T
A
= 25 °C
0 dB = 42.5 mV/mT
2.0
10
0
s
B
1.0
Fig. 6: Recommended pad size SOT-89A
Dimensions in mm
–10
–20
–30
–40
1
10
100
1 k
10 k 100 k
f
B
12
ITT Semiconductors
HAL400
PRELIMINARY DATA SHEET
Application Circuits
The normal integrating characteristics of a voltmeter is
sufficient for signal filtering.
Display the difference between channel 1 and channel
2 to show the Hall voltage. Capacitors 4.7 nF and 330 pF
for electromagnetic immunity are recommended.
V
CC
V
SUP
1
4.7n
1
47 n
330 p
V
SUP
V
DD
Voltage
Meter
Oscillo-
scope
HAL 400
OUT1
HAL 400
OUT1
2
3
2
High
Ch1
3.3 k
6.8 n
3.3 k
1 k
1 k
3
OUT2
Low
OUT2
Ch2
47 n
330 p
GND
GND
4
4
Do not connect OUT1 or OUT2 to Ground.
Do not connect OUT1 or OUT2 to Ground.
Fig. 7: Flux density measurement with voltmeter
Fig. 8: Filtering of output signals
V
CC
V
SUP
1.33 C
4.7n
1
330 p
V
DD
R+∆R
HAL 400
OUT1
0.75 R
ADC
1.5 R
R
2
–
0.22 R
CMOS
OPV
+
3
OUT2
330 p
4.4 C
3 C
R–∆R
GND
4
Do not connect OUT1 or OUT2 to Ground.
Fig. 9: Differential HAL400 output to single-ended output
R = 10 kΩ, C = 7.5 nF, ∆R for offset adjustment, BW
= 1.3 kHz
–3dB
ITT Semiconductors
13
HAL400
PRELIMINARY DATA SHEET
VCCy6 V
V
SUP
2.2 n
4.7 n
1
330 p
V
DD
4.7 k
HAL 400
OUT1
1 n
2
4.7 k
–
4.7 k
4.7 k
CMOS
OPV
+
–
3
4.7 k
3.0 k
8.2 n
CMOS
OPV
+
OUT2
OUT
4.7 k
330 p
4.7 n
GND
4
Do not connect OUT1 or OUT2 to Ground.
VEEx*6 V
Fig. 10: Differential HAL400 output to single-ended output (referenced to ground), filter – BW
= 14.7 kHz
–3dB
14
ITT Semiconductors
HAL400
PRELIMINARY DATA SHEET
ITT Semiconductors
15
HAL400
PRELIMINARY DATA SHEET
HAL400 Documentation History
1. Preliminary data sheet: “HAL400 Linear Hall Effect
Sensor IC”, March 29, 1994, 6251-346-1PD. First re-
lease of the preliminary data sheet.
2. Preliminary data sheet: “HAL400 Linear Hall Effect
Sensor IC”, Aug. 1, 1995, 6251-346-2PD. Second re-
lease of the preliminary data sheet.
Major changes:
– Marking code
3. Preliminary data sheet: “HAL400 Linear Hall Effect
Sensor IC”, Jan. 23, 1997, 6251-346-3PD. Third release
of the preliminary data sheet.
Major changes:
– Electrical and Magnetic Characteristics
– diagram: Typical output voltages versus magnetic flux
density
ITT Semiconductors Group
World Headquarters
INTERMETALL
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Reprinting is generally permitted, indicating the source. How-
ever, our consent must be obtained in all cases. Information
furnished by ITT is believed to be accurate and reliable. How-
ever, no responsibility is assumed by ITT for its use; nor for any
infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or
otherwiseunderanypatentorpatentrightsofITT. Theinforma-
tion and suggestions are given without obligation and cannot
give rise to any liability; they do not indicate the availability of
the components mentioned. Delivery of development samples
doesnotimplyanyobligationofITTtosupplylargeramountsof
such units to a fixed term. To this effect, only written confirma-
tion of orders will be binding.
Fax +49-761-517-2174
Printed in Germany
by Systemdruck+Verlags-GmbH, Freiburg (1/97)
Order No. 6251-346-3PD
16
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