20N60B [IXYS]
HiPerFAST IGBT; HiPerFAST IGBT
| 型号： | 20N60B |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT |
| 文件： | 总4页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
VCES
IC25
= 600 V
= 40 A
IXGH 20N60B
IXGT 20N60B
VCE(sat)typ = 1.7 V
tfi(typ)
= 100 ns
Preliminary data sheet
Symbol
TestConditions
MaximumRatings
TO-268 (D3) (IXGT)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
600
600
V
V
G
(TAB)
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
40
20
80
A
A
A
TO-247 AD (IXGH)
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 100 mH
ICM = 40
@ 0.8 VCES
A
TAB)
G
PC
TC = 25°C
150
W
C
E
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
MaximumLeadandTabtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Features
• Internationalstandardpackages
JEDEC TO-268 surface
Md
Mountingtorque, TO-247AD
1.13/10 Nm/lb.in.
mountable and JEDEC TO-247 AD
• Highcurrenthandlingcapability
• Latest generation HDMOSTM process
• MOS Gate turn-on
Weight
TO-247
TO-268
6
4
g
g
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switched-modeandresonant-mode
powersupplies
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
IC = 250mA, VGE = 0 V
IC = 250 mA, VCE = VGE
600
2.5
V
V
Advantages
• Space savings (two devices in one
package)
5.0
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200 mA
mA
• High power density
1
• Suitableforsurfacemounting
• Switching speed for high frequency
applications
• Easy to mount with 1 screw,TO-247
(isolatedmountingscrewhole)
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
2.0
VCE(sat)
IC = IC90, VGE = 15 V
1.7
V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
96533B(7/99)
1 - 4
IXGH 20N60B
IXGT 20N60B
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
9
17
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
1500
175
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
90
11
30
nC
nC
nC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
td(on)
tri
Eon
td(off)
tfi
15
35
0.15
150
100
0.7
ns
ns
mJ
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
200 ns
150 ns
1.0 mJ
Dim. Millimeter
Inches
Min. Max. Min. Max.
Eoff
Note 1
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
td(on)
tri
Eon
td(off)
tfi
15
35
0.15
220
140
ns
ns
mJ
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 10 W
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
ns
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
Note 1
Eoff
1.2
mJ
J
K
1.0
1.4 0.040 0.055
RthJC
RthCK
0.83 K/W
K/W
10.8 11.0 0.426 0.433
0.25
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Note 1: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
N
1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Min. Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGH 20N60B
IXGT 20N60B
200
160
120
80
100
80
60
40
20
0
TJ = 25°C
VGE = 15V
VGE = 15V
TJ = 25°C
13V
11V
13V
9V
7V
11V
9V
7V
40
5V
5V
0
0
2
4
6
8
10
0
1
2
3
4
5
VCE - Volts
Fig. 2. Extended Output Characteristics
VCE - Volts
Fig. 1. Output Characteristics
1.75
100
80
60
40
20
0
VGE = 15V
VGE = 15V
TJ = 125°C
IC = 40A
13V
11V
1.50
1.25
1.00
0.75
0.50
9V
IC = 20A
7V
5V
IC = 10A
25
50
75
100
125
150
0
1
2
3
4
5
VCE - Volts
TJ - Degrees C
Fig. 4. Temperature Dependence of VCE(sat)
Fig. 3. High Temperature Output Characteristics
100
4000
VCE = 10V
f = 1Mhz
C
C
iss
80
60
40
20
0
1000
100
10
oss
TJ =125°C
C
rss
TJ = 25°C
3
4
5
6
7
8
9
10
0
5
10 15 20 25 30 35 40
VCE-Volts
VGE - Volts
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves
© 2000 IXYS All rights reserved
3 - 4
IXGH 20N60B
IXGT 20N60B
4
3
2
1
0
8
6
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 125°C
TJ = 125°C
RG = 10
IC =40A
6
E(OFF)
E(ON)
4
E(ON)
IC = 20A
IC = 10A
E(ON)
E(ON)
E(OFF)
2
E(OFF)
E(OFF)
0
60
0
10
20
30
40
50
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig. 7. Dependence of EON and EOFF on IC.
Fig. 8. Dependence of EON and EOFF on RG.
15
100
IC = 20A
VCE = 300V
40
12
9
10
1
TJ = -55 to +125°C
RG = 4.7
dV/dt < 5V/ns
6
3
0
0.1
0
20
40
60
80
100
0
100
200
VCE - Volts
Fig. 10. Turn-off Safe Operating Area
300
400
500
600
Qg - nanocoulombs
Fig. 9. Gate Charge
1
D=0.5
D=0.2
0.1
0.01
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
0.0001
D = Duty Cycle
0.001
0.00001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. IGBT Transient Thermal Resistance Junction-to-Case
© 2000 IXYS All rights reserved
4 - 4
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