20N60G-T3P-T [UTC]

20A, 600V N-CHANNEL POWER MOSFET; 20A ， 600V N沟道功率MOSFET


型号：	20N60G-T3P-T
厂家：	Unisonic Technologies
描述：	20A, 600V N-CHANNEL POWER MOSFET 20A ， 600V N沟道功率MOSFET
文件：	总3页 (文件大小：171K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

20N60

Power MOSFET

20A, 600V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC 20N60 is an N-channel enhancement mode power

MOSFET using UTC’s advanced technology to provide customers

with planar stripe and DMOS technology. This technology is

specialized in allowing a minimum on-state resistance and superior

switching performance. It also can withstand high energy pulse in

the avalanche and commutation mode.

The UTC 20N60 is universally applied in motor control, UPS, DC

choppers and switch-mode and resonant-mode power supplies.

FEATURES

* R_DS(ON)= 0.45Ω @V_GS= 10V

* High switching speed

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

Tube

20N60L-T3P-T

20N60L-T47-T

20N60G-T3P-T

20N60G-T47-T

TO-3P

TO-247

Note: Pin Assignment: G: Gate D: Drain

S: Source

www.unisonic.com.tw

1 of 3

QW-R502-587.E

20N60

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C=25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous

Pulsed

Drain Current

I_DM

Avalanche Energy

Power Dissipation

Single Pulsed(Note 2)

TO-3P

E_AS

1200

300

P_D

TO-247

370

Junction Temperature

Storage Temperature

T_J

+150

-55~+150

°C

T_STG

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. V_DD=50V, Starting T_J=25°С, Peak I_AS=20A, L=6mH

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

0.42

UNIT

TO-3P

TO-247

Junction to Case

θ_JC

°С/ W

0.34

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSSI_D=250µA, V_GS=0V

I_DSSV_DS=600V, V_GS=0V

_GS=+20V, V_DS=0V

V_GS=-20V, V_DS=0V

600

10 µA

+100 nA

-100 nA

Forward

Gate- Source Leakage Current

I_GSS

Reverse

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)V_DS=V_GS, I_D=250µA

4.0

V_GS=10V, I_D=10A, Pulse test,

t≤300µs, duty cycle d≤2%

Static Drain-Source On-State Resistance

R_DS(ON)

0.32 0.45

Ω

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

4500

420

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

V_GS=0V, V_DS=25V, f=1MHz

140

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

150 170 nC

V_GS=10V, V_DS=300V, I_D=10A

(Note 1, 2)

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

40 nC

85 nC

V_GS=10V, V_DS=300V, I_D=10A,R_G=2Ω,

(Note 1, 2)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous

Current

I_S

I_SM

V_SD

t_rr

V_GS=0V

Maximum Body-Diode Pulsed Current

Repetitive

I_F=I_S, V_GS=0V, Pulse test,

t≤300µs, duty cycle d≤2%

I_F=I_S,V_R=100V,-di/dt=100A/µs(Note 1)

Drain-Source Diode Forward Voltage

1.5

Body Diode Reverse Recovery Time

600

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R502-587.E

www.unisonic.com.tw

20N60

Power MOSFET

TYPICAL CHARACTERISTICS

Drain-Source On-State Resistance

Characteristics

V_GS=10V, I_D=14A

V_GS=10V, I_D=20A

V_GS=10V, I_D=10A

Drain to Source Voltage, V_DS(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

3 of 3

QW-R502-587.E

www.unisonic.com.tw

相关型号：