DPG60B600LB [IXYS]

High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge;


型号：	DPG60B600LB
厂家：	IXYS CORPORATION
描述：	High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge
文件：	总5页 (文件大小：202K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DPG60B600LB

V_RRM

I_DAV

t_rr

600V

60A

HiPerFRED

40ns

High Performance Fast Recovery Diode

Low Loss and Soft Recovery

1~ Rectifier Bridge

Part number

DPG60B600LB

Backside: isolated

8 = n/c

SMPD

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Rectifiers in switch mode power

supplies (SMPS)

● Isolation Voltage:

● Industry convenient outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Soldering pins for PCB mounting

● Backside: DCB ceramic

● Reduced weight

3000

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

● Advanced power cycling

- Power dissipation within the diode

- Turn-on loss in the commutating switch

Terms Conditions of usage:

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and

the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The

information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns

the specific application of your product, please contact your local sales office.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.

Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend

- to perform joint risk and quality assessments;

- the conclusion of quality agreements;

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20140108a

DPG60B600LB

Ratings

Fast Diode

Symbol

V_RSM

Definition

Conditions

min. typ. max. Unit

T_VJ= 25°C

T_VJ= 150°C

T_VJ= 25°C

600

250

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

V_RRM

I_R

reverse current, drain current

V_R= 600 V

µA

V_R= 600 V

I_F= 30 A

I_F= 60 A

I_F= 30 A

I_F= 60 A

T_C= 125°C

rectangular

forward voltage drop

2.51

3.19

1.59

2.21

V_F

T_VJ

°C

150

bridge output current

threshold voltage

T_VJ= 175°C

I_DAV

d = 0.5

0.85

V_F0

r_F

for power loss calculation only

slope resistance

17 mΩ

1.1 K/W

K/W

thermal resistance junction to case

thermal resistance case to heatsink

R_thJC

R_thCH

P_tot

I_FSM

C_J

0.40

T_C= 25°C

T_VJ= 45°C

T_VJ= 25°C

135

250

total power dissipation

max. forward surge current

junction capacitance

t = 10 ms; (50 Hz), sine; V_R= 0 V

V_R= 300V f = 1 MHz

5.5

max. reverse recovery current

I_RM

T_VJ= 25°C

T_VJ= 125°C

T_VJ= 25°C

T_VJ= 125°C

I_F= 30 A; V_R= 300 V

reverse recovery time

/dt = 400A/µs

-di_F

t_rr

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20140108a

DPG60B600LB

Ratings

Package SMPD

Symbol

I_RMS

Definition

Conditions

per terminal

min. typ. max. Unit

175

150

°C

RMS current

-55

T_VJ

virtual junction temperature

T_op

operation temperature

storage temperature

T_stg

8.5

Weight

1.6

130

F_C

mounting force with clip

terminal to terminal

terminal to backside

d_Spp/App

d_Spb/Apb

creepage distance on surface | striking distance through air

4.0

t = 1 second

3000

2500

isolation voltage

ISOL

50/60 Hz, RMS; I_ISOL≤ 1 mA

t = 1 minute

UL Logo

Part description

D = Diode

P = HiPerFRED

Backside DCB

G = extreme fast

60 = Current Rating [A]

B = 1~ Rectifier Bridge

600 = Reverse Voltage [V]

LB = SMPD-B

Part number

Date code

XXXXXXXXXX

yywwA

Assembly line

Data Matrix Code

Digits

1 to 19: Part #

20 to 23: Date Code

24 to 25: Assembly line

26 to 31: Lot #

32: Split Lot

33 to 36: Individual #

Pin 1 identifier

Ordering

Ordering Number

DPG60B600LB

Marking on Product

Delivery Mode

Blister

Quantity Code No.

Standard

DPG60B600LB

512859

512852

Alternative

DPG60B600LB-TRR

Tape & Reel

200

T_VJ= 175°C

Equivalent Circuits for Simulation

* on die level

Fast

V₀

R₀

Diode

0.85

threshold voltage

slope resistance *

V_{0 max}

R_{0 max}

mΩ

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20140108a

DPG60B600LB

Outlines SMPD

A ( 8 : 1 )

0,05

(6x) 1^`

+0,15

2°

0,1

0,2¹⁾

0,5`0,1

0,1

seating plane

`0,05

(3x) 2

0,1

0,05

3 2 1

Pin number

2,75

5,5

0,1

Notes:

1) potrusion may add 0.2 mm max. on each side

0,1

2) additional max. 0.05 mm per side by punching misalignement

or overlap of dam bar or bending compression

3) DCB area 10 to 50 µm convex;

position of DCB area in relation to plastic rim: ±25 µm

(measured 2 mm from Cu rim)

13,5`0,1

16,25`0,1

4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.)

cutting edges may be partially free of plating

0,1

8 = n/c

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20140108a

DPG60B600LB

Fast Diode

100

600

500

400

300

200

100

T_VJ= 100°C

V_R= 300 V

I_F= 60 A

I_F= 30 A

I_F= 15 A

T_VJ= 150°C

I_F= 60 A

I_F= 30 A

I_F= 15 A

I_RM

[A]

I_F

Q_r

T_VJ= 100°C

[A]

[μC]

T_VJ= 100°C

V_R= 300 V

T_VJ= 25°C

100

1000

200 400 600 800 1000

V_F[V]

-di_F/dt [A/μs]

Fig. 1 Forward current

I_Fversus V_F

Fig. 2 Typ. reverse recov. charge

Q_rversus -di_F/dt

Fig. 3 Typ. peak reverse current

I_RMversus -di_F/dt

2.0

1.5

1.0

0.5

0.0

140

0.30

T_VJ= 100°C

I_F= 30 A

T_VJ= 100°C

V_R= 300 V

0.25

0.20

120

100

I_F= 60 A

I_F= 30 A

I_F= 15 A

V_FR

[V]

t_fr

t_rr

K_f

0.15

[μs]

[ns]

0.10

0.05

0.00

t_fr

I_RM

V_FR

Q_r

120

160

200 400 600 800 1000

T_VJ[°C]

-di_F/dt [A/μs]

Fig. 4 Dynamic parameters

Q_r, I_RMversus T_VJ

Fig. 5 Typ. recovery time

t_rrversus -di_F/dt

Fig. 6 Typ. peak forward voltage

V_FRand t_frversus di_F/dt

Z_thJC

0.1

Constants for Z_thJCcalculation:

[K/W]

R_thi(K/W)

t_i(s)

0.01

0.465

0.179

0.256

0.0052

0.0003

0.0396

0.001

0.00001

0.0001

0.001

0.01

0.1

t [s]

Fig. 7 Transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20140108a

DPG60B600LB [IXYS]

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