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DS9-12F [IXYS]

Rectifier Diode Avalanche Diode; 整流二极管雪崩二极管
DS9-12F
型号： DS9-12F
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Rectifier Diode Avalanche Diode
整流二极管雪崩二极管

整流二极管 局域网
文件： 总2页 (文件大小：49K)
中文：  中文翻译
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DS 9  
DSA 9  
VRRM = 800-1800 V  
IF(RMS) = 18 A  
IF(AV)M = 11 A  
Rectifier Diode  
Avalanche Diode  
DO-203 AA  
VRSM  
V
V(BR)min ① VRRM  
Standard  
Types  
Avalanche  
Types  
A
C
C
V
V
900  
800  
1200  
1600  
1800  
DS9-08F  
DS9-12F  
1300  
1700  
1900  
1300  
1750  
1950  
DSA9-12F  
DSA9-16F  
DSA9-18F  
A
M5  
① Only for Avalanche Diodes  
A = Anode C = Cathode  
Symbol  
Test Conditions  
TVJ = TVJM  
Tcase = 150°C; 180° sine  
Maximum Ratings  
Features  
International standard package,  
①
IF(RMS)  
IF(AVM)  
18  
11  
A
A
JEDEC DO-203 AA  
Planar glassivated chips  
①
PRSM  
IFSM  
DSA types, TVJ = TVJM, tp = 10 ms  
4.5  
kW  
Applications  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
250  
265  
A
A
①
Supplies for DC power equipment  
DC supply for PWM inverter  
Field supply for DC motors  
①
①
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
200  
220  
A
A
①
Battery DC power supplies  
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
310  
295  
A2s  
A2s  
A2s  
A2s  
Advantages  
①
Space and weight savings  
Simple mounting  
①
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
200  
190  
①
Improved temperature and power  
cycling  
Reduced protection circuits  
TVJ  
TVJM  
Tstg  
-40...+180  
180  
-40...+180  
°C  
°C  
°C  
①
Md  
Mounting torque  
2.2-2.8  
19-25  
5
Nm  
lb.in.  
g
Weight  
Dimensions in mm (1 mm = 0.0394")  
Symbol  
Test Conditions  
Characteristic Values  
IR  
TVJ = TVJM; VR = VRRM  
IF = 36 A; TVJ = 25°C  
£
£
3
mA  
V
VF  
1.4  
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
0.85  
15  
V
mW  
RthJC  
RthJH  
DC current  
180° sine  
DC current  
2.0  
2.17  
3.0  
K/W  
K/W  
K/W  
dS  
dA  
a
Creepage distance on surface  
Strike distance through air  
Max. allowable acceleration  
2.0  
2.0  
100  
mm  
mm  
m/s2  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
1 - 2  
© 2000 IXYS All rights reserved  
DS 9  
DSA 9  
50  
A
300  
1000  
VR = 0 V  
2
8
A s  
A
typ. lim.  
250  
40  
50Hz, 80%VRRM  
600  
IFSM  
I2t  
TVJ = 45°C  
TVJ = 180°C  
IF  
200  
150  
100  
50  
400  
200  
100  
30  
20  
10  
0
TVJ= 180°C  
TVJ= 25°C  
TVJ=45°C  
TVJ=180°C  
0
10-3  
10-2  
10-1  
100 s  
t
101  
V
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.6  
1
2
3
4
5 6 7 10  
ms  
VF  
t
Fig. 1 Forward characteristics  
Fig. 2 Surge overload current  
FSM: crest value, t: duration  
Fig. 3 I2t versus time (1-10 ms)  
I
25  
W
25  
DC  
d = 180° sin  
d = 120°  
A
RthJA  
:
d =  
d =  
60°  
30°  
20  
PF  
20  
8.3 K/W  
IF(AV)M  
13 K/W  
(CU80x80)  
18 K/W  
15  
10  
5
15  
10  
5
DC  
180° sin  
120°  
60°  
30°  
0
0
0
20  
°C  
200  
0
5
10  
15  
A
50  
100  
150  
0
50  
100  
150  
200  
Tcase  
°C  
Tamb  
IF(AV)M  
Fig. 4 Power dissipation versus forward current and ambient temperature  
Fig. 5 Max. forward current at case  
temperature  
5
RthJH for various conduction angles d:  
30°  
K/W  
60°  
d
RthJH (K/W)  
4
120°  
180°  
DC  
DC  
180°  
120°  
60°  
3.0  
ZthJH  
3.35  
3.56  
4.0  
3
30°  
4.64  
2
1
0
Constants for ZthJH calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.095  
0.515  
1.39  
1.0  
0.00032  
0.0102  
0.360  
10-3  
10-2  
10-1  
100  
101  
102  
103  
t
104  
2.30  
s
Fig. 6 Transient thermal impedance junction to heatsink  
© 2000 IXYS All rights reserved  
2 - 2  

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