DSA240X200NA [IXYS]

Rectifier Diode, Schottky, 1 Phase, 2 Element, 120A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4;


型号：	DSA240X200NA
厂家：	IXYS CORPORATION
描述：	Rectifier Diode, Schottky, 1 Phase, 2 Element, 120A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4 软恢复二极管局域网测试
文件：	总4页 (文件大小：108K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DSA240X200NA

preliminary

V_RRM

I_FAV

V_F

200V

120A

0.87V

Schottky Diode Gen ²

High Performance Schottky Diode

Low Loss and Soft Recovery

Parallel legs

Part number

DSA240X200NA

Backside: isolated

SOT-227B (minibloc)

Features / Advantages:

Applications:

Package:

● Very low Vf

● Extremely low switching losses

● Low Irm values

● Improved thermal behaviour

● High reliability circuit operation

● Low voltage peaks for reduced

protection circuits

● Rectifiers in switch mode power

supplies (SMPS)

● Free wheeling diode in low voltage

converters

● Isolation Voltage:

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

3000

● Low noise switching

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20131031a

DSA240X200NA

preliminary

Ratings

Schottky

Conditions

Symbol

V_RSM

Definition

min. typ. max. Unit

T_VJ= 25°C

T_VJ= 125°C

T_VJ= 25°C

200

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

V_RRM

I_R

reverse current, drain current

V_R= 200 V

1.5 mA

15 mA

forward voltage drop

V_F

120

1.00

I_F=

1.26

0.87

1.17

120

I_F= 240 A

I_F= 120 A

I_F= 240 A

T_C= 95°C

rectangular

T_VJ

°C

125

average forward current

threshold voltage

T_VJ= 150°C

I_FAV

d = 0.5

V_F0

r_F

0.54

for power loss calculation only

slope resistance

2.5 mΩ

0.4 K/W

K/W

thermal resistance junction to case

thermal resistance case to heatsink

R_thJC

R_thCH

P_tot

0.10

902

T_C= 25°C

T_VJ= 45°C

T_VJ= 25°C

310

total power dissipation

max. forward surge current

junction capacitance

I_FSM

C_J

t = 10 ms; (50 Hz), sine; V_R= 0 V

V_R= 24 V f = 1 MHz

1.60

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20131031a

DSA240X200NA

preliminary

Ratings

Package SOT-227B (minibloc)

Symbol

I_RMS

Definition

Conditions

per terminal

min. typ. max.

150

Unit

RMS current

T_VJ

-40

150

125

150

°C

virtual junction temperature

operation temperature

storage temperature

T_op

T_stg

Weight

M_D

1.1

1.5 Nm

mounting torque

terminal torque

1.5 Nm

terminal to terminal

terminal to backside

d_Spp/App

d_Spb/Apb

10.5

8.6

3.2

creepage distance on surface | striking distance through air

6.8

t = 1 second

3000

2500

isolation voltage

ISOL

50/60 Hz, RMS; I_ISOL≤ 1 mA

t = 1 minute

Part number

Product Marking

D = Diode

Part No.

S = Schottky Diode

A = low VF

Logo

XXXXX

240 = Current Rating [A]

X = Parallel legs

Zyyww

abcd

200 = Reverse Voltage [V]

NA = SOT-227B (minibloc)

Assembly Line

DateCode

Assembly Code

Ordering

Standard

Part Number

Marking on Product

Delivery Mode

Tube

Quantity Code No.

10 511108

DSA240X200NA

Similar Part

Package

Voltage class

DSS2x101-02A

SOT-227B (minibloc)

200

T_VJ= 150°C

* on die level

Equivalent Circuits for Simulation

Schottky

V₀

R₀

threshold voltage

slope resistance *

V_{0 max}

R_{0 max}

0.54

0.6

mΩ

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20131031a

DSA240X200NA

preliminary

Outlines SOT-227B (minibloc)

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20131031a

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