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DWN347 [IXYS]

Rectifier Diodes & FRED; 整流二极管和FRED
DWN347
型号： DWN347
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Rectifier Diodes & FRED
整流二极管和FRED

整流二极管
文件： 总22页 (文件大小：765K)
中文：  中文翻译
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Page  
Contents  
Symbols and Definitions  
Nomenclature  
General Information  
Assembly Instructions  
2
2
3
4
5
FRED, Rectifier Diode and Thyristor Chips in Planar Design  
IGBT Chips  
VCES  
IC  
G-Series, Low VCE(sat) B2 Types  
G-Series, Fast C2 Types  
S-Series, SCSOA Capability, Fast Types  
E-Series, Improved NPT³ technology  
600 ...1200 V  
7 ... 20 A  
7 ... 20 A  
10 ... 20 A  
20 ... 150 A  
6
6
6
7
600 V  
600 V  
1200 ... 1700 V  
MOSFET Chips  
VDSS  
RDS(on)  
HiPerFETTM Power MOSFET  
70 ...1200 V  
55 ... 300 V  
-100 ...-600 V  
500 ...1000 V  
0.005 ... 4.5 Ω  
0.015 ... 0.135 Ω  
0.06 ... 1.2 Ω  
8-10  
11  
12  
PolarHTTM MOSFET, very Low RDS(on)  
P-Channel Power MOSFET  
N-Channel Depletion Mode MOSFET  
30 ... 110 Ω  
12  
Layouts  
13-17  
Bipolar Chips  
VRRM / VDRM  
IF(AV)M / IT(AV)M  
Rectifier Diodes  
FREDs  
1200 ... 1800 V  
600 ... 1200 V  
200 ... 1200 V  
600 ... 1800 V  
100 ... 600 V  
8 ... 200 V  
12 ... 416 A  
8 ... 244 A  
9 ... 148 A  
12 ... 150 A  
3.5 ... 25 A  
28 ... 145 A  
15 ... 540 A  
10 ... 26 A  
18-19  
20-21  
22-23  
24-25  
26-27  
28-31  
32-33  
34  
Low Leakage FREDs  
SONIC-FRDTM Diodes  
GaAs Schottky Diodes  
Schottky Diodes  
Phase Control Thyristors  
Fast Rectifier Diodes  
800 ... 2200 V  
1600 ... 1800 V  
Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates  
What is DCB/DAB?  
DCB Specification  
35  
36  
IXYS reserves the right to change limits, test conditions and dimensions  
1
Symbols and Definitions  
Nomenclature  
Cies  
Ciss  
-di/dt  
IC  
Input capacitance of IGBT  
IGBT and MOSFET Discrete  
Input capacitance of MOSFET  
Rate of decrease of forward current  
DC collector current  
IXSD 40N60A  
IX  
(Example)  
IXYS  
Die technology  
ID  
IF  
IF(AV)M  
IFSM  
IGT  
IR  
IRM  
IT  
IT(AV)M  
Drain current  
Forward current of diode  
Maximum average forward current at specified Th  
Peak one cycle surge forward current  
Gate trigger current  
E
F
G
S
T
NPT3 IGBT  
HiPerFETTM Power MOSFET  
Fast IGBT  
IGBT with SCSOA capability  
Standard Power MOSFET  
Unassembled chip (die)  
Reverse current  
D
Maximum peak recovery current  
Forward current of thyristor  
Maximum average on-state current of a thyristor  
at specified Th  
Maximum surge current of a thyristor  
Static drain-source on-state resistance  
Thermal resistance junction to case  
Slope resistance of a thyristor or diode  
(for power loss calculations)  
Case temperature  
40  
Current rating, 40 = 40 A  
N
P
N-channel type  
P-channel type  
60  
Voltage class, 60 = 600 V  
ITSM  
RDS(on)  
Rthjc  
rT  
xx  
MOSFET  
A
Prime RDS(on) for standard MOSFET  
Low gate charge die  
Low gate charge die, 2nd generation  
PolarHTTM Power MOSFET  
Linear Mode MOSFET  
IGBT  
No letter, low VCE(sat)  
Or A2, std speed type  
Or B2, high speed type  
Or C2, very high speed type  
Q
Q2  
P
Tcase  
Th  
tfi  
Heatsink temperature  
Current fall time with inductive load  
Junction temperature  
L
Tj, T(vj)  
--  
A
B
C
Tjm, T(vj)m Maximum junction temperature  
trr  
VCE(sat)  
VCES  
VDRM  
Reverse recovery time of a diode  
Collector-emitter saturation voltage  
Maximum collector-emitter voltage  
Maximum repetitive forward blocking  
voltage of thyristor  
Diode and Thyristor Chips  
C-DWEP 69-12  
(Diode Example)  
VDSS  
VF  
VR  
Drain-source break-down voltage  
Forward voltage of diode  
Reverse voltage  
Maximum peak reverse voltage of thyristor or  
diode  
C
D
Package type  
Chip function  
D = Silicon rectifier diode  
VRRM  
W
Unassembled chip  
VT  
VT0  
On-state voltage of thyristor  
Threshold voltage of thyristors or diodes (for  
power loss calculation only)  
EP  
Process designator  
EP = Epitaxial rectifier diode  
N
P
= Rectifier diode, cathode on top  
= Rectifier diode, anode on top  
FN = Fast Rectifier diode, cathode on top  
FP = Fast Rectifier diode, anode on top  
69  
Current rating value of one chip in A  
Voltage class, 12 = 1200 V  
-12  
Registration No.:  
001947 TS2/765/17557  
Registration No.:  
001947  
W-CWP 55-12/18  
(Thyristor Example)  
W
C
Package type  
Chip and DCB Ceramic Substrates Data book  
Edition 2004  
Chip function  
C = Silicon phase control thyristor  
Published by IXYS Semiconductor GmbH  
Marketing Communications  
Edisonstraße 15, D-68623 Lampertheim  
W
P
Unassembled chip  
Process designator  
P = Planar passivated chip  
cathode on top  
© IXYS Semiconductor GmbH  
All Rights reserved  
As far as patents or other rights of third parties are concerned, liability is only  
assumed for chips and DCB parts per se, not for applications, processes and  
circuits implemented with components or assemblies. Terms of delivery and the  
right to change design or specifications are reserved.  
55  
Current rating value of one chip in A  
12/18  
Voltage class, 12/18 = 1200 up to 1800 V  
© 2004 IXYS All rights reserved  
2
General Informations for Chips  
When mounting Power Semiconductor chips to a header, ceramic substrate or hybrid thick film circuit, the solder system and the chip  
attach process are very important to the reliability and performance of the final product. This brochure provides several guidelines  
that describe recommended chip attachment pro-cedures. These methods have been used successfully for many years at IXYS.  
Available forms of chip packings  
IXYS offers various options.  
Please order from one of the following possibilities:  
Packaging Options Delivery form  
C-...*  
T-...*  
W-...*  
Chips in tray (Waffle Pack);  
Chips in wafer, unsawed;  
Electrically tested  
Bipolar = 5" (125 mm∅) wafer; Electrically tested, rejects are inked  
Chips in wafer on foil, sawed; Bipolar = 5" (125 mm∅) wafer; Electrically tested, rejects are inked  
...* must be amended by the exact chip type designation.  
Packing, Storage and Handling  
Chips should be transported in their original containers. All chip transfer to other containers or for assembly should be done only with  
rubber-tipped vacuum pencils. Contact with human skin (or with a tool that has been touched by hand) leaves an oily residue that may  
adversely impact subsequent chip attach or reliability.  
At temperatures below 104°F (40°C), there is no limitation on storage time for chips in sealed original packages. Chips removed from  
original packages should be assembled immediately. The wetting ability of the contact metallization with solder can be preserved by  
storage in a clean and dry nitrogen atmosphere.  
The IGBT and MOSFET Chips are electrostatic discharge (ESD) sensitive. Normal ESD precautions for handling must be observed.  
Prior to chip attach, all testing and handling of the chips must be done at ESD safe work stations according to DIN IEC 47(CO) 701.  
Ionized air blowers are recommended for added ESD protection.  
Contamination of the chips degrades the assembly results.Finger prints, dust or oily deposits on the surface of the chips have to be  
absolutely avoided.  
Rough mechanical treatment can cause damage to the chip.  
Electrical Tests  
The electrical properties listed in the data sheet presume correctly assembled chips. Testing of non-assembled chips requires the  
following precautions:  
- High currents have to be supplied homogeneously to the whole metallized contact area.  
- Kelvin probes must be used to test voltages at high currents  
- Applying the full specified blocking or reverse voltage may cause arcing across the glass passivated junction termination, because  
the electrical field on top of the passivation glass causes ionization of the surrounding air. This phenomenon can be avoided by using  
inert fluids or by increasing the pressure of the gas surrounding the chip to values above 30 psig (2 bars).  
General Rules for Assembly  
The linear thermal expansion coefficient of silicon is very small compared to usual contact metals. If a large area metallized silicon  
chip is directly soldered to a metal like copper, enormous shear stress is caused by temperature changes (e.g. when cooling down from  
the solder temperature or by heating during working conditions) which can disrupt the solder mountdown.  
If it is found that larger chips are cracking during mountdown or in the application, then the use of a low thermal expansion coefficient  
buffer layer,e.g. tungsten,molybdenum or Trimetal®, for strain relief should be considered. An alternative solution is to soft-solder these  
larger chips to DCB ceramic substrates because of their matching thermal expansion coefficients.  
IXYS reserves the right to change limits, test conditions and dimensions  
3
Assembly Instructions  
MOS/IGBT Chips  
Recommended Solder System  
IXYS recommends a soft solder chip attach using a solder composition of 92.5 % Pb, 5 % Sn and 2.5 % Ag. The maximum chip attach  
temperature is 460°C for MOSFET and 360°C for HiPerFETTM and IGBT.  
Wire Bonding  
It is recommended to use wire of diameter not greater than 0.38 mm (0.015") for bonding to the source emitter and gate pads. Multiple  
wires should be used in place of thicker wire to handle high drain or emitter currents. See tables for number of recommended wire  
bonds. At smaller gate pads 0.15 mm is recommended.  
Thermal Response Testing  
To assure good chip attach processing, thermal response testing per MIL STD 750, Method 3161 or equivalent should be performed.  
Bipolar Chips  
Assembling  
IXYS bipolar semiconductor chips have a soft-solderable, multi-layer metallization (Ti/Ni/Ag) on the bottom side and, on top, either  
the same metallization scheme or an alumunium layer sufficiently thick for ultrasonic bonding. Note that the last layer of metal for  
soldering is pure silver.  
Regardless of their type all chips possess the same glass passivated junction termination system on top of the chip. For that reason  
they can be easily chip bonded or they can all be simply soldered to a flat contacting electrode in accordance to the General Rules on  
Page 3. All kinds of the usual soft solders with melting points below 660°F (350°C) can be used thanks to their pure silver top metal.  
Solders with high melting points are preferable due to their better power cycling capability, i.e. they are more resistant to thermal  
fatigue.  
Soldering temperature should not exceed 750°F (400°C). The maximum temperature should not be applied for more than five  
minutes.  
As already mentioned above the electrical properties quoted in the data sheets can only be obtained with properly assembled chips.  
This is only possible when all contact materials to be soldered together are well wetted and the solder is practically free of voids.  
A simple means to achieve good solder connections is to use a belt furnace running with a process gas containing at least 10 %  
Hydrogen in Nitrogen.  
Other approved methods are also allowed, provided that the above mentioned temperature-time-limits are not exceeded and  
temperature shocks above 930°F/min (500 K/min) are avoided.  
We do not recommend the use of fluxes for soldering!  
Ultrasonic Wire Bonding  
Chips provided with a thick aluminium layer are designed for ultrasonic wire bonding. Wire diameters up to 500 µm can be used  
dependent on chip types. Setting wires in parallel and application of stitch bonding lead to surge current ratings comparable to  
soldered chips.  
Coating  
Although the chips are glass passivated, they must be protected against arcing and environmental influences. The coating material  
that is in contact with the chip surface must have the following properties:  
- elasticity (to prevent mechanical stress)  
- high purity, no contamination with alkali metals  
- good adhesion to metals and glass passivation.  
© 2004 IXYS All rights reserved  
4
FRED, Rectifier Diode and Thyristor Chips in Planar Design  
Fast Recovery Epitaxial Diodes (FRED)  
Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling  
diodes. At increasing switching frequencies, the proper functioning and efficiency of the power switch, aside from conduction losses,  
is determined by the turn-off behavior of the diode (characterized by Qrr, IRM and trr - Fig. 1.  
The reverse current character-istic following the peak reverse current IRM is  
another very im-portant property. The slope of the decaying reverse current  
dirr/dt results from design para- meters (technology and dif-fusion of the  
FRED chip Fig. 2. In a circuit this current slope, in conjunction with parasitic  
induc-tances (e.g. connecting leads, causes over-voltage spikes and high  
frequency interference vol-tages.The higher the dirr/dt ("hard recovery" or  
"snap-off" behavior) the higher is the resulting additional stress for both the  
diode and the paralleled switch. A slow decay of the reverse current ("soft  
recovery" behavior), is the most desirable characteristic, and this is designed  
into all FRED. The wide range of available blocking voltages makes it  
possible to apply these FRED as output rectifiers in switch-mode power  
supplies (SMPS) as well as protective and free-wheeling diodes for power  
switches in inverters and welding power supplies.  
Fig. 1: Current and voltage during turn-on and  
turn-off switching of fast diodes  
Glasspassivation  
Rectifier Diode and Thyristor Chips  
Guard ring  
The figures 3 a-c show cross sectional views of the diode and thyristor  
Anode  
chips in the passivation area. All thyristor and diode chips (DWN, DWFN,  
CWP) are fabricated using separation diffusion processes so that all  
Epitaxy layer n-  
junctions terminate on the topside of the chip. Now the entire bottom  
surfaces of all chips are available for soldering onto a DCB or other ceramic  
substrate without a molybdenum strain buffer. The elimination of the strain  
buffer and its solder joint reduces thermal resistance and increases  
blocking voltage stability. The junction termination areas are passivated  
with glass, whose thermal expansion coefficient matches that of silicon. All  
silicon chips increasingly use planar technology with guard rings and  
channel stoppers to reduce electric fields on the chip surface.  
Substrate n+  
Cathode  
Metalization  
Fig. 2: Cross section of glassivated planar epitaxial  
diode chip with seperation diffusion (type DWEP)  
The contact areas of the chips have vapor deposited metal layers which  
contribute substantially to their high power cycle capability. All chips are  
processed on silicon wafers of 5" diameter and diced after a wafer sample  
test which auto-matically marks chips not meeting the electrical specification.  
The chip geometry is square or rectangular.  
Guard ring  
Glasspassivation  
Fig. 3a-c  
Cross sections of Chips in the passivation area  
a) Diode chip, type DWN, DWFN  
b) Diode chip, type DWP, DWFP  
c) Thyristor chip, type CWP  
p
n
Fig. 3b)  
n+  
Glasspassivation  
Metalization  
Glasspassivation  
Emitter  
Guard ring  
Channel-  
Fig. 3a)  
stopper  
Fig. 3c)  
Metalization  
Metalization  
IXYS reserves the right to change limits, test conditions and dimensions  
5
Rectifier Diodes  
1
Type  
IR  
VRRM  
TVJ M  
IF(AV)M  
rect. d = 0.5  
VF  
TVJ =  
IFSM  
Reverse Recovery  
@IF  
VRRM  
TVJM  
RthJC  
@IF  
IRM  
@-di/dt  
TC = 100°C  
A
typ.  
25°C  
V
125°C  
V
25°C; VR = 100 V  
A
V
typ. mA  
°C  
K/W  
A
A
A
A/µs  
800 -  
1200  
0.7  
0.7  
150  
12  
12  
2.80  
2.80  
1.14  
1.14  
1.14  
1.14  
7
7
140  
140  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
DWN 5  
DWP 5  
1200 -  
1800  
0.7  
1.0  
1.5  
1.5  
3.0  
3.0  
1.5  
1.5  
2.0  
2.0  
2.0  
2.0  
3.5  
3.5  
15.0  
12  
20  
31  
31  
42  
41  
59  
58  
78  
2.80  
1.80  
1.10  
1.10  
0.90  
0.90  
0.65  
0.65  
0.50  
0.50  
0.33  
0.35  
0.16  
0.16  
0.10  
1.14  
1.28  
1.34  
1.37  
1.33  
1.35  
1.24  
1.25  
1.31  
1.33  
1.26  
1.27  
1.18  
1.18  
1.09  
1.14  
1.28  
1.34  
1.37  
1.33  
1.35  
1.24  
1.25  
1.31  
1.33  
1.26  
1.27  
1.18  
1.18  
1.09  
7
30  
50  
50  
80  
80  
80  
80  
150  
150  
200  
200  
300  
300  
300  
150  
300  
320  
320  
500  
500  
630  
630  
900  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
11  
11  
12  
12  
24  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
50  
50  
50  
50  
50  
50  
50  
50  
30  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
0.64  
0.64  
1
1
3
3
6
6
50  
DWN 2  
DWN 9  
DWN 17  
DWP 17  
DWN 21  
DWP 21  
DWN 35  
DWP 35  
DWN 50  
DWP 50  
DWN 75  
DWP 75  
DWN 110  
DWP 110  
DWN 340  
76  
900  
115  
118  
253  
253  
416  
1500  
1500  
3200  
3200  
5900  
24  
45  
45  
235  
1600 -  
2200  
3.5  
3.5  
253  
788  
0.16  
0.05  
1.18  
1.10  
1.18  
1.10  
300  
600  
3200  
10500  
45  
45  
50  
40  
6
50  
DWN 108  
DWN 347  
1
Mounted on DCB  
© 2004 IXYS All rights reserved  
18  
Rectifier Diodes  
Type  
Chips  
per  
Dimensions  
Si-  
thickn.  
A
B
Wafer  
mm  
mm  
mm  
1123  
716  
4.40  
4.40  
2.10  
2.10  
0.265  
0.265  
DWN 5  
DWP 5  
•
•
1204  
684  
518  
518  
346  
346  
259  
259  
198  
198  
125  
125  
58  
2.95  
3.90  
4.45  
4.45  
5.40  
5.40  
6.20  
6.20  
7.10  
7.10  
8.70  
8.70  
2.95  
3.90  
4.45  
4.45  
5.40  
5.40  
6.20  
6.20  
7.10  
7.10  
8.70  
8.70  
0.265  
0.265  
0.265  
0.265  
0.265  
0.265  
0.265  
0.265  
0.265  
0.265  
0.265  
0.265  
0.265  
0.265  
0.265  
DWN 2  
DWN 9  
•
•
•
•
•
•
•
•
•
•
DWN 17  
DWP 17  
DWN 21  
DWP 21  
DWN 35  
DWP 35  
DWN 50  
DWP 50  
DWN 75  
DWP 75  
DWN 110  
DWP 110  
DWN 340  
•
•
•
DWN  
•
•
•
•
•
•
•
12.30 12.30  
12.30 12.30  
16.20 16.20  
58  
32  
•
•
58  
16  
12.30 12.30  
25.30 18.50  
0.315  
0.315  
DWN 108  
DWN 347  
•
•
±5%  
-0.1  
-0.1  
Tolerance  
DWP  
19  
© 2004 IXYS All rights reserved  
FRED - Fast Recovery Epitaxial Diodes  
1
Type  
IR  
IF(AV)M  
rect. d = 0.5  
TC = 100°C  
A
VF  
IFSM  
Reverse Recovery  
VRRM  
TVJM  
RthJC  
VRRM  
125°C  
mA  
@IF  
IRM  
@IF  
@-di/dt  
@-di/dt  
TVJ  
25°C  
V
=
trr  
@IF  
typ.  
@
25°C; VR = 100 V  
A
VR = 30 V  
typ. ns  
V
°C  
K/W  
V
°C  
A
A
A
A/µs  
200  
5.0  
11.0  
20.0  
150  
54  
91  
244  
0.9  
tbd  
0.4  
1.09  
1.03  
1.12  
0.84  
0.87  
0.87  
150  
150  
150  
30  
100  
125  
300  
475  
1200  
4
4
2
50  
100  
12.5  
100  
100  
25  
35  
35  
tbd  
1
1
1
100  
200  
350  
DWEP 27-02  
DWEP 37-02  
DWEP 77-02  
600  
1.5  
1.5  
3.0  
7.0  
7.0  
14.0  
17.0  
20.0  
tbd  
8
2.5  
2.5  
1.6  
0.9  
0.9  
0.8  
0.7  
0.4  
1.65  
1.45  
1.65  
1.53  
1.53  
1.73  
1.58  
1.31  
1.48  
1.31  
1.48  
1.33  
1.38  
1.48  
1.38  
1.10  
150  
150  
150  
150  
150  
150  
125  
125  
8
8
50  
100  
100  
250  
300  
550  
600  
1000  
5
5
5
5
5
5
5
20  
12  
25  
25  
50  
50  
100  
100  
80  
100  
100  
100  
100  
100  
100  
100  
200  
tbd  
35  
35  
35  
35  
35  
35  
35  
tbd  
1
1
1
1
1
1
1
tbd  
50  
50  
100  
100  
200  
200  
350  
DWEP 8-06  
DWEP 12-06  
DWEP 15-06  
DWEP 23-06  
DWEP 25-06  
DWEP 35-06  
DWEP 55-06  
DWEP 75-06  
12  
30  
30  
60  
80  
162  
16  
30  
43  
70  
75  
75  
1000  
1200  
2.0  
4.0  
7.0  
tbd  
12  
30  
30  
60  
2.5  
1.6  
0.9  
0.9  
0.8  
0.7  
0.4  
2.65  
2.65  
2.43  
2.35  
2.24  
2.12  
1.89  
2.09  
2.09  
2.04  
1.99  
1.79  
1.68  
1.57  
150  
150  
150  
150  
150  
125  
125  
6
12  
30  
36  
60  
50  
75  
40  
75  
7
5
7
7
7
12  
25  
50  
50  
100  
50  
100  
100  
100  
100  
100  
120  
200  
tbd  
35  
35  
35  
35  
35  
35  
tbd  
1
1
1
1
1
1
tbd  
50  
DWEP 3-10  
DWEP 10-10  
DWEP 18-10  
DWEP 20-10  
DWEP 30-10  
DWEP 50-10  
DWEP 70-10  
200  
200  
500  
500  
800  
100  
100  
200  
200  
350  
7.0  
14.0  
17.0  
20.0  
82  
129  
6
14  
80  
2.0  
4.0  
7.0  
tbd  
12  
30  
30  
60  
2.5  
1.6  
0.9  
0.9  
0.7  
0.7  
0.4  
2.55  
2.55  
2.60  
2.50  
2.35  
2.19  
1.77  
2.19  
2.19  
2.19  
2.19  
1.94  
1.89  
1.54  
150  
150  
150  
150  
150  
125  
125  
5
12  
30  
30  
60  
50  
75  
80  
75  
7
5
7
7
7
10  
25  
50  
50  
100  
50  
100  
100  
100  
100  
100  
100  
200  
tbd  
50  
40  
40  
40  
40  
40  
tbd  
1
1
1
1
1
1
tbd  
50  
DWEP 6-12  
DWEP 9-12  
DWEP 17-12  
DWEP 19-12  
DWEP 29-12  
DWEP 49-12  
DWEP 69-12  
200  
200  
500  
500  
800  
100  
100  
200  
200  
350  
7.0  
14.0  
17.0  
20.0  
77  
123  
9
20  
75  
1
Mounted on DCB  
© 2004 IXYS All rights reserved  
20  
FRED - Fast Recovery Epitaxial Diodes  
Type  
Chips  
per  
Dimensions  
Si-  
thickn.  
A
B
Wafer  
mm  
mm  
mm  
518  
257  
151  
4.45  
6.20  
8.91  
4.45  
6.20  
7.22  
0.35  
0.35  
0.35  
DWEP 27-02  
DWEP 37-02  
DWEP 77-02  
•
•
•
•
1612  
1851  
990  
531  
518  
257  
230  
151  
3.60  
2.40  
3.25  
5.50  
4.45  
6.20  
8.65  
8.91  
1.80  
2.40  
3.25  
3.50  
4.45  
6.20  
4.95  
7.22  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
DWEP 8-06  
DWEP 12-06  
DWEP 15-06  
DWEP 23-06  
DWEP 25-06  
DWEP 35-06  
DWEP 55-06  
DWEP 75-06  
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1612  
990  
531  
518  
257  
230  
151  
1.80  
3.25  
5.50  
4.45  
6.20  
8.65  
8.91  
3.60  
3.25  
3.50  
4.45  
6.20  
4.95  
7.22  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
DWEP 3-10  
DWEP 10-10  
DWEP 18-10  
DWEP 20-10  
DWEP 30-10  
DWEP 50-10  
DWEP 70-10  
•
•
•
•
•
•
•
•
1851  
990  
531  
518  
257  
230  
151  
2.40  
3.25  
5.50  
4.45  
6.20  
8.65  
8.91  
2.40  
3.25  
3.50  
4.45  
6.20  
4.95  
7.22  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
DWEP 6-12  
DWEP 9-12  
DWEP 17-12  
DWEP 19-12  
DWEP 29-12  
DWEP 49-12  
DWEP 69-12  
•
•
•
•
•
•
•
•
•
•
•
•
•
-0.1  
-0.1  
5%  
Tolerance  
21  
© 2004 IXYS All rights reserved  
Low Leakage Fast Recovery Epitaxial Diodes  
1
Type  
VRRM  
IR  
TVJM  
IF(AV)M  
rect. d = 0.5  
TC= 100°C  
A
RthJC  
VF  
TVJ =  
IFSM  
Reverse Recovery  
VRRM  
TVJ M  
mA  
@IF  
IRM  
@IF  
@-di/dt  
trr  
@IF  
@-di/dt  
25°C  
V
175°C  
V
typ.  
K/W  
25°C; VR = 100 V  
A
VR = 30 V  
typ. ns  
V
°C  
A
A
A
A/µs  
200  
0.20  
0.50  
0.50  
0.20  
175  
14  
29  
25  
46  
2.50  
1.60  
1.60  
0.90  
1.21  
0.99  
1.13  
1.10  
0.75  
0.74  
0.78  
0.80  
5
12  
12  
30  
80  
140  
140  
325  
2.4  
2.4  
1.1  
2.0  
10  
25  
25  
50  
100  
100  
100  
100  
25  
25  
25  
25  
1
1
1
1
50  
100  
100  
200  
DWLP 4-02  
DWLP 15-02  
DWLP 15-02B  
DWLP 25-02  
300  
0.20  
0.25  
0.50  
0.50  
1.00  
1.00  
2.50  
4.00  
13  
15  
25  
29  
51  
41  
72  
117  
2.80  
2.50  
1.60  
1.60  
0.90  
0.90  
0.65  
0.40  
1.63  
1.45  
1.44  
1.26  
1.19  
1.49  
1.42  
1.43  
0.96  
0.95  
0.94  
0.60  
0.77  
0.99  
0.91  
0.92  
5
6
40  
60  
1.3  
1.4  
1.4  
1.4  
3.0  
1.9  
2.8  
3.2  
10  
12  
25  
25  
50  
50  
130  
200  
100  
100  
100  
100  
100  
100  
100  
100  
30  
30  
30  
30  
30  
25  
30  
30  
1
1
1
1
1
1
1
1
50  
50  
DWLP 4-03  
DWLP 8-03  
12  
12  
30  
30  
60  
100  
110  
110  
300  
300  
600  
1000  
100  
100  
200  
200  
300  
400  
DWLP 15-03  
DWLP 15-03A  
DWLP 23-03  
DWLP 23-03A  
DWLP 55-03  
DWLP 75-03  
400  
600  
0.25  
0.50  
1.00  
2.50  
4.00  
8.50  
14  
24  
46  
67  
117  
148  
2.50  
1.60  
0.90  
0.65  
0.40  
0.35  
1.40  
1.40  
1.43  
1.12  
1.39  
6.14  
0.91  
0.90  
0.93  
0.81  
0.89  
9.72  
6
12  
30  
60  
100  
300  
60  
110  
300  
600  
1000  
1200  
1.4  
2.5  
2.5  
3.5  
4.0  
9.5  
12  
25  
50  
130  
200  
200  
100  
100  
100  
100  
100  
100  
30  
30  
30  
30  
30  
30  
1
1
1
1
1
1
50  
100  
200  
300  
400  
800  
DWLP 8-04  
DWLP 15-04  
DWLP 23-04  
DWLP 55-04  
DWLP 75-04  
DWLP 150-04  
0.20  
0.25  
0.25  
0.50  
0.50  
1.00  
2.00  
2.50  
4.00  
11  
12  
11  
21  
16  
40  
30  
62  
99  
2.80  
2.50  
2.50  
1.60  
1.60  
0.90  
0.90  
0.65  
0.40  
1.97  
1.95  
2.39  
1.95  
2.38  
1.54  
2.45  
1.92  
1.93  
1.14  
1.13  
1.25  
1.12  
1.23  
1.10  
1.35  
1.10  
1.11  
5
6
6
12  
12  
30  
30  
60  
100  
40  
50  
50  
110  
110  
250  
250  
600  
1000  
2.6  
2.6  
1.4  
2.9  
1.5  
3.5  
2.0  
4.0  
4.5  
10  
12  
12  
25  
25  
50  
50  
130  
200  
100  
100  
100  
100  
100  
100  
100  
100  
100  
30  
35  
30  
35  
35  
35  
30  
35  
35  
1
1
1
1
1
1
1
1
1
50  
50  
50  
100  
100  
200  
200  
300  
400  
DWLP 4-06  
DWLP 8-06A  
DWLP 8-06B  
DWLP 15-06A  
DWLP 15-06B  
DWLP 23-06A  
DWLP 23-06B  
DWLP 55-06  
DWLP 75-06  
1200  
0.25  
0.50  
1.00  
2.50  
4.00  
9
14  
29  
48  
78  
2.50  
1.60  
0.90  
0.65  
0.40  
2.61  
2.45  
2.68  
2.54  
2.56  
1.46  
1.52  
1.52  
1.40  
1.42  
6
12  
30  
60  
100  
40  
90  
200  
500  
800  
5.0  
5.7  
6.7  
7.0  
7.4  
12  
25  
50  
130  
200  
100  
100  
100  
100  
100  
40  
40  
40  
40  
40  
1
1
1
1
1
50  
100  
200  
300  
400  
DWLP 8-12  
DWLP 15-12  
DWLP 23-12  
DWLP 55-12  
DWLP 75-12  
1
Mounted on DCB  
© 2004 IXYS All rights reserved  
22  
Low Leakage Fast Recovery Epitaxial Diodes  
Type  
Chips  
per  
Wafer  
Dimensions  
Si-  
thickn.  
A
B
mm  
mm  
mm  
1960  
990  
990  
518  
3.00  
3.25  
3.25  
4.45  
1.80  
3.25  
3.25  
4.45  
0.37  
0.37  
0.37  
0.37  
DWLP 4-02  
•
•
•
•
DWLP 15-02  
DWLP 15-02B  
DWLP 25-02  
1960  
1612  
990  
990  
531  
531  
230  
151  
3.00  
3.60  
3.25  
3.25  
5.50  
5.50  
8.65  
8.91  
1.80  
1.80  
3.25  
3.25  
3.50  
3.50  
4.95  
7.22  
0.37  
0.37  
0.37  
0.37  
0.37  
0.37  
0.37  
0.37  
DWLP 4-03  
DWLP 8-03  
•
•
•
•
•
•
•
•
DWLP 15-03  
DWLP 15-03A  
DWLP 23-03  
DWLP 23-03A  
DWLP 55-03  
DWLP 75-03  
•
1612  
990  
531  
230  
151  
74  
3.60  
3.25  
5.50  
8.65  
8.91  
13.00  
1.80  
3.25  
3.50  
4.95  
7.22  
9.77  
0.38  
0.38  
0.38  
0.38  
0.38  
0.38  
DWLP 8-04  
•
•
•
•
•
•
DWLP 15-04  
DWLP 23-04  
DWLP 55-04  
DWLP 75-04  
DWLP 150-04  
•
•
•
1960  
1612  
1612  
990  
990  
531  
531  
230  
151  
3.00  
3.60  
3.60  
3.25  
3.25  
5.50  
5.50  
8.65  
8.91  
1.80  
1.80  
1.80  
3.25  
3.25  
3.50  
3.50  
4.95  
7.22  
0.40  
0.40  
0.40  
0.40  
0.40  
0.40  
0.40  
0.40  
0.40  
DWLP 4-06  
•
•
•
•
•
•
•
•
•
DWLP 8-06A  
DWLP 8-06B  
DWLP 15-06A  
DWLP 15-06B  
DWLP 23-06A  
DWLP 23-06B  
DWLP 55-06  
DWLP 75-06  
•
•
1612  
990  
531  
230  
151  
3.60  
3.25  
5.50  
8.65  
8.91  
1.80  
3.25  
3.50  
4.95  
7.22  
0.46  
0.46  
0.46  
0.46  
0.46  
DWLP 8-12  
DWLP 15-12  
DWLP 23-12  
DWLP 55-12  
DWLP 75-12  
•
•
•
•
•
•
-0.1  
-0.1  
5%  
Tolerance  
23  
© 2004 IXYS All rights reserved  
SONIC-FRDTM Diodes  
1
Type  
IF(AV)M  
rect. d = 0.5  
TC = 100°C  
A
VF  
TVJ  
IFSM  
Reverse Recovery  
VRRM  
IR  
VRRM  
125°C  
typ. mA  
TVJM  
RthJC  
=
@IF  
IRM  
25°C  
typ. A  
trr  
typ.  
ns  
@IF  
@-di/dt  
typ.  
25°C  
V
150°C  
V
V
°C  
K/W  
A
A
A
A/µs  
in design  
600  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
150  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
0.90  
0.65  
0.40  
tbd  
tbd  
tbd  
1.94  
2.04  
2.05  
tbd  
tbd  
tbd  
1.68  
1.78  
1.80  
tbd  
tbd  
tbd  
20  
60  
100  
tbd  
tbd  
tbd  
200  
450  
750  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
20  
60  
100  
tbd  
tbd  
tbd  
200  
450  
750  
tbd  
DWHP 8-06 F  
DWHP 15-06 F  
DWHP 23-06 F  
DWHP 56-06 F  
DWHP 69-06 F  
DWHP 150-06 F  
in design  
1200  
0.1  
0.2  
0.6  
0.6  
1
12  
17  
29  
37  
47  
0.90  
0.90  
0.65  
0.65  
0.40  
0.40  
tbd  
3.08  
2.97  
3.15  
2.12  
3.17  
2.13  
2.00  
2.61  
2.49  
2.70  
1.98  
2.72  
1.99  
1.87  
10  
20  
60  
100  
200  
450  
450  
750  
750  
1150  
tbd  
7
tbd  
65  
50  
175  
125  
330  
170  
10  
20  
60  
100  
200  
450  
tbd  
750  
750  
1150  
DWHFP 15-12 F  
DWHFP 23-12 F  
DWHFP 56-12 F  
DWHFP 56-12 S  
DWHFP 69-12 F  
DWHFP 69-12 S  
DWHFP 150-12 S  
18  
28  
36  
53  
54  
60  
60  
100  
100  
150  
100  
100  
150  
1
1.5  
60  
150  
1700  
0.6  
1
1.8  
tbd  
31  
51  
tbd  
tbd  
0.65  
0.40  
0.22  
tbd  
2.35  
2.34  
1.95  
tbd  
2.46  
2.44  
2.03  
tbd  
60  
100  
tbd  
350  
650  
1150  
tbd  
30  
50  
78  
tbd  
150  
350  
tbd  
60  
100  
150  
tbd  
400  
600  
1150  
tbd  
DLFP 55-17 S  
DLFP 68-17 S  
DLFP 150-17 S  
DLFP 200-17 S  
tbd  
tbd  
1600-  
1800  
0.1  
0.2  
0.6  
1
12  
16  
27  
44  
0.90  
0.90  
0.65  
0.40  
3.01  
2.86  
2.90  
2.89  
3.08  
2.90  
2.94  
2.93  
10  
20  
60  
50  
150  
350  
650  
tbd  
21  
30  
50  
tbd  
180  
330  
240  
10  
20  
60  
50  
450  
450  
800  
DLFP 15-16/18 F  
DLFP 25-16/18 F  
DLFP 55-16/18 F  
DLFP 68-16/18 F  
100  
100  
1
Mounted on DCB  
© 2004 IXYS All rights reserved  
24  
SONIC-FRDTM Diodes  
Type  
Chips  
per  
Dimensions  
Si-  
thickn.  
A
B
Wafer  
mm  
mm  
mm  
tbd  
968  
532  
231  
152  
88  
3.60  
3.25  
5.50  
8.65  
8.91  
11.40  
1.80  
3.25  
3.50  
4.95  
7.22  
9.40  
0.180  
DWHP 8-06 F  
DWHP 15-06 F  
DWHP 23-06 F  
DWHP 56-06 F  
DWHP 69-06 F  
DWHP 150-06 F  
•
•
•
•
•
•
968  
532  
231  
231  
152  
152  
88  
3.25  
5.50  
8.65  
8.65  
8.91  
8.91  
11.40  
3.25  
3.50  
4.95  
4.95  
7.22  
7.22  
9.40  
DWHFP 15-12 F  
DWHFP 23-12 F  
DWHFP 56-12 F  
DWHFP 56-12 S  
DWHFP 69-12 F  
DWHFP 69-12 S  
DWHFP 150-12 S  
•
•
•
•
•
•
•
231  
152  
88  
8.65  
8.91  
11.40  
12.40  
4.95  
7.22  
9.40  
0.265  
DLFP 55-17 S  
DLFP 68-17 S  
DLFP 150-17 S  
DLFP 200-17 S  
•
•
•
•
59  
12.40  
968  
532  
231  
152  
3.25  
4.45  
8.65  
8.91  
3.25  
4.45  
4.95  
7.22  
DLFP 15-16/18 F  
DLFP 25-16/18 F  
DLFP 55-16/18 F  
DLFP 68-16/18 F  
•
•
•
•
-0.1  
-0.1  
5%  
Tolerance  
25  
© 2004 IXYS All rights reserved  
GaAs Schottky Diodes  
Type  
IF(AV)M  
rect.  
RthJC  
TC = 90°C  
typ.  
VF typ  
TVJ  
IR typ  
@VRRM  
125°C  
µA  
Cj  
0,5*VRRM  
125°C  
pF  
IFSM  
VRRM  
TVJM  
=
@IF  
d = 0.5  
A
25°C  
V
125°C  
V
V
°C  
K/W  
A
A
100  
175  
8.5  
25.0  
10.12  
5.20  
0.62  
0.99  
0.54  
0.94  
2.0  
10.0  
700  
< 10  
19.0  
19.0  
12.5  
80.0  
DWGS04-01A  
DWGS10-01C  
180  
250  
300  
5.0  
8,4  
11.0  
15.0  
17.0  
23.0  
10.12  
10.12  
5.20  
5.20  
3.70  
3.70  
0.85  
1.25  
0.80  
1.21  
0.80  
1.24  
0.85  
1.02  
0.80  
1.04  
0.80  
1.07  
2.0  
4.0  
5.0  
10.0  
7.5  
20.0  
700  
< 10  
1300  
< 10  
2000  
< 10  
8.8  
8.8  
22.0  
22.0  
33.0  
33.0  
12.5  
32.0  
30.0  
80.0  
50.0  
120.0  
DWGS04-018A  
DWGS04-018C  
DWGS10-018A  
DWGS10-018C  
DWGS20-018A  
DWGS20-018C  
3.9  
7.8  
9.0  
14.0  
13.0  
20.0  
10.12  
10.12  
5.20  
5.20  
3.70  
3.70  
1.30  
1.26  
1.25  
1.26  
1.25  
1.24  
1.30  
1.05  
1.25  
1.07  
1.25  
1.10  
2.0  
4.0  
5.0  
10.0  
7.5  
20.0  
700  
< 10  
1300  
< 10  
2000  
< 10  
6.4  
6.4  
18.0  
18.0  
26.0  
26.0  
12.5  
32.0  
30.0  
80.0  
50.0  
120.0  
DWGS04-025A  
DWGS04-025C  
DWGS10-025A  
DWGS10-025C  
DWGS20-025A  
DWGS20-025C  
3.5  
6.0  
8.0  
17.5  
25.0  
10.12  
10.12  
5.20  
5.20  
3.70  
1.60  
1,56  
1.60  
1.56  
1,56  
1.60  
1,10  
1.60  
1.11  
1,14  
2.0  
4.0  
5.0  
10.0  
20.0  
700  
< 10  
1300  
10  
3.7  
3.7  
9.0  
9.0  
14.0  
12.5  
32.0  
30.0  
80.0  
120.0  
DWGS04-03A  
DWGS04-03C  
DWGS10-03A  
DWGS10-03C  
DWGS20-03C  
15  
© 2004 IXYS All rights reserved  
26  
GaAs Schottky Diodes  
Chips  
Dim ensions  
per  
A
B
Wafer  
mm  
mm  
4060  
2126  
1.30  
2.10  
1.30  
1.60  
DWGS04-01A  
DWGS10-01C  
•
•
4060  
4060  
2126  
2126  
1480  
1480  
1.30  
1.30  
2.10  
2.10  
3.00  
3.00  
1.30  
1.30  
1.60  
1.60  
1.60  
1.60  
DWGS04-018A  
DWGS04-018C  
DWGS10-018A  
DWGS10-018C  
DWGS20-018A  
DWGS20-018C  
•
•
•
•
•
•
4060  
4060  
2126  
2126  
1480  
1480  
1.30  
1.30  
2.10  
2.10  
3.00  
3.00  
1.30  
1.30  
1.60  
1.60  
1.60  
1.60  
DWGS04-025A  
DWGS04-025C  
DWGS10-025A  
DWGS10-025C  
DWGS20-025A  
DWGS20-025C  
•
•
•
•
•
•
4060  
4060  
2126  
2126  
1480  
1.30  
1.30  
2.10  
2.10  
3.00  
1.30  
1.30  
1.60  
1.60  
1.60  
DWGS04-03A  
DWGS04-03C  
DWGS10-03A  
DWGS10-03C  
DWGS20-03C  
•
•
•
•
•
-0.1  
-0.1  
Tolerance  
27  
© 2004 IXYS All rights reserved  
Schottky Diodes  
1
Type  
IR  
VRRM  
125°C  
1) = 100°C  
mA  
IF(AV)M  
rect. d = 0.5  
TC = 125°C  
1) = 100°C  
A
VF  
TVJ  
IFSM  
Reverse Recovery  
VRRM  
TVJM  
RthJC  
=
@IF  
@IF  
@-di/dt  
IRM  
25°C  
trr  
typ.  
25°C  
A version: 150°C  
B version: 125°C  
V
typ.  
V
8
°C  
K/W  
0.8  
V
A
A
A
ns  
A
A/µs  
200  
1)  
1)  
145  
150  
145  
0.31  
0.18  
60  
1000  
tbd  
tbd  
50  
DWS 39-08D  
15  
tbd  
65  
98  
150  
150  
150  
tbd  
65  
98  
1.7  
1.4  
1.1  
0.40  
0.39  
0.39  
0.28  
0.24  
0.25  
10  
20  
40  
160  
350  
660  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
20  
40  
tbd  
200  
200  
DWS 9-15B  
DWS 19-15B  
DWS 29-15B  
1)  
1)  
1)  
1)  
30  
tbd  
tbd  
82  
102  
65  
tbd  
150  
150  
150  
150  
tbd  
tbd  
82  
102  
65  
tbd  
1.4  
1.1  
0.8  
1.2  
0.63  
tbd  
0.42  
0.40  
0.41  
0.43  
tbd  
0.29  
0.27  
0.30  
10  
20  
40  
40  
28  
tbd  
330  
520  
800  
420  
tbd  
2.40  
tbd  
tbd  
5.50  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
20  
40  
50  
30  
tbd  
200  
200  
200  
200  
DWS 7-30B  
DWS 17-30B  
DWS 27-30B  
DWS 37-30B  
DWS 217-30B  
1)  
1)  
1)  
1)  
1)  
1)  
1)  
1)  
45  
28  
32  
42  
47  
63  
68  
89  
95  
150  
175  
150  
175  
150  
175  
150  
175  
28  
32  
42  
47  
63  
68  
89  
95  
1.7  
1.7  
1.4  
1.4  
1.1  
1.1  
0.8  
0.8  
0.48  
0.66  
0.48  
0.66  
0.48  
0.66  
0.48  
0.66  
0.41  
0.50  
0.41  
0.50  
0.42  
0.50  
0.41  
0.51  
10  
10  
20  
20  
40  
40  
60  
60  
160  
140  
320  
280  
640  
550  
900  
800  
1.00  
1.00  
1.40  
1.50  
2.00  
2.00  
2.60  
2.50  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
10  
10  
20  
20  
40  
40  
50  
50  
200  
200  
200  
200  
200  
200  
200  
200  
DWS 3-45B  
DWS 4-45A  
DWS 13-45B  
DWS 14-45A  
DWS 23-45B  
DWS 24-45A  
DWS 33-45B  
DWS 34-45A  
1)  
1)  
1)  
1)  
1)  
1)  
1
Mounted on DCB  
© 2004 IXYS All rights reserved  
28  
Schottky Diodes  
Type  
Chips  
per  
Dimensions  
Si-  
thickn.  
A
B
Wafer  
mm  
mm  
mm  
343  
5.40  
5.40  
0.25/0.43  
DWS 39-08D  
•
1886  
990  
515  
2.40  
3.25  
4.45  
2.40  
3.25  
4.45  
0.25/0.43  
0.25  
DWS 9-15B  
DWS 19-15B  
DWS 29-15B  
•
•
•
2857  
990  
515  
515  
729  
2.40  
3.25  
4.45  
5.40  
3.25  
2.40  
3.25  
4.45  
5.40  
4.45  
DWS 7-30B  
•
•
•
•
•
DWS 17-30B  
DWS 27-30B  
DWS 37-30B  
DWS 217-30B  
2857  
1886  
1515  
990  
757  
757  
2.40  
2.40  
3.25  
3.25  
4.45  
4.45  
5.40  
5.40  
2.40  
2.40  
3.25  
3.25  
4.45  
4.45  
5.40  
5.40  
DWS 3-45B  
DWS 4-45A  
DWS 13-45B  
DWS 14-45A  
DWS 23-45B  
DWS 24-45A  
DWS 33-45B  
DWS 34-45A  
•
•
•
•
•
•
•
•
•
515  
515  
•
•
±5%  
-0.1  
-0.1  
Tolerance  
29  
© 2004 IXYS All rights reserved  
Schottky Diodes  
1
Type  
IR  
VRRM  
125°C  
1) = 100°C  
mA  
IF(AV)M  
rect. d = 0.5  
TC = 125°C  
1) = 100°C  
A
VF  
TVJ  
IFSM  
Reverse Recovery  
VRRM  
TVJM  
RthJC  
=
@IF  
@IF  
@-di/dt  
IRM  
25°C  
trr  
typ.  
25°C  
V
150°C  
typ.  
V
°C  
K/W  
V
A
A
A
ns  
A
A/µs  
60  
tbd  
43  
63  
175  
150  
150  
150  
tbd  
43  
63  
82  
1.7  
1.4  
1.1  
0.8  
tbd  
tbd  
10  
20  
40  
60  
170  
320  
660  
900  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
20  
40  
50  
tbd  
200  
200  
200  
DWS 5-60A  
DWS 15-60B  
DWS 25-60B  
DWS 35-60B  
0.60  
0.59  
0.53  
0.60  
0.50  
0.48  
1)  
1)  
82  
2.50  
1)  
80  
66  
91  
150  
175  
66  
91  
1.1  
0.8  
0.70  
0.74  
0.55  
0.58  
40  
60  
660  
700  
1.50  
2.00  
tbd  
tbd  
40  
50  
200  
200  
DWS 25-80B  
DWS 36-80A  
100  
32  
45  
65  
92  
175  
175  
175  
175  
32  
45  
65  
92  
1.7  
1.4  
1.1  
0.8  
0.77  
0.78  
0.78  
0.77  
0.57  
0.57  
0.58  
0.57  
10  
20  
40  
60  
120  
230  
450  
700  
2.00  
2.30  
2.60  
3.40  
tbd  
tbd  
tbd  
tbd  
10  
20  
40  
50  
200  
200  
200  
200  
DWS 2-100A  
DWS 12-100A  
DWS 22-100A  
DWS 32-100A  
150  
30  
43  
60  
85  
175  
175  
175  
175  
30  
43  
60  
85  
1.7  
1.4  
1.1  
0.8  
0.81  
0.81  
0.81  
0.81  
0.62  
0.62  
0.63  
0.62  
10  
20  
40  
60  
120  
200  
450  
700  
3.00  
4.00  
tbd  
tbd  
tbd  
tbd  
tbd  
10  
20  
40  
50  
200  
200  
200  
200  
DWS 1-150A  
DWS 11-150A  
DWS 21-150A  
DWS 31-150A  
4.50  
180  
200  
30  
175  
175  
30  
1.7  
0.8  
0.81  
0.00  
0.62  
0.00  
10  
60  
120  
700  
3.50  
5.00  
tbd  
tbd  
10  
50  
200  
200  
DWS 1-180A  
DWS 30-200A  
tbd  
tbd  
1
Mounted on DCB  
© 2004 IXYS All rights reserved  
30  
Schottky Diodes  
Type  
Chips  
per  
Dimensions  
Si-  
thickn.  
A
B
Wafer  
mm  
mm  
mm  
2857  
990  
757  
515  
2.40  
3.25  
4.45  
5.40  
2.40  
3.25  
4.45  
5.40  
0.25  
DWS 5-60A  
DWS 15-60B  
DWS 25-60B  
DWS 35-60B  
•
•
•
•
515  
343  
4.45  
5.40  
4.45  
5.40  
DWS 25-80B  
DWS 36-80A  
•
•
1886  
990  
757  
515  
2.40  
3.25  
4.45  
5.40  
2.40  
3.25  
4.45  
5.40  
DWS 2-100A  
DWS 12-100A  
DWS 22-100A  
DWS 32-100A  
•
•
•
•
•
2857  
1515  
757  
2.40  
3.25  
4.45  
5.40  
2.40  
3.25  
4.45  
5.40  
DWS 1-150A  
DWS 11-150A  
DWS 21-150A  
DWS 31-150A  
•
•
•
•
515  
1886  
515  
2.40  
5.40  
-0.1  
2.40  
5.40  
-0.1  
DWS 1-180A  
DWS 30-200A  
Tolerance  
•
•
±5%  
31  
© 2004 IXYS All rights reserved  
Phase Control Thyristors  
1
Type  
IR  
VRRM  
TVJ M  
IT(AV)M  
rect. d = 0.5  
VT  
TVJ  
ITSM  
non-rep.  
tq  
IH  
IL  
VDRM  
VRRM  
TVJM  
RthJC  
VR = 100V, VD = 2/3 VDRM  
=
RGK = ∝  
VD = 6 V TVJ = 25°C  
TVJ = 25°C  
@IT  
dv/dt  
@IT  
@tp  
TC = 100°C  
max.  
25°C 150°C  
tp = 10ms tp = 200µs, di/dt = -10A/µs  
TVJ = TVJM  
1)  
=
75°C  
A
V
mA  
°C  
K/W  
V
V
A
A
µs  
V/µs  
A
ns  
mA  
µs  
1)  
800 -  
1200  
5
4
4
125  
150  
150  
150  
15  
1.7  
1.7  
1.7  
0.7  
1.55 1.41  
1.53 1.53  
1.53 1.53  
20  
44  
44  
200  
300  
300  
tbd  
60  
60  
tbd  
20  
20  
10  
tbd  
16  
16  
50  
50  
75  
100  
100  
100  
10  
10  
10  
10  
CWP 7-CG  
CWP 8  
CWP 8-CG  
CWP 35  
tbd  
tbd  
tbd  
40  
80  
80  
20  
1.46 1.49 150  
1200  
100  
1200 -  
1600 -  
8
12  
12  
20  
20  
150  
25  
61  
36  
tbd  
tbd  
1.2  
1.1  
0.9  
0.9  
0.9  
1.40 1.41  
1.56 1.57  
1.55 1.57  
45  
80  
80  
60  
60  
400  
520  
520  
600  
600  
150  
150  
150  
60  
10  
20  
15  
20  
20  
11  
15  
20  
25  
25  
100  
100  
100  
100  
100  
150  
150  
450  
200  
200  
10  
10  
10  
10  
10  
CWP 16-CG  
CWP 21-CG  
CWP 22-CG  
CWP 24  
1.33  
tbd  
1.33 1.31  
60  
CWP 25-CG  
1200 -  
1800  
20  
20  
20  
20  
30  
40  
40  
60  
125  
tbd  
tbd  
0.5  
0.6  
0.5  
0.4  
0.2  
0.2  
0.2  
0.1  
1.53 1.58 200  
1.38 1.38 200  
1.29 1.26 200  
1.35 1.35 300  
1.21 1.16 350  
1.22 1.17 450  
1.21 1.17 600  
1.17 1.11 600  
1150  
1500  
1900  
2400  
4750  
5200  
7000  
9500  
150  
150  
150  
185  
150  
150  
200  
200  
20  
20  
20  
20  
20  
20  
50  
50  
120  
150  
150  
150  
160  
300  
300  
300  
200  
200  
200  
200  
200  
200  
150  
150  
450  
450  
450  
450  
300  
300  
200  
200  
10  
10  
10  
10  
30  
30  
30  
30  
CWP 41  
CWP 50  
CWP 55  
CWP 71  
CWP 130  
CWP 180  
CWP 341  
CWP 347  
tbd  
204  
372  
tbd  
540  
1600 -  
2200  
20  
40  
60  
tbd  
tbd  
520  
0.2  
0.2  
0.1  
1.55  
1.26  
tbd  
tbd  
300  
300  
1700  
6000  
8000  
185  
150  
200  
20  
20  
50  
150  
160  
300  
150  
150  
150  
200  
200  
200  
30  
30  
30  
CWP 69  
CWP 339  
CWP 345  
1.34 1.34 600  
1
Mounted on DCB  
© 2004 IXYS All rights reserved  
32  
Phase Control Thyristors  
Type  
Chips  
per  
Dimensions  
Si-  
thickn.  
A
B
F
G
Corner Gate  
L
Wafer  
J
M
mm  
mm  
mm  
mm  
mm  
mm  
mm  
mm  
518  
375  
375  
125  
4.45  
5.20  
5.20  
8.70  
4.45  
5.20  
5.20  
8.70  
-
-
0.2  
-
0.2  
-
1.1  
-
1.1  
-
1.6  
-
1.6  
-
0.38  
0.38  
0.32  
0.38  
CWP 7-CG  
CWP 8  
CWP 8-CG  
CWP 35  
•
•
•
•
•
•
1.80  
1.80  
1.80  
0.90  
0.90  
1.00  
•
239  
196  
196  
196  
196  
6.50  
7.10  
7.10  
7.10  
7.10  
6.50  
7.10  
7.10  
7.10  
7.10  
-
-
-
-
0.2  
0.2  
0.2  
-
1.1  
1.1  
1.1  
-
1.6  
1.6  
1.6  
-
0.38  
0.38  
0.38  
0.32  
0.32  
CWP 16-CG  
CWP 21-CG  
CWP 22-CG  
CWP 24  
•
•
•
•
•
•
•
•
•
•
-
1.80  
-
-
1.00  
-
0.2  
1.1  
1.6  
CWP 25-CG  
94  
74  
58  
50  
29  
20  
16  
13  
10.00 10.00  
13.00 9.77  
2.30  
2.30  
2.30  
2.30  
3.46  
3.50  
3.50  
3.50  
1.50  
1.50  
1.50  
1.50  
2.50  
2.50  
2.50  
2.50  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.38  
0.38  
0.38  
0.38  
0.38  
0.38  
0.38  
0.38  
CWP 41  
CWP 50  
CWP 55  
CWP 71  
CWP 130  
CWP 180  
CWP 341  
CWP 347  
•
•
•
•
•
•
•
•
•
•
•
•
•
•
12.30 12.30  
13.40 13.40  
19.05 15.40  
20.55 17.65  
25.30 18.50  
23.40 23.40  
50  
16  
13  
13.40 13.40  
18.50 25.30  
23.40 23.40  
2.30  
3.50  
3.50  
1.50  
2.50  
2.50  
-
-
-
-
-
-
-
-
-
0.46  
0.46  
0.46  
CWP 69  
CWP 339  
CWP 345  
•
•
•
-0.1  
-0.1  
-0.1  
+0.1  
-0.1  
+0.1 +0.1  
5%  
Tolerance  
...-CG types  
33  
© 2004 IXYS All rights reserved  
Fast Rectifier Diodes  
1
Type  
IR  
VF  
IFSM  
Reverse Recovery  
VRRM  
TVJM  
IF(AV)M  
RthJC  
VRRM  
TVJ M  
rect. d = 0.5  
TVJ =  
@IF  
@-di/dt  
@IF  
@-di/dt  
IRM  
25°C  
A
@IF  
trr  
typ.  
µs  
typ.  
25°C  
V
125°C  
TC = 75°C  
A
V
typ. mA  
°C  
K/W  
V
A
A
A
A/µs  
1600 -  
1800  
2
4
5
5
8
125  
10  
16  
17  
17  
23  
26  
2.9  
1.6  
1.3  
1.3  
0.9  
0.7  
1.79  
1.98  
1.89  
2.10  
1.98  
1.88  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
10  
30  
55  
55  
70  
80  
75  
160  
300  
300  
400  
500  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
4
8
10  
10  
15  
25  
5
5
10  
10  
15  
25  
DWFN 2-16/18  
DWFN 9-16/18  
DWFN 17-16/18  
DWFP 17-16/18  
DWFN 21-16/18  
DWFN 35-16/18  
10  
1
Mounted on DCB  
Type  
Chips  
per  
Dimensions  
Si-  
thickn.  
A
B
Wafer  
mm  
mm  
mm  
0.265  
0.265  
0.265  
0.265  
0.265  
0.265  
1204  
684  
518  
239  
346  
259  
2.95  
3.90  
4.45  
4.45  
5.40  
6.20  
2.95  
3.90  
4.45  
4.45  
5.40  
6.20  
DWFN 2-16/18  
DWFN 9-16/18  
DWFN 17-16/18  
DWFP 17-16/18  
DWFN 21-16/18  
DWFN 35-16/18  
•
•
•
•
•
•
•
•
DWFP  
DWFN  
±5%  
-0.1  
-0.1  
Tolerance  
© 2004 IXYS All rights reserved  
34  

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