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FII30-12E [IXYS]

NPT3 IGBT; NPT3 IGBT
FII30-12E
型号： FII30-12E
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

NPT3 IGBT
NPT3 IGBT

双极性晶体管
文件： 总4页 (文件大小：72K)
中文：  中文翻译
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FII 30-12E  
NPT3 IGBT  
IC25  
VCES  
VCE(sat)typ = 2.4 V  
= 33 A  
= 1200 V  
Phaseleg Topology  
in ISOPLUS i4-PACTM  
3
5
4
1
1
2
5
Features  
• NPT3 IGBT  
IGBTs  
Symbol  
VCES  
Conditions  
Maximum Ratings  
-positive temperature coefficient of  
saturation voltage for easy paralleling  
-fast switching  
-short tail current for optimized  
performance in resonant circuits  
• HiPerFREDTM diode  
TVJ = 25°C to 150°C  
1200  
20  
V
V
VGES  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
33  
20  
A
A
-fast reverse recovery  
-low operating forward voltage  
-low leakage current  
ICM  
VCEK  
VGE = 15 V; RG = 68 Ω; TVJ = 125°C  
40  
VCES  
A
µs  
W
RBSOA, Clamped inductive load; L = 100 µH  
• ISOPLUS i4-PACTM package  
-isolated back surface  
tSC  
(SCSOA)  
VCE = 900V; VGE = 15 V; RG = 68 Ω; TVJ = 125°C  
non-repetitive  
10  
-low coupling capacity between pins  
and heatsink  
-enlarged creepage towards heatsink  
-application friendly pinout  
-low inductive current path  
-high reliability  
Ptot  
TC = 25°C  
150  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
-industry standard outline  
- UL registered, E 72873  
min.  
typ. max.  
VCE(sat)  
IC = 20 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.4  
2.8  
2.9  
V
V
Applications  
• single phaseleg  
-buck-boost chopper  
• H bridge  
-power supplies  
-induction heating  
-four quadrant DC drives  
-controlled rectifier  
• three phase bridge  
-AC drives  
VGE(th)  
ICES  
IC = 0.6 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.2 mA  
mA  
0.2  
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
205  
105  
320  
175  
4.1  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 20 A  
VGE = 15 V; RG = 68 Ω  
-controlled rectifier  
1.5  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 20 A  
1.2  
100  
nF  
nC  
RthJC  
RthJH  
0.8 K/W  
K/W  
with heat transfer paste  
1.2  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
1 - 4  
FII 30-12E  
Diodes  
Symbol  
EquivalentCircuitsforSimulation  
Conduction  
Conditions  
Maximum Ratings  
IF25  
IF90  
TC = 25°C  
TC = 90°C  
25  
15  
A
A
Symbol  
VF  
Conditions  
Characteristic Values  
min. typ. max.  
IGBT (typ. at VGE = 15 V; TJ = 125°C)  
IF = 20 A; TVJ = 25°C  
TVJ = 125°C  
2.5  
1.9  
3.0  
V
V
V0 = 1.09 V; R0 = 85 mΩ  
Free Wheeling Diode (typ. at TJ = 125°C)  
IRM  
trr  
IF = 15 A; di /dt = -400 A/µs; TVJ = 125°C  
VR = 600 V;FVGE = 0 V  
16  
130  
A
ns  
V0 = 1.3 V; R0 = 32 mΩ  
RthJC  
RthCH  
(per diode)  
with heat transfer paste  
2.3 K/W  
K/W  
Thermal Response  
3.6  
Component  
Symbol  
IGBT (typ.)  
Conditions  
Maximum Ratings  
Cth1 = 0.049 J/K; Rth1 = 0.15 K/W  
Cth2 = 0.133 J/K; Rth2 = 0.65 K/W  
TVJ  
Tstg  
-55...+150  
-55...+125  
°C  
°C  
Free Wheeling Diode (typ.)  
Cth1 = 0.021 J/K; Rth1 = 0.63 K/W  
Cth2 = 0.052 J/K; Rth2 = 1.67 K/W  
VISOL  
FC  
IISOL ≤ 1 mA; 50/60 Hz  
2500  
V~  
N
mounting force with clip  
20...120  
Dimensions in mm (1 mm = 0.0394")  
Symbol  
Cp  
Conditions  
Characteristic Values  
min.  
typ. max.  
coupling capacity between shorted pins  
and mounting tab in the case  
40  
pF  
dS,dA  
dS,dA  
pin - pin  
pin - backside metal  
1.7  
5.5  
mm  
mm  
Weight  
9
g
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
2 - 4  
FII 30-12E  
80  
A
60  
A
VGE = 17 V  
15 V  
VGE = 17 V  
15 V  
13 V  
50  
IC  
TVJ = 125°C  
IC 60  
40  
30  
20  
10  
0
TVJ = 25°C  
13 V  
40  
20  
0
11 V  
9 V  
11 V  
9 V  
V
V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE  
VCE  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
50  
80  
A
VCE = 20 V  
A
IF  
60  
IC  
30  
20  
10  
0
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
40  
20  
0
TVJ = 125°C  
V
0
1
2
3
4
0
5
10  
15  
20  
V
VF  
VGE  
Fig. 3 Typ. transfer characteristics  
Fig. 4 Typ. forward characteristics of  
freewheelingdiode  
40  
A
200  
ns  
15  
V
VCE = 600 V  
IC = 20 A  
12  
30  
150  
IRM  
trr  
VGE  
trr  
9
20  
10  
0
100  
50  
0
6
3
0
TVJ = 125°C  
V
R = 600 V  
IF = 15 A  
IRM  
FII30-12E  
0
200  
400  
600  
A/µs 1000  
0
20  
40  
60  
80 nC 100  
QG  
-di/dt  
Fig. 5 Typ. turn on gate charge  
Fig. 6 Typ. turn off characteristics of  
freewheelingdiode  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
3 - 4  
FII 30-12E  
20  
mJ  
16  
250  
ns  
4.0  
mJ
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
400  
td(on)  
td(off)  
ns  
200  
tr  
300  
250  
200  
150  
100  
50  
Eoff  
Eon  
VCE = 600 V  
VGE 15 V  
t
t
VCE = 600 V  
VGE 15 V  
=
12  
8
150  
100  
50  
=
RG = 68 Ω  
TVJ = 125°C  
RG = 68 Ω  
TVJ = 125°C  
4
Eoff  
tf  
Eon  
0
0
40  
0
40  
A
0
10  
20  
30  
0
10  
20  
30  
A
IC  
IC  
Fig. 7 Typ. turn on energy and switching  
times versus collector current  
Fig. 8 Typ. turn off energy and switching  
times versus collector current  
10  
2.5  
mJ  
2.0  
1250  
ns  
VCE = 600 V  
VGE 15 V  
mJ  
8
=
1000  
IC = 20 A  
TVJ = 125°C  
Eoff  
Eon  
t
td(off)  
6
4
2
0
1.5  
1.0  
0.5  
0.0  
750  
500  
250  
0
Eoff  
VCE = 600 V  
VGE  
= 15 V  
IC = 20 A  
TVJ = 125°C  
tf  
200 Ω 250  
Ω
0
50  
100  
150  
RG  
200  
250  
0
50  
100  
150  
RG  
Fig. 9 Typ. turn on energy vs gate resistor  
Fig.10 Typ. turn off energy and switching  
times versus gate resistor  
80  
A
10  
diode  
IGBT  
K/W  
1
60  
ZthJC  
ICM  
0.1  
RG = 68 Ω  
40  
20  
0
T
VJ = 125°C  
0.01  
0.001  
single pulse  
FII30-12E  
0.0001  
0.00001 0.0001 0.001 0.01  
0.1  
1
s
10  
0
200 400 600 800 1000 1200  
VCE  
V
t
Fig. 11 Reversebiasedsafeoperatingarea  
RBSOA  
Fig. 12 Typ. transient thermal impedance  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2005 IXYS All rights reserved  
4 - 4  

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