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FMP76-010T [IXYS]

Trench P & N-Channel Power MOSFET Common Drain Topology; 海沟P＆ N沟道功率MOSFET漏极常见的拓扑
FMP76-010T
型号： FMP76-010T
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Trench P & N-Channel Power MOSFET Common Drain Topology
海沟P＆ N沟道功率MOSFET漏极常见的拓扑
文件： 总4页 (文件大小：106K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Advance Technical Information  
TrenchTM P & N-Channel  
Power MOSFET  
Common Drain Topology  
P CH.  
N CH.  
FMP76-010T  
VDSS  
ID25  
- 100V  
- 54A  
100V  
62A  
4
5
RDS(on)  
trr(typ)  
24mΩ  
11mΩ  
3
70ns  
67ns  
1
2
2
ISOPLUS i4-PakTM  
Symbol  
Test Conditions  
Maximum Ratings  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
1
VISOLD  
50/60HZ, RMS, t = 1min, leads-to-tab  
2500  
~V  
Isolated Tab  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
5
FC  
Mounting force  
20..120 / 4.5..27  
N/lb.  
Features  
z Silicon chip on Direct-Copper Bond  
(DCB) substrate  
- UL recognized package  
- Isolated mounting surface  
- 2500V electrical isolation  
z Avalanche rated  
z Low QG  
z Low Drain-to-Tab capacitance  
z Low package inductance  
Symbol  
CP  
Test Conditions  
Characteristic Values  
Min.  
Typ.  
Max.  
Coupling capacitance between shorted  
pins and mounting tab in the case  
40  
pF  
dS ,dA  
dS ,dA  
pin - pin  
pin - backside metal  
1.7  
5.5  
mm  
mm  
Weight  
9
g
Advantages  
P - CHANNEL  
z
Low gate drive requirement  
High power density  
Low drain to ground capacitance  
Fast switching  
z
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
z
TJ = 25°C to 150°C  
- 100  
- 100  
V
V
z
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
Applications  
z DC and AC motor drives  
z Class AB audio amplifiers  
z Multi-phase DC to DC converters  
z Industrial battery chargers  
z Switching power supplies  
ID25  
IDM  
TC = 25°C  
- 54  
A
A
TC = 25°C, pulse width limited by TJM  
- 230  
IA  
TC = 25°C  
TC = 25°C  
- 38  
1.0  
A
J
EAS  
PD  
TC = 25°C  
132  
W
DS100037(09/08)  
© 2008 IXYS CORPORATION, All rights reserved  
FMP76-010T  
ISOPLUS i4-PakTM Outline  
Symbol  
(TJ = 25°C unless otherwise specified)  
Test Conditions2  
Characteristic Values  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250 μA  
VDS = VGS, ID = - 250μA  
VGS = ±20 V, VDS = 0V  
VDS = VDSS, VGS = 0V  
- 100  
V
V
- 2.0  
- 4.0  
± 100 nA  
IDSS  
-15 μA  
TJ = 125°C  
- 750 μA  
RDS(on)  
gfs  
VGS = -10V, ID = - 38A, Note 1  
VDS = -10V, ID = - 38A, Note 1  
24 mΩ  
35  
58  
S
Ciss  
Coss  
Crss  
13.7  
nF  
pF  
pF  
VGS = 0V, VDS = - 25V, f = 1MHz  
890  
275  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
25  
40  
52  
20  
ns  
ns  
ns  
ns  
VGS = -10V, VDS = 0.5  
z
VDSS, ID = - 38A  
RG = 1Ω (External)  
Qg(on)  
Qgs  
197  
65  
nC  
nC  
nC  
VGS= -10V, VDS = 0.5 VDSS, ID = - 38A  
z
Ref: IXYS CO 0077 R0  
Qgd  
65  
RthJC  
RthCS  
0.95 °C/W  
°C/W  
0.15  
Drain-Source Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions2  
VGS = 0V  
Min. Typ.  
Max.  
- 54  
A
A
V
ISM  
Repetitive, pulse width limited by TJM  
IF = - 38A, VGS = 0V, Note 1  
- 304  
- 1.3  
VSD  
trr  
IF = - 38A, di/dt = 100A/μs  
70  
215  
- 6  
ns  
nC  
A
QRM  
IRM  
VR = - 50V, VGS = 0V  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
FMP76-010T  
N - CHANNEL  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
100  
100  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSM  
Transient  
± 20  
V
ID25  
IDM  
TC = 25°C  
62  
A
A
TC = 25°C, pulse width limited by TJM  
300  
IA  
EAS  
TC = 25°C  
TC = 25°C  
65  
500  
A
mJ  
PD  
TC = 25°C  
89  
W
Symbol  
Test Conditions2  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250 μA  
VDS = VGS, ID = 250μA  
VGS = ±20 V, VDS = 0V  
100  
V
V
2.5  
4.5  
± 200 nA  
μA  
250 μA  
11 mΩ  
S
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 150°C  
RDS(on)  
gfs  
VGS = 10V, ID = 25A, (Note 1)  
VDS = 10V, ID = 60A, (Note 1)  
55  
93  
Ciss  
Coss  
Crss  
5080  
635  
95  
pF  
pF  
pF  
VGS = 0V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
30  
47  
44  
28  
ns  
ns  
ns  
ns  
VGS = 10V, VDS = 0.5 VDSS, ID = 25A  
z
RG = 5Ω (External)  
Qg(on)  
Qgs  
104  
30  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5  
z
VDSS, ID = 25A  
Qgd  
29  
RthJC  
RthCS  
1.4 °C/W  
°C/W  
0.15  
© 2008 IXYS CORPORATION, All rights reserved  
FMP76-010T  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions3  
Min. Typ.  
Max.  
VGS = 0V  
62  
A
A
V
ISM  
Repetitive, pulse width limited by TJM  
IF = 25A, VGS = 0V, Note 1  
350  
1.0  
VSD  
trr  
QRM  
IRM  
67  
160  
4.7  
ns  
nC  
A
IF = 25A, -di/dt = 100A/μs  
VR = 50V, VGS = 0V  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experience,  
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  

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