G3000ZC250 [IXYS]

Gate Turn-Off SCR, 3270A I(T)RMS, 2500V V(DRM), 1800V V(RRM), 1 Element;


型号：	G3000ZC250
厂家：	IXYS CORPORATION
描述：	Gate Turn-Off SCR, 3270A I(T)RMS, 2500V V(DRM), 1800V V(RRM), 1 Element 栅栅极
文件：	总4页 (文件大小：193K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GATE CONTROLLED DEVICE - Gate Turn Off Thyristors - Capsule Type

V_GT

I_T(AV)

I_T(RMS)

t_gt@ I_GM

= I_TGQM

I_T

t_gq@ di_GQ/dt

I_T= I_TGQM

V_TM

I_T= I_TGQM

I_GT@

V_DRM

V_GK= -

I_TSM(1)

10ms

I_TSM(2)

2ms

t_on

(min)

t_off

(min)

Mounting

Force

I²t

25^oC

I_TGQM@ C_s

V_RRM

V_RGM

Rth j-hs

(K/W)

(g)

T_SINK= 55^oC T_SINK= 25^oC

25^oC

(Typ)

Old Part Number

New Part Number

Outline No.

(V)

(kA²s)

Note 4

(V)

(kN)

(A)

(mF)

(A)

(kA)

(A)

(V)

(ms)

(A)

(ms)

(A/ms)

(ms)

Notes 1&2

1200-2500

600-1800

600-1400

1200-2500

600-1800

600-1400

Note 2

Note 5

Note 3

Note 4

Note 7 Note 8

Note 6

80 x 10³

130 x 10³

150 x 10³

45 x 10³

80 x 10³

100 x 10³

WG5025Rx

WG6018Rx

WG9014Rx

WG5025FRx

WG6018FRx

WG9014FRx

S0500KC250

S0600KC180

S0900KC140

H0500KC250

H0600KC180

H0900KC140

100-2000

100-1400

100-1100

100-2000

100-1400

100-1100

500

600

900

500

600

900

1.5

330

430

445

280

360

370

640

870

890

540

700

730

7.2

2.5

2.1

2.3

3.2

2.6

3.0

1.0

1.5

0.8

0.4

0.8

20.0

10.0

20.0

10.0

90.0

70.0

75.0

60.0

45.0

50.0

0.065

0.063

0.065

0.063

120

45-90

5.5

9.8

5.4

7.2

8.1

101A296

1.5

4.5

125 x 10³

80 x 10³

WG10025SN

WG10045SN

G1000LC250

G1000NC450

101A288

Fig. 3

2500

4500

1800

1000

500

380

970

750

8.9

2.5

4.0

1.0

1.2

2.0

16.0

0.080

170

480

10-12

15-25

1.28 x 10⁶

0.85 x 10⁶

WG20025SN

WG20045SN

G2000LC250

G2000NC450

2500

4500

1800

2000

1020

870

2040

1730

2.8

3.5

2.5

1.0

5.0

8.0

5.0

8.0

24.0

25.0

0.027

800

17-24

Fig. 4

Fig. 5

Fig. 6

4.50 x 10⁶

2.88 x 10⁶

WG30025SN

WG30045SN

G3000ZC250

G3000ZC450

2500

4500

1800

3000

1640

1180

3270

2360

2.5

4.0

3.0

1.2

1.0

7.5

9.0

7.5

9.0

28.0

0.015

1500

1300

36-44

2.88 x 10⁶

3.1 x 10⁶

WG30060SN

WG40045SN

G3000ZC600

G4000EC450

6000

4500

1800

3000

4000

1100

1270

2300

2540

3.5

4.4

1.0

4.0

1.2

7.5

28.0

0.015

1500

36-44

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Limited. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

* These products, and their derivatives now undergoing obsolescence - please contact Factory for alternatives.

V_GT

I_T(AV)

I_T(RMS)

t_gt@ I_GM

I_T

t_gq@ di_GQ/dt

I_T= I_TGQM

V_TM

I_T= I_TGQM

I_GT@

V_DRM

V_GK= -

I_TSM(1)

10ms

I_TSM(2)

2ms

t_on

(min)

t_off

(min)

Mounting

Force

I²t

25^oC

I_TGQM@ C_s

(A) (mF)

V_RRM

V_GK

Rth j-hs

(K/W)

(g)

T_SINK= 55^oC T_CASE= 25^oC

25^oC

= I_TGQM

Part Number

OBSOLETE

New Part Number

(Not applicable)

(Typ)

Outline No.

(V)

Note 1

(V)

(A²s)

(V)

(kN)

(A)

(kA)

(A)

(V)

(ms)

(A)

(ms)

(A/ms)

(ms)

Note 1

Note 2

Note 5

Note 3

Note 4

Note 7 Note 8

Note 6

WG5045S

WG8045S

WG8060S

WG7025S

WG10025S

WG40045S

N/A

Not for new designs. Please refer to Factory for assistance.

Notes:

V_GK£ -2V.

Not applicable to this table.

Double side cooled, single phase; 50Hz, 180^osinewave.

T_j(initial)= 125^oC, single phase, 180^osinewave, re-applied voltage V_D= V_R£10V.

I_T= 3000A repetitive, I_GM= 30A, di_GM/dt = 20A/ms, for higher di/dt please consult Westcode Sales Office.

With RCD snumber, R = 5 ohms and C is the value as for I_TGQM

Does not include snubber discharge time; refers only to minimum time for whole device to be in conduction with anode current di/dt > 10A/ms

Minimum time to re-fire the device. The gate drive circuit may require a longer period of low impedance option to ensure full extraction of the tail current

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