GWM60-0055X-SL [IXYS]

Small Signal Field-Effect Transistor, 0.16A I(D), 55V, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;


型号：	GWM60-0055X-SL
厂家：	IXYS CORPORATION
描述：	Small Signal Field-Effect Transistor, 0.16A I(D), 55V, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 开关光电二极管晶体管
文件：	总3页 (文件大小：123K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Advanced Technical Information

GWM 160-0055X1

V_DSS

I_D25

= 55 V

= 160 A

Three phase full Bridge

with Trench MOSFETs

R_{DSon typ.}= 2.3 mW

in DCB isolated high current package

L+

Gꢀ

Sꢀ

Lꢀ

Surface Mount

Device

Bent leads

L-

Straight leads

Applications

MOSFETs

Symbol

V_DSS

AC drives

Conditions

Maximum Ratings

• in automobiles

- electric power steering

- starter generator

• in industrial vehicles

- propulsion drives

- fork lift drives

T_J= 25°C to ꢀ50°C

V_GS

I_D25

I_D90

T_C= 25°C

T_C= 90°C

ꢀ60

ꢀ20

• in battery supplied equipment

I_F25

I_F90

T_C= 25°C (diode)

T_C= 90°C (diode)

ꢀ35

Features

• MOSFETs in trench technology:

- low RDSon

- optimized intrinsic reverse diode

• package:

Symbol

Conditions

Characteristic Values

(T_J= 25°C, unless otherwise speciﬁed)

min. typ. max.

- high level of integration

- high current capability 300 A max.

- aux. terminals for MOSFET control

- terminals for soldering or welding

connections

- isolated DCB ceramic base plate

with optimized heat transfer

• Space and weight savings

R_DSon

on chip level at

V_GS= ꢀ0 V; I_D= ꢀ00 A

T_J= 25°C

T_J= ꢀ25°C

2.3

3.8

3.0

V_GS(th)

I_DSS

V_DS= 20 V; I_D= ꢀ mA

V_DS= V_DSS; V_GS= 0 V

2.5

4.5

ꢀ

T_J= 25°C

T_J= ꢀ25°C

µA

0.ꢀ

I_GSS

V_GS

20 V; V_DS= 0 V

0.2

µA

Q_g

Q_gs

Q_gd

ꢀꢀ4

Package options

V_GS= ꢀ0 V; V_DS= ꢀ2 V; I_D= ꢀ60 A

• 3 lead forms available

- straight leads (SL)

- SMD lead version (SMD)

- bent leads (BL)

t_d(on)

t_r

t_d(off)

t_f

tbd

inductive load

V_GS= ꢀ0 V; V_DS= 24 V

I_D= ꢀ00 A; R_G= 39 Ω;

T_J= ꢀ25°C

E_on

E_off

E_recoff

tbd

R_thJC

R_thJH

ꢀ)

0.9 K/W

K/W

with heat transfer paste

= I_D·(R_DS(on)+ 2R_{Pin to Chip})

ꢀ.2

IXYS reserves the right to change limits, test conditions and dimensions.

ꢀ - 3

Advanced Technical Information

GWM 160-0055X1

Source-Drain Diode

Symbol

Conditions

Characteristic Values

(T_J= 25°C, unless otherwise speciﬁed)

min. typ. max.

V_SD

(diode) I_F= ꢀ00 A; V_GS= 0 V

0.9

ꢀ.2

t_rr

Q_RM

I_RM

tbd

µC

I_F= ꢀ00 A; -di_F/dt = 800 A/µs; V_R= 24 V

Component

Symbol

I_RMS

Conditions

Maximum Ratings

per pin in main current paths (P+, N-, Lꢀ, L2, L3)

may be additionally limited by external connections

300

T_J

T_stg

-40...+ꢀ75

-55...+ꢀ25

°C

V_ISOL

F_C

I_ISOL< ꢀ mA, 50/60 Hz, f = ꢀ minute

mounting force with clip

ꢀ000

50 - 250

Symbol

Conditions

Characteristic Values

min. typ. max.

R_{pin to chip}

0.6

coupling capacity between shorted

pins and mounting tab in the case

ꢀ60

C_P

Weight

ꢀ)

= I_D·(R_DS(on)+ 2R_{Pin to Chip})

IXYS reserves the right to change limits, test conditions and dimensions.

2 - 3

Advanced Technical Information

GWM 160-0055X1

Straight Leads

GWM ꢀ60-0055Xꢀ-SL

Bent Leads

GWM ꢀ60-0055Xꢀ-BL

Gꢀ

L+

L-

L+

Sꢀ

L-

Lꢀ

Ordering Code &

Packing Unit Marking

Code

Key

Leads

Part Marking

Straight GWM ꢀ60-0055Xꢀ - SL

GWM ꢀ60-0055Xꢀ 505 230

Surface Mount Device

GWM ꢀ60-0055Xꢀ-SMD

SMD

Bent

GWM ꢀ60-0055Xꢀ - SMD GWM ꢀ60-0055Xꢀ 504 862

contact

GWM ꢀ60-0055Xꢀ - BL

GWM ꢀ60-0055Xꢀ

factory

Gꢀ

L+

L-

Sꢀ

Lꢀ

IXYS reserves the right to change limits, test conditions and dimensions.

3 - 3

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