GWM60-0055X-SMD [IXYS]
Small Signal Field-Effect Transistor, 0.16A I(D), 55V, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-17;型号: | GWM60-0055X-SMD |
厂家: | IXYS CORPORATION |
描述: | Small Signal Field-Effect Transistor, 0.16A I(D), 55V, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-17 开关 光电二极管 晶体管 |
文件: | 总3页 (文件大小:123K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Advanced Technical Information
GWM 160-0055X1
VDSS
ID25
= 55 V
= 160 A
Three phase full Bridge
with Trench MOSFETs
RDSon typ. = 2.3 mW
in DCB isolated high current package
L+
G3
G5
S5
Gꢀ
Sꢀ
S3
Lꢀ
L2
L3
Surface Mount
Device
Bent leads
G4
S4
G6
S6
G2
S2
L-
Straight leads
Applications
MOSFETs
Symbol
VDSS
AC drives
Conditions
Maximum Ratings
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
TJ = 25°C to ꢀ50°C
55
20
V
±
VGS
V
ID25
ID90
TC = 25°C
TC = 90°C
ꢀ60
ꢀ20
A
A
• in battery supplied equipment
IF25
IF90
TC = 25°C (diode)
TC = 90°C (diode)
ꢀ35
90
A
A
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
1)
RDSon
on chip level at
VGS = ꢀ0 V; ID = ꢀ00 A
TJ = 25°C
TJ = ꢀ25°C
2.3
3.8
3.0
mW
mW
VGS(th)
IDSS
VDS = 20 V; ID = ꢀ mA
VDS = VDSS; VGS = 0 V
2.5
4.5
ꢀ
V
TJ = 25°C
TJ = ꢀ25°C
µA
mA
0.ꢀ
±
IGSS
VGS
=
20 V; VDS = 0 V
0.2
µA
Qg
Qgs
Qgd
ꢀꢀ4
30
32
nC
nC
nC
Package options
VGS = ꢀ0 V; VDS = ꢀ2 V; ID = ꢀ60 A
• 3 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
- bent leads (BL)
td(on)
tr
td(off)
tf
tbd
tbd
tbd
tbd
ns
ns
ns
ns
inductive load
VGS = ꢀ0 V; VDS = 24 V
ID = ꢀ00 A; RG = 39 Ω;
TJ = ꢀ25°C
Eon
Eoff
Erecoff
tbd
tbd
tbd
mJ
mJ
mJ
RthJC
RthJH
ꢀ)
0.9 K/W
K/W
with heat transfer paste
= ID·(RDS(on) + 2RPin to Chip)
ꢀ.2
V
DS
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
ꢀ - 3
Advanced Technical Information
GWM 160-0055X1
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD
(diode) IF = ꢀ00 A; VGS = 0 V
0.9
ꢀ.2
V
trr
QRM
IRM
tbd
tbd
tbd
ns
µC
A
IF = ꢀ00 A; -diF/dt = 800 A/µs; VR = 24 V
Component
Symbol
IRMS
Conditions
Maximum Ratings
per pin in main current paths (P+, N-, Lꢀ, L2, L3)
may be additionally limited by external connections
300
A
TJ
Tstg
-40...+ꢀ75
-55...+ꢀ25
°C
°C
VISOL
FC
IISOL < ꢀ mA, 50/60 Hz, f = ꢀ minute
mounting force with clip
ꢀ000
V~
N
50 - 250
Symbol
Conditions
Characteristic Values
min. typ. max.
1)
Rpin to chip
0.6
mW
coupling capacity between shorted
pins and mounting tab in the case
ꢀ60
CP
pF
Weight
25
g
ꢀ)
V
= ID·(RDS(on) + 2RPin to Chip)
DS
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2 - 3
Advanced Technical Information
GWM 160-0055X1
Straight Leads
GWM ꢀ60-0055Xꢀ-SL
Bent Leads
GWM ꢀ60-0055Xꢀ-BL
Gꢀ
Gꢀ
L+
L-
L+
Sꢀ
G2
S2
Sꢀ
G2
L-
S2
G3
S3
G4
S4
G5
S5
G6
S6
G3
S3
G4
Lꢀ
S4
Lꢀ
L2
L3
G5
L2
S5
G6
L3
S6
Ordering Code &
Packing Unit Marking
Code
Key
Leads
Part Marking
Straight GWM ꢀ60-0055Xꢀ - SL
GWM ꢀ60-0055Xꢀ 505 230
Surface Mount Device
GWM ꢀ60-0055Xꢀ-SMD
SMD
Bent
GWM ꢀ60-0055Xꢀ - SMD GWM ꢀ60-0055Xꢀ 504 862
contact
GWM ꢀ60-0055Xꢀ - BL
GWM ꢀ60-0055Xꢀ
factory
Gꢀ
L+
L-
Sꢀ
G2
S2
G3
S3
G4
S4
G5
S5
G6
S6
Lꢀ
L2
L3
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
3 - 3
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