H0700KC17N [IXYS]

Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 595V V(RRM), 1 Element;


型号：	H0700KC17N
厂家：	IXYS CORPORATION
描述：	Symmetrical GTO SCR, 700A I(T)RMS, 1700V V(DRM), 595V V(RRM), 1 Element
文件：	总15页 (文件大小：319K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Date:- 16 Apr, 2004

Data Sheet Issue:- 1

WESTCODE

An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor

Type H0700KC17#

Absolute Maximum Ratings

MAXIMUM

UNITS

VOLTAGE RATINGS

LIMITS

1700

V_DRM

V_RSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage

1800

100-1360

Non-repetitive peak reverse voltage

MAXIMUM

LIMITS

UNITS

µH

RATINGS

I_TGQ

L_s

Peak turn-off current, (note 2)

Snubber loop inductance, I_TM=I_TGQ, (note 2)

700

0.3

360

700

7.2

I_T(AVM)

I_T(RMS)

I_TSM

I_TSM2

I²t

di/dt_cr

P_FGM

P_RGM

I_FGM

V_RGM

t_off

Mean on-state current, T_sink=55°C (note 3)

Nominal RMS on-state current, 25°C (note 3)

Peak non-repetitive surge current t_p=10ms

Peak non-repetitive surge current, (Note 4)

I²t capacity for fusing t_p=10ms

Critical rate of rise of on-state current, (note 5)

Peak forward gate power

Peak reverse gate power

A²s

A/µs

80×10³

1000

160

100

Peak forward gate current

Peak reverse gate voltage (note 6).

Minimum permissible off-time, I_TM=I_TGQ, (note 2)

Minimum permissible on-time

µs

t_on

T_j

T_stg

Operating temperature range

Storage temperature range

-40 to +125

-40 to +150

°C

Notes:-

1) V_GK=-2Volts.

2) T_j=125°C, V_D=80%V_DM, V_DM<V_DRM, di_GQ/dt=40A/µs, C_S=1.5µF.

3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.

4) Half-sinewave, t_p=2ms

5) For di/dt>1000A/µs, consult factory.

6) May exceed this value during turn-off avalanche period.

Data Sheet. Type H0700KC17# Issue 1

Page 1 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

Characteristics

UNITS

Parameter

Maximum peak on-state voltage

MIN

TYP MAX TEST CONDITIONS

V_TM

I_L

2.4

2.75 I_G=1.5A, I_T=700A

Latching current

T_j=25°C

I_H

Holding current.

T_j=25°C

dv/dt_crCritical rate of rise of off-state voltage

800

V_D=80%V_DRM, V_GR=-2V

Rated V_DRM, V_GR=-2V

Rated V_RRM

V/µs

I_DM

Peak off state current

I_RM

Peak reverse current

I_GKM

Peak negative gate leakage current

200 V_GR=-16V

0.9

0.8

0.7

2.5

0.4

T_j=-40°C

T_j=25°C

T_j=125°C

T_j=-40°C

V_GT

Gate trigger voltage

Gate trigger current

V_D=25V, R_L=25mΩ

I_GT

1.5 T_j=25°C

200 T_j=125°C

µs

V_D=50%V_DRM, I_TGQ=700A, I_GM=30A, di_G/dt=15A/µs

T_j=25°C, di/dt=300A/µs, (10%I_GMto 90%V_D)

Conditions as for t_d, (10%I_GMto 10%V_D)

V_D=50%V_DRM, I_TGQ=700A, C_S=1.5µF,

t_d

t_gt

t_f

Delay time

Turn-on time

Fall time

0.5

µs

0.5

di_GQ/dt=40A/µs, V_GR=-16V, (90%I_TGQto 10%I_TGQ

)

t_gq

Turn-off time

6.5 Conditions as for t_f, (10%I_GQto 10%I_TGQ

Conditions as for t_f

700 Conditions as for t_f

)

µs

I_gq

Turn-off gate current

Turn-off gate charge

Tail time

190

Q_gq

t_tail

t_gw

580

µC

µs

Conditions as for t_f, (10%I_TGQto I_TGQ<1A)

Conditions as for t_f

Gate off-time (see note 3).

µs

0.063 Double side cooled

0.21 Cathode side cooled

0.09 Anode side cooled

9.0 (see note 2)

K/W

R_thJK

Thermal resistance junction to sink

Mounting force

Weight

4.5

W_t

120

Notes:-

1) Unless otherwise indicated T_j=125^oC.

2) For other clamping forces, consult factory.

3) The gate off-time is the period during which the gate circuit is

required to remain low impedance to allow for the passage

of tail current.

Data Sheet. Type H0700KC17# Issue 1

Page 2 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

Notes on ratings and characteristics.

1. Maximum Ratings.

1.1 Off-state voltage ratings.

Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. For

other gate conditions see the curves of figure 5. It should be noted that V_DRMis the repeatable peak

voltage which may be applied to the device and does not relate to a DC operating condition. While not

given in the ratings, V_DCshould ideally be limited to 60% V_DRMin this product.

Diagram 1.

1.2 Reverse voltage rating.

All devices in this series have a minimum V_RRMof 100 Volts. If specified at the time of order, a V_RRMup to

80%V_DRMis available.

1.3 Peak turn-off current.

The figure given in maximum ratings is the highest value for normal operation of the device under

conditions given in note 2 of ratings. For other combinations of I_TGQ, V_Dand C_ssee the curves of figures

15 & 16. The curves are effective over the normal operating range of the device and assume a snubber

circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is

employed then the equivalent C_Sshould be used and L_s<0.3µH must be ensured for the curves to be

applied.

Diagram 2.

1.4 R.M.S and average current.

Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-

sinewave. These are included as a guide to compare the alternative types of GTO thyristors available,

values can not be applied to practical applications, as they do not include switching losses.

1.5 Surge rating and I²t.

Ratings are for half-sinewave, peak value against duration is given in the curve of figure 4.

1.6 Snubber loop inductance.

Use of GTO thyristors with snubber loop inductance, L_s<0.3µH implies no dangerous V_svoltages (see

diagrams 2 & 3) can be applied, provided the other conditions given in note 1.3 are enforced. Alternatively

V_sshould be limited to 600 Volts to avoid possible device failure.

Data Sheet. Type H0700KC17# Issue 1

Page 3 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

1.7 Critical rate of rise of on-state current

The value given is the maximum repetitive rating, but does not imply any specific operating condition. The

high turn-on losses associated with limit di/dt would not allow for practical duty cycle at this maximum

condition. For special pulse applications, such as crowbars and pulse power supplies, a much higher di/dt

is possible. Where the device is required to operate with infrequent high current pulses, with natural

commutation (i.e. not gate turn-off), then di/dt>5kA/µs is possible. For this type of operation individual

specific evaluation is required.

1.8 Gate ratings

The absolute conditions above which the gate may be damaged. It is permitted to allow V_GK(AV)during turn-

off (see diagram 10) to exceed V_RGMwhich is the implied DC condition.

1.9 Minimum permissible off time.

This time relates specifically to re-firing of device (see also note on gate-off time 2.7). The value given in

the ratings applies only to operating conditions of ratings note 2. For other operating conditions see the

curves of figure 18.

1.10 Minimum permissible on-time.

Figure is given for minimum time to allow complete conduction of all the GTO thyristor islands. Where a

simple snubber, of the form given in diagram 1. (or any other non-energy recovery type which discharges

through the GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time

constant, which must be allowed to fully discharge before the GTO thyristor is turned off. If the anode

circuit has di/dt<10A/µs then the minimum on-time should be increased, the actual value will depend upon

the di/dt and operating conditions (each case needs to be assessed on an individual basis).

Data Sheet. Type H0700KC17# Issue 1

Page 4 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

2 Characteristics

2.1 Instantaneous on-state voltage

Measured using a 500µs square pulse, see also the curves of figure 2 for other values of I_TM.

2.2 Latching and holding current

These are considered to be approximately equal and only the latching current is measured, type test only

as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is

monitored on an oscilloscope while V_Dis increased, until the current is seen to flow during the un-gated

period between the end of I_Gand the application of reverse gate voltage. Test frequency is 100Hz with I_GM

& I_Gas for t_dof characteristic data.

I_G

100µs

I_GM

Gate current

16V

100µs

Anode current

unlatched condition

Unlatched

Latched

Anode current

Latched condition

DUT

Gate-drive

Diagram 4, Latching test circuit and waveforms.

2.3 Critical dv/dt

The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to

dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as

shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is

open circuit or R_GKis high impedance. Typical values: - dv/dt<30V/µs for R_GK>10Ω.

Diagram 5, Definition of dV/dt.

2.4 Off-state leakage.

For I_DRM& I_RRMsee notes 1.1 & 1.2 for gate leakage I_GK, the off-state gate circuit is required to sink this

leakage and still maintain minimum of –2 Volts. See diagram 6.

Diagram 6.

Data Sheet. Type H0700KC17# Issue 1

Page 5 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

2.5 Gate trigger characteristics.

These are measured by slowly ramping up the gate current and monitoring the transition of anode current

and voltage (see diagram 7). Maximum and typical data of gate trigger current, for the full junction

temperature range, is given in the curves of figure 6. Only typical figures are given for gate trigger voltage,

however, the curves of figure 1 give the range of gate forward characteristics, for the full allowable

junction temperature range. The curves of figures 1 & 6 should be used in conjunction, when considering

forward gate drive circuit requirement. The gate drive requirements should always be calculated for lowest

junction temperature start-up condition.

Feedback

Anode current

0.9V_AK

Not to scale

Current-

sence

Gate current

0.1I_A

I_GT

Anode-Cathode

Voltage

DUT

Gate-drive

Diagram 7, Gate trigger circuit and waveforms.

2.6 Turn-on characteristics

The basic circuit used for turn-on tests is given in diagram 8. The test is initiated by establishing a

circulating current in T_x, resulting in V_Dappearing across C_c/L_c. When the test device is fired C_c/L_c

discharges through DUT and commutates T_xoff, as pulse from C_c/L_cdecays the constant current source

continues to supply a fixed current to DUT. Changing value of C_c& L_callows adjustment of I_TMand di/dt

respectively, V_Dand i are also adjustable.

DUT

Gate-drive

Diagram 8, Turn-on test circuit of FT40.

The definitions of turn-on parameters used in the characteristic data are given in diagram 9. The gate

circuit conditions I_GM& I_Gare fully adjustable, I_GMduration 10µs.

di_G/dt

I_G

I_GM

t_d

t_r

di/dt

I_TM

V_D

V_D=V_DM

t_gt

E_onintegral

period

Diagram 9, Turn-on wave-diagrams.

Data Sheet. Type H0700KC17# Issue 1

Page 6 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

In addition to the turn-on time figures given in the characteristics data, the curves of figure 9 give the

relationship of t_gtto di/dt and I_GM. The data in the curves of figures 7 & 8, gives the turn-on losses both with

and without snubber discharge, a snubber of the form given in diagram 2 is assumed. Only typical losses

are given due to the large number of variables which effect E_on. It is unlikely that all negative aspects

would appear in any one application, so typical figures can be considered as worst case. Where the turn-

on loss is higher than the figure given it will in most cases be compensated by reduced turn-off losses, as

variations in processing inversely effect many parameters. For a worst case device, which would also

have the lowest turn-off losses, E_onwould be 1.5x values given in the curves of figures 7 & 8. Turn-on

losses are measured over the integral period specified below:-

10µs

Eon = iv.dt

∫

The turn-on loss can be sub-divided into two component parts, firstly that associated with t_gtand secondly

the contribution of the voltage tail. For this series of devices t_gtcontributes 50% and the voltage tail 50%

(These figures are approximate and are influenced by several second order effects). The loss during t_gtis

greatly affected by gate current and as with turn-on time (figure 9), it can be reduced by increasing I_GM

The turn-on loss associated with the voltage tail is not effected by the gate conditions and can only be

reduced by limiting di/dt, where appropriate a turn-on snubber should be used. In applications where the

snubber is discharged through the GTO thyristor at turn-on, selection of discharge resistor will effect E_on.

The curves of figure 8 are given for a snubber as shown in diagram 2, with R=5Ω, this is the lowest

recommended value giving the highest E_on, higher values will reduce E_on.

2.7 Turn-off characteristics

The basic circuit used for the turn-off test is given in diagram 10. Prior to the negative gate pulse being

applied constant current, equivalent to I_TGQ, is established in the DUT. The switch S_xis opened just before

DUT is gated off with a reverse gate pulse as specified in the characteristic/data curves. After the period

t_gtvoltage rises across the DUT, dv/dt being limited by the snubber circuit. Voltage will continue to rise

across DUT until D_cturns-on at a voltage set by the active clamp C_c, the voltage will be held at this value

until energy stored in L_xis depleted, after which it will fall to V_DC.The value of L_xis selected to give

required V_DOver the full tail time period. The overshoot voltage V_DMis derived from L_cand forward voltage

characteristic of D_C, typically V_DM=1.2V_Dto 1.5V_Ddepending on test settings. The gate is held reverse

biased through a low impedance circuit until the tail current is fully extinguished.

L_c

D_c

S_x

R_L

R_s

L_x

C_c

V_d

V_c

D_s

D_X

C_d

C_s

DUT

Gate-

drive

RCD snubber

Diagram 10, Turn-off test circuit.

The definitions of turn-off parameters used in the characteristic data are given in diagram 11.

Data Sheet. Type H0700KC17# Issue 1

Page 7 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

t_gq

t_f

0.9

V_DM

I_TGQ

V_D

0.1

V_GR

V_GQ

Q_GQ

V_G(AV)

I_GQ

t_gw

Diagram 11, Turn-off parameter definitions.

In addition to the turn-off figures given in characteristic data, the curves of figures 10, 11 & 12 give the

relationship of I_GQQ_GQand t_gqto turn-off current (I_TGQ) and di_GQ/dt. Only typical values of I_GQare given due

to a great dependence upon the gate circuit impedance, which is a function of gate drive design not the

device. The t_gqis also, to a lesser extent, affected by circuit impedance and as such the maximum figures

given in data assume a good low impedance circuit design. The curves of figures 17 & 18 give the tail time

and minimum off time to re-fire device as a function of turn-off current. The minimum off time to re-fire the

device is distinct from t_gw, the gate off time given in characteristics. The GTO thyristor may be safely re-

triggered when a small amount of tail current is still flowing. In contrast, the gate circuit must remain low

impedance until the tail current has fallen to zero or below a level which the higher impedance V_GRcircuit

can sink without being pulled down below –2 Volts. If the gate circuit is to be switched to a higher

impedance before the tail current has reached zero then the requirements of diagram 12 must be applied.

i_tail

(V_GR- i_tailR)>2V

Diagram 12.

V_GR

The figure t_gw, as given in the characteristic data, is the maximum time required for the tail current to

decay to zero. The figure is applicable under all normal operating conditions for the device; provided

suitable gate drive is employed. At lower turn-off current, or with special gate drive considerations, this

time may be reduced (each case needs to be considered individually).Typical turn-off losses are given in

the curves of figures 13 & 14, the integration period for the losses is nominally taken to the end of the tail

time (I_tail<1A) i.e. :-

tgt+ttail

Eoff =

iv.dt.

∫

Data Sheet. Type H0700KC17# Issue 1

Page 8 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

The curves of figure 13 give the turn-off energy for a fixed V_Dwith a V_DM=120%V_D, whereas the curves of

figure 14 give the turn-off energy with a fixed value of V_DMand V_D=50%V_DRM. The curves are for energy

against turn-off current/snubber capacitance with a correction for voltage inset as an additional graph

(snubber equivalent to diagram 2 is assumed). From these curves a typical value of turn-off energy for any

combination of I_TGQ/C_sand V_Dor V_DMcan be derived. Only typical data is included, to allow for the trade-

off with on-state voltage (V_TM) which is a feature of these devices, see diagram 13. When calculating

losses in an application, the use of a maximum V_TMand typical E_offwill (under normal operating

frequencies) give a more realistic value. The lowest V_TMdevice of this type would have a maximum turn-

off energy of 1.5x the figure given in the curves of figures 13 & 14.

Trade-off between V & E_off

E_off

Diagram 13.

2.8 Safe turn-off periphery

The necessity to control dv/dt at tun-off for the GTO thyristor implies a trade-off between I_TGQ/V_DM/C_s. This

information is given in the curves of figures 15 & 16. The information in these curves should be

considered as maximum limits and not implied operating conditions, some margin of 'safety' is advised

with the conditions of the curves reserved for occasional excursions. It should be noted that these curves

are derived at maximum junction temperature, however, they may be applied across the full operating

temperature range of the device provided additional precautions are taken. At very low temperature,

(below –10°C) the fall-time of device becomes very rapid and can give rise to very high turn-off voltage

spikes, as such it is advisable to reduce snubber loop inductance to <0.2µH to minimise this effect.

Data Sheet. Type H0700KC17# Issue 1

Page 9 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

Curves

Figure 1 – Forward gate characteristics

Figure 2 - On-state characteristics of Limit device

1000

10000

H0700KC17#

Issue 1

For T_j= -40^oC to +125^oC

100

1000

T_j=125^oC

T_j=25^oC

Minimum

Maximum

100

0.5

1.5

Instantaneous forward gate voltage, V_FG(V)

Instantaneous on-state voltage, V_T(V)

Figure 3 - Maximum surge and I²t Ratings

100000

1.00E+06

1.00E+05

1.00E+04

H0700KC17#

I²t: V_RRM≤10V

Issue 1

T_j(initial) = 125°C

I²t: 60% V_RRM

10000

I_TSM: V_RRM≤10V

I_TSM: 60% V_RRM

1000

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Data Sheet. Type H0700KC17# Issue 1

Page 10 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

Figure 5 – Typical forward blocking voltage Vs.

external gate-cathode resistance

Figure 4 – Transient thermal impedance

1.2

H0700KC17#

Issue 1

T_j=25^oC

CATHODE

ANODE

T_j=100^oC

0.1

0.8

DOUBLE-SIDE

0.6

0.4

0.01

T_j=125^oC

0.2

R_GK

0.001

0.01

0.1

TIME, (S)

100

1000

EXTERNAL GATE-CATHODE RESISTANCE, R_GK(OHMS)

Figure 7 – Typical turn-on energy per pulse

(excluding snubber discharge)

Figure 6 – Gate trigger current

H0700KC17#

Issue 1

V_D=0.5V_DRM

di/dt=500A/µs

I_GM=30A, di_G/dt=15A/µs

T_j=25^oC

di/dt=300A/µs

di/dt=100A/µs

MAXIMUM

0.1

TYPICAL

125

0.01

300

600

900

1200

-50

-25

100

150

TURN-ON CURRENT, I_TM(A)

JUNCTION TEMPERATURE, T_j(°C)

Data Sheet. Type H0700KC17# Issue 1

Page 11 of 15

April, 2004

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Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

Figure 8 – Typical turn-on energy per pulse

(including snubber discharge)

Figure 9 – Maximum turn-on time

200

H0700KC17#

Issue 1

V_D=0.5V_DRM

V_D=0.5V_DRM, I_TGQ=600A

t_rof I_GM≤ 2µs

I_GM=30A, di_G/dt=15A/µs

C_s=1.5µF, R_s=5W

T_j=25^oC

di/dt=500A/µs

I_GM=30A

150

100

di/dt=300A/µs

di/dt=100A/µs

I_GM=40A

I_GM=50A

300

600

900

1200

100

1000

RATE OF RISE OF ON-STATE CURRENT, di/dt (A/ µs)

TURN-ON CURRENT, I_TM(A)

Figure 10 – Typical peak turn-off gate current

Figure 11 – Maximum gate turn-off charge

1.2

250

H0700KC17#

Issue 1

V_D=0.8V_DRM

T_j=125^oC

V_D=0.8V_DRM

T_j=125^oC

di_GQ/dt=50A/µs

di_GQ/dt=40A/µs

0.8

0.6

0.4

0.2

di_GQ/dt=20A/µs

di_GQ/dt=30A/µs

200

150

100

di_GQ/dt=30A/µs

di_GQ/dt=40A/µs

di_GQ/dt=50A/µs

Q_GQ

200

400

600

800

1000

200

400

600

800

1000

TURN-OFF CURRENT, I_T(A)

TURN-OFF CURRENT, I_TGQ(A)

Data Sheet. Type H0700KC17# Issue 1

Page 12 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

Figure 12 – Maximum turn-off time

Figure 13 – Turn-off energy per pulse

0.4

H0700KC17#

Issue 1

V_D=800V, V_DM=1.2V_D

C_S=3µF

C_S=2µF

C_S=1.5µF

C_S=1µF

H0700KC17#

Issue 1

V_D=0.8V_DR

T_j=125^o

di_GQ/dt=20A/µs

di_GQ/dt=40A/µs

≤

L_s0.3µH

T_j=125^oC

0.3

0.2

0.1

C_S=0.5µF

V_DM

V_D

di_GQ/dt=30A/µs

di_GQ/dt=40A/µs

di_GQ/dt=50A/µ

For other values

of V_Dscale E_off

Note:V_DMV_DRM

≤

200

800

1400

V_D

200

400

600

800

1000

200

400

600

800

1000

TURN-OFF CURRENT, I_TGQ(A)

Figure 14 – Typical turn-off energy per pulse

Figure 15 – Maximum permissible turn-off current

0.5

H0700KC17#

Issue 1

V_D=0.8V_DRM

V_DM=1200V, V_D=0.5V_DRM

di_GQ/dt=40A/µs

L_s≤0.3µH

V_D=0.65V_DRM

di_GQ/dt=40A/µs

≤

V_D0.5V_DRM

T_j=125^oC

L_s≤0.3µH

T_j=125^oC

2.5

C_s=1µF C_s=1.5µF C_s=2µF C_s=3µF

C_s=0.5µF

0.4

0.3

0.2

0.1

_DM≤1.2V_D

V_D

Note: V_DM≤V_DRM

V_DM

V_D

1.5

For other values of V_DMscale E_off

1.5

0.5

600

1200

1800

0.5

V_DM

200

400

600

800

1000

200

400

600

800

1000

TURN-OFF CURRENT, I_TGQ(A)

Data Sheet. Type H0700KC17# Issue 1

Page 13 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

Figure 16 – Maximum turn-off current

Figure 17 – Maximum tail time

1000

H0700KC17#

_DM≤1.2V_D

Issue 1

V_D

C_s=3µF

V_D=0.8V_DRM

T_j=125^oC

C_s=2.2µF

800

C_s=1.5µF

C_s=1µF

600

C_s=0.5µF

400

200

di_GQ/dt=40A/µs

L_s≤0.3µH

T_j=125^oC

H0700KC17#

Issue 1

0.2

0.4

0.6

0.8

200

400

600

800

1000

TURN-OFF VOLTAGE AS THE RATIO V_D/V_DRM

TURN-OFF CURRENT, I_TGQ(A)

Figure 18 – Minimum off-time to re-fire device

H0700KC17#

Issue 1

V_D=0.8V_DRM

T_j=125^oC

di_GQ/dt=20A/µs

di_GQ/dt=30A/µs

di_GQ/dt=50A/µs

200

400

600

800

1000

TURN-OFF CURRENT, I_TGQ(A)

Data Sheet. Type H0700KC17# Issue 1

Page 14 of 15

April, 2004

WESTCODE An IXYS Company

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC17#

Outline Drawing & Ordering Information

101A287

ORDERING INFORMATION

(Please quote 10 digit code as below)

H0700

♦ ♦

Fixed

Fixed Voltage Code

V_RRMCode as % of V_DRM

D=80, E=75, F=70, G=65,H=60, J=55, K=50,

L=45, M=40, N=35, P=30, R=25, S=20, T=15,

V=10, W=5

Type Code

Outline Code

V_DRM/100

Typical order code: H0700KC17G – 1700V V_DRM, V_RRM=65%V_DRM(1105V), 16.5mm clamp height capsule.

IXYS Semiconductor GmbH

Edisonstraße 15

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

Tel: +44 (0)1249 444524

D-68623 Lampertheim

Tel: +49 6206 503-0

WESTCODE

An IXYS Company

Fax: +49 6206 503-627

E-mail: marcom@ixys.de

Fax: +44 (0)1249 659448

E-mail: WSL.sales@westcode,com

IXYS Corporation

Westcode Semiconductors Inc

3270 Cherry Avenue

3540 Bassett Street

www.westcode.com

www.ixys.com

Santa Clara CA 95054 USA

Tel: +1 (408) 982 0700

Fax: +1 (408) 496 0670

E-mail: sales@ixys.net

Long Beach CA 90807 USA

Tel: +1 (562) 595 6971

Fax: +1 (562) 595 8182

E-mail: WSI.sales@westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed

except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject

to the conditions and limits contained in this report.

Data Sheet. Type H0700KC17# Issue 1

Page 15 of 15

April, 2004

H0700KC17N [IXYS]

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