IXA33IF1200HB [IXYS]
XPT IGBT; XPT IGBT
| 型号： | IXA33IF1200HB |
| 厂家： | 
IXYS CORPORATION |
| 描述： | XPT IGBT |
| 文件： | 总6页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXA33IF1200HB
VCES
IC25
=
=
=
1200V
58A
XPT IGBT
VCE(sat)
1.8V
Copack
Part number
IXA33IF1200HB
Backside: collector
2 (C)
(G) 1
3 (E)
TO-247
Package:
Features / Advantages:
Applications:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
● AC motor drives
● Solar inverter
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
● Inductive heating, cookers
● Pumps, Fans
- fast and soft reverse recovery
- low operating forward voltage
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20100702b
© 2010 IXYS all rights reserved
IXA33IF1200HB
Ratings
IGBT
Symbol
VCES
Definition
collector emitter voltage
Conditions
min. typ. max. Unit
TVJ
=
25°C
1200
±20
±30
58
V
V
V
A
A
W
V
V
V
max. DC gate voltage
VGES
VGEM
IC25
max. transient gate emitter voltage
collector current
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
IC
34
80
total power dissipation
P
tot
250
2.1
collector emitter saturation voltage
VCE(sat)
IC = 25A; V = 15 V
1.8
2.1
5.9
GE
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 1mA; VGE = VCE
5.4
6.5
VCE = VCES; V = 0 V
0.1 mA
mA
GE
0.1
gate emitter leakage current
total gate charge
IGES
VGE = ±20 V
500
nA
nC
ns
QG(on)
td(on)
tr
VCE = 600 V; V = 15 V; IC = 25 A
76
70
GE
turn-on delay time
current rise time
40
ns
inductive load
VCE 600V; IC = 25A
TVJ = 125°C
turn-off delay time
td(off)
t f
250
100
2.5
3
ns
=
current fall time
ns
VGE = ±15 V; RG= 39 Ω
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Eon
mJ
mJ
Eoff
RBSOA
ICM
VGE = ±15 V; RG= 39 Ω
VCEmax = 1200V
TVJ = 125°C
TVJ = 125°C
A
75
10
short circuit safe operating area
short circuit duration
SCSOA
tSC
VCEmax = 900V
VCE = 900V; VGE = ±15 V
RG = 39Ω; non-repetitive
µs
A
short circuit current
ISC
100
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
0.5 K/W
K/W
0.25
Diode
VRRM
IF25
max. repetitive reverse voltage
forward current
TVJ = 25°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
1200
V
A
60
33
IF80
A
forward voltage
VF
IF = 30A
VR = VRRM
2.20
V
1.95
V
reverse current
IR
*
mA
mA
µC
A
* not applicable, see Ices value above
reverse recovery charge
*
3.5
30
Qrr
VR = 600 V
max. reverse recovery current
reverse recovery time
IRM
-diF /dt = -600 A/µs
TVJ = 125°C
trr
350
0.9
ns
mJ
IF = 30A; V = 0 V
GE
reverse recovery energy
Erec
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
0.7 K/W
K/W
0.25
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20100702b
© 2010 IXYS all rights reserved
IXA33IF1200HB
Ratings
Package TO-247
Symbol
IRMS
Definition
Conditions
per terminal
min. typ. max.
70
150
Unit
A
°C
°C
°C
g
RMS current
TVJ
-40
-40
-40
virtual junction temperature
operation temperature
storage temperature
125
150
Top
Tstg
Weight
6
MD
0.8
20
1.2 Nm
120
mounting torque
F
N
mounting force with clip
C
Product Marking
Part number
I = IGBT
X = XPT IGBT
A = Gen 1 / std
33 = Current Rating [A]
IF = Copack
1200 = Reverse Voltage [V]
HB = TO-247AD (3)
Logo
IXYS
XXXXXXXXX
Zyyww
Part No.
Assembly Line
abcd
Assembly Code
Date Code
Ordering
Standard
Part Number
IXA33IF1200HB
Marking on Product
IXA33IF1200HB
Delivery Mode
Tube
Quantity Code No.
30
508562
TVJ = 150°C
* on die level
Equivalent Circuits for Simulation
IGBT
Diode
V0
I
R0
threshold voltage
slope resistance *
V0 max
R0 max
1.1
55
1.25
28.3
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20100702b
© 2010 IXYS all rights reserved
IXA33IF1200HB
Outlines TO-247
A
D2
E
A2
Ø P1
Ø P
Sym.
Inches
min. max.
Millimeter
S
Q
min.
4.70
2.21
1.50
max.
A
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
5.30
2.59
2.49
A1
A2
D
E
E2
e
D1
D
20.79 21.45
15.48 16.24
2x E2
L1
4
4.31
5.48
5.46 BSC
19.80 20.30
1
2
3
L
0.780 0.800
L1
Ø P
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
-
0.177
-
4.49
3.65
6.19
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
3.55
5.38
E1
6.14 BSC
L
0.99
1.65
2.59
0.38
13.07
0.51
13.45
-
1.40
2.39
3.43
0.89
-
1.35
-
2x b2
0.515
-
C
3x b
0.020 0.053
b4
A1
0.530
-
-
0.29
7.39
2x e
2 (C)
(G) 1
3 (E)
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20100702b
© 2010 IXYS all rights reserved
IXA33IF1200HB
IGBT
50
50
40
30
20
10
0
13 V
VGE = 15 V
VGE = 15 V
17 V
19 V
11 V
40
TVJ = 125°C
30
IC
IC
TVJ = 25°C
TVJ = 125°C
[A]
20
[A]
9 V
10
0
0
1
2
3
0
1
2
3
4
5
VCE [V]
VCE [V]
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
20
15
10
5
50
40
IC
= 25 A
VCE = 600 V
30
IC
VGE
[A]
20
[V]
TVJ = 125°C
TVJ = 25°C
10
0
0
0
20
40
60
80
100
5
6
7
8
9
10 11 12 13
QG [nC]
VGE [V]
Fig. 3 Typ. tranfer characteristics
Fig. 4 Typ. turn-on gate charge
4
3
2
1
Eon
Eon
IC
CE = 600 V
VGE 15 V
VJ = 125°C
=
25 A
RG
CE = 600 V
VGE 15 V
=
39
6
5
V
V
=
=
T
TVJ = 125°C
Eoff
Eoff
4
E
E
3
[mJ]
[mJ]
2
1
0
0
10
20
30
IC [A]
Fig. 5 Typ. switching energy vs. collector current
40
50
40
60
80 100 120 140
RG [ ]
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20100702b
© 2010 IXYS all rights reserved
IXA33IF1200HB
Diode
60
7
6
5
4
3
2
1
TVJ = 125°C
VR = 600 V
50
60 A
40
IF
Qrr
30
30 A
15 A
[A]
[µC]
20
TVJ = 125°C
TVJ
=
25°C
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
300 400 500 600 700 800 900 1000 1100
VF [V]
diF /dt [A/µs]
Fig. 7 Typ. Forward current versus VF
Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt
70
60
50
700
600
TVJ = 125°C
VR = 600 V
TVJ = 125°C
VR = 600 V
60 A
500
400
300
200
100
0
30 A
15 A
IRR
trr
40
[A]
30
[ns]
60 A
30 A
15 A
20
10
0
300 400 500 600 700 800 900 1000 1100
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
diF /dt [A/µs]
Fig. 9 Typ. peak reverse current IRM vs. di/dt
Fig. 10 Typ. recovery time trr versus di/dt
1
2.0
TVJ = 125°C
VR = 600 V
Diode
1.6
1.2
0.8
0.4
0.0
60 A
30 A
IGBT
Erec
ZthJC
[mJ]
[K/W]
Inverter-IGBT Inverter-FRD
Ri ti Ri ti
0.116 0.0006 0.16 0.0005
0.1 0.2 0.12 0.004
0.112 0.006 0.15 0.02
15 A
1
2
3
4
0.172 0.05
0.27 0.15
0.1
0.001
0.01
0.1
tp [s]
1
10
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
Fig. 12 Typ. transient thermal impedance
Fig.11 Typ. recovery energy Erec versus di/dt
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20100702b
© 2010 IXYS all rights reserved
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明