IXBH2N250 [IXYS]
Insulated Gate Bipolar Transistor, 5A I(C), 2500V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN;
| 型号： | IXBH2N250 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 5A I(C), 2500V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN 局域网 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总5页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
High Voltage, High Gain
VCES = 2500V
IC110 = 2A
IXBH2N250
IXBT2N250
BIMOSFETTM
VCE(sat) 3.80V
Monolithic Bipolar MOS
Transistor
TO-268 (IXBT)
G
E
Symbol
VCES
Test Conditions
Maximum Ratings
C (Tab)
TC = 25°C to 150°C
2500
2500
V
V
VCGR
TJ = 25°C to 150°C, RGE = 1M
TO-247 (IXBH)
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
IC25
IC110
ICM
TC = 25°C
5
2
A
A
A
G
TC = 110°C
TC = 25°C, 1ms
C
C (Tab)
E
13
SSOA
(RBSOA)
PC
VGE = 15V, TVJ = 125°C, RG = 47
Clamped Inductive Load
TC = 25°C
ICM = 6
VCE 2000
32
A
V
G = Gate
S = Source
D
= Drain
Tab = Drain
W
G = Gate
E = Emitter
C
= Collector
TJ
-55 ... +150
150
°C
°C
°C
Tab = Collector
TJM
Tstg
-55 ... +150
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
High Blocking Voltage
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in
Integrated Anti-parallel Diode
International Standard Packages
Low Conduction Losses
Weight
TO-247
TO-268
6
4
g
g
Advantages
Symbol
Test Conditions
Characteristic Values
Low Gate Drive Requirement
High Power Density
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVCES
IC = 250μA, VCE = VGE
2500
V
V
VGE(th)
ICES
IC = 250μA, VCE = VGE
VCE = 0.8 • VCES, VGE = 0V
3.0
5.5
Applications
10 A
TJ = 125C
TJ = 125C
100 μA
Switched-Mode and Resonant-Mode
Power Supplies
IGES
VCE = 0V, VGE = 20V
100 nA
Uninterruptible Power Supplies (UPS)
Laser Generator
VCE(sat)
IC = 2A, VGE = 15V, Note 1
3.15
4.08
3.80
V
V
Capacitor Discharge Circuit
AC Switches
© 2017 IXYS CORPORATION, All Rights Reserved
DS100160A(8/17)
IXBH2N250
IXBT2N250
Symbol
Test Conditions
Characteristic Values
TO-268 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfS
IC = 2A, VCE = 10V, Note 1
0.85
1.40
S
Cies
Coes
Cres
145
8.7
3.2
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg
10.6
0.8
nC
nC
nC
Qge
Qgc
IC = 2A, VGE = 15V, VCE = 1kV
Pins: 1 - Gate
2,4 - Collector
3 - Emitter
6.2
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
30
180
70
ns
ns
ns
ns
Resistive Switching times, TJ = 25°C
IC = 2A, VGE = 15V
VCE = 2kV, RG = 47
182
30
280
74
ns
ns
ns
ns
Resistive Switching times, TJ = 125°C
IC = 2A, VGE = 15V
VCE = 2kV, RG = 47
178
RthJC
RthCS
3.90 °C/W
°C/W
0.21
TO-247 Outline
Reverse Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 2A, VGE = 0V, Note 1
2.4
V
μs
A
Pins: 1 - Gate
2,4 - Collector
3 - Emitter
trr
0.92
9.80
4.50
IF = 2A, VGE = 0V, -diF/dt = 100A/μs
IRM
QRM
VR = 100V, VGE = 0V
μC
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXBH2N250
IXBT2N250
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
28
24
20
16
12
8
V
= 25V
V
= 25V
GE
GE
20V
15V
20V
15V
10V
10V
4
5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
25
3
4
8
12
16
20
24
28
32
150
11
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 25V
GE
20V
15V
V
= 15V
GE
I
= 4A
C
I
= 2A
C
10V
I
= 1A
C
5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
50
75
100
125
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
9
8
7
6
5
4
3
2
1
0
T
J
= 25oC
T
J
= - 40oC
25oC
125oC
I C = 4A
2A
1A
4
5
6
7
8
9
10
5
7
9
11
13
15
17
19
21
23
25
VGE - Volts
VGE - Volts
© 2017 IXYS CORPORATION, All Rights Reserved
IXBH2N250
IXBT2N250
Fig. 8. Forward Voltage Drop of Intrinsic Diode
Fig. 7. Transconductance
2.4
2
6
5
4
3
2
1
0
T
J
= - 40oC
25oC
1.6
1.2
0.8
0.4
0
125oC
T
J
= 25oC
T
J
= 125oC
0
1
2
3
4
5
6
7
8
9
0
0.4
0.8
1.2
1.6
2
2.4
2.8
40
1
VF - Volts
IC - Amperes
Fig. 9. Gate Charge
Fig. 10. Capacitance
16
14
12
10
8
1,000
100
10
f = 1 MHz
V
= 1kV
CE
I
I
= 2A
C
G
= 1mA
C
ies
C
C
oes
6
4
2
res
0
1
0
1
2
3
4
5
6
7
8
9
10
11
0
5
10
15
20
25
30
35
VCE - Volts
QG - NanoCoulombs
Fig. 11. Reverse-Bias Safe Operating Area
Fig. 12. Maximum Transient Thermal Impedance
7
6
5
4
3
2
1
0
10
1
0.1
T
J
= 125oC
R
G
= 47Ω
dv / dt < 10V / ns
0.01
500
750
1000
1250
1500
1750
2000
2250
2500
0.00001
0.0001
0.001
0.01
0.1
VCE - Volts
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBH2N250
IXBT2N250
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
400
350
300
250
200
150
100
50
450
400
350
300
250
200
150
100
50
R
= 47Ω, V = 15V
GE
G
R
= 47Ω, V = 15V
GE
G
V
= 2KV
CE
V
= 2KV
CE
T = 125oC
J
I
= 2A
C
I
= 4A
C
T = 25oC
J
0
25
40
1.0
35
45
55
65
75
85
95
105
115
125
1.0
1.5
2.0
2.5
3.0
3.5
4.0
TJ - Degrees Centigrade
IC - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
320
280
240
200
160
120
80
120
110
100
90
600
550
500
450
400
350
300
250
200
150
65
t f
td(off)
60
55
50
45
40
35
30
25
20
t r
td(on)
T = 125oC, V = 15V
R
G
= 47Ω, V = 15V
GE
J
GE
V
= 2KV
CE
V
= 2KV
CE
80
I
= 4A, 2A
I
I
= 2A
= 4A
C
C
C
70
60
40
50
0
40
25
35
45
55
65
75
85
95
105
115
125
80
120
160
200
240
280
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
320
280
240
200
160
120
80
120
110
100
90
360
320
280
240
200
160
120
80
300
270
240
210
180
150
120
90
tf
td(off
)
tf
R
td(off)
T = 125oC, V = 15V
= 47Ω, V = 15V
J
GE
G
GE
V
= 2KV
V
= 2KV
CE
CE
I
I
= 2A
= 4A
C
C
80
70
T = 25oC, 125oC
60
J
40
50
40
60
0
40
0
30
1.5
2.0
2.5
3.0
3.5
4.0
40
80
120
160
200
240
280
RG - Ohms
IC - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_2N250 (2P) 6-16-09
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