IXDF404SIA-16 [IXYS]
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers; 4安培双低侧超快MOSFET驱动器
| 型号： | IXDF404SIA-16 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers |
| 文件： | 总11页 (文件大小：760K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXDN404 / IXDI404 / IXDF404
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Features
General Description
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected up to 0.5A
• High Peak Output Current: 4A Peak
• Wide Operating Range: 4.5V to 35V
• High Capacitive Load
DriveCapability:1800pFin<15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• LowOutputImpedance
• LowSupplyCurrent
• TwoDriversinSingleChip
TheIXDN404/IXDI404/IXDF404iscomprisedoftwo4Ampere
CMOS high speed MOSFET drivers. Each output can source
and sink 4A of peak current while producing voltage rise and
fall times of less than 15ns to drive the latest IXYS MOSFETs
and IGBT's. The input of the driver is compatible with TTL or
CMOS and is fully immune to latch up over the entire operating
range. A patent-pending circuit virtually eliminates CMOS
power supply cross conduction and current shoot-through.
Improvedspeedanddrivecapabilitiesarefurtherenhancedby
very low, matched rise and fall times.
TheIXDN404isconfiguredasadualnon-invertinggatedriver,
the IXDI404 is a dual inverting gate driver, and the IXDF404 is a
dualinverting+non-invertinggatedriver.
Applications
• DrivingMOSFETsandIGBTs
• MotorControls
TheIXDN404/IXDI404/IXDF404familyareavailableinthe
standard8pinP-DIP(PI), SOIC-8(SIA)andSOIC-16(SIA-16)
packages. For enhanced thermal performance, the SOP-8 and
SOP-16 are also available in a package with an exposed
grounded metal back as the SI and SI-16 repectively.
• LineDrivers
• PulseGenerators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DCtoDCConverters
• PulseTransformerDriver
• Class D Switching Amplifiers
• Limiting di/dt Under Short Circuit
Ordering Information
Part Number
IXDN404PI
Package Type
Temp. Range
Configuration
8-Pin PDIP
Dual Non
Inverting
-55°C to
+125°C
IXDN404SI
8-Pin SOIC with Grounded Metal Back
8-Pin SOIC
16-Pin SOIC with Grounded Metal Back
IXDN404SIA
IXDN404SI-16
IXDN404SIA-16 16-Pin SOIC
IXDI404PI
8-Pin PDIP
Dual Inverting
-55°C to
+125°C
IXDI404SI
8-Pin SOIC with Grounded Metal Back
8-Pin SOIC
IXDI404SIA
IXDI404SI-16
IXDI404SIA-16
IXDF404PI
16-Pin SOIC with Grounded Metal Back
16-Pin SOIC
8-Pin PDIP
Inverting +
IXDF404SI
8-Pin SOIC with Grounded Metal Back
8-Pin SOIC
-55°C to
+125°C
Non Inverting
IXDF404SIA
IXDF404SI-16
IXDF404SIA-16
16-Pin SOIC with Grounded Metal Back
16-Pin SOIC
NOTE: Mounting or solder tabs on all packages are connected to ground
DS99018B(08/04)
Copyright©IXYSCORPORATION2004
First Release
IXDN404 / IXDI404 / IXDF404
Figure 1 - IXDN404 Dual 4A Non-Inverting Gate Driver Functional Block Diagram
Vcc
P
N
ANTI-CROSS
CONDUCTION
CIRCUIT *
IN A
OUT A
P
N
ANTI-CROSS
CONDUCTION
CIRCUIT *
IN B
OUT B
GND
Figure 2 - IXDI404 Dual Inverting 4A Gate Driver Functional Block Diagram
Vcc
P
ANTI-CROSS
IN A
OUT A
CONDUCTION
CIRCUIT *
N
P
N
ANTI-CROSS
CONDUCTION
CIRCUIT *
OUT B
IN B
GND
Figure 3 - IXDF404 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram
Vcc
P
ANTI-CROSS
IN A
OUT A
CONDUCTION
CIRCUIT *
N
P
N
ANTI-CROSS
CONDUCTION
CIRCUIT *
OUT B
IN B
GND
* Patent Pending
2
IXDN404 / IXDI404 / IXDF404
Operating Ratings
Absolute Maximum Ratings (Note 1)
Parameter
Value
Parameter
Value
o
o
C
Operating Temperature Range
-55 C to 125
Supply Voltage
All Other Pins
40V
-0.3V to V
+ 0.3V
Thermal Resistance (To Ambient)
8 Pin PDIP (PI) (θJA)
8 Pin SOIC (SIA)
CC
120 K/W
110 K/W
110 K/W
Junction Temperature
Storage Temperature
o
150 C
o
o
-65 C to 150 C
16 Pin SOIC (SIA-16) (θJA)
θJA with heat sink **
Heat sink area of 1 cm2
8 Pin SOIC
Soldering Lead Temperature
o
300 C
(10 seconds maximum)
95 K/W
95 K/W
Thermal Resistance (Junction to Case) (θJC)
16 Pin SOIC-CT
Heat sink area of 3 cm2
8 Pin SOIC
8 Pin SOIC (SI)
10 K/W
10 K/W
16 Pin SOIC (SI-16)
85 K/W
85 K/W
16 Pin SOIC-CT
** Device soldered to metal back pane. Heat sink area is 1 oz.
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 4.5V ≤ VCC ≤ 35V .
copper on 1 side of 0.06" thick FR4 PC board.
All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.
Symbol
VIH
VIL
VIN
IIN
Parameter
Test Conditions
4.5V ≤ VCC ≤ 18V
4.5V ≤ VCC ≤ 18V
Min
2.5
Typ
Max
Units
V
V
V
µA
High input voltage
Low input voltage
Input voltage range
Input current
0.8
VCC + 0.3
10
-5
-10
0V ≤ VIN ≤ VCC
VOH
VOL
ROH
High output voltage
Low output voltage
VCC - 0.025
V
V
Ω
0.025
2.5
Output resistance
VCC = 18V
VCC = 18V
VCC = 18V
2
1.5
4
@ Output High
ROL
IPEAK
IDC
Output resistance
@ Output Low
2
Ω
A
A
Peak output current
Continuous output
current
Rise time
1
tR
tF
tONDLY
CL=1800pF Vcc=18V
CL=1800pF Vcc=18V
CL=1800pF Vcc=18V
16
13
36
18
17
40
ns
ns
ns
Fall time
On-time propagation
delay
tOFFDLY
Off-time propagation
delay
CL=1800pF Vcc=18V
35
39
ns
VCC
ICC
Power supply voltage
4.5
18
1
0
35
V
Power supply current
VIN = 3.5V
VIN = 0V
3
mA
µ
10
10
A
VIN = + VCC
µA
Specifications Subject To Change Without Notice
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
3
IXDN404 / IXDI404 / IXDF404
ElectricalCharacteristics
Unless otherwise noted, temperature over -55oC to 150oC, 4.5V ≤ VCC ≤ 35V .
All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.
Symbol
VIH
VIL
VIN
IIN
Parameter
Test Conditions
4.5V ≤ VCC ≤ 18V
4.5V ≤ VCC ≤ 18V
Min
2.4
Typ
Max
Units
V
V
V
µA
High input voltage
Low input voltage
Input voltage range
Input current
0.8
VCC + 0.3
10
-5
-10
0V ≤ VIN ≤ VCC
VOH
VOL
ROH
High output voltage
Low output voltage
VCC - 0.025
V
V
Ω
0.025
3.4
Output resistance
VCC = 18V
VCC = 18V
VCC = 18V
@ Output High
ROL
IPEAK
IDC
Output resistance
@ Output Low
2
Ω
A
A
Peak output current
3.2
Continuous output
current
Rise time
1
tR
tF
tONDLY
CL=1000pF Vcc=18V
CL=1000pF Vcc=18V
CL=1000pF Vcc=18V
11
13
60
ns
ns
ns
Fall time
On-time propagation
delay
tOFFDLY
Off-time propagation
delay
CL=1000pF Vcc=18V
59
ns
VCC
ICC
Power supply voltage
4.5
18
35
V
Power supply current
VIN = 3.5V
VIN = 0V
1
3
mA
µ
0
10
10
A
VIN = + VCC
µA
Specifications Subject To Change Without Notice
4
IXDN404 / IXDI404 / IXDF404
Pin Description
SYMBOL
FUNCTION
A Channel Input
DESCRIPTION
A Channel Input signal-TTL or CMOS compatible.
IN A
The system ground pin. Internally connected to all circuitry, this pin provides
ground reference for the entire chip. This pin should be connected to a low
noise analog ground plane for optimum performance.
GND
Ground
IN B
B Channel Input
B Channel Input signal-TTL or CMOS compatible.
B Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
OUT B
B Channel Output
Positive power-supply voltage input. This pin provides power to the entire
chip. The range for this voltage is from 4.5V to 35V.
VCC
Supply Voltage
A Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
OUT A
A Channel Output
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
Figure 4 - Characteristics Test Diagram
Vcc
1
2
3
4
8
7
6
5
NC
NC
In A
Gnd
In B
Out A
Vcc
Out B
10uF
25V
Agilent 1147A
Current Probe
Agilent 1147A
Current Probe
1800 pF
1800 pF
5
IXDN404 / IXDI404 / IXDF404
Typical Performance Characteristics
Fig. 5
Fig. 6
Rise Times vs. Supply Voltage
Fall Times vs. Supply Voltage
80
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
10000pF
6800pF
10000pF
6800pF
4700pF
1800pF
4700pF
1800pF
1000pF
1000pF
200pF
200pF
5
10
15
20
25
30
35
5
10
15
20
25
30
35
Supply Voltage (V)
Supply Voltage (V)
Fig. 7
80
Output Rise Times vs. Load Capacitance
Fig. 8
Output Fall Times vs. Load Capacitance
80
8V
8V
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
10V
12V
10V
12V
18V
18V
25V
35V
25V
35V
0
1000 2000 3000 4000 5000 6000 7000 8000 9000 10000
0
1000 2000 3000 4000 5000 6000 7000 8000 9000 10000
LoadCapacitance (pF)
Load Capacitance (pF)
Fig. 9
Rise And Fall Times vs. Temperature
CL = 1000pF, Vcc = 18V
Fig. 10
Max / Min Input vs. Temperature
CL = 1000pF, Vcc = 18V
2.5
2.4
2.3
2.2
2.1
2
14
12
10
8
tR
tF
Min Input High
Max Input Low
6
1.9
1.8
1.7
1.6
4
2
0
1.5
-60
-10
40
90
140
190
-60
-10
40
90
140
190
Temperature (C)
Temperature (C)
6
IXDN404 / IXDI404 / IXDF404
Supply Current vs. Load Capacitance
Vcc = 8V
Supply Current vs. Frequency
Vcc = 8V
Fig. 11
100
90
Fig. 12
1000
2 MHz
1 MHz
10000 pF
6800 pF
80
100
10
1
4700 pF
1800 pF
70
1000 pF
200 pF
60
50
40
500 kHz
30
0.1
20
10
100 kHz
50 kHz
10 kHz
0.01
1
0
10
100
1000
10000
100
1000
10000
Load Capacitance (pF)
Frequency (kHz)
Supply Current vs. Frequency
Vcc = 12V
Supply Current vs. Load Capacitance
Vcc = 12V
Fig. 13
100
90
Fig. 14
1000
2 MHz
10000 pF
1 Mhz
6800 pF
4700 pF
80
100
10
1
1800 pF
1000 pF
200 pF
70
60
500 kHz
50
40
30
20
0.1
100 kHz
50 kHz
10 kHz
10
0
100
0.01
1
1000
10000
10
100
1000
10000
Load Capacitance (pF)
Frequency (kHz)
Supply Current vs. Load Capacitance
Vcc = 18V
Supply Current vs. Frequency
Vcc = 18V
Fig. 15
100
90
Fig. 16
1000
10000 pF
6800 pF
4700 pF
1800 pF
1000 pF
200 pF
2 MHz
1 MHz
500 kHz
100
10
1
80
70
60
50
40
30
0.1
20
100 kHz
50 kHz
10 kHz
10
0.01
1
0
100
10
100
1000
10000
1000
10000
Frequency (kHz)
Load Capacitance (pF)
7
IXDN404 / IXDI404 / IXDF404
Supply Current vs. Frequency
Vcc = 35V
Fig. 18
Fig. 17
Supply Current vs. Load Capacitance
Vcc = 35V
1000
10000 pF
6800 pF
4700 pF
1800 pF
1000 pF
200 pF
100
90
80
70
60
50
40
30
20
10
0
100
10
2 MHz
500 kHz
1
100 kHz
0.1
0.01
50 kHz
1
10
100
1000
10000
100
1000
10000
Frequency (kHz)
Load Capacitance (pF)
Propagation Delay vs. Input Voltage
CL = 1800pF Vcc = 15V
Fig. 19
Propagation Delay vs. Supply Voltage
Fig. 20
CL = 1800pF V = 5V@1kHz
in
50
70
60
50
40
30
20
10
0
45
40
35
30
25
20
tONDLY
tONDLY
tOFFDLY
tOFFDLY
2
4
6
8
10
12
5
10
15
20
25
30
35
Input Voltage (V)
Supply Voltage (V)
Fig. 22
Propagation Delay Times vs. Temperature
CL = 1000pF, Vcc = 18V
Fig. 21
60
Q uiescent Supply Current vs. Tem perature
Vcc = 18V, Vin = 5V@ 1kHz, CL = 1000pF
0.3
55
0.25
0.2
50
45
tONDLY
0.15
0.1
40
tOFFDLY
35
30
0.05
0
25
20
-60
-10
40
90
140
190
-60
-10
40
90
140
190
Tem perature (C)
Temperature (C)
8
IXDN404 / IXDI404 / IXDF404
Fig. 23
High State Ouput Resistance vs. Supply Voltage
Fig. 24
Low State Output Resistance vs. Supply Voltage
6
5
4
3
2
1
0
6
5
4
3
2
1
0
5
10
15
20
25
30
35
5
10
15
20
25
30
35
Supply Voltage (V)
Supply Voltage (V)
Fig. 25
Fig. 26
Vcc vs. N Channel Ouput Current
Vcc vs. P Channel Output Current
0
12
-2
-4
10
8
-6
6
-8
4
-10
-12
2
0
5
10
15
20
25
30
35
5
10
15
20
25
30
35
Vcc (V)
Vcc (V)
P Channel Output Current vs. Temperature
cc = 18V, CL = 1000pF
N Channel Output Current vs. Temperature
Vcc = 18V CL = 1000pF
Fig. 27
Fig. 28
V
6
5
4
3
2
1
0
6
5
4
3
2
1
0
-80
-30
20
70
120
170
-80
-30
20
70
120
170
Temperature (C)
Temperature (C)
9
IXDN404 / IXDI404 / IXDF404
PIN CONFIGURATIONS
1
2
3
4
NC
OUT A
VS
NC
8
7
6
5
1
2
3
4
NC
OUT A
VS
NC
8
7
6
5
1
2
3
4
NC
OUT A
VS
NC
8
7
6
5
IN A
GND
INB
IN A
GND
INB
IN A
GND
INB
OUT B
OUT B
OUT B
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDN404
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDI404
8 Lead PDIP (PI)
8 Pin SOIC (SI)
NC
NC
1
NC
OUT A
OUT A
VCC
16
15
14
13
12
11
NC 16
1
NC
NC
OUT A
OUT A
VCC
16
15
14
13
12
11
1
2
3
4
5
6
7
8
OUT A
15
14
13
12
11
2
3
4
5
6
7
8
IN A
NC
2
3
4
5
6
7
8
IN A
NC
IN A
NC
OUT A
VCC
GND
GND
GND
GND
NC
VCC
GND
NC
VCC
GND
NC
VCC
OUT B
OUT B
OUT B
IN B
NC
IN B
NC
OUT B 10
NC
OUT B 10
NC
IN B
NC
OUT B 10
NC
9
9
9
16 Pin SOIC
IXDI404SI-16
16 Pin SOIC
IXDF404SI-16
16 Pin SOIC
IXDN404SI-16
Supply Bypassing, Grounding Practices And Output Lead inductance
GROUNDING
When designing a circuit to drive a high speed MOSFET
utilizing the IXDN404/IXDI404/IXDF404, it is very important to
observe certain design criteria in order to optimize performance
of the driver. Particular attention needs to be paid to Supply
Bypassing, Grounding, and minimizing the Output Lead
Inductance.
In order for the design to turn the load off properly, the IXDN404
must be able to drain this 2.5A of current into an adequate
grounding system. There are three paths for returning current
that need to be considered: Path #1 is between the IXDN404
and its load. Path #2 is between the IXDN404 and its power
supply. Path #3 is between the IXDN404 and whatever logic is
driving it. All three of these paths should be as low in resistance
and inductance as possible, and thus as short as practical. In
addition, every effort should be made to keep these three
ground paths distinctly separate. Otherwise, the returning
ground current from the load may develop a voltage that would
have a detrimental effect on the logic line driving the IXDN404.
Say, for example, the IXDN404 is being used to charge a
2500pF capacitive load from 0 to 25 volts in 25ns.
Using the formula: I= ∆V C / ∆t, where ∆V=25V C=2500pF &
∆t=25ns, one can determine that to charge 2500pF to 25 volts
in 25ns will take a constant current of 2.5A. (In reality, the
charging current won’t be constant and will peak somewhere
around 4A).
OUTPUTLEADINDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and its
load as short and wide as possible. If the driver must be placed
farther than 2” (5mm) from the load, then the output leads
should be treated as transmission lines. In this case, a twisted-
pair should be considered, and the return line of each twisted
pair should be placed as close as possible to the ground pin
ofthedriver,andconnecteddirectlytothegroundterminal
of the load.
SUPPLYBYPASSING
In order for the design to turn the load on properly, the IXDN404
must be able to draw this 2.5A of current from the power supply
in the 25ns. This means that there must be very low impedance
between the driver and the power supply. The most common
method of achieving this low impedance is to bypass the power
supply at the driver with a capacitance value that is a magnitude
larger than the load capacitance. Usually, this would be
achievedbyplacingtwodifferenttypesofbypassingcapacitors,
with complementary impedance curves, very close to the driver
itself. (These capacitors should be carefully selected, low
inductance, low resistance, high-pulse current-service
capacitors). Lead lengths may radiate at high frequency due
to inductance, so care should be taken to keep the lengths of
the leads between these bypass capacitors and the IXDN404
to an absolute minimum.
10
IXDN404 / IXDI404 / IXDF404
Dimenional Outline: IXDD404PI
Dimenional Outlines: IXDD404SI-CT and IXDD404SIA
DimenionalOutlines:IXDD404SI-16CTandIXDD404SIA-16
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
e-mail: sales@ixys.net
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: marcom@ixys.de
11
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