IXFH14N100Q2_08 [IXYS]
HiPerFET Power MOSFETs Q2-Class; HiPerFET功率MOSFET Q2级
| 型号： | IXFH14N100Q2_08 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q2-Class |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
HiPerFETTM
PowerMOSFETs
Q2-Class
IXFH14N100Q2
VDSS
ID25
= 1000V
= 14A
RDS(on) ≤ 950mΩ
trr
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
TO-247(IXFH)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
(TAB)
G
D
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
S
ID25
IDM
TC =25°C
TC = 25°C, pulse width limited by TJM
14
56
A
A
G = Gate
S = Source
D
= Drain
TAB = Drain
IA
TC =25°C
14
A
J
EAS
dV/dt
PD
TC =25°C
2.5
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC =25°C
20
V/ns
W
500
Features
TJ
-55 ... +150
150
°C
°C
°C
ꢀDouble metal process for low gate
resistance
TJM
Tstg
ꢀInternational standard package
ꢀEpoxymeetUL94V-0, flammability
classification
-55 ... +150
TL
1.6mm (0.063 in) from case for 10s
Mountingtorque
300
°C
Md
1.13/10
Nm/lb.in.
ꢀAvalanche energy and current rated
ꢀFast intrinsic Rectifier
Weight
6
g
Applications
ꢀ
DC-DCconverters
Switched-mode and resonant-mode
ꢀ
power supplies, >500kHz switching
DCchoppers
Pulsegeneration
Laserdrivers
ꢀ
Symbol
TestConditions
CharacteristicValues
ꢀ
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
ꢀ
VDSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 4mA
1000
3.0
V
V
VGS(th)
5.5
Advantages
IGSS
IDSS
VGS = ±30V, VDS = 0V
±200 nA
25 μA
ꢀ
VDS = VDSS
VGS =0V
Easy to mount
Spacesavings
ꢀ
TJ = 125°C
1
mA
ꢀ
High power density
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
950 mΩ
DS99073A(5/08)
© 2008 IXYS CORPORATION, All rights reserved
IXFH14N100Q2
Symbol
TestConditions
CharacteristicValues
TO-247 (IXFH) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
15
28
S
Ciss
Coss
Crss
2800
287
pF
pF
pF
∅P
1
2
3
100
td(on)
tr
td(off)
tf
Resistive Switching Times
12
10
28
12
ns
ns
ns
ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
e
Terminals: 1 - Gate
2 - Drain
Qg(on)
Qgs
83
20
40
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
Qgd
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
RthJC
RthCK
0.25 °C/W
°C/W
0.21
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-DrainDiode
Symbol
TestConditions
CharacteristicValues
∅P 3.55
Q
3.65
.140 .144
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
5.89
6.40 0.232 0.252
R
4.32
5.49 .170 .216
IS
VGS = 0V
14 A
ISM
Repetitive, pulse width limited by TJM
56
A
V
VSD
IF = IS, VGS = 0 V, Note 1
1.5
trr
QRM
IRM
300 ns
μC
IF = 25A, -di/dt = 100 A/μs, VR = 100 V
0.8
7
A
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,835,592
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2 6,759,692
6,710,463
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFH14N100Q2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
27
24
21
18
15
12
9
14
12
10
8
V
GS = 10V
8V
V
GS = 10V
7V
7V
6
6V
5V
6V
5V
4
6
2
3
0
0
0
0
0
2
4
6
8
VDS - Volts
10
12
14
0
3
6
9
12 15 18 21 24 27 30
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs.
Junction Temperature
14
12
10
8
3.2
2.8
2.4
2.0
1. 6
V
GS = 10V
7V
V
GS = 10V
6V
5V
I D= 14A
I D= 7A
6
4
1. 2
2
0.8
0
0.4
4
8
12 16
VDS - Volts
20
24
28
-50
-25
0
25
50
75
TJ - Degrees Centigrade
100
125
150
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case Temperature
16
2.6
2.4
2.2
2.0
1. 8
1. 6
1. 4
1. 2
1. 0
0.8
V
GS = 10V
14
12
10
8
º
TJ = 125 C
6
4
º
TJ = 25 C
2
0
3
6
9
12
15
I D - Amperes
18
21
24
27
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
© 2008 IXYS CORPORATION, All rights reserved
IXFH14N100Q2
Fig. 8. Transconductance
Fig. 7. Input Admittance
28
24
20
16
12
8
20
18
16
14
12
10
8
º
TJ = - 40 C
º
TJ = 125 C
25ºC
º
25 C
- 40ºC
º
125 C
6
4
4
2
0
0
4.0
4.5
5.0
5.5
VGS - Volts
6.0
6.5
7.0
0
4
8
12 16
D - Amperes
20
24
28
I
Fig. 9. Source Current vs. Source-To-Drain
Voltage
Fig. 10. Gate Charge
45
40
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
VDS = 500V
I D= 7A
I G= 10mA
º
TJ = 125 C
º
TJ = 25 C
1
0
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD - Volts
0
10
20
30
40
50
60
Q G - nanoCoulombs
70
80
90
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10000
100 0
10 0
1
0.1
C
iss
C
oss
0.01
C
rss
f
= 1MHz
5
0.001
10
0.01
0.1
1
10
Pulse Width - milliseconds
100
1000
0
10
15
20
VDS - Volts
25
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_14N100Q2 (7F)5-28-08-B
相关型号：
IXFH14N60P3
Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
IXYS
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