IXFH32N50 [IXYS]

HiPerFET Power MOSFETs; HiPerFET功率MOSFET


型号：	IXFH32N50
厂家：	IXYS CORPORATION
描述：	HiPerFET Power MOSFETs HiPerFET功率MOSFET
文件：	总4页 (文件大小：113K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFET^TM

Power MOSFETs

V_DSS

I_D25

R_DS(on)

IXFH/IXFT 30N50

IXFH/IXFT 32N50

500V

30 A 0.16 W

32 A 0.15 W

N-Channel Enhancement Mode

High dv/dt, Low t_rr, HDMOS^TMFamily

t_rr£ 250 ns

TO-247 AD (IXFH)

Symbol

TestConditions

MaximumRatings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

500

V_GS

V_GSM

Continuous

Transient

±20

±30

D (TAB)

I_D25

I_DM

I_AR

T_C= 25°C

30N50

32N50

30N50

32N50

30N50

32N50

120

128

T_C= 25°C

pulse width limited by T_JM

T_C= 25°C

TO-268 (D3) Case Style

E_AS

T_C= 25°C

I_D= 25°C

1.5

(TAB)

E_AR

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

V/ns

T_J£ 150°C, R_G= 2 W

G = Gate,

S = Source,

D = Drain,

TAB = Drain

P_D

T_C= 25°C

360

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

• Internationalstandardpackages

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

T_L

1.6 mm (0.062 in.) from case for 10 s

Mountingtorque

300

°C

M_d

1.13/10 Nm/lb.in.

Weight

• Low package inductance

- easy to drive and to protect

• Fast intrinsic Diode

Symbol

V_DSS

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ.

max.

Applications

• DC-DC converters

V_GS= 0 V, I_D= 1 mA

500

• Battery chargers

V_DSStemperature coefficient

0.102

%/K

• Switched-modeandresonant-mode

powersupplies

• DC choppers

V_GS(th)V_DS= V_GS, I_D= 4 mA

V_GS(th)temperature coefficient

-0.206

%/K

• AC motor control

• Temperatureandlightingcontrols

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

200

Advantages

• Easy to mount with 1 screw (TO-247)

(isolatedmountingscrewhole)

• Space savings

R_DS(on)V_GS= 10 V, I_D= 15A

32N50

30N50

0.15

0.16

Pulse test, t £ 300 ms, duty cycle d £ 2 %

• High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

97518H(6/99)

1 - 4

IXFH 30N50 IXFH 32N50

IXFT 30N50 IXFT 32N50

Symbol

g_fs

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

TO-247 AD (IXFH) Outline

min. typ.

max.

V_DS= 10 V; I_D= 0.5 I_D25, pulse test

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

C_iss

C_oss

C_rss

5200

640

240

5700

750

310

t_d(on)

t_r

t_d(off)

t_f

110

140

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

R_G= 2 W (External)

Q_g(on)

Q_gs

Q_gd

227

110

300

145

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

(TO-247 Case Style)

Dim. Millimeter

Inches

Min. Max. Min. Max.

R_thJC

R_thCK

0.35 K/W

K/W

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

0.25

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

4.32 5.49 0.170 0.216

5.4

6.2 0.212 0.244

Source-DrainDiode

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

1.65 2.13 0.065 0.084

4.5

0.177

Symbol

I_S

TestConditions

min.

typ. max.

1.0

1.4 0.040 0.055

10.8 11.0 0.426 0.433

V_GS= 0 V

30N50

32N50

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

I_SM

V_SD

t_rr

Repetitive;

pulse width limited by T_JM

30N50

32N50

120

128

1.5 2.49 0.087 0.102

I_F= I_S, V_GS= 0 V,

Pulse test, t £ 300 ms, duty cycle d £ 2 %

1.5

T_J= 25°C

T_J= 125°C

250

400

I_F= I_S

Q_RM

I_RM

-di/dt = 100 A/ms,

V_R= 100 V

T_J= 25°C

0.85

TO-268AA (D³PAK)

Dim.

Millimeter

Min. Max.

Inches

Min. Max.

Min. Recommended Footprint

A₁

A₂

4.9

2.7

.02

5.1

2.9

.25

.193 .201

.106 .114

.001 .010

b₂

1.15

1.9

1.45

2.1

.65

.045 .057

.75

.83

.016 .026

E₁

13.80 14.00

15.85 16.05

.543 .551

.624 .632

.524 .535

13.3

5.45 BSC

18.70 19.10

13.6

.215 BSC

.736 .752

.094 .106

2.40

2.70

1.20

1.00

0.25 BSC

1.40

1.15

.047 .055

.039 .045

.010 BSC

3.80

4.10

.150 .161

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

2 - 4

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

IXFH 30N50 IXFH 32N50

IXFT 30N50 IXFT 32N50

Figure 2. Output Characteristics at 125^OC

Figure 1. Output Characteristics at 25^OC

V_GS=10V

T_J= 25^OC

V_GS=10V

T_J= 125^OC

V_DS- Volts

Figure 4. R_DS(on)normalized to 15A/25^OC vs. T_J

Figure 3. R_DS(on)normalized to 15A/25^OC vs. I_D

2.8

2.4

2.0

1.6

1.2

0.8

2.8

2.4

2.0

1.6

1.2

0.8

V_GS= 10V

_GS= 10V

Tj=125⁰

I_D= 32A

I_D= 16A

Tj=25⁰

100

125

150

T_J- Degrees C

I_D- Amperes

Figure 5. Drain Current vs. Case Temperature

Figure 6. Admittance Curves

IXFH32N50

IXFH30N50

T_J= 125^oC

T_J= 25^oC

-50 -25

25 50 75 100 125 150

T_C- Degrees C

V_GS- Volts

3 - 4

IXFH 30N50 IXFH 32N50

IXFT 30N50 IXFT 32N50

Figure 7. Gate Charge

Figure 8. Capacitance Curves

4500

F = 1MHz

4000

Ciss

3500

Vds=300V

I_D=30A

I_G=10mA

3000

2500

2000

Coss

1500

1000

Crss

500

100

150

200

250

300

Gate Charge - nC

V_DS- Volts

Figure 9. Forward Voltage Drop of the

Intrinsic Diode

100

V_GS= 0V

1 ms

10 ms

100 ms

T_J=125^OC

T_C= 25^OC

T_J=25^OC

0.1

0.4

0.6

0.8

1.0

1.2

500

100

V_SD- Volts

V_DS- Volts

Figure 10. Transient Thermal Resistance

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

10^-3

10^-2

10^-1

Pulse Width - Seconds

10⁰

10¹

4 - 4

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