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IXFH34N65X2 [IXYS]

MOSFET N-CH 650V 34A TO-247;
IXFH34N65X2
型号： IXFH34N65X2
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

MOSFET N-CH 650V 34A TO-247
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X2-Class HiPerFETTM  
Power MOSFET  
VDSS = 650V  
ID25 = 34A  
RDS(on) 100m  
IXFA34N65X2  
IXFP34N65X2  
IXFH34N65X2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXFA)  
Fast Intrinsic Diode  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220AB (IXFP)  
TJ = 25C to 150C  
650  
650  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
D (Tab)  
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
34  
68  
A
A
TO-247 (IXFH)  
IA  
TC = 25C  
TC = 25C  
10  
1
A
J
EAS  
G
D
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
D (Tab)  
540  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10.65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 2.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
650  
V
V
3.5  
5.0  
Applications  
100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
IDSS  
10 A  
1.75 mA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
100 m  
DS100683C(03/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFA34N65X2 IXFP34N65X2  
IXFH34N65X2  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
12  
20  
S
RGi  
0.8  
Ciss  
Coss  
Crss  
3230  
2000  
2
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
130  
486  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
37  
60  
64  
30  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 10(External)  
Qg(on)  
Qgs  
56  
19  
18  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.23 C/W  
TO-220  
TO-247  
0.50  
0.25  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
34  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
136  
1.4  
V
trr  
QRM  
IRM  
164  
1.2  
14.4  
ns  
IF = 17A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA34N65X2 IXFP34N65X2  
IXFH34N65X2  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
35  
30  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
V
= 10V  
9V  
GS  
9V  
8V  
7V  
8V  
7V  
6V  
5V  
6V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 17A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
35  
30  
25  
20  
15  
10  
5
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 34A  
D
I
= 17A  
D
6V  
5V  
4V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 17A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.6  
4.2  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
T
J
= 125ºC  
BV  
DSS  
T
J
= 25ºC  
V
GS(th)  
0
10  
20  
30  
40  
50  
60  
70  
80  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFA34N65X2 IXFP34N65X2  
IXFH34N65X2  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
T
J
= 125ºC  
25ºC  
- 40ºC  
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
35  
30  
25  
20  
15  
10  
5
120  
100  
80  
60  
40  
20  
0
T
J
= - 40ºC  
25ºC  
125ºC  
T
= 125ºC  
J
T
J
= 25ºC  
1.0  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.1  
1.2  
1.3  
ID - Amperes  
VSD - Volts  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
8
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
V
= 325V  
DS  
I
I
= 17A  
D
G
= 10mA  
C
iss  
6
C
C
oss  
rss  
4
2
10  
0
1
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA34N65X2 IXFP34N65X2  
IXFH34N65X2  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
100  
10  
1
30  
25  
20  
15  
10  
5
25µs  
100µs  
R
Limit  
)
DS(  
on  
T
= 150ºC  
= 25ºC  
J
T
C
1ms  
Single Pulse  
0.1  
0
10  
100  
1,000  
0
100  
200  
300  
400  
500  
600  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_34N65X2(X5-S602) 12-14-15  
IXFA34N65X2 IXFP34N65X2  
IXFH34N65X2  
TO-263 Outline  
TO-247 Outline  
TO-220 Outline  
D
A
A
B
E
A2  
Q
S
D2  
P1  
R
D1  
D
4
1
2
3
L1  
C
E1  
1 = Gate  
2 = Drain  
3 = Source  
4 = Drain  
L
A1  
b
C
b2  
1 - Gate  
b4  
e
2,4 - Drain  
3 - Source  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  

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