IXFH67N10 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFH67N10 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFH/IXFM 67 N10
IXFH/IXFM 75 N10
100V 67 A 25 mW
100V 75 A 20 mW
trr £ 200 ns
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Symbol
TestConditions
MaximumRatings
TO-247 AD (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
100
100
V
V
TJ = 25°C to 150°C; RGS = 1 MW
(TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
IAR
TC = 25°C
67N10
75N10
67
75
A
A
TO-204 AE (IXFM)
TC = 25°C, pulse width limited by TJM
TC = 25°C
67N10
75N10
268
300
A
A
67N10
75N10
67
75
A
A
G
D
EAR
TC = 25°C
30
5
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
G = Gate,
S = Source,
D = Drain,
TAB = Drain
PD
TC = 25°C
300
W
TJ
-55 ... +150
150
°C
°C
°C
Features
●
Internationalstandardpackages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
TJM
Tstg
●
●
●
-55 ... +150
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10 Nm/lb.in.
●
●
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Weight
TO-204 = 18 g, TO-247 = 6 g
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
●
●
●
●
DC-DC converters
Synchronousrectification
Battery chargers
Switched-modeandresonant-mode
powersupplies
min. typ. max.
VDSS
VGS = 0 V, ID = 250 mA
100
2.0
V
V
●
●
●
●
DC choppers
AC motor control
Temperatureandlightingcontrols
Low voltage relays
VGS(th)
VDS = VGS, ID = 4 mA
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 mA
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
Advantages
●
Easy to mount with 1 screw (TO-247)
RDS(on)
VGS = 10 V, ID = 0.5 ID25
67N10
75N10
0.025
0.020
W
W
(isolatedmountingscrewhole)
Space savings
High power density
●
Pulse test, t £ 300 ms, duty cycle d £ 2 %
●
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91521F (10/95)
1 - 4
IXFH 67N10
IXFM 67N10
IXFH 75N10
IXFM 75N10
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
TO-247 AD (IXFH) Outline
min. typ. max.
VDS = 10 V; ID = ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
25
30
S
Ciss
Coss
Crss
4500
1600
800
pF
pF
pF
td(on)
tr
td(off)
tf
20
30
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
60 110
80 110
RG = 2 W, (External)
60
90
Qg(on)
Qgs
180 260
36 70
85 160
nC
nC
nC
Dim. Millimeter
Inches
Min. Max. Min. Max.
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
Qgd
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
RthJC
RthCK
0.42 K/W
K/W
E
F
4.32 5.49 0.170 0.216
0.25
5.4
6.2 0.212 0.244
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
K
1.0
1.4 0.040 0.055
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Symbol
IS
TestConditions
N
1.5 2.49 0.087 0.102
VGS = 0 V
67N10
75N10
67
75
A
A
TO-204 AE (IXFM) Outline
ISM
VSD
trr
Repetitive;
pulse width limited by TJM
67N10
75N10
268
300
A
A
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.75
V
IF = 25 A, -di/dt = 100 A/ms, TJ = 25°C
VR = 25 V
200 ns
300 ns
TJ = 125°C
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
B
38.61 39.12 1.520 1.540
22.22 0.875
-
-
C
D
6.40 11.40 0.252 0.449
1.45 1.60 0.057 0.063
E
F
1.52 3.43 0.060 0.135
30.15 BSC 1.187 BSC
G
H
10.67 11.17 0.420 0.440
5.21 5.71 0.205 0.225
J
K
16.64 17.14 0.655 0.675
11.18 12.19 0.440 0.480
Q
R
3.84 4.19 0.151 0.165
25.16 26.66 0.991 1.050
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFH 67N10
IXFM 67N10
IXFH 75N10
IXFM 75N10
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
200
150
100
50
150
125
100
75
VGS = 10V
TJ = 25°C
9V
8V
50
7V
25
6V
5V
TJ = 125°C
TJ = 25°C
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
1.4
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
TJ = 25°C
1.3
1.2
1.1
1.0
0.9
0.8
VGS = 10V
ID = 37.5A
VGS = 15V
0
20 40 60 80 100 120 140 160
ID - Amperes
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
Fig. 5 Drain Current vs.
Case Temperature
75N10
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
80
60
40
20
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
VGS(th)
BVDSS
67N10
-50 -25
0
25 50 75 100 125 150
TC - Degrees C
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
© 2000 IXYS All rights reserved
3 - 4
IXFH 67N10
IXFM 67N10
IXFH 75N10
IXFM 75N10
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
10
9
8
7
6
5
4
3
2
1
0
VDS = 50V
10µs
Limited by RDS(on)
I
I
D = 37.5A
G = 1mA
100µs
100
10
1
1ms
10ms
100ms
0
25 50 75 100 125 150 175 200
Gate Charge - nCoulombs
1
10
100
VDS - Volts
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
6000
5000
4000
3000
2000
1000
0
150
125
100
75
Ciss
f = 1MHz
V
DS = 25V
50
Coss
TJ = 125°C
TJ = 25°C
25
Crss
0
0
5
10
15
20
25
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDS - Volts
VSD - Volt
Fig.11 Transient Thermal Impedance
D=0.5
0.1
0.01
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
4 - 4
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