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IXFH90N20Q [IXYS]

HiPerFETTM Power MOSFETs Q-CLASS; HiPerFETTM功率MOSFET Q系列
IXFH90N20Q
型号： IXFH90N20Q
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerFETTM Power MOSFETs Q-CLASS
HiPerFETTM功率MOSFET Q系列
文件： 总2页 (文件大小：102K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Advanced Technical Information  
HiPerFETTM  
Power MOSFETs  
Q-CLASS  
IXFX 90N20Q  
IXFK 90N20Q  
VDSS  
= 200 V  
ID25  
RDS(on)  
=
=
90 A  
22 mΩ  
t ≤ 200 µs  
Single MOSFET Die  
rr  
N-ChannelEnhancementMode  
AvalancheRated, LowQg,  
High dV/dt, Low trr  
PLUS247
(TAB)  
G
D
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
T
= 25°C to 150°C  
= 25°C to 150°C; R = 1 MΩ  
300  
300  
V
V
J
J
TO-264AA(IXFK)  
GS  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
(TAB)  
ID25  
IDM  
IAR  
T
= 25°C  
73  
292  
73  
A
A
A
C
T
= 25°C, pulse width limited by T  
= 25°C  
C
JM  
T
C
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
EAR  
EAS  
T
= 25°C  
= 25°C  
60  
2.5  
mJ  
J
C
T
C
dv/dt  
I
≤ I , di/dt ≤ 100 A/µs, V ≤ V  
5
V/ns  
S
DM  
DD  
DSS  
T
≤ 150°C, R = 2 Ω  
J
G
Features  
l
IXYS advanced low Qg process  
Low gate charge and capacitances  
- easier to drive  
- faster switching  
International standard packages  
Low RDS (on)  
PD  
TJ  
T
= 25°C  
500  
W
C
l
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l
l
l
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Rated for unclamped Inductive load  
switching (UIS) rated  
Md  
Mounting torque  
TO-264  
0.4/6  
Nm/lb.in.  
l
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Molding epoxies meet UL 94 V-0  
flammability classification  
Applications  
l
DC-DC converters  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
l
Battery chargers  
l
J
Switched-mode and resonant-mode  
power supplies  
min. typ. max.  
l
VGS = 0 V, ID = 4mA  
VDS = VGS, ID = 4mA  
300  
2.0  
V
DC choppers  
l
AC motor control  
VGS(th)  
IGSS  
4.0 V  
l
Temperature and lighting controls  
V
= ±20 V, V = 0  
±100 nA  
GS  
DS  
Advantages  
l
PLUS 247 package for clip or spring  
IDSS  
V
V
= V  
= 0 V  
100 µA  
2 mA  
TM  
DS  
DSS  
T
= 125°C  
GS  
J
mounting  
l
l
RDS(on)  
V
Note 1  
= 10 V, I = 0.5 I  
22 mΩ  
Space savings  
High power density  
GS  
D
D25  
© 2000 IXYS All rights reserved  
98676A (03/24/00)  
IXFK 90N20Q  
IXFX 90N20Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
PLUS247TM Outline  
J
min. typ. max.  
V
= 10 V; I = 0.5 I  
D25  
Note 1  
40  
50  
S
DS  
D
Ciss  
Coss  
Crss  
6800  
1620  
480  
pF  
pF  
pF  
V
= 0 V, V = 25 V, f = 1 MHz  
GS  
DS  
td(on)  
tr  
td(off)  
tf  
35  
31  
82  
12  
ns  
ns  
ns  
ns  
V
= 10 V, V = 0.5 V , I = 0.5 I  
D25  
GS  
DS  
DSS  
D
R = 1 Ω (External),  
G
Terminals: 1 - Gate  
2 - Drain (Collector)  
3-Source(Emitter)  
4 - Drain (Collector)  
Qg(on)  
Qgs  
190  
40  
nC  
nC  
nC  
Dim.  
A
Millimeter  
Min. Max.  
Inches  
Min. Max.  
V
= 10 V, V = 0.5 V , I = 0.5 I  
DS DSS D D25  
GS  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Qgd  
90  
A
1
A
2
RthJC  
RthCK  
0.26 K/W  
K/W  
b
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
1
0.15  
b
2
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
20.80 21.34  
15.75 16.13  
e
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
Source-DrainDiode  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
L
L1  
J
3.81  
4.32  
Symbol  
TestConditions  
= 0 V  
min. typ. max.  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IS  
V
90  
A
A
GS  
TO-264 AA Outline  
ISM  
Repetitive;  
pulse width limited by T  
360  
JM  
VSD  
I = I , V = 0 V, Note 1  
1.3  
V
F
S
GS  
trr  
200 ns  
I = 45A,-di/dt = 100 A/µs, V = 100 V  
QRM  
IRM  
1.4  
10  
µC  
F
R
A
Millimeter  
Dim.  
Inches  
Min.  
Max.  
Min.  
Max.  
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
A1  
A2  
b
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
b1  
b2  
c
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
5.46BSC  
.215BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  

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