IXFK14N100Q [IXYS]

Power Field-Effect Transistor, 14A I(D), 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3;


型号：	IXFK14N100Q
厂家：	IXYS CORPORATION
描述：	Power Field-Effect Transistor, 14A I(D), 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
文件：	总2页 (文件大小：145K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFET^TM

Power MOSFETs

Q-Class

IXFH 14N100Q

IXFK 14N100Q

IXFT 14N100Q

V_DSS

I_D25

= 1000 V

14 A

R_DS(on)= 0.75 Ω

t ≤ 250 ns

N-ChannelEnhancementMode

AvalancheRated, LowQ_g,Highdv/dt

Preliminarydatasheet

TO-247 AD (IXFH)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

1000

(TAB)

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

TO-268 (D3) ( IXFT)

E_AR

E_AS

T_C= 25°C

1.5

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

V/ns

T_J≤ 150°C, R_G= 2 Ω

TO-264 AA (IXFK)

P_D

T_C= 25°C

360

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

D (TAB)

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting torque

300

°C

G = Gate

S = Source

M_d

TO-247

TO-264

1.13/10 Nm/lb.in.

0.9/6 Nm/lb.in.

TAB = Drain

Weight

Symbol

TO-247

TO-268

TO-264

Features

IXYS advanced low Q_gprocess

International standard packages

Epoxy meet UL 94 V-0, flammability

classification

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Low R_{DS (on)}low Q_g

Avalanche energy and current rated

Fast intrinsic rectifier

V_DSS

V_GS= 0 V, I_D= 250 µA

1000

3.0

V_GS(th)

V_DS= V_GS, I_D= 4 mA

5.0

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

50 µA

Advantages

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Easy to mount

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

0.75

Ω

Space savings

High power density

98858 (9/01)

IXFH 14N100Q IXFK 14N100Q

IXFT 14N100Q

TO-247 AD (IXFH) Outline

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_DS= 10 V; I_D= 0.5 I_D25, pulse test

Terminals:

1 - Gate

C_iss

C_oss

C_rss

4500

410

2 - Drain

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

3 - Source

Tab - Drain

150

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

Dim.

Millimeter

Inches

R_G= 2.0 Ω (External),

Min.

Max.

Min.

Max.

4.7

2.2

5.3

2.54

2.6

.185

.087

.059

.209

.102

.098

Q_g(on)

Q_gs

130 170 nC

1.0

1.65

2.87

1.4

2.13

3.12

.040

.065

.113

.055

.084

.123

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

Q_gd

20.80

15.75

21.46

16.26

.016

.819

.610

.031

.845

.640

R_thJC

R_thCK

0.35 K/W

5.20

5.72

20.32

4.50

0.205

.780

0.225

.800

.177

19.81

TO-247

TO-264

0.25

0.15

K/W

P3.55

3.65

.140

.144

5.89

6.40

0.232

0.252

.216

4.32

5.49

.170

6.15 BSC

242 BSC

Source-DrainDiode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

TO-264 AA Outline

Symbol

I_S

TestConditions

min.

typ. max.

V_GS= 0 V

I_SM

Repetitive; pulse width limited by T_JM

V_SD

I_F= I_S, V_GS= 0 V,

1.5

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t_rr

Q_RM

I_RM

250

µC

I_F= I_S-di/dt = 100 A/µs, V_R= 100 V

Millimeter

Dim.

Inches

Max.

.202

Min.

Max.

Min.

.190

4.82

2.54

2.00

5.13

2.89

2.10

.100

.079

.114

.083

TO-268 Outline

1.12

2.39

2.90

1.42

2.69

3.09

.044

.094

.114

.056

.106

.122

0.53

25.91

19.81

0.83

26.16

19.96

.021

1.020

.780

.033

1.030

.786

5.46BSC

.215BSC

0.00

0.25

.000

.010

20.32

2.29

20.83

2.59

.800

.090

.820

.102

P3.17

3.66

.125

.144

6.07

8.38

6.27

8.69

.239

.330

.247

.342

3.81

1.78

4.32

2.29

.150

.070

.170

.090

6.04

1.57

6.30

1.83

.238

.062

.248

.072

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

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