IXFK180N10_09 [IXYS]
HiperFET Power MOSFETs; HiPerFET功率MOSFET型号: | IXFK180N10_09 |
厂家: | IXYS CORPORATION |
描述: | HiperFET Power MOSFETs |
文件: | 总5页 (文件大小:148K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HiperFETTM Power
MOSFETs
VDSS = 100V
ID25 = 180A
RDS(on) ≤ 8mΩ
IXFK180N10
IXFX180N10
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
100
100
V
V
G
D
S
VDGR
(TAB)
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
PLUS247 (IXFX)
ID25
TC = 25°C ( Chip Capabitlty)
180
A
ILRMS
IDM
Leads Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
160
720
A
A
IA
EAS
TC = 25°C
TC = 25°C
180
3
A
J
(TAB)
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
5
V/ns
W
G = Gate
S = Source
D
= Drain
560
TAB = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z International Standard Packages
z High Current Handling Capability
z Avalanche Rated
Md
Mounting Force
MountingTorque
(PLUS247)
(TO-264)
20..120/4.5..27
N/lb.
Nm/lb.in.
1.13/10
z
Low RDS(on) HDMOSTM Process
Weight
PLUS247
TO-264
6
10
g
g
z Fast intrinsic diode
z Low Package Inductance
Advantages
z
Easy to Mount
Space Savings
High Power Density
z
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
z
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20V, VDS = 0V
100
2.0
V
Applications
4.0
V
z DC-DC Converters
z Battery Chargers
±100 nA
z Switched-Mode and Resonant-Mode
Power Supplies
IDSS
VDS = VDSS
VGS = 0V
100 μA
TJ = 125°C
2 mA
z DC Choppers
z AC Motor Drives
z Temperature and Lighting Controls
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
8 mΩ
DS98552D(02/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK180N10
IXFX180N10
Symbol
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ. Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
45
76
S
Ciss
Coss
Crss
10.90
3.55
1.94
nF
nF
nF
td(on)
tr
td(off)
tf
50
90
140
65
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
390
55
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
195
RthJC
RthCS
0.22 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
180
720
1.5
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
PLUS 247TM (IXFX) Outline
trr
QRM
IRM
250 ns
IF = 90A, -di/dt = 100A/μs
1.1
13
μC
A
VR = 50V, VGS = 0V
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFK180N10
IXFX180N10
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
180
160
140
120
100
80
350
300
250
200
150
100
50
VGS = 10V
VGS = 10V
9V
9V
8V
8V
7V
6V
7V
6V
60
40
5V
20
5V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 90A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
180
160
140
120
100
80
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
VGS = 10V
9V
8V
7V
6V
I D = 180A
I D = 90A
60
40
5V
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VDS - Volts
-50
-25
0
25
50
75
100
125
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 90A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
180
160
140
120
100
80
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
External Lead Current Limit
VGS = 10V
15V
- - - - -
TJ = 125ºC
60
40
TJ = 25ºC
20
0
0
30
60
90 120 150 180 210 240 270 300 330
ID - Amperes
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_180N10(9X)2-24-09-B
IXFK180N10
IXFX180N10
Fig. 8. Transconductance
Fig. 7. Input Admittance
300
275
250
225
200
175
150
125
100
75
140
130
120
110
100
90
TJ = - 40ºC
TJ = - 40ºC
25ºC
125ºC
25ºC
125ºC
80
70
60
50
40
30
50
20
25
10
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
1.4
40
0
50
100
150
200
250
300
400
10
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 50V
I
I
D = 90A
G = 10mA
TJ = 125ºC
TJ = 25ºC
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
50
100
150
200
250
300
350
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
1.000
0.100
0.010
0.001
100
10
1
= 1 MHz
f
C
iss
C
oss
C
rss
0.0001
0.001
0.01
0.1
1
0
5
10
15
20
25
30
35
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK180N10
IXFX180N10
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 25ºC
Fig. 14. Forward-Bias Safe Operating Area
@ TC = 75ºC
1,000
100
10
1,000
100
10
R
Limit
R
Limit
DS(on)
DS(on)
25µs
25µs
100µs
100µs
1ms
External Lead Limit
1ms
10ms
10ms
100ms
DC
100ms
DC
T
T
= 150ºC
= 75ºC
T
T
= 150ºC
= 25ºC
J
J
C
C
Single Pulse
Single Pulse
1
1
1
10
100
1
10
100
VDS - Volts
VDS - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_180N10(9X)2-24-09-B
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